CN-110797333-B - Power module and method for manufacturing the same

CN110797333BCN 110797333 BCN110797333 BCN 110797333BCN-110797333-B

Abstract

The disclosure relates to a power module and a manufacturing method thereof. The magnetic component comprises a body, a winding, a first surface and a second surface. The winding is arranged on the body, and the first surface is opposite to the second surface. The power device is arranged on the magnetic component and comprises a third surface and a fourth surface. The third surface is opposite to the fourth surface. The conductive component is arranged on the magnetic component and is electrically connected to the magnetic component and the power device. The third surface or the fourth surface of the power device is at least partially attached to the first surface or the second surface of the at least one magnetic component, and the third surface or the fourth surface of the power device is at least partially located within the projection envelope of the first surface or the second surface of the magnetic component, so that the magnetic component supports the power device. Wherein the power device may be a bare power chip.

Inventors

HONG SHOUYU
CHEN QINGDONG
LU KAI
JI PENGKAI
XIN XIAONI
ZHOU MIN
ZHANG YU
ZENG JIANHONG

Assignees

台达电子工业股份有限公司

Dates

Publication Date: 20260508
Application Date: 20180801

Claims (20)

1. A power module, comprising: The magnetic assembly comprises a body, at least one winding, a first surface and a second surface, wherein the winding is at least partially embedded in the body, and the first surface is opposite to the second surface; at least one bare power chip disposed on the at least one magnetic component and comprising a third surface and a fourth surface, wherein the third surface is opposite to the fourth surface, and At least one conductive component arranged on the at least one magnetic component and electrically connected to the at least one magnetic component and the at least one bare power chip, The third surface or the fourth surface of the at least one bare power chip is at least partially attached to the first surface or the second surface of the at least one magnetic component, and the third surface or the fourth surface of the at least one bare power chip is at least partially located within a projection envelope of the first surface or the second surface of the at least one magnetic component, so that the at least one magnetic component supports the at least one bare power chip, wherein the at least one winding comprises two lead-out parts which are vertically arranged, the two lead-out parts are led out from one of the first surface and the second surface, and the at least one bare power chip is correspondingly arranged on the first surface or the second surface led out by the two lead-out parts.
2. The power module of claim 1, further comprising a first insulating material layer disposed on at least one side wall of the magnetic component or the first surface or the second surface of the magnetic component, wherein the third surface or the fourth surface of the at least one bare power chip is located within a projected envelope of the magnetic component and the first insulating material layer, so that the at least one bare power chip is supported by the at least one magnetic component and the first insulating material layer.
3. The power module of claim 2, further comprising at least two magnetic elements, wherein the first surfaces of the at least two magnetic elements or the second surfaces of the at least two magnetic elements are coplanar.
4. The power module of claim 2, further comprising at least one device encapsulated within the first insulating material layer, wherein at least one plane of the at least one device is coplanar with the first surface or the second surface of the magnetic component.
5. The power module of claim 1, further comprising a bonding material layer disposed between the at least one bare power chip and the at least one magnetic component, such that the third surface or the fourth surface of the at least one bare power chip is at least partially attached to the first surface or the second surface of the at least one magnetic component.
6. The power module of claim 1, further comprising a second insulating material layer disposed on the first surface or the second surface of the magnetic component and covering the at least one bare power chip.
7. The power module of claim 6, wherein the at least one conductive element comprises at least one conductive via and at least one first metallization layer disposed on the second insulating material layer, the at least one conductive via connecting the at least one first metallization layer to the third surface or the fourth surface of the bare power chip or the first surface or the second surface of the at least one magnetic element.
8. The power module of claim 7, further comprising a third insulating material layer disposed on the second insulating material layer, wherein the conductive assembly further comprises at least one second conductive metallization layer disposed on the third insulating material layer and electrically connected to each other, wherein the at least one bare power chip and the at least one magnetic assembly are electrically connected through the at least one first conductive metallization layer.
9. The power module of claim 7, wherein the at least one bare power chip comprises at least one electrode disposed on the third surface or the fourth surface and electrically connected to the at least one magnetic component through the at least one conductive component.
10. The power module of claim 7, wherein the at least one magnetic component comprises at least one extraction electrode disposed on the first surface or the second surface and electrically connected to the at least one bare power chip through the at least one conductive component.
11. The power module of claim 4, wherein the at least one magnetic component comprises at least one groove disposed on the first surface or the second surface, and the at least one bare power chip or the at least one device is partially accommodated when the at least one bare power chip or the at least one device is attached to the at least one magnetic component.
12. The power module of claim 1, further comprising at least one device and at least one solder ball, wherein the at least one device is disposed above the magnetic component, is connected to the at least one bare power chip and the at least one magnetic component through the at least one conductive component, and the at least one solder ball is disposed on the at least one conductive component and is located at one side of the at least one device, and the height of the at least one solder ball is greater than or equal to the height of the at least one device.
13. The power module of claim 1, wherein the at least one conductive element comprises at least one solder ball electrically connected to the at least one bare power chip or the at least one magnetic element.
14. The power module of claim 1, wherein the at least one conductive element comprises a wire bond electrically connected between the at least one bare power chip and the at least one magnetic element.
15. The power module of claim 1, wherein the at least one conductive element comprises at least two metallization layers disposed on the first surface side and the second surface side of the at least one magnetic element, respectively, and at least one conductive block disposed through the at least one first insulating material layer and electrically connected between the at least two metallization layers.
16. The power module of claim 15, wherein the bare power chip and the at least one winding are electrically connected through one of the two metallization layers and electrically connected through the conductive block to the other of the two metallization layers.
17. The power module of claim 15, wherein the bare power chip is electrically connected to the at least one winding through the two metallization layers and the conductive block.
18. The power module of claim 1, wherein the at least one bare power chip comprises a flip-chip power semiconductor chip.
19. The power module of claim 1, further comprising a protective layer disposed on the other surface of the at least one magnetic component opposite to the first surface or the second surface of the at least one bare power chip attached to the magnetic component.
20. A method of manufacturing a power module, comprising the steps of: (a) Providing a plurality of magnetic components, wherein the magnetic components comprise a first surface and a second surface, and the first surface is opposite to the second surface, wherein the plurality of magnetic components respectively comprise a winding and a body, the winding comprises two lead-out parts which are vertically arranged, the two lead-out parts are led out of one of the first surface and the second surface, and the winding is at least partially embedded in the body; (b) Forming at least one first insulating material layer around the plurality of magnetic components to form a connecting piece, wherein the first surfaces of the plurality of magnetic components are coplanar or the second surfaces of the plurality of magnetic components are coplanar; (c) Providing a plurality of bare power chips, wherein the bare power chips are respectively and correspondingly arranged on the first surface or the second surface led out by the two leading-out parts on the plurality of magnetic components, the bare power chips comprise a third surface and a fourth surface, the third surface is opposite to the fourth surface, the third surface or the fourth surface of the bare power chips is at least partially attached to the first surface or the second surface of the opposite magnetic components, and the third surface or the fourth surface of the bare power chips is at least partially positioned in the projection envelope of the first surface or the second surface of the opposite magnetic components so that the opposite magnetic components support the bare power chips; (d) Forming at least one second insulating material layer to cover the bare power chips; (e) Forming a plurality of conductive connection components on the at least one second insulating material layer and electrically connected to the plurality of bare power chips and the plurality of magnetic components respectively, and (F) The at least one first insulating material layer and the at least one second insulating material layer are divided to obtain a plurality of power modules.

Description

Power module and method for manufacturing the same Technical Field The present disclosure relates to power modules, and more particularly, to an optimized power module and a method of manufacturing the same. Background Along with the rise of human intelligent life requirements, intelligent product manufacturing requirements, the rise of the Internet of things and the like, the demands of society on information transmission and data processing are also increasing. For a centralized data processing center, a server may be called a key unit, and a motherboard of such a server is generally composed of a Central Processing Unit (CPU), a chipset (Chipsets), a memory, and other data processing digital chips, and power supply and necessary peripheral components. However, with the increase of the processing capacity of the server in unit volume, the number and integration of the digital chips are also increased, which results in the increase of space occupation and power consumption. Thus, the power supply provided by the system for these digital chips (because it is on the same motherboard as the data processing chip, also known as motherboard power supply) is expected to be more efficient, more power density and less bulky to support energy savings and reduced footprint for the entire server and even for the entire data center. Since the power supply requirement of the digital chip is usually low voltage and high current, in order to reduce the loss and impedance influence of the output lead, more power supplies for directly supplying power are arranged on the main board so as to be close to the digital chip as possible. Therefore, such a power source for directly powering the chip, called point power (Point of the Load, POL), is supplied with power from other external power sources. The typical input voltage of the point power supply on the main board of the server is about 12V. On the other hand, for distributed information terminal applications, since constituent components and digital chips and the like must be integrated in a small space and operated continuously for a long time, and power supply thereof is generally provided by an electric power storage device such as a battery of 3V to 5V with a low operating voltage. The power supply supplying it is therefore more stringent with respect to high efficiency and high power density. In recent years, the application of the switching power supply is becoming widespread because the switching power supply can exhibit better efficiency conversion than the linear power supply. However, compared with the linear power supply, the circuit of the switching power supply is more complex, and the magnetic component/capacitor and the like usually have the function of energy storage/filtering, so that the application of chip integration is not easy to realize. Currently, for low-voltage direct current/direct current (DC/DC) conversion, a Buck converter (Buck circuit) is generally used directly to output various voltages between 0V and 5V to corresponding digital chips. As shown in fig. 1, a circuit diagram of a buck converter circuit is disclosed. The buck conversion circuit includes an input filter capacitor Cin, a main switching tube Q1, a freewheel tube Q2, an inductor L, and an output capacitor Co. The input filter capacitor Cin is connected to a power supply to receive the input voltage Vin. One end of the main switching tube Q1 is connected to the input filter capacitor Cin, the other end is connected to the inductor L, and the main switching tube Q1 performs on-off switching operation to adjust the energy transferred from the input to the output and adjust the output voltage and current, wherein the main switching tube Q1 is typically formed by a Metal Oxide Semiconductor (MOS) field effect transistor. One end of the follow current tube Q2 is connected to a node of the main switch tube Q1 and the inductor L, the other end is grounded, the follow current tube Q2 provides a channel for releasing energy from the inductor L, wherein the follow current tube Q2 can be a diode, but in order to reduce loss, the follow current tube Q2 can also be formed by a Metal Oxide Semiconductor (MOS) field effect transistor and is subjected to synchronous rectification control so as to realize the function of a near-ideal diode. One end of an inductor L is connected to the nodes of the main switching tube Q1 and the freewheel tube Q2, the other end of the inductor L is connected to the output capacitor Co, and the inductor L and the output capacitor Co cooperatively filter square wave output voltage formed by the alternate switching operation between the main switching tube Q1 and the freewheel tube Q2 into an average value, namely direct current is output to an output voltage Vout. The output capacitor Co is configured to absorb the current ripple output by the inductor L, so that the voltage ripple of the output voltage Vout is smaller than the required value. The output voltage Vout o