CN-111755408-B - Method for processing TVS diode by utilizing TVS diode frame assembly

CN111755408BCN 111755408 BCN111755408 BCN 111755408BCN-111755408-B

Abstract

TVS diode two-piece frame assembly and method of fabrication. Relates to the technical field of semiconductor devices, in particular to a two-piece type frame of a TVS diode. The upper frame assembly comprises an upper frame upper edge, an upper frame lower edge and an upper frame rib connected with the upper frame upper edge and the lower frame lower edge, wherein a plurality of lower frame ribs are uniformly distributed on two sides of the lower frame ribs, the upper frame assembly comprises an upper frame upper edge, an upper frame lower edge and an upper frame rib connected with the upper frame upper edge and the upper frame lower edge, a plurality of upper frame units are uniformly distributed on two sides of the upper frame rib, and when the upper frame assembly is overlapped on the lower frame assembly, the lower frame units are aligned with the upper frame units one by one. The invention reduces the influence of stress on the TVS diode, improves the stability of the TVS diode in later use, and prolongs the service life of the TVS diode.

Inventors

XUE WEI
LV QIANG
XIAO BAOTONG
JIN MING
XIONG PENGCHENG
WANG YI

Assignees

扬州扬杰电子科技股份有限公司

Dates

Publication Date: 20260512
Application Date: 20200803

Claims (9)

1. The TVS diode frame assembly comprises an upper frame assembly and a lower frame assembly, and is characterized in that the lower frame assembly is of a continuous integral structure and comprises a lower frame upper edge, a lower frame lower edge and a plurality of lower frame ribs connected between the lower frame upper edge and the lower frame lower edge, and a plurality of lower frame units are uniformly distributed on two sides of the lower frame ribs; The upper frame assembly is of a discontinuous split structure and comprises an upper frame upper edge, an upper frame lower edge and an upper frame rib connected with the upper frame upper edge and the upper frame lower edge, wherein a plurality of upper frame units are uniformly distributed on two sides of the upper frame rib; The processing is carried out according to the following steps: 1) Positioning and arranging the lower frame assembly with the continuous integral structure in a welding jig, and arranging TVS diode chips one by one on chip bearing surfaces of a plurality of lower frame units; 2) Positioning and stacking the split upper frame assemblies on the lower frame assemblies one by one, so that the chip connecting surface of the upper frame units covers the top surface of the TVS diode chip; 3) Welding and packaging; 4) And cutting off low vibration conduction, namely cutting the ribs and blanking the frame assembly by adopting a low vibration conduction cutting-off process, and only transmitting vibration force generated by cutting the ribs backwards along the continuous integral lower frame assembly, so that the vibration force is prevented from being transmitted to the split upper frame assembly and the TVS diode chip, and alternating stress is prevented from being generated, and a TVS diode finished product is prepared.
2. The method for manufacturing the TVS diode by using the TVS diode frame assembly according to claim 1, wherein an upper frame assembly positioning hole is formed in an upper edge of the upper frame assembly and a lower edge of the upper frame assembly, a lower frame assembly positioning hole is formed in an upper edge of the lower frame assembly and a lower edge of the lower frame assembly, and the upper frame assembly positioning hole is located opposite to the lower frame assembly positioning hole.
3. The method of manufacturing a TVS diode using a TVS diode frame assembly according to claim 1, wherein one end of an upper side of the upper frame assembly is provided with a chamfer.
4. The method of manufacturing a TVS diode using a TVS diode frame assembly according to claim 1, wherein the other end of the upper side of the lower frame assembly is provided with a chamfer.
5. The method of manufacturing a TVS diode using a TVS diode frame assembly according to claim 1, wherein said upper frame unit is connected to said upper frame rib by an upper lead, and at least one upper indent is formed on a surface of said upper lead.
6. The method of manufacturing a TVS diode using a TVS diode frame assembly of claim 5, wherein said upper lead has at least one upper indentation formed therein.
7. The method of manufacturing a TVS diode using a TVS diode frame assembly according to claim 1, wherein said lower frame unit is connected to said lower frame rib by a lower lead, and at least one depression is formed on a surface of said lower lead.
8. The method of manufacturing a TVS diode using a TVS diode frame assembly according to claim 7, wherein at least one lower indentation is formed in a surface of said lower lead.
9. The method of manufacturing a TVS diode using a TVS diode frame assembly of claim 1, wherein after step 4), the upper and/or lower leads are bent along the upper and/or lower press slots.

Description

Method for processing TVS diode by utilizing TVS diode frame assembly Technical Field The invention relates to the technical field of semiconductor devices, in particular to a two-piece type frame of a TVS diode. Background TVS diodes, also known as transient suppression diodes, are a new type of high-efficiency circuit protection device in widespread use that have extremely fast response times (sub-nanoseconds) and relatively high surge absorption capabilities. When the two ends of the TVS are subjected to instant high-energy impact, the TVS can change the impedance value between the two ends from high impedance to low impedance at an extremely high speed so as to absorb an instant large current, and clamp the voltage between the two ends of the TVS to a preset value, so that the following circuit elements are protected from the impact of the instant high-voltage spike pulse. The TVS diode is particularly important as a protection device in a circuit. At present, in the production process of TVS diodes, the stress generated in the processes of rib cutting and pin bending is generated. During later use, the release of stress can affect the TVS diode stability, resulting in its failure. Disclosure of Invention The present invention has been made in view of the above problems, and provides a TVS diode two-sheet type frame assembly capable of attenuating vibration force and stress generated during production. The TVS diode frame assembly comprises an upper frame assembly and a lower frame assembly, wherein the lower frame assembly comprises an upper edge of a lower frame, a lower edge of the lower frame and a plurality of lower frame ribs connected between the upper edge of the lower frame and the lower edge of the lower frame, a plurality of lower frame units are uniformly distributed on two sides of the lower frame ribs, the upper frame assembly comprises an upper edge of the upper frame, a lower edge of the upper frame and an upper frame rib connected on the upper edge of the upper frame and the lower edge of the upper frame, a plurality of upper frame units are uniformly distributed on two sides of the upper frame rib, and when the upper frame assembly is overlapped on the lower frame assembly, the lower frame units and the upper frame units are aligned one by one. The upper frame and the lower frame of the upper frame assembly are respectively provided with an upper frame assembly positioning hole, the lower frame and the lower frame of the lower frame assembly are respectively provided with a lower frame assembly positioning hole, and the positions of the upper frame assembly positioning holes and the lower frame assembly positioning holes are opposite. One end of the upper edge of the upper frame assembly is provided with a chamfer. The other end of the upper edge of the lower frame assembly is provided with a chamfer. The upper frame unit is connected with the upper frame ribs through upper pins, and at least one upper pressing groove is formed in the surface of each upper pin. At least one upper indentation is formed on the surface of the upper pin. The lower frame unit is connected with the lower frame ribs through lower pins, and at least one lower pressing groove is formed in the surface of each lower pin. At least one lower indentation is formed in the surface of the lower pin. The method for processing the TVS diode by the TVS diode frame assembly comprises the following steps: 1) Positioning and arranging the lower frame assembly in a welding jig, and placing TVS diode chips one by one on chip bearing surfaces of a plurality of lower frame units; 2) Positioning and stacking the upper frame components one by one on the lower frame components, so that the chip connecting surface of the upper frame unit covers the top surface of the TVS diode chip; 3) Welding and packaging; 4) And cutting off low vibration conduction. After step 4), bending the upper pins and/or the lower pins along the upper pressing grooves and/or the lower pressing grooves. The invention has the beneficial effects that the upper frame components are disconnected and discontinuous on the lower frame components. In the process of cutting the ribs and blanking, vibration generated by the cutting of the ribs can be transmitted backwards only along the lower frame assembly, so that the integral vibration strength of the upper frame assembly and the lower frame assembly is weakened, and alternating stress of the upper frame assembly and the lower frame assembly on the TVS diode is avoided. In addition to the structural change of the upper frame assembly, at least one pressing groove is formed on the surfaces of the upper pin and the lower pin, so that bending stress generated in the pin bending process is reduced. By the method, the influence of stress on the TVS diode is reduced, the stability of the TVS diode in later use is improved, and the service life of the TVS diode is prolonged. Drawings Figure 1 is a schematic view of the st