CN-112309851-B - Substrate processing method, substrate processing apparatus, and cleaning apparatus

Abstract

A substrate processing method includes a step of preparing a substrate including an etching target film and a mask, a step of etching the etching target film through the mask with plasma, and a step of heat-treating the substrate at a predetermined temperature after the step of etching. According to the present invention, the film to be etched can be prevented from being damaged by the reaction product deposited on the film to be etched.

Inventors

• Omi muneyuki
• Hou Pingtuo
• MURAKAMI YOSHIHIRO

Assignees

• 东京毅力科创株式会社

Dates

Publication Date

20260512

Application Date

20200723

Priority Date

20190802

Claims (5)

1. 1. A method of processing a substrate, comprising: a step of preparing a substrate including a mask and a laminated film formed by alternately laminating a plurality of silicon oxide films and a plurality of silicon nitride films; Etching the laminated film through the mask with plasma to form a recess in the laminated film and to form a reaction product containing ammonium silicon fluoride or ammonium halide on a sidewall of the recess; A step of ashing the inclined deposit attached to the inclined portion of the substrate after the step of etching, and A step of removing the reaction product from the side wall of the recess by heat-treating the substrate at a predetermined temperature after the etching step, The ashing of the inclined deposit and the heat treatment of the substrate are performed simultaneously, and a treatment chamber of the heat treatment of the substrate is different from a treatment chamber of the etching, In the step of ashing the inclined deposit and the step of removing the reaction product, the temperature of a stage on which the substrate is placed is set to 120 ℃ or higher and less than 250 ℃.
2. 2. The substrate processing method according to claim 1, wherein: the ammonium halide includes at least one of ammonium fluoride, ammonium chloride, ammonium bromide, ammonium iodide.
3. 3. A substrate processing method according to claim 1 or 2, wherein: the step of forming the reaction product and the step of removing the reaction product are performed in such a manner that the substrate is not exposed to the atmosphere.
4. 4. A substrate processing apparatus having a processing container, a stage on which a substrate can be placed, and a control unit, the substrate processing apparatus characterized in that: the control section controls to execute the steps of: a step of preparing a substrate including a mask and a laminated film formed by alternately laminating a plurality of silicon oxide films and a plurality of silicon nitride films, and placing the substrate on the placement stage; Etching the laminated film through the mask with plasma to form a recess in the laminated film and to form a reaction product containing ammonium silicon fluoride or ammonium halide on a sidewall of the recess; A step of ashing the inclined deposit attached to the inclined portion of the substrate after the step of etching, and A step of removing the reaction product from the side wall of the recess by heat-treating the substrate at a predetermined temperature after the etching step, The control section controls so that the ashing of the inclined deposit and the heat treatment of the substrate are performed simultaneously, and in the step of ashing the inclined deposit and the step of removing the reaction product, the temperature of a stage on which the substrate is placed is set to 120 ℃ or more and less than 250 ℃.
5. 5. A cleaning apparatus having a processing container, a stage on which a substrate can be placed, and a control unit, the cleaning apparatus characterized in that: the control section controls to execute the steps of: a step of preparing a substrate including a mask and a laminated film formed by alternately laminating a plurality of silicon oxide films and a plurality of silicon nitride films, and placing the substrate on the placement stage; Etching the laminated film through the mask with plasma to form a recess in the laminated film and to form a reaction product containing ammonium silicon fluoride or ammonium halide on a sidewall of the recess; A step of ashing the inclined deposit attached to the inclined portion of the substrate after the step of etching, and After the etching step, heat-treating the substrate to remove the reaction product from the side walls of the recess, The control section controls so that the ashing of the inclined deposit and the heat treatment of the substrate are performed simultaneously, and in the step of ashing the inclined deposit and the step of removing the reaction product, the temperature of a stage on which the substrate is placed is set to 120 ℃ or more and less than 250 ℃.

Description

Substrate processing method, substrate processing apparatus, and cleaning apparatus Technical Field The invention relates to a substrate processing method, a substrate processing apparatus and a cleaning apparatus. Background A method of etching a hole having a high aspect ratio in a low-temperature environment in a semiconductor wafer formed by stacking a silicon oxide film and a silicon nitride film is known (for example, refer to patent document 1). When etching an etching target film containing silicon nitride using a hydrogen-containing gas, a reaction product is generated, which is deposited on the surface and/or side walls of the etching target film after the etching process. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2016-207840. Disclosure of Invention Technical problem to be solved by the invention The purpose of the present invention is to prevent damage to an etching target film due to reaction products deposited on the etching target film. Means for solving the problems According to one aspect of the present invention, there is provided a substrate processing method including a step of preparing a substrate including an etching target film and a mask, a step of etching the etching target film through the mask with plasma, and a step of heat-treating the substrate at a predetermined temperature after the step of etching. Effects of the invention According to one side, the film to be etched can be prevented from being damaged by the reaction product deposited on the film to be etched. Drawings Fig. 1 is a diagram showing an example of a substrate processing system according to an embodiment. Fig. 2 is a diagram showing an example of the etching target film exposed to the atmosphere after the etching step. Fig. 3 is a diagram showing an example of a substrate processing apparatus according to an embodiment. Fig. 4 is a graph showing the analysis results of the reaction product generated in the etching step. Fig. 5 is a flowchart showing an example of a substrate processing method according to an embodiment. Fig. 6 is a diagram showing an example of the temperature at the time of modifying or deforming each material. Fig. 7 is a diagram showing an example of the film to be etched after the heat treatment step according to the embodiment. Fig. 8 is a diagram showing an example of a reaction product deposited on the inclined portion of the substrate according to the embodiment. Fig. 9 is a diagram showing an example of a cleaning device according to an embodiment. Description of the reference numerals 1A substrate processing apparatus, 2, A cleaning device is arranged on the upper surface of the cleaning device, 10A substrate processing system, 11 To 14 parts of a processing chamber, 20 The vacuum conveying chamber is provided with a vacuum conveying chamber, 21 A conveying mechanism, wherein the conveying mechanism comprises a conveying mechanism, 31. A load lock chamber 32, the load lock chamber, 40 The air conveying chamber is arranged in the air conveying chamber, 41 A conveying mechanism, wherein the conveying mechanism is provided with a plurality of conveying rollers, 51-53 Of a loading port, 61-68 Parts of a gate valve, 70A control part, wherein the control part, 102A processing vessel, 110 A silicon nitride film, 120 A silicon oxide film, 121 A mounting table (lower electrode), 122-An upper electrode, 170 The control part is provided with a control part, 300 The number of the processing containers is equal to the number of the processing containers, 301 A carrying table, 302 An upper electrode, 310 An upper gas supply part, 320 A lower gas supply portion, 330 A gas supply. Detailed Description The mode for carrying out the present invention will be described below with reference to the accompanying drawings. In the drawings, the same components are denoted by the same reference numerals, and overlapping description may be omitted. [ Substrate processing System ] First, an example of a substrate processing system 10 according to an embodiment will be described with reference to fig. 1. Fig. 1 is a diagram showing an example of a substrate processing system 10 according to an embodiment. In the substrate processing system 10, an embodiment of a substrate processing method including an etching step and a heat treatment step is performed. The substrate processing system 10 includes process chambers 11 to 14, a vacuum transfer chamber 20, load lock chambers 31, 32, an atmospheric transfer chamber 40, load ports 51 to 53, gate valves 61 to 68, and a control device 70. The processing chamber 11 has a mounting table 11a on which a substrate W can be mounted, and is connected to the vacuum transfer chamber 20 via a gate valve 61. Similarly, the processing chamber 12 has a mounting table 12a on which a substrate can be mounted, and is connected to the vacuum transfer chamber 20 via a gate valve 62. The processing chamber 13 has a mounting table 1