CN-112309902-B - Substrate processing apparatus and method

CN112309902BCN 112309902 BCN112309902 BCN 112309902BCN-112309902-B

Abstract

A substrate processing method and apparatus for creating a sacrificial masking layer is disclosed. The layer is produced by providing a first precursor in the reaction chamber selected to react with one of the radiation modified and unmodified layer portions on the substrate but not the other of the radiation modified and unmodified layer portions to selectively grow the sacrificial masking layer.

Inventors

1. Raj marks
D. Piumi
1. Zurkov
D - Drost
M. Givens

Assignees

ASM IP私人控股有限公司

Dates

Publication Date: 20260505
Application Date: 20200721
Priority Date: 20190730

Claims (20)

1. A substrate processing apparatus to produce a sacrificial masking layer on a substrate, the apparatus comprising: A lithographic input/output port to transfer a substrate between the substrate processing apparatus and a lithographic projection apparatus; A modifiable layer deposition apparatus to deposit a radiation modifiable layer on a substrate, the radiation modifiable layer being a self-assembled monolayer (SAM); A selective deposition apparatus to provide a first precursor in the reaction chamber selected to react with one of the radiation modified and unmodified layer portions but not the other of the radiation modified and unmodified layer portions to produce the masking layer; a substrate handler to transfer a substrate between the lithographic input/output port and the selective deposition apparatus, and, A control system operatively connected to the substrate handler and the selective deposition apparatus and provided with a memory provided with a program that when executed on the control system: controlling the substrate handler to pick up and move the substrate to the selective deposition apparatus via the lithographic input/output port, and The selective deposition apparatus is controlled to provide the first precursor in the reaction chamber selected to react with one of the radiation modified and unmodified layer portions but not the other of the radiation modified and unmodified layer portions to deposit the sacrificial masking layer comprising an element selected from the group consisting of metal, silicon (Si), and germanium (Ge) on the one of the radiation modified and unmodified layer portions.
2. The substrate processing apparatus of claim 1, wherein the memory is provided with a program that, when executed on the control system, enables a precursor distribution and removal system to remove a portion of the first precursor from the reaction chamber after the first precursor is provided to the reaction chamber.
3. The substrate processing apparatus of claim 2, wherein the precursor distribution and removal system comprises one or more reaction chamber valves to provide a gaseous second precursor to the reaction chamber and remove a gaseous second precursor from the reaction chamber, and the selective deposition process stored in the memory further comprises enabling the precursor distribution and removal system to provide the second precursor in the reaction chamber to react with one of the modified and unmodified layer portions and not the other of the modified and unmodified layer portions in the reaction chamber to produce the sacrificial masking layer.
4. The substrate processing apparatus of claim 3, wherein the selective deposition process stored in the memory further comprises enabling the precursor distribution and removal system to remove a portion of the second precursor from the reaction chamber.
5. The substrate processing apparatus of claim 1, wherein the precursor distribution and removal system of the selective deposition device is constructed and arranged to provide a metal halide in the reaction chamber.
6. The substrate processing apparatus of claim 1, wherein the precursor distribution and removal system of the selective deposition device is constructed and arranged to provide a precursor comprising a metal or semiconductor selected from the group consisting of aluminum (Al), hafnium (Hf), gallium (Ga), germanium (Ge), zirconium (Zr), indium (In), lithium (Li), tellurium (Te), antimony (Sb), titanium (Ti), tantalum (Ta), tungsten (W), and tin (Sn) In the reaction chamber.
7. The substrate processing apparatus of claim 1, wherein the precursor distribution and removal system of the selective deposition device is constructed and arranged to provide an oxidant-containing precursor in the reaction chamber.
8. The substrate processing apparatus of claim 1, wherein the precursor distribution and removal system of the selective deposition device is constructed and arranged to provide a precursor comprising silicon in the reaction chamber.
9. The substrate processing apparatus of claim 1, wherein the selective deposition device is constructed and arranged to control the temperature of the reaction chamber to a value between 20 and 450 ℃.
10. The substrate processing apparatus of claim 1, wherein the selective deposition device is constructed and arranged to control the pressure in the reaction chamber to a value between 0.001 and 1000 torr.
11. The substrate processing apparatus of claim 10, wherein the selective deposition device is constructed and arranged to control the pressure in the reaction chamber to a value between 0.1 and 500 torr.
12. The substrate processing apparatus of claim 11, wherein the selective deposition device is constructed and arranged to control the pressure in the reaction chamber to a value between 1 and 100 torr.
13. The substrate processing apparatus of claim 1, wherein the radiation modifiable layer deposition device comprises a rotatable substrate table to rotate the substrate and a liquid dispenser to provide liquid to a surface of the substrate.
14. The substrate processing apparatus of claim 1, wherein the apparatus comprises: a fab input/output port for transferring substrates between the substrate processing apparatus and a semiconductor fab, and A control system operatively connected to the substrate handler, the radiation modifiable layer deposition apparatus, and the selective deposition apparatus and provided with a memory provided with a program which when executed on the control system: Controlling the substrate handler to pick up a substrate from the fab input/output port and move it to the modifiable layer deposition apparatus; Controlling the modifiable layer depositing apparatus to deposit a radiation modifiable layer on the substrate and, Controlling the substrate handler to pick up the substrate from the modifiable layer deposition apparatus and move it to a lithographic projection apparatus via the lithographic input/output port, and after locally modifying the radiation modifiable layer on the substrate with exposing radiation of the lithographic projection apparatus: Controlling the substrate handler to pick up the substrate via the lithographic input/output port and move it to the selective deposition apparatus; controlling the selective deposition apparatus to provide the first precursor in the reaction chamber selected to react with one of the radiation modified and unmodified layer portions but not the other of the radiation modified and unmodified layer portions to produce the sacrificial masking layer, and, The substrate handler is controlled to pick up the substrate from the selective deposition apparatus and move it to the fab input/output port.
15. A substrate processing method to produce a sacrificial masking layer, the method comprising: depositing a radiation modifiable layer on a substrate, the radiation modifiable layer being a self-assembled monolayer (SAM); Providing the substrate with a radiation modifiable layer to a lithographic projection apparatus to locally modify the radiation modifiable layer; locally modifying the radiation modifiable layer of the substrate with exposing radiation of the lithographic projection apparatus to modify the radiation modifiable layer where exposed to radiation; moving the substrate from the lithographic projection apparatus to a reaction chamber of a selective deposition apparatus, and, A first precursor selected to react with one of the modified and unmodified layer portions but not the other of the modified and unmodified layer portions is provided in the reaction chamber to deposit the sacrificial masking layer comprising an element selected from the group consisting of metal, silicon (Si), and germanium (Ge) on the one of the radiation modified and unmodified layer portions.
16. The substrate processing method of claim 15, wherein the radiation modifiable layer has a thickness between 0.1 and 20 nm.
17. The substrate processing method of claim 16, wherein the radiation modifiable layer has a thickness between 1 and 20 nm.
18. The substrate processing method of claim 15, wherein a precursor distribution and removal system removes unreacted portions of the first precursor and/or reaction byproducts from the reaction chamber after providing the first precursor selected to react with one of the modified and unmodified layer portions.
19. The substrate processing method of claim 18, wherein the precursor distribution and removal system provides a second precursor to the reaction chamber after removing a portion of the first precursor from the reaction chamber.
20. The substrate processing method of claim 19, wherein the precursor distribution and removal system removes unreacted portions of the second precursor and/or reaction byproducts from the reaction chamber after providing the second precursor.

Description

Substrate processing apparatus and method Technical Field The present disclosure relates generally to a substrate processing apparatus and method of producing a sacrificial masking layer. A substrate processing apparatus to create a sacrificial masking layer on a substrate may include a lithographic input/output port to transfer the substrate between the substrate processing apparatus and a lithographic projection apparatus. The substrate processing method to create the sacrificial masking layer may include: Providing a lithographic projection apparatus with a substrate having a radiation modifiable layer for patterning, and The radiation modifiable layer of the substrate is patterned with the radiation modifiable layer where the radiation is exposed modified by the exposure radiation of the lithographic projection apparatus. Background Different process steps may be performed on the substrate using a substrate processing apparatus (e.g., track or coater) before and/or after patterning the resist layer on the substrate. For example, if contaminants are present on the substrate, they may be removed by chemical treatment. The substrate may be heated to a temperature sufficient to drive off any moisture that may be present on the substrate. An adhesion promoter may be applied to promote adhesion of the resist to the substrate. In a resist deposition apparatus of a substrate processing apparatus, a substrate may be covered with a resist layer, for example, by spin-coating the resist. A viscous liquid solution of resist may be dispensed onto the substrate and the substrate may be rotated to produce a uniform thin layer. The resist coated wafer may then be baked to evaporate the resist solvent. The substrate with the resist layer may be transferred from the substrate processing apparatus to a lithographic projection apparatus. In a lithographic projection apparatus, a substrate having a resist layer may be exposed to a patterned beam of radiation of (euv) radiation. Exposure to radiation causes chemical changes in the resist layer, thereby patterning the layer. For EUV lithography, the resist layer may be very thin. Such a thin layer may not be very etch resistant. Disclosure of Invention This summary is provided to introduce a selection of concepts in a simplified form. These concepts are described in more detail below in the detailed description of example embodiments of the disclosure. This summary is not intended to identify key features or essential features of the claimed subject matter, nor is it intended to be used to limit the scope of the claimed subject matter. In some embodiments, a substrate processing apparatus to create a sacrificial masking layer on a substrate may be provided. The substrate processing apparatus may include a lithographic input/output port to transfer a substrate between the substrate processing apparatus and a lithographic projection apparatus. The substrate processing apparatus may be provided with a selective deposition device to provide a first precursor in the reaction chamber selected to react with one of the radiation modified and unmodified layer portions but not the other of the radiation modified and unmodified layer portions to produce the sacrificial masking layer. The apparatus may include a substrate handler to transfer substrates between the lithographic input/output port and the selective deposition apparatus. The apparatus may include a control system operatively connected to the substrate handler and the selective deposition device. The control system may be provided with a memory provided with a program that when executed on the control system controls the substrate handler to pick up a substrate from the lithographic input/output port and move it to the selective deposition apparatus, and controls the selective deposition apparatus to provide a first precursor in the reaction chamber selected to react with one of the radiation-modified and unmodified layer portions but not the other of the radiation-modified and unmodified layer portions to produce the sacrificial masking layer. In some embodiments, a substrate processing method to create a sacrificial masking layer is disclosed. The substrate processing method may include providing a lithographic projection apparatus with a substrate having a radiation modifiable layer for patterning. The substrate processing method may further include patterning the radiation modifiable layer of the substrate with the radiation modifiable layer of the lithographic projection apparatus where the radiation is exposed to the radiation. The substrate may be moved from the lithographic projection apparatus to a reaction chamber of a selective deposition apparatus. A first precursor selected to react with one of the modified and unmodified layer portions and not the other of the modified and unmodified layer portions may be provided in the reaction chamber to create the sacrificial masking layer. For purposes of summarizing the inv