CN-112310259-B - Light emitting diode element and manufacturing method thereof

Abstract

The invention discloses a light-emitting diode element and a manufacturing method thereof, wherein the light-emitting diode element comprises a semiconductor lamination, a first current blocking block and a second current blocking block which are formed on the semiconductor lamination and are separated from each other, and a plurality of electrodes which are formed on the semiconductor lamination and are electrically connected with the semiconductor lamination, wherein one of the electrodes is positioned on the first current blocking block, and the second current blocking block is not overlapped with the electrodes.

Inventors

• WANG XINYING
• YE ZONGXUN
• LIN YULING
• HU BAIJUN

Assignees

• 晶元光电股份有限公司

Dates

Publication Date

20260508

Application Date

20200731

Priority Date

20190731

Claims (20)

1. 1. A light emitting diode device, comprising: A substrate comprising a first edge, a second edge opposite the first edge; a semiconductor lamination layer formed on the substrate, wherein the semiconductor lamination layer comprises a plurality of light emitting diode units, and the light emitting diode units comprise a first light emitting diode unit and a second light emitting diode unit; the groove is formed between the first light-emitting diode unit and the second light-emitting diode unit, wherein the groove exposes the substrate; a first current blocking pattern block and a second current blocking pattern block formed on the trench, the first current blocking pattern block and the second current blocking pattern block being separated from each other in a top view of the light emitting diode device; The connecting electrode is formed on the first light-emitting diode unit and the second light-emitting diode unit and is electrically connected with the first light-emitting diode unit and the second light-emitting diode unit; A first electrode on the first LED unit; a second electrode on the second LED unit; a first bonding pad connected with the first electrode, and A second bonding pad connected with the second electrode; wherein, on the upper view of the LED element, the first current blocking block overlaps the connection electrode.
2. 2. The light emitting diode element of claim 1, wherein: in the upper view of the led device, the area of the first current blocking pattern is larger than the area of the second current blocking pattern.
3. 3. The light emitting diode element of claim 2, wherein: The first light-emitting diode unit and the second light-emitting diode unit respectively comprise a first semiconductor layer, a second semiconductor layer and a light-emitting layer, wherein the first semiconductor layer is formed on the substrate, the second semiconductor layer is formed on the first semiconductor layer, and the light-emitting layer is arranged between the first semiconductor layer and the second semiconductor layer; The connection electrode is electrically connected with the first semiconductor layer of the first light emitting diode unit and the second semiconductor layer of the second light emitting diode unit.
4. 4. The light emitting diode device of claim 3, wherein the connection electrode comprises a first extension portion and a second extension portion, the first extension portion is electrically connected to the first semiconductor layer of the first light emitting diode unit, the second extension portion is electrically connected to the second semiconductor layer of the second light emitting diode unit, and the connection electrode is connected to the first extension portion and the second extension portion.
5. 5. The light emitting diode device of claim 4, further comprising a transparent conductive layer formed between the first current blocking pattern and the second extension.
6. 6. The light emitting diode component of claim 4, wherein: The first current blocking block is formed between the first semiconductor layer and the first extension portion of the first light emitting diode unit.
7. 7. The light emitting diode element of claim 1, wherein: The substrate includes an upper surface including a peripheral region; On the top view of the light emitting diode element, the peripheral region surrounds the semiconductor stack; the first current blocking pattern and the second current blocking pattern are formed on the peripheral region.
8. 8. The light emitting diode element of claim 1, wherein: The substrate comprises a first edge and a second edge opposite to the first edge, wherein each of the first edge and the second edge comprises a side wall; the first current blocking block and the second current blocking block each comprise a side wall; On the cross-section of the LED device, the side wall of the first edge is connected with the side wall of the first current blocking block, and the side wall of the second edge is connected with the side wall of the second current blocking block.
9. 9. The light emitting diode element of claim 1, further comprising: The insulation structure is formed on the first light-emitting diode unit, the second light-emitting diode unit, the connecting electrode and the groove.
10. 10. The light emitting diode element of claim 1, wherein: the substrate comprises a first edge and a second edge opposite to the first edge; The first current blocking pattern is adjacent to the first edge, and the second current blocking pattern is adjacent to the second edge.
11. 11. The led device of claim 1, wherein the first current blocking pattern is aligned with the first edge and the second current blocking pattern is aligned with the second edge in the top view of the led device.
12. 12. The light emitting diode element according to claim 1 or 11, wherein: The substrate further comprises a third edge connecting the first edge and the second edge, wherein the length of the first edge is greater than the length of the third edge.
13. 13. The light emitting diode device of claim 1, wherein the first current blocking pattern is not aligned with the second edge, and the second current blocking pattern is not aligned with the first edge.
14. 14. The light emitting diode device of claim 1, wherein the first current blocking pattern is not adjacent to the second edge, and the second current blocking pattern is not adjacent to the first edge.
15. 15. A light emitting diode device, comprising: a substrate comprising an upper surface, a first edge, and a second edge opposite the first edge; The semiconductor lamination is positioned on the substrate, wherein the semiconductor lamination comprises a first semiconductor layer and a platform region, the first semiconductor layer is formed on the substrate, the platform region is formed on a first part of the first semiconductor layer, the platform region comprises a second semiconductor layer and a light-emitting layer, the second semiconductor layer is formed on the first semiconductor layer, the light-emitting layer is formed between the first semiconductor layer and the second semiconductor layer, and the first semiconductor layer comprises a second part exposed by the platform region; A first current blocking pattern formed on the second portion of the first semiconductor layer and located at the first edge, and A first electrode formed on the first current blocking pattern block; Wherein, on a top view of the light emitting diode device, the upper surface includes a peripheral region surrounding the semiconductor stack, the mesa region includes an edge, the first current blocking pattern includes an edge facing the edge of the mesa region, the first current blocking pattern partially covers the second portion of the first semiconductor layer and the peripheral region, and the edge of the mesa region is spaced apart from the edge of the first current blocking pattern.
16. 16. The light emitting diode component of claim 15, wherein: the first edge comprises a side wall, and the first current blocking block comprises a side wall; The side wall of the first edge is connected with the side wall of the first current blocking block in the cross section of the light emitting diode element.
17. 17. The light emitting diode component of claim 15, further comprising: A second current blocking pattern formed on the second portion of the first semiconductor layer and located at the second edge, and A second electrode formed on the second current blocking pattern block; wherein, on the upper view of the light emitting diode device, the second current blocking block part covers the peripheral region and the second part of the first semiconductor layer.
18. 18. The light emitting diode component of claim 17, wherein: The substrate further comprises a third edge, wherein the third edge is connected with the first edge and the second edge, and the length of the first edge is longer than that of the third edge; The first current blocking pattern is aligned with the first edge and the second current blocking pattern is aligned with the second edge.
19. 19. The light emitting device of claim 15, wherein the first semiconductor layer comprises a sidewall, and the first current blocking pattern covers the sidewall of the first semiconductor layer.
20. 20. The light emitting diode component of claim 17, further comprising: a third current blocking block formed on the second portion of the first semiconductor layer and located at the first edge; The first electrode is formed on the third current blocking block, and the third current blocking block partially covers the second portion of the first semiconductor layer and the surrounding area.

Description

Light emitting diode element and manufacturing method thereof Technical Field The present invention relates to a light emitting diode device and a method for manufacturing the same, and more particularly, to a light emitting diode device with a current blocking pattern and a method for manufacturing the same. Background The Light-Emitting Diode (LED) has the good characteristics of low energy consumption, low heat generation, long operation life, shock resistance, small volume, high reaction speed and the like, and is therefore suitable for various illumination and display applications. In a conventional LED, a compound semiconductor material is used, and light is generated by using photons (phonon) generated by combining holes in a P-type semiconductor and electrons in an N-type semiconductor. In the conventional LED, current congestion is likely to occur near the electrode (current crowding). Therefore, some LEDs use a transparent conductive layer and a current blocking layer (current blocking layer) to make the current distribution more uniform and to improve the luminous efficiency. Disclosure of Invention The invention discloses a light-emitting diode element which comprises a semiconductor laminated layer, a first current blocking block and a second current blocking block, a plurality of electrodes and a plurality of light-emitting diodes, wherein the first current blocking block and the second current blocking block are formed on the semiconductor laminated layer and are separated from each other, the plurality of electrodes are formed on the semiconductor laminated layer and are electrically connected with the semiconductor laminated layer, one of the plurality of electrodes is positioned on the first current blocking block, and the second current blocking block is not overlapped with the plurality of electrodes. The invention discloses a light-emitting diode element, which comprises a substrate, a semiconductor layer stack, a first current blocking block, a second current blocking block and an electrode, wherein the substrate comprises a first edge and a second edge opposite to the first edge, the semiconductor layer stack is arranged on the substrate, the first current blocking block and the second current blocking block are formed on the semiconductor layer stack and are separated from each other, the electrode is formed on the semiconductor layer stack and the first current blocking block, and the first current blocking block is aligned with the first edge and the second current blocking block is aligned with the second edge. The invention discloses a light-emitting diode element, which comprises a substrate, a semiconductor lamination, a current blocking block and an electrode, wherein the substrate comprises an upper surface, a first edge and a second edge opposite to the first edge, the semiconductor lamination is arranged on the substrate, the current blocking block is formed on the semiconductor lamination and is arranged on the first edge, the electrode is formed on the current blocking block, the upper surface comprises a surrounding area which is not covered by the semiconductor lamination, and the current blocking block covers one side wall and the surrounding area of the semiconductor lamination. Drawings Fig. 1 is a top view of an LED element 1 according to an embodiment of the present invention; fig. 2 is a schematic cross-sectional view of the LED element 1; fig. 3A to 3H are schematic cross-sectional views of the LED element 1 at various stages of the manufacturing process; fig. 4A to 4H are top views of the LED element 1 at various stages of the manufacturing process; Fig. 5 is a schematic view of an LED element 2 according to another embodiment of the present invention; fig. 6 is a top view of the LED element 2 in a wafer WF2, without performing the dicing process; fig. 7 is a top view of an LED device 3 according to another embodiment of the present invention, in which a dicing process has not been performed in a wafer WF 3; FIG. 8A is a schematic cross-sectional view taken along line X-X in FIG. 7; FIG. 8B is a schematic cross-sectional view taken along line X-X in FIG. 7 according to another embodiment of the present invention. Symbol description 1.2, 3 LED element 10. 10 A-10 h LED unit 102. Substrate 104. First semiconductor layer 106. Light-emitting layer 108. Second semiconductor layer 112. Transparent conductive layer 20. 20' First electrode 201. 201' First pad 202. 202' First extension 30. 30' Second electrode 301. 301' Second pad 302. 302' Second extension 36A first bonding pad 36B second bonding pad 50. Insulation structure 501. 502 Opening 60. Connection electrode 182. Upper surface of CB1, CB2, CB3, CB4, CB5, CB6, CB7, CB8, CB9, CB10, CB11, CB12, CBB1, CBB2, CBB3, CBB4 current blocking tile CE1, CE2, CE3, CE4, CE5, CE6, CE7, CE8 edges CL prearranged cut line MS1, MS2, MS3, MS4, MS5, MS8, MS9 plateau SCRB cutting lines TRCH groove WF1, WF2 and WF3 wafers Detailed Desc