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CN-112768518-B - Semiconductor die, semiconductor device, and insulated gate bipolar transistor module

CN112768518BCN 112768518 BCN112768518 BCN 112768518BCN-112768518-B

Abstract

Semiconductor die, semiconductor device, and insulated gate bipolar transistor module are disclosed. A semiconductor die (510) includes a semiconductor body (100). The semiconductor body (100) comprises a first active portion (191) and a second active portion (192). The first active portion (191) includes a first source region (111). The second active portion (192) includes a second source region (112). The gate structure (150) extends from the first surface (101) into the semiconductor body (100). The gate structure (150) has a longitudinal gate extension (lg) along a transverse first direction (291). The first load pad (311) and the first source region (111) are electrically connected. The second load pad (312) and the second source region (112) are electrically connected. The gap (230) separates the first load pad (311) and the second load pad (312) in a lateral direction. The longitudinal extension of the gap (230) in the transverse direction is parallel to the first direction (291) or is offset from the first direction (291) by no more than 60 degrees. The connection structure (390) electrically connects the first load pad (311) and the second load pad (312). The connection structure (390) is formed in a recess extending from the first surface (101) into the semiconductor body (100) and/or in a wiring layer formed on the first surface (101).

Inventors

  • V. Van Trick
  • R. Babusk
  • C. Yege
  • C. R. Muller
  • F-J. ned Ted North
  • F.D. Puffersch
  • A. Philippo
  • J. Specht

Assignees

  • 英飞凌科技股份有限公司

Dates

Publication Date
20260505
Application Date
20201021
Priority Date
20191021

Claims (20)

  1. 1. A semiconductor die, comprising: A semiconductor body (100) comprising a first active portion (191) and a second active portion (192), the first active portion (191) comprising a first source region (111), the second active portion (192) comprising a second source region (112); A gate structure (150) extending from the first surface (101) into the semiconductor body (100), wherein the gate structure (150) has a gate extension along a first lateral direction (291); A first load pad (311), wherein the first load pad (311) and the first source region (111) are electrically connected; a second load pad (312), wherein the second load pad (312) and the second source region (112) are electrically connected, wherein a gap (230) laterally separates the first load pad (311) and the second load pad (312), wherein the gap (230) has an extension parallel to the first lateral direction (291) or has an extension deviating from the first lateral direction (291) by no more than 60 degrees, and A connection structure (390) electrically connecting the first load pad (311) and the second load pad (312), wherein the connection structure (390) is formed in a recess extending from the first surface (101) into the semiconductor body (100) and/or in a wiring layer formed on the first surface (101).
  2. 2. The semiconductor die of claim 1, wherein the connection structure (390) comprises a trench connection structure (391) extending into the semiconductor body (100), the trench connection structure (391) comprising a conductive portion (395) and an insulating portion (399), the insulating portion (399) separating the conductive portion (395) from the semiconductor body (100).
  3. 3. The semiconductor die of claim 2, wherein a longitudinal extension of the trench connection structure (391) runs parallel to a longitudinal extension of the gap (230).
  4. 4. The semiconductor die of claim 2, wherein a longitudinal extension of the trench connection structure (391) is inclined with respect to a longitudinal extension of the gap (230).
  5. 5. The semiconductor die of any of claims 2 to 4, wherein the connection structure (390) comprises a plurality of trench connection structures (391).
  6. 6. The semiconductor die of any of claims 2 to 4, further comprising: A trench electrode (165) extending into the semiconductor body (100), wherein the conductive portion (395) of the trench connection structure (391) is in contact with the trench electrode (165).
  7. 7. The semiconductor die of any of claims 1 to 4, wherein the gap (230) has a gap width (wg) orthogonal to the first lateral direction (291), and wherein the gap width (wg) is at least 2 μιη.
  8. 8. The semiconductor die of claim 7, wherein the connection structure (390) has a maximum extension (lc) along a second lateral direction (292) orthogonal to the first lateral direction (291), and the maximum extension (lc) is at most ten times the gap width (wg).
  9. 9. The semiconductor die of any of claims 1 to 4, wherein the connection structure (390) comprises a connection line (392) formed on the semiconductor body (100), wherein the connection line (392) is formed outside the gap (230).
  10. 10. The semiconductor die of any of claims 1 to 4, further comprising: a first trench electrode (165) formed in the first active portion (191) and extending into the semiconductor body (100), wherein the first trench electrode (165) and the first load pad (311) are in direct contact; a second trench electrode (165) formed in the second active portion (192) and extending into the semiconductor body (100), wherein the second trench electrode (165) and the second load pad (312) are in direct contact; A source connection line (397) formed on the semiconductor body (100), wherein the source connection line (397) is in direct contact with the first trench electrode (165), wherein the source connection line (397) is in direct contact with the second trench electrode (165), and wherein the connection structure (390) comprises a portion of the source connection line (397) extending from the first trench electrode (165) to the second trench electrode (165).
  11. 11. The semiconductor die of any one of claims 1 to 4, Wherein the semiconductor body (100) further comprises: A drift region (130), A first body region (121) forming a first pn-junction with the drift region (130) and a second pn-junction with the first source region (111), A second body region (122) forming a further first pn-junction with the drift region (130) and a further second pn-junction with the second source region (112), and And a collector region (140), the collector region (140) and the drift region (130) forming a third pn junction, wherein the drift region (130) separates the collector region (140) from the body region (120).
  12. 12. A semiconductor device, comprising: the semiconductor die (510) of any of claims 1 to 11.
  13. 13. A semiconductor device, comprising: A semiconductor body (100) comprising a first active portion (191) and a second active portion (192), the first active portion (191) comprising a first source region (111), the second active portion (192) comprising a second source region (112); A first load pad (311), wherein the first load pad (311) and the first source region (111) are electrically connected; A second load pad (312), wherein the second load pad (312) and the second source region (112) are electrically connected, and wherein the gap (230) laterally separates the first load pad (311) and the second load pad (312); A metal structure (400); A first load connection structure (315) connecting the first load pad (311) and the metal structure (400), and A pad connection structure (390) electrically connecting the first load pad (311) and the second load pad (312), wherein the connection structure (390) has a longitudinal extension at an angle of at least 45 ° to the first load connection structure (315), and wherein the pad connection structure (390) contacts the first load pad (311) and the second load pad (312) at a side located opposite to the semiconductor body (100).
  14. 14. The semiconductor device according to claim 13, Wherein the first load connection structure (315) comprises a load-engaging wiring (394).
  15. 15. The semiconductor device according to any one of claims 13 to 14, Wherein the pad connection structure (390) comprises a bonding wire (393), wherein the bonding wire (393) is in direct contact with the first load pad (311) and the second load pad (312).
  16. 16. The semiconductor device according to any one of claims 13 to 14, further comprising: And a second load connection structure (316) connecting the second load pad (312) and the metal structure (400), the first load connection structure (315) and the second load connection structure (316) being separate.
  17. 17. The semiconductor device of claim 16, Wherein the electrical path of the connection structure (390) is at least 50% shorter than an electrical path formed between the first load pad (311) and the second load pad (312) through the first load connection structure (315), the metal structure (400) and the second load connection structure (316).
  18. 18. An insulated gate bipolar transistor, IGBT, module comprising: The semiconductor device (500) according to any of claims 13 to 17 and/or at least one of the semiconductor die (510) according to any of claims 1 to 11.
  19. 19. An insulated gate bipolar transistor, IGBT, module comprising: a semiconductor die (510), the semiconductor die (510) comprising: A semiconductor body (100) comprising a first active portion (191) and a second active portion (192), the first active portion (191) comprising a first source region (111), the second active portion (192) comprising a second source region (112); a first load pad (311), wherein the first load pad (311) and the first source region (111) are electrically connected, and A second load pad (312), wherein the second load pad (312) and the second source region (112) are electrically connected, and wherein the first load pad (311) and the second load pad (312) are laterally separated; Metal structure (400), and A wire connection structure (590) electrically connecting the first load pad (311) and the second load pad (312) via the metal structure (400), wherein the wire connection structure (590) comprises a bonding wire (591), and wherein the bonding wire (591) of the wire connection structure (590) has an inductance of at most 5nH and/or an overall damping constant of at least 5 x 10 5 s -1 .
  20. 20. The IGBT module of claim 19, Wherein the metal structure (400) comprises at least one of a load current plate (410), a kelvin support structure (420) and an electrode pad (451) of a further semiconductor device (450).

Description

Semiconductor die, semiconductor device, and insulated gate bipolar transistor module Technical Field Examples of the present disclosure relate to a semiconductor die having at least two load pads electrically connected to a source region. The present disclosure further relates to a power MOSFET (metal oxide semiconductor field effect transistor) or IGBT (insulated gate bipolar transistor) module. IGBTs combine the gate drive characteristics of MOSFETs with the high current and low saturation voltage capabilities of bipolar transistors. In an IGBT module, a plurality of IGBTs are electrically connected in parallel to achieve a current handling capability on the order of greater than 100A. There is a need for a semiconductor die that can be used efficiently and variably on a circuit board, on a group of components, and/or in an IGBT module. Disclosure of Invention Embodiments of the present disclosure relate to a semiconductor die that includes a semiconductor body, a gate structure, a first load pad, a second load pad, and a connection structure. The semiconductor body includes a first active portion and a second active portion. The first active portion includes a first source region. The second active portion includes a second source region. The gate structure extends from the first surface into the semiconductor body and has a longitudinal gate extension along a lateral first direction. The first load pad and the first source region are electrically connected. The second load pad and the second source region are electrically connected. The gap separates the first load pad and the second load pad in a lateral direction. The longitudinal extension of the gap in the transverse direction is parallel to the first direction or is not more than 60 degrees away from the first direction. The connection structure electrically connects the first load pad and the second load pad. The connection structure is formed in a recess extending from the first surface into the semiconductor body and/or in a wiring layer formed on the first surface. Another embodiment of the present disclosure relates to a semiconductor device. The semiconductor device includes a semiconductor body, a first load pad, a second load pad, a metal structure, a first load connection structure, and a pad connection structure. The semiconductor body includes a first active portion and a second active portion. The first active portion includes a first source region. The second active portion includes a second source region. The first load pad and the first source region are electrically connected. The second load pad and the second source region are electrically connected. The gap separates the first load pad and the second load pad in a lateral direction. The first load connection structure connects the first load pad and the metal structure. The pad connection structure electrically connects the first load pad and the second load pad. The pad connection structure has a longitudinal extension at an angle of at least 45 degrees to the first load connection structure. The pad connection structure contacts the first load pad and the second load pad at a side positioned opposite the semiconductor body. Another embodiment of the present disclosure relates to an IGBT module. The IGBT module includes a semiconductor device, a metal structure, and a wiring connection structure. The semiconductor device includes a semiconductor body, a first load pad, and a second load pad. The semiconductor body includes a first active portion and a second active portion. The first active portion includes a first source region. The second active portion includes a second source region. The first load pad and the first source region are electrically connected. The second load pad and the second source region are electrically connected. The first load pad and the second load pad are separated in a lateral direction. The wiring connection structure electrically connects the first load pad and the second load pad via the metal structure. The wiring connection structure includes bonding wires. The bonding wire of the wire connection structure has an inductance of at most 20 nH. Those skilled in the art will recognize additional features and advantages upon reading the following detailed description, and upon viewing the accompanying drawings. Drawings The accompanying drawings are included to provide a further understanding of embodiments and are incorporated in and constitute a part of this specification. The drawings illustrate embodiments of semiconductor die, semiconductor device, and IGBT module, and together with the description serve to explain the principles of the embodiments. Further embodiments are described in the following detailed description and claims. Fig. 1A-1B illustrate schematic plan and schematic cross-sectional views of a semiconductor die portion including first and second load pads at a front side and a connection structure connecting the first and second