CN-112951301-B - Method for operating a memory system

Abstract

A method of operating a memory system includes pre-programming multi-page data in a memory controller to a non-volatile memory device, generating a state group code based on multi-bit data in the multi-page data, and each of the state group codes having a number of bits less than a number of bits of the corresponding multi-bit data, detecting whether a sudden power-off occurs after the pre-programming, backing up the state group code to the non-volatile memory device in response to detecting the occurrence of the sudden power-off, recovering the multi-page data from the non-volatile memory device based on the state group code after recovering power from the sudden power-off, reprogramming the multi-page data to the non-volatile memory device, and reprogramming the multi-page data in the memory controller to the non-volatile memory device in response to detecting that the sudden power-off has not occurred.

Inventors

• ZHANG JUNXI

Assignees

• 三星电子株式会社

Dates

Publication Date

20260508

Application Date

20201118

Priority Date

20191126

Claims (20)

1. 1. A method of operation of a memory system comprising a memory controller and a non-volatile memory device, the method of operation comprising: Pre-programming a plurality of pages of data in the memory controller to a plurality of memory cells connected to a first word line in the nonvolatile memory device, wherein the plurality of pages of data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is pre-programmed to have a threshold voltage according to a respective one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of pre-programmed states; Generating a state group code based on the plurality of multi-bit data in the multi-page data, wherein the state group code comprises a plurality of state group data, wherein each of the plurality of state group data has a fewer number of bits than a corresponding one of the plurality of multi-bit data in the multi-page data, wherein each of the plurality of state group data is generated based on a number of "1" bits in the corresponding one of the plurality of multi-bit data; Backing up the state group code to the nonvolatile memory device when a sudden power failure occurs after the memory cells are preprogrammed; Restoring the multi-page data by reading the preprogrammed plurality of memory cells based on the state group code after restoring power from the sudden power outage; Reprogramming the multi-page data recovered from the preprogrammed plurality of memory cells to the preprogrammed plurality of memory cells, and The multi-page data in the memory controller is reprogrammed to the plurality of memory cells that are preprogrammed when the sudden power down does not occur after the memory cells are preprogrammed.
2. 2. The method of operation according to claim 1, Wherein the plurality of preprogrammed states are grouped into N state groups, Wherein each of the N state groups has M of the plurality of preprogrammed states, M being equal to the number of the plurality of preprogrammed states divided by N, M and N being integers, and Wherein each state group data of the plurality of state group data represents a respective one of the N state groups.
3. 3. The method of operation according to claim 2, Wherein said reading said multi-page data from said plurality of memory cells comprises: Setting the read operation of the nonvolatile memory device to a resume read mode, and In the recovery read mode, a first read voltage is applied to the first word line connected to the preprogrammed plurality of memory cells, the first read voltage being determined based on each of the plurality of state group data.
4. 4. A method of operation according to claim 3, Wherein a read voltage level of the first read voltage applied to the first word line to read the multi-page data in the recovery read mode is different from a read voltage level of a second read voltage applied to the first word line to read the multi-page data in a normal read mode.
5. 5. A method of operation according to claim 3, Wherein the first read voltage has a first read voltage level corresponding to a first state group data among the plurality of state group data and a second read voltage level different from the first read voltage level corresponding to a second state group data among the plurality of state group data.
6. 6. A method of operation according to claim 3, Wherein the number of read voltage levels applied to the first word line according to a read command in the recovery read mode is greater than the number of read voltage levels applied to the first word line according to a read command in the normal read mode.
7. 7. A method of operation according to claim 3, Wherein a voltage level of the first read voltage applied to the first word line is adjusted according to whether a memory cell connected to a second word line adjacent to the first word line is in a preprogrammed state.
8. 8. The method of operation according to claim 1, Wherein the program verify voltage for the reprogramming is higher than the program verify voltage for the pre-programming.
9. 9. The method of operation according to claim 1, Wherein the nonvolatile memory device generates the state group code according to a state group code generation command from the memory controller.
10. 10. The method of operation according to claim 1, Wherein said backing up said state group code to said non-volatile memory device is performed by programming said state group code to said non-volatile memory device in a single level cell mode.
11. 11. The method of operation according to claim 1, Wherein said reprogramming said multi-page data comprises: correcting errors in the multi-page data read from the plurality of memory cells being preprogrammed, and Reprogramming the corrected multi-page data to the preprogrammed plurality of memory cells.
12. 12. A method of operation of a memory system comprising a memory controller and a non-volatile memory device, the method of operation comprising: Pre-programming a plurality of pages of data in the memory controller to a plurality of memory cells connected to one word line in the nonvolatile memory device, wherein the plurality of pages of data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is pre-programmed to have a threshold voltage according to a respective one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of pre-programmed states; Generating a state group code based on the plurality of multi-bit data in the multi-page data, wherein the state group code comprises a plurality of state group data, wherein each of the plurality of state group data has a fewer number of bits than a corresponding one of the plurality of multi-bit data in the multi-page data, wherein each of the plurality of state group data is generated based on a number of "1" bits in the corresponding one of the plurality of multi-bit data; backing up the state group code to the nonvolatile memory device; Restoring the multi-page data by reading the plurality of memory cells preprogrammed based on the state group code after restoring power from a sudden power outage occurring after the state group code is backed up; Reprogramming the multi-page data recovered from the preprogrammed memory cells to the memory cells, and When the sudden power down does not occur after the state group code is backed up, the multi-page data in the memory controller is reprogrammed to the plurality of memory cells that are preprogrammed.
13. 13. The method of operation according to claim 12, Wherein the plurality of preprogrammed states are grouped into N state groups, Wherein each of the N state groups has M preprogrammed states of the plurality of preprogrammed states that do not overlap each other, M is equal to the number of the plurality of preprogrammed states divided by N, M and N are integers, and Wherein each state group data of the plurality of state group data represents one of the N state groups.
14. 14. The method of operation according to claim 13, Wherein said reading said multi-page data from said plurality of memory cells comprises: changing a read operation of the nonvolatile memory device from a normal read mode to a resume read mode, and In the recovery read mode, a first read voltage is applied to the word line connected to the preprogrammed plurality of memory cells, the first read voltage being determined based on each of the plurality of state group data.
15. 15. The method of operation according to claim 14, Wherein a read voltage level of the first read voltage applied to the word line to read the multi-page data in the recovery read mode is different from a read voltage level of a second read voltage applied to the word line to read the multi-page data in the normal read mode.
16. 16. The method of operation according to claim 14, Wherein the first read voltage has a first read voltage level corresponding to a first state group data among the plurality of state group data and a second read voltage level different from the first read voltage level corresponding to a second state group data among the plurality of state group data.
17. 17. The method of operation according to claim 14, Wherein the number of read voltage levels applied to the word line according to a read command in the recovery read mode is greater than the number of read voltage levels applied to the word line according to a read command in the normal read mode.
18. 18. A method of operation of a memory system including a memory controller and a nonvolatile memory device, the nonvolatile memory device including a memory cell region including a first metal pad and a peripheral circuit region including a second metal pad and connected to the memory cell region in a vertical direction through the first metal pad and the second metal pad, the method of operation comprising: Pre-programming a plurality of pages of data in the memory controller to a plurality of memory cells connected to a first word line in the nonvolatile memory device, wherein the plurality of pages of data includes a plurality of multi-bit data, wherein each of the plurality of memory cells is pre-programmed to have a threshold voltage according to a respective one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of pre-programmed states; Generating a state group code based on the plurality of multi-bit data in the multi-page data, wherein the state group code comprises a plurality of state group data, wherein each of the plurality of state group data has a fewer number of bits than a corresponding one of the plurality of multi-bit data in the multi-page data, wherein each of the plurality of state group data is generated based on a number of "1" bits in the corresponding one of the plurality of multi-bit data; Backing up the state group code to the nonvolatile memory device when a sudden power failure occurs after the memory cells are preprogrammed; Restoring the multi-page data by reading the preprogrammed plurality of memory cells based on the state group code after restoring power from the sudden power outage; Reprogramming the multi-page data recovered from the preprogrammed plurality of memory cells to the preprogrammed plurality of memory cells, and The multi-page data in the memory controller is reprogrammed to the plurality of memory cells that are preprogrammed when the sudden power down does not occur after the memory cells are preprogrammed.
19. 19. The method of operation according to claim 18, Wherein the first metal pad and the second metal pad are formed of copper.
20. 20. The method of operation according to claim 18, Wherein the first metal pad and the second metal pad are connected to each other in a bonding manner.

Description

Method for operating a memory system Cross Reference to Related Applications The present application claims the benefits of korean patent application No.10-2019-0153551 filed in the korean intellectual property office at 11.26 and korean patent application No.10-2020-0068602 filed in the korean intellectual property office at 5.6.2020, the disclosures of each of which are incorporated herein by reference in their entirety. Technical Field The present inventive concept relates to a semiconductor device, and more particularly, to an operating method of a memory system for effectively completing a program operation when a sudden power-off (SPO) occurs while data is being programmed into a nonvolatile memory device. Background Flash memory devices, which are examples of nonvolatile memory devices, include memory cells having different threshold voltages according to a programmed state. In single-LEVEL CELL (SLC) mode, the memory cell may be programmed to have a threshold voltage corresponding to one of the erased state and the programmed state. In a multi-LEVEL CELL (MLC) mode, memory cells may be programmed to have a threshold voltage corresponding to one of a plurality of programmed states or an erased state. When SPO occurs in a nonvolatile memory device, it may be desirable to perform data backup for memory cells undergoing a program operation. The amount of data to be backed up for the memory cell programmed in the MLC mode is greater than the amount of data to be backed up for the memory cell programmed in the SLC mode, and thus, the capacity required for the auxiliary power supply for data backup increases. Disclosure of Invention According to an exemplary embodiment of the present invention, a method of operating a memory system including a memory controller and a nonvolatile memory device includes pre-programming multi-page data in the memory controller to a plurality of memory cells connected to one word line in the nonvolatile memory device, wherein the multi-page data includes a plurality of multi-bit data, wherein each memory cell in the plurality of memory cells is pre-programmed to have a threshold voltage according to a corresponding one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of preprogrammed states, generating a state group code based on the plurality of multi-bit data in the multi-page data, wherein the state group code includes a plurality of state group data, and wherein a number of bits of each state group data that is less than a corresponding one of the plurality of multi-bit data in the multi-page data, backing up the state group code to the nonvolatile memory device, restoring power from the pre-programmed state to the memory cells by the pre-programmed state memory cells, and restoring the multi-page data from the pre-programmed state to the pre-programmed state after the abrupt power restoration occurs, and the preprogramming of the multi-page data is not performed based on the pre-programmed state group data. According to an exemplary embodiment of the present invention, a method of operating a memory system including a memory controller and a nonvolatile memory device includes pre-programming multi-page data in the memory controller to a plurality of memory cells connected to one word line in the nonvolatile memory device, wherein the multi-page data includes a plurality of multi-bit data, wherein each memory cell in the plurality of memory cells is pre-programmed to have a threshold voltage according to a corresponding one of the plurality of multi-bit data, and wherein the threshold voltage corresponds to one of a plurality of pre-programmed states, generating a state group code based on the plurality of multi-bit data in the multi-page data, wherein the state group code includes a plurality of state group data, and wherein each of the plurality of state group data includes a number of bits less than a corresponding one of the plurality of multi-bit data in the multi-page data, backing up the state group code to the nonvolatile memory device, detecting a sudden power down of the state group code, and restoring the state group code from the pre-programmed state to a state after the sudden power down of the pre-programmed state code occurs, and the state is restored from the pre-programmed state to the plurality of memory cells after the sudden power down of the pre-programmed state code has occurred, and the state is restored from the plurality of pre-programmed state group data is restored to the multi-programmed state data. According to an exemplary embodiment of the present invention, a method of operating a memory system including a memory controller and a nonvolatile memory device, the nonvolatile memory device including a memory cell region including a first metal pad and a peripheral circuit region including a second metal pad and being connected to the memory cell region in a vertical direction through the fir