CN-112951902-B - Electronic device and method for manufacturing the same

CN112951902BCN 112951902 BCN112951902 BCN 112951902BCN-112951902-B

Abstract

The present disclosure provides an electronic device including a first electrode composed of monocrystalline metal nanoparticles, a second electrode composed of monocrystalline metal nanoparticles, wherein the first electrode and the second electrode are arranged in one direction, and one end of the first electrode is disposed opposite to one end of the second electrode, and one end of the first electrode forms a small pitch (10 nm or less) with one end of the second electrode, and a dielectric layer formed of a low dielectric constant material, and the dielectric layer is disposed at least in the pitch. The present disclosure also provides a method of fabricating a small pitch electronic device below 10 nm.

Inventors

ZHANG ZHAOXUAN
WANG KEXIN
HE CHENG
SUN WEI

Assignees

大连理工大学
北京大学

Dates

Publication Date: 20260512
Application Date: 20210113

Claims (7)

1. An electronic device, comprising: A first electrode comprised of monocrystalline metal nanoparticles; A second electrode composed of single-crystal metal nanoparticles, wherein the first electrode and the second electrode are arranged in one direction, one end of the first electrode is disposed opposite to one end of the second electrode, and the one end of the first electrode and the one end of the second electrode form a small space, the space being 3-5 nanometers; A dielectric layer formed of a polymer material having a low dielectric constant of 2.2 to 2.5 and provided at least in the space, the dielectric layer covering a portion of the one end of the first electrode and a portion of the one end of the second electrode; The dielectric layer is arranged to avoid a change in morphology of the first and second electrodes when a high voltage is applied to the first and second electrodes; the dielectric layer is disposed such that a current between the first and second electrodes is less than a tunneling current and an atomic migration current.
2. The electronic device of claim 1, further comprising a substrate, the first electrode and the second electrode being disposed on the substrate.
3. The electronic device according to claim 2, further comprising a first power supply terminal provided at the other end of the first electrode and a second power supply terminal provided at the other end of the second electrode, and applying voltages to the first electrode and the second electrode through the first power supply terminal and the second power supply terminal, respectively.
4. The electronic device according to claim 1, wherein the low dielectric constant polymer material is a polymethyl methacrylate polymer material.
5. The electronic device of any one of claims 1 to 4, wherein the first electrode and the second electrode are single crystal gold nanorods.
6. The electronic device of any one of claims 1 to 4, wherein the first electrode is a positive electrode and the second electrode is a negative electrode.
7. A method of manufacturing the electronic device according to any one of claims 1 to 6, comprising: Depositing a first electrode and a second electrode on a surface of a substrate; Depositing a polymer material of low dielectric constant at least in a space formed between the one end of the first electrode and the one end of the second electrode to form the dielectric layer, and And respectively processing a first power end and a second power end at the other end of the first electrode and the other end of the second electrode.

Description

Electronic device and method for manufacturing the same Technical Field The present disclosure relates to an electronic device and a method of manufacturing the same. Background In order to reduce the thermally/field-induced tunneling current between the closely spaced polycrystalline metal electrodes and to improve electrical performance, it is often desirable to introduce high dielectric constant (ε > 10) oxides, such as hafnium oxide, yttrium oxide, etc., between the polycrystalline metal electrodes. The introduction of high dielectric constant oxide can completely block current between the polycrystalline metal electrodes at small intervals (such as about 5 nanometers). For example, in a high performance transistor with a source-drain electrode spacing of 10 nanometers, hafnium oxide is used for the dielectric layer. However, although the oxide of the high dielectric constant material can obviously reduce the tunneling current, the oxide cannot prevent the electromigration process of metal atoms and ions. Therefore, in electronic devices based on high dielectric constant oxides, the change in current intensity due to the migration of metal atoms, ions, can be widely observed. Compared with a polycrystalline metal electrode, the single-crystal metal electrode has higher crystallization degree, an atomically flat interface and a specific crystal plane orientation. Therefore, single crystal metal electrodes have electrode stability and interfacial electron, atom, ion transport characteristics different from polycrystalline metal materials. Therefore, even if the same dielectric material as that used for the polycrystalline metal electrode is introduced between the single-crystal metal electrodes, the inter-electrode transport property variation may be completely different. The exploration of dielectric materials which are specially used for small-size single crystal metal electrodes plays an important fundamental role in advancing the application of single crystal metal electrode materials. Disclosure of Invention In order to solve one of the above technical problems, the present disclosure provides an electronic device and a method for manufacturing the same. According to one aspect of the present disclosure, an electronic device includes: A first electrode comprised of monocrystalline metal nanoparticles; a second electrode composed of single-crystal metal nanoparticles, wherein the first and second electrodes are arranged in one direction and one end of the first electrode is disposed opposite to one end of the second electrode and the one end of the first electrode forms a small space with the one end of the second electrode, and A dielectric layer formed of a low dielectric constant material, and disposed at least in the space. An electronic device according to at least one embodiment of the present disclosure further includes a substrate on which the first electrode and the second electrode are disposed. An electronic device according to at least one embodiment of the present disclosure further includes a first power terminal provided at the other end of the first electrode and a second power terminal provided at the other end of the second electrode, and applies voltages to the first electrode and the second electrode through the first power terminal and the second power terminal, respectively. In accordance with an electronic device of at least one embodiment of the present disclosure, the dielectric layer is configured to prevent the morphology of the first and second electrodes from changing when a high voltage is applied to the first and second electrodes. In accordance with at least one embodiment of the present disclosure, the low dielectric constant material is a polymethyl methacrylate polymer material. According to the electronic device of at least one embodiment of the present disclosure, the pitch is 3-5 nanometers. According to an electronic device of at least one embodiment of the present disclosure, the first electrode and the second electrode are single-crystal gold nanorods. According to an electronic device of at least one embodiment of the present disclosure, the first electrode is a positive electrode and the second electrode is a negative electrode. In accordance with an electronic device of at least one embodiment of the present disclosure, the dielectric layer is disposed such that the current between the first and second electrodes is less than the tunneling current and the atomic migration current. According to another aspect of the present disclosure, a method for manufacturing an electronic device as described above, includes: Depositing a first electrode and a second electrode on a surface of a substrate; depositing a low dielectric constant material at least in the space formed by the one end of the first electrode and the one end of the second electrode to form the dielectric layer, and And respectively processing a first power end and a second power end at the other end