CN-113064840-B - Memory device and method of operating the same

Abstract

A method of operating a memory device comprising a non-volatile memory device and a controller controlling operation of the non-volatile memory device, the method comprising issuing, by the controller, a first command to the non-volatile memory device, reading, by the non-volatile memory device, first data from an array of memory cells into a page buffer of the non-volatile memory device in response to the first command, issuing, by the controller, a second command to the non-volatile memory device, and outputting, by the non-volatile memory device, to the controller, status information indicating whether a read operation according to the first command has been completed and second data obtained from the page buffer of the non-volatile memory device in response to the second command.

Inventors

• PU JIONGJUN
• Kong Ronghao
• JIN XIANYU
• An Xiyuan

Assignees

• 三星电子株式会社

Dates

Publication Date

20260512

Application Date

20201231

Priority Date

20200102

Claims (18)

1. 1. A method of operating a storage device comprising a non-volatile memory device and a controller that controls operation of the non-volatile memory device, the method comprising: issuing, by the controller, a first command to the non-volatile memory device; reading, by the non-volatile memory device, first data from a memory cell array into a page buffer of the non-volatile memory device in response to the first command; issuing a second command by the controller to the nonvolatile memory device, and Outputting, by the nonvolatile memory device in response to the second command, status information indicating whether a read operation according to the first command has been completed and second data obtained from the page buffer of the nonvolatile memory device to the controller, Wherein both the status information and the second data are sequentially sent to the controller via the same channel, Wherein the outputting further comprises outputting third data during a busy state in which the read operation of the memory cell array has not been completed, wherein the third data is data regarding the nonvolatile memory device.
2. 2. The method of claim 1, further comprising: continuously receiving, by the controller, second data from the nonvolatile memory device when the received state information indicates a ready state in which a read operation of the memory cell array has been completed, and When the received state information indicates the busy state in which a read operation of the memory cell array has not been completed, the receiving of the second data from the nonvolatile memory device is stopped by the controller.
3. 3. The method of claim 2, further comprising reissuing, by the controller, a second command after waiting a first time interval after stopping the reception of the second data.
4. 4. The method of claim 1, further comprising: Switching, by the controller, a read enable signal provided to the nonvolatile memory device after issuing the second command, and After outputting the state information and the second data, when the received state information indicates the busy state in which a read operation has not been completed, switching of the read enable signal is stopped by the controller.
5. 5. The method of claim 4, further comprising generating, by the non-volatile memory device, a data strobe signal synchronized with the read enable signal and outputting second data in synchronization with a rising edge and/or a falling edge of the data strobe signal.
6. 6. The method of claim 1, wherein the third data is at least one of a failed memory cell address or a power state of the memory cell array.
7. 7. The method of claim 1, wherein the outputting further comprises outputting the second data after outputting the status information.
8. 8. The method of claim 1, wherein the controller issues the first command and the second command when the controller is set to the second read mode, and issues the first command, a third command for outputting the status information, and a fourth command for transmitting the second data when the controller is set to the first read mode.
9. 9. A storage device, comprising: nonvolatile memory device, and A controller that controls the nonvolatile memory device and issues a plurality of commands, Wherein the nonvolatile memory device includes: A memory cell array including a plurality of memory cells and reading first data in response to a first command; Control logic to control a read operation of the memory cell array based on the plurality of commands; a page buffer for buffering the first data, and An input/output interface outputting status information indicating whether a read operation has been completed and second data obtained by buffering the first data to the controller in response to a second command, Wherein both the status information and the second data are sequentially sent to the controller via the same channel, Wherein the outputting of the state information further includes outputting third data during a busy state in which the read operation of the memory cell array has not been completed, wherein the third data is data regarding the nonvolatile memory device.
10. 10. The memory device of claim 9, wherein the nonvolatile memory device outputs the state information and the second data in synchronization with a data strobe signal, outputs the state information in synchronization with a first edge of the data strobe signal, and outputs the first data in synchronization with a second edge of the data strobe signal.
11. 11. The memory device of claim 9, wherein the controller issues the second command after waiting a first time interval after issuing the first command, and reissues the second command after waiting a second time interval when the status information received from the nonvolatile memory device indicates the busy state in which a read operation of the memory cell array has not completed.
12. 12. The memory device of claim 9, wherein the controller outputs a read enable signal to the nonvolatile memory device, starts switching the read enable signal after issuing the second command, and stops switching the read enable signal when the received state information indicates the busy state in which a read operation has not been completed.
13. 13. The storage device of claim 9, wherein the input/output interface outputs the second data after outputting the status information.
14. 14. A method of operating a storage device comprising a non-volatile memory device and a controller that controls operation of the non-volatile memory device, the method comprising: Issuing, by the controller, a first command to the non-volatile memory device, wherein the first command is to read first data from the non-volatile memory device; reading, by the non-volatile memory device, the first data from the array of memory cells in response to the first command; Issuing, by the controller, a second command to the non-volatile memory device in a second read mode, wherein the second command is to read the first data from the non-volatile memory device; wherein the second command includes a command for outputting the first data and status information indicating whether reading the first data from the nonvolatile memory device has been completed to the controller, Wherein the second command is issued a predetermined time after the first command is issued, and Transmitting, by the non-volatile memory device, the first data to the controller in response to the second command, Wherein the transferring includes delaying output of the first data for a first time interval in a busy state in which reading the first data from the memory cell array according to the first command has not been completed, and outputting state information indicating the busy state within the first time interval.
15. 15. The method of claim 14, wherein the delaying further comprises completing, by the non-volatile memory device, reading the first data from the array of memory cells within the first time interval after receiving the second command.
16. 16. The method of claim 14, wherein issuing the second command comprises switching, by the controller, the read enable signal for a second time interval after issuing the second command, Wherein the read enable signal is synchronized with a data strobe signal that transfers the first data.
17. 17. The method of claim 16, wherein the delaying further comprises: Determining the busy state, and The data strobe signal is maintained at a constant level regardless of the read enable signal.
18. 18. The method of claim 16, wherein the non-volatile memory device outputs the first data on each rising edge and/or each falling edge of the data strobe signal.

Description

Memory device and method of operating the same Cross Reference to Related Applications The present application claims priority from korean patent application No. 10-2020-0000484 filed on 1/2/2020, the contents of which are incorporated herein by reference in their entirety, and claims the rights and interests of this application. Technical Field Embodiments of the inventive concept are directed to a storage device, and more particularly, to a storage device including a nonvolatile memory device and a controller and an operating method thereof. Background Recently, storage devices such as Solid State Drives (SSDs) have been widely used. The storage device corresponds to a memory system including a nonvolatile memory device such as a flash memory and a controller that controls the nonvolatile memory device. As the performance of the storage device improves, the input/output speed of data between the nonvolatile memory device and the controller in the storage device increases. Accordingly, data can be transmitted or received between the controller and the nonvolatile memory device at high speed. During a read operation, the controller may issue a status command CMD to identify whether the nonvolatile memory device has completed the read operation after issuing the read command CMD, and issue a read command CMD only after the status command indicates READY in order to read data written to the memory device. When a command is transmitted from the controller to the nonvolatile memory device according to a timing parameter having a predefined fixed time value, even if the data input/output speed increases, the input/output efficiency of data transfer decreases. Disclosure of Invention Embodiments of the inventive concept provide a memory device including a nonvolatile memory device and a controller, which may improve or maintain efficiency of input/output operations between the nonvolatile memory device and the controller, and an operating method thereof. According to an embodiment of the inventive concept, there is provided a method of operating a memory device including a nonvolatile memory device and a controller controlling an operation of the nonvolatile memory device, the method including issuing, by the controller, a first command to the nonvolatile memory device, reading, by the nonvolatile memory device, first data from a memory cell array into a page buffer of the nonvolatile memory device in response to the first command, issuing, by the controller, a second command to the nonvolatile memory device, and outputting, by the nonvolatile memory device, to the controller, status information indicating whether a read operation according to the first command has been completed and second data obtained from the page buffer of the nonvolatile memory device in response to the second command. According to another embodiment of the inventive concept, there is provided a storage device including a nonvolatile memory device and a controller controlling the nonvolatile memory device and issuing a plurality of commands. The nonvolatile memory device includes a memory cell array including a plurality of memory cells and reading first data in response to a first command, control logic controlling a read operation of the memory cell array based on the plurality of commands, a page buffer buffering the first data, and an input/output interface outputting status information indicating whether the read operation has been completed and second data obtained by buffering the first data to a controller in response to a second command. According to another embodiment of the inventive concept, there is provided a method of operating a memory device including a nonvolatile memory device and a controller controlling an operation of the nonvolatile memory device, the method including issuing, by the controller, a first command to the nonvolatile memory device, reading, by the nonvolatile memory device, first data from a memory cell array in response to the first command, issuing, by the controller, a second command in a second read mode, the second command for transmitting status information indicating whether a read operation of the memory cell array according to the first command has been completed and the first data to the controller, and issuing, by the controller, a third command for outputting the status information and a fourth command for transmitting the first data in the first read mode. Drawings Fig. 1 is a block diagram illustrating a storage device according to an embodiment. Fig. 2 is a timing diagram illustrating the timing of signals and commands generated and issued in a memory device according to an embodiment. FIG. 3 illustrates a non-volatile memory device according to an embodiment. Fig. 4 is a block diagram of a controller according to an embodiment. Fig. 5 is a block diagram more specifically illustrating a controller according to an embodiment. Fig. 6 is a block diagram more specifically illustrating a control