CN-113346008-B - Embedded device

Abstract

The embedded device includes a first insulating layer, a second insulating layer on the first insulating layer, a lower electrode contact in the first insulating layer in a first region, a first structure in the second insulating layer and contacting the lower electrode contact, the first structure having a lower electrode, a magnetic tunnel junction, and an upper electrode, a first metal wiring structure passing through the first and second insulating layers in the second region, a third insulating layer on the second insulating layer, a bit line structure passing through the third insulating layer and the second insulating layer in the first region, the bit line structure having a first height and contacting the upper electrode, and a second metal wiring structure passing through the third insulating layer in the second region, the second metal wiring structure contacting the first metal wiring structure and having a second height lower than the first height.

Inventors

• LI JIGAO
• Gao Kuanxie
• JIN YUZHEN

Assignees

• 三星电子株式会社

Dates

Publication Date

20260505

Application Date

20210218

Priority Date

20200218

Claims (16)

1. 1. An embedded device, comprising: A first molded insulating layer on a substrate, the substrate comprising a first region and a second region; a second molded insulating layer on the first molded insulating layer; a lower electrode contact in the first molded insulating layer, the lower electrode contact on the first region of the substrate; A first structure in the second mold insulating layer and contacting an upper surface of the lower electrode contact, the first structure comprising a stack of a lower electrode, a Magnetic Tunnel Junction (MTJ) structure, and an upper electrode; A first metal wiring structure penetrating through the first and second mold insulating layers in the second region of the substrate; A third molded insulating layer on the second molded insulating layer; A bit line structure including a bit line contact and a bit line and passing through an upper portion of the second mold insulating layer and the third mold insulating layer in the first region, the bit line structure having a first height in a vertical direction and contacting the upper electrode of the first structure, and A second metal wiring structure including a second via contact and a second metal wiring and penetrating through the third molding insulating layer in the second region, the second metal wiring structure contacting the first metal wiring structure, and the second metal wiring structure having a second height in the vertical direction, the second height being smaller than the first height of the bit line structure, The upper surface of the second passage contact has a circular shape having a first width in each of a first direction and a second direction perpendicular to each other, and An upper surface of the bit line contact has an elliptical shape having the first width in the first direction and a third width in the second direction, the third width being greater than the first width.
2. 2. The embedded device of claim 1, wherein a height of the bit line contact in the vertical direction is higher than a height of the second via contact in the vertical direction.
3. 3. The embedded device of claim 1, wherein the bit line and the second metal wire extend in the second direction.
4. 4. The embedded device of claim 3, wherein the bit line has a second width in the first direction that is greater than the first width.
5. 5. The embedded device of claim 4, wherein a width of the bit line in the first direction is the same as a width of the second metal wire in the first direction.
6. 6. The embedded device of claim 5, wherein a bottom of the bit line structure is lower than a bottom of the second metal wiring structure.
7. 7. The embedded device of claim 1, wherein the second molded insulating layer is on a top surface of the first structure and a thickness from the top surface of the first structure to an upper surface of the second molded insulating layer is in a range of 100 a to 800 a.
8. 8. The embedded device of claim 1, wherein the first height is 100 a to 800 a higher than the second height.
9. 9. The embedded device of claim 1, wherein the second height is in a range of 500 a to 5000 a.
10. 10. An embedded device, comprising: A first molded insulating layer on a substrate, the substrate comprising a first region and a second region; a second molded insulating layer on the first molded insulating layer; A lower electrode contact in the first molding insulating layer in the first region; A first structure in the second molding insulating layer in the first region, the first structure contacting an upper surface of the lower electrode contact, and the first structure including a stacked lower electrode, a Magnetic Tunnel Junction (MTJ) structure, and an upper electrode; A first metal wiring structure passing through the first and second mold insulating layers in the second region; A third molded insulating layer on the second molded insulating layer; A bit line structure including a bit line contact and a bit line and passing through the third molding insulating layer in the first region and through an upper portion of the second molding insulating layer, the bit line structure contacting the upper electrode of the first structure, and A second metal wiring structure including a second via contact and a second metal wiring and passing through the third molded insulating layer in the second region, the second metal wiring structure contacting the first metal wiring structure; Wherein the height of the bit line structure in the vertical direction is different from the height of the second metal wiring structure in the vertical direction, and Wherein the shape of the bit line structure is different from the shape of the second metal wiring structure, The upper surface of the second passage contact has a circular shape having a first width in each of a first direction and a second direction perpendicular to each other, and An upper surface of the bit line contact has an elliptical shape having the first width in the first direction and a third width in the second direction, the third width being greater than the first width.
11. 11. The embedded device of claim 10, wherein: the height of the bit line contact in the vertical direction is higher than the height of the second via contact in the vertical direction.
12. 12. The embedded device of claim 11, wherein the second metal wiring structure has a second height in the vertical direction and the bit line structure has a first height in the vertical direction that is higher than the second height.
13. 13. The embedded device of claim 10, wherein the bit line and the second metal wire extend in the second direction.
14. 14. The embedded device of claim 13, wherein the bit line has a second width in the first direction that is greater than the first width.
15. 15. An embedded device, comprising: A substrate including a first region and a second region; a lower electrode contact on the substrate in the first region; a first structure contacting an upper surface of the lower electrode contact, the first structure including a stacked lower electrode, a Magnetic Tunnel Junction (MTJ) structure, and an upper electrode; A first metal wiring structure on the substrate in the second region, an upper surface of the first metal wiring structure being higher than an upper surface of the first structure; a bit line structure including a bit line contact and a bit line and contacting the upper electrode of the first structure, and A second metal wiring structure including a second via contact and a second metal wiring and contacting the first metal wiring structure, a height of the bit line structure in a vertical direction being different from a height of the second metal wiring structure in the vertical direction, The upper surface of the second passage contact has a circular shape having a first width in each of a first direction and a second direction perpendicular to each other, and An upper surface of the bit line contact has an elliptical shape having the first width in the first direction and a third width in the second direction, the third width being greater than the first width.
16. 16. The embedded device of claim 15, wherein a height of the bit line structure in the vertical direction is 100 a to 800 a higher than a height of the second metal wiring structure in the vertical direction.

Description

Embedded device Technical Field Example embodiments relate to a semiconductor device and a method of manufacturing the same. More particularly, example embodiments relate to an embedded device including a Magnetoresistive Random Access Memory (MRAM) device and a method of manufacturing the same. Background An embedded device may be provided in which a Magnetic Tunnel Junction (MTJ) module may be inserted into back end of line (BEOL) wiring of a logic device. In this case, in order to add MTJ modules without changing the layout and/or architecture of the logic device, the layout of BEOL wiring may be designed. Disclosure of Invention According to example embodiments, an embedded device is provided that may include a first molded insulating layer, a second molded insulating layer, a lower electrode contact, a first structure, a first metal wiring structure, a third molded insulating layer, a bit line structure, and a second metal wiring structure. The first mold insulating layer may be formed on the substrate including the first region and the second region. The second mold insulating layer may be formed on the first mold insulating layer. The lower electrode contact may be formed in the first mold insulating layer of the first region. The first structure may be formed in the second molded insulating layer of the first region. The first structure may contact an upper surface of the lower electrode contact. The first structure may include a stacked lower electrode, a Magnetic Tunnel Junction (MTJ) structure, and an upper electrode. The first metal wiring structure may pass through the first and second molding insulating layers in the second region. The third mold insulating layer may be formed on the second mold insulating layer. The bit line structure may pass through an upper portion of the second mold insulating layer and the third mold insulating layer in the first region, the bit line structure contacting the upper electrode. The second metal wiring structure may pass through the third molding insulating layer in the second region, and the second metal wiring structure may contact the first metal wiring structure. The second metal wiring structure may have a second height in a vertical direction, and the bit line structure may have a first height higher than the second height in the vertical direction. According to example embodiments, an embedded device is provided that may include a first molded insulating layer, a second molded insulating layer, a lower electrode contact, a first structure, a first metal wiring structure, a third molded insulating layer, a bit line structure, and a second metal wiring structure. The first mold insulating layer may be formed on the substrate including the first region and the second region. The second mold insulating layer may be formed on the first mold insulating layer. The lower electrode contact may be formed in the first mold insulating layer of the first region. The first structure may be formed in the second molded insulating layer of the first region. The first structure may contact an upper surface of the lower electrode contact. The first structure may include a stacked lower electrode, a Magnetic Tunnel Junction (MTJ) structure, and an upper electrode. The first metal wiring structure may pass through the first and second molding insulating layers in the second region. The third mold insulating layer may be formed on the second mold insulating layer. The bit line structure may pass through an upper portion of the second mold insulating layer and the third mold insulating layer in the first region. The bit line structure may contact the upper electrode. The second metal wiring structure may pass through the third molding insulating layer in the second region. The second metal wiring structure may contact the first metal wiring structure. The height of the bit line structure in the vertical direction may be different from the height of the second metal wiring structure in the vertical direction. The shape of the bit line structure is different from the shape of the second metal wiring structure. According to example embodiments, an embedded device is provided that may include a substrate, a lower electrode contact, a first structure, a first metal wiring structure, a bit line structure, and a second metal wiring structure. The substrate may include a first region and a second region. The lower electrode contact may contact the substrate in the first region. The first structure may contact an upper surface of the lower electrode contact. The first structure may include a stacked lower electrode, a Magnetic Tunnel Junction (MTJ) structure, and an upper electrode. The first metal wiring structure may be formed on the substrate in the second region. The upper surface of the first metal wiring structure may be higher than the upper surface of the first structure. The bit line structure may contact the upper electrode of the first structure. The second metal wiring s