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CN-113451096-B - Edge ring, replacement method thereof, substrate supporting table and plasma processing system

CN113451096BCN 113451096 BCN113451096 BCN 113451096BCN-113451096-B

Abstract

The invention provides an edge ring, a substrate supporting table, a plasma processing system and a replacement method of the edge ring, which are provided with a substrate placing surface for placing a substrate, a ring placing surface for placing the edge ring, wherein the edge ring is configured in a mode of surrounding the substrate placed on the substrate placing surface, and an electrode for adsorbing and holding the edge ring on the ring placing surface by electrostatic force, a heat transfer sheet is adhered on the surface opposite to the ring placing surface, the heat transfer sheet is placed on the ring placing surface through the heat transfer sheet, a conductive film is arranged on the surface opposite to the ring placing surface, and the edge ring is held on the ring placing surface by adsorbing the conductive film adhered on the heat transfer sheet of the edge ring through electrostatic force formed by the electrode. According to the present invention, the heat conductivity between the edge ring and the substrate support base via the heat transfer sheet can be maintained, and the peelability of the heat transfer sheet from the substrate support base can be improved.

Inventors

  • Shi Benhong
  • A stranger is born
  • LI LIFU

Assignees

  • 东京毅力科创株式会社
  • 东京毅力科创株式会社

Dates

Publication Date
20260421
Application Date
20210311
Priority Date
20200324

Claims (12)

  1. 1. A substrate support table, comprising: A substrate mounting surface on which a substrate is mounted; A ring mounting surface for mounting an edge ring, wherein the edge ring is disposed so as to surround a substrate mounted on the substrate mounting surface, and An electrode for attracting and holding the edge ring to the ring mounting surface by electrostatic force, The edge ring is adhered with a heat transfer sheet on a surface opposite to the ring mounting surface, and is mounted on the ring mounting surface via the heat transfer sheet, The heat transfer sheet is gelled to have adhesiveness when adhered to the edge ring, and is adhered to the edge ring by using the adhesiveness, The heat transfer sheet has a conductive film formed on a surface thereof facing the ring mounting surface, The edge ring is held on the ring mounting surface by attracting the conductive film of the heat transfer sheet attached to the edge ring by means of an electrostatic force generated by the electrode.
  2. 2. The substrate support table of claim 1, wherein: The ring mounting surface is not formed with a gas supply hole for supplying a heat transfer gas.
  3. 3. The substrate support table according to claim 1 or 2, wherein: The edge ring has a concave portion on a surface opposite to the ring mounting surface, The heat transfer sheet is adhered to the concave portion.
  4. 4. The substrate support table according to claim 1 or 2, wherein: The edge ring is formed of quartz.
  5. 5. The substrate support table according to claim 1 or 2, wherein: The edge ring is formed of Si or SiC.
  6. 6. The substrate support table according to claim 1 or 2, wherein: the conductive film is formed of Al.
  7. 7. The substrate support table according to claim 1 or 2, wherein: The thickness of the conductive film is 10 μm or less.
  8. 8. The substrate support table according to claim 1 or 2, wherein: Has a lifting member for lifting and lowering the edge ring.
  9. 9. The substrate support table of claim 8, wherein: The lifting member has a columnar portion extending in the vertical direction below, and an area of an abutment surface with the edge ring is larger than a cross-sectional area of the columnar portion.
  10. 10. The substrate support table of claim 8, wherein: The edge ring is not formed with the heat transfer sheet and the conductive film at a portion of a surface facing the ring mounting surface, the portion being in contact with the lifting member.
  11. 11. A plasma processing system, comprising: a plasma processing apparatus comprising the substrate support table according to any one of claims 8 to 10, a processing container configured to be capable of being provided therein and configured to be depressurized, a voltage applying section configured to apply a voltage to the electrode, and a lifting mechanism configured to lift the lifting member, wherein the plasma processing apparatus performs a plasma process on a substrate on the substrate support table; a transport device having a support portion for supporting the edge ring, for inserting or extracting the support portion into or from the processing container, for feeding or extracting the edge ring to or from the processing container, and A control device for controlling the voltage applying part, the lifting mechanism and the conveying device, The control device controls the voltage applying section, the lifting mechanism, and the conveying device to perform: A step of transferring the edge ring supported by the support portion to the substrate support table; A step of raising the lifting member and transferring the edge ring from the support portion to the lifting member; A step of lowering the lifting member after the support portion is retracted, and placing the edge ring on the ring placement surface via the heat transfer sheet attached to the edge ring, and And a step of applying a voltage to the electrode, and holding the edge ring on the ring mounting surface by adsorbing the conductive film of the heat transfer sheet attached to the edge ring by the electrostatic force generated thereby.
  12. 12. A method of replacing an edge ring in a plasma processing apparatus, comprising: The plasma processing apparatus includes: a processing container configured to be depressurized, and A substrate support table provided in the processing container, The substrate support table has: A substrate mounting surface on which a substrate is mounted; a ring mounting surface on which the edge ring is mounted, wherein the edge ring is disposed so as to surround the substrate mounted on the substrate mounting surface; an electrode for attracting and holding the edge ring to the ring mounting surface by electrostatic force, and A lifting component for lifting the edge ring, The edge ring is adhered with a heat transfer sheet on a surface opposite to the ring mounting surface, the heat transfer sheet is gelled to have adhesiveness when adhered to the edge ring, and is adhered to the edge ring by using the adhesiveness, The heat transfer sheet has a conductive film formed on a surface thereof facing the ring mounting surface, The replacement method comprises the following steps: A step of conveying the edge ring supported by a support part of a conveying device to a position above the substrate support table; A step of raising the lifting member and transferring the edge ring from the support portion to the lifting member; A step of lowering the lifting member after the support portion is retracted, and placing the edge ring on the ring placement surface via the heat transfer sheet attached to the edge ring, and And a step of applying a voltage to the electrode, and holding the edge ring on the ring mounting surface by adsorbing the conductive film of the heat transfer sheet attached to the edge ring by the electrostatic force generated thereby.

Description

Edge ring, replacement method thereof, substrate supporting table and plasma processing system Technical Field The invention relates to an edge ring, a substrate supporting table, a plasma processing system and a method for replacing the edge ring. Background Patent document 1 discloses a technique of disposing a heat transfer sheet having adhesiveness and flexibility between a focus ring provided in a substrate processing apparatus and a mounting table. The substrate processing apparatus disclosed in patent document 2 includes a mounting table having a base portion with a substrate mounting surface on which a substrate is mounted and a focus ring mounting surface on which a focus ring is mounted, and a plurality of positioning pins. The substrate processing apparatus includes a lift pin and a transport arm. The pushing pins are provided on the mounting table so as to extend out of and retract into the focus ring mounting surface, and lift the focus ring from the focus ring mounting surface for each positioning pin. The transfer arm is provided outside the processing chamber, and the focus ring is replaced between the transfer arm and the lift pin via a transfer port provided in the processing chamber in a state where the positioning pin is attached. The substrate processing apparatus disclosed in patent document 3 includes a plurality of electrodes and a supply section. The plurality of electrodes are provided in a region corresponding to the focus ring in the electrostatic chuck on which the substrate is placed, and a voltage for attracting the focus ring is applied to the electrostatic chuck. The supply unit supplies a heat medium to a space sandwiched between a focus ring provided on the electrostatic chuck so as to surround a region where the substrate is placed and the electrostatic chuck. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2016-119334. Patent document 2, japanese patent application laid-open No. 2011-054933. Patent document 3 Japanese patent application laid-open No. 2016-122740. Disclosure of Invention Problems to be solved by the invention The technology of the invention maintains the heat conductivity between the edge ring of the heat transfer sheet and the substrate supporting table, and improves the stripping performance of the heat transfer sheet from the substrate supporting table. Means for solving the problems The substrate supporting table has a substrate mounting surface on which a substrate is mounted, a ring mounting surface on which an edge ring is mounted, wherein the edge ring is disposed so as to surround the substrate mounted on the substrate mounting surface, and an electrode for attracting and holding the edge ring to the ring mounting surface by electrostatic force, wherein a heat transfer sheet is attached to a surface of the edge ring facing the ring mounting surface, and is mounted on the ring mounting surface via the heat transfer sheet, and a conductive film is formed on a surface of the heat transfer sheet facing the ring mounting surface, and wherein the edge ring is held on the ring mounting surface by attracting the conductive film attached to the heat transfer sheet of the edge ring by electrostatic force formed by the electrode. Effects of the invention According to the present invention, the heat transfer sheet can be peeled from the substrate support table while maintaining the heat conductivity between the edge ring and the substrate support table via the heat transfer sheet. Drawings Fig. 1 is a plan view showing a schematic configuration of a plasma processing system according to the present embodiment. Fig. 2 is a vertical sectional view showing a schematic configuration of the process module. Fig. 3 is a cross-sectional view showing a schematic structure of the heat transfer sheet. Fig. 4 is a view for explaining another example of the edge ring. Fig. 5 is a view for explaining another example of the lifter pin. Fig. 6 is a view for explaining another example of the lifter pin. Fig. 7 is a view for explaining another example of the edge ring. Description of the reference numerals 60. Processing module 70. Conveying device 71. Conveying arm 100. Plasma processing chamber 100S plasma processing space 101. Wafer supporting table 104A wafer mounting surface 104B ring mounting surface 107. Lifting pin 109. Electrode 109A electrode 109B electrode 200. Lifting pin 210. Lifting pin E edge ring E1 Edge ring E2 Edge ring T-shaped heat transfer sheet Ta conductive film W wafer Detailed Description In a process for manufacturing a semiconductor device or the like, plasma processing such as etching and film formation is performed on a substrate such as a semiconductor wafer (hereinafter, referred to as a "wafer") using plasma. The plasma processing is performed in a state in which the wafer is placed on a substrate support table in a processing container and the interior of the processing container is depressuri