CN-113555482-B - Light-emitting element and method for manufacturing same

CN113555482BCN 113555482 BCN113555482 BCN 113555482BCN-113555482-B

Abstract

The invention discloses a light-emitting element and a manufacturing method thereof, wherein the light-emitting element comprises a semiconductor laminated layer, a first protection layer, a dielectric material laminated layer and a metal structure, wherein the semiconductor laminated layer comprises a first semiconductor layer, an active area, a second semiconductor layer and an exposure area, the exposure area comprises the upper surface of the first semiconductor layer and the side wall of the semiconductor laminated layer, the first protection layer is used for covering the exposure area and the semiconductor laminated layer, the dielectric material laminated layer is arranged on the semiconductor laminated layer and comprises a plurality of dielectric material pairs and one or a plurality of first openings, the dielectric material pairs are formed by alternately stacking dielectric materials with different refractive indexes, the metal structure is arranged on a first reflecting structure and is electrically connected with the second semiconductor layer by filling the one or the plurality of first openings, the first protection layer comprises a first part which is arranged on the upper surface of the first semiconductor layer of the exposure area and has a first thickness, and the second part which is arranged on the second semiconductor layer and has a second thickness, and the first thickness is smaller than the second thickness.

Inventors

YANG ZHIYONG
WANG XINYING
GUO DESHAN
CHEN ZHAOXING
LIN YIHONG
Hong Mengxiang
HONG GUOQING
LV ZHENGLIN

Assignees

晶元光电股份有限公司

Dates

Publication Date: 20260508
Application Date: 20210423
Priority Date: 20200423

Claims (13)

1.A light-emitting element, comprising: A semiconductor stack including a first semiconductor layer, an active region, a second semiconductor layer, and an exposed region, wherein the exposed region includes an upper surface of the first semiconductor layer and a sidewall of the semiconductor stack; a first protective layer covering the exposed region and the semiconductor stack; a first dielectric material layer stack on the semiconductor layer stack, comprising a plurality of dielectric material pairs formed by alternately stacking dielectric materials with different refractive indexes and one or more first openings, and A metal structure on the first dielectric material layer stack, filling the one or more first openings and electrically connecting the second semiconductor layer; The first protection layer comprises a first part which is positioned on the upper surface of the first semiconductor layer of the exposure area and has a first thickness, and a second part which is positioned on the second semiconductor layer and has a second thickness, wherein the first thickness is smaller than the second thickness.
2. The light-emitting element according to claim 1, wherein: the first protective layer comprises a lower protective layer and an upper protective layer, the lower protective layer contacting the semiconductor stack, and The first dielectric material stack is located between the lower protective layer and the upper protective layer.
3. The light emitting device of claim 2, wherein the metal structure is located under the upper protective layer.
4. The light-emitting device according to claim 1, further comprising a first electrode on the first passivation layer, and the first passivation layer comprises one or more third openings on the exposed region, wherein the first electrode contacts the upper surface of the first semiconductor layer through the one or more third openings.
5. A light emitting element comprising: A semiconductor stack including a first semiconductor layer, an active region, a second semiconductor layer, and an exposed region, wherein the exposed region includes an upper surface of the first semiconductor layer and a sidewall of the semiconductor stack; a lower protective layer covering the semiconductor stack and the exposed region; a first dielectric material lamination layer covering the semiconductor lamination layer, comprising a plurality of dielectric material pairs formed by alternately stacking dielectric materials with different refractive indexes and one or a plurality of first openings; a metal structure on the first dielectric material layer stack, filling the one or more first openings and electrically connecting the second semiconductor layer; An upper protection layer covering the semiconductor stack and the metal structure and including a plurality of second openings exposing the exposed region and the metal structure, respectively, and A first electrode on the upper protective layer; Wherein the first dielectric material stack is located between the upper protective layer and the lower protective layer, one of the plurality of second openings of the upper protective layer comprises a second sloped sidewall, and the first electrode conformally covers the second sloped sidewall and contacts the exposed region.
6. The light emitting device of claim 1 or 5, further comprising an etch stop layer between the second semiconductor layer and the first dielectric material stack, and the one or more first openings expose the etch stop layer.
7. The light emitting device of claim 6, wherein the etch stop layer comprises a transparent conductive layer or a metal structure.
8. The light-emitting element according to claim 2 or 5, further comprising: A second electrode on the upper protective layer; A second protective layer on the second electrode covering the exposed region and including a second opening exposing the second electrode, and The bonding pad is connected with the second electrode through the second opening.
9. The light emitting device of claim 8, further comprising a substrate underlying the semiconductor stack, wherein the semiconductor stack comprises a semiconductor stack sidewall connected to the substrate, and the second passivation layer covers the semiconductor stack sidewall.
10. The light emitting device of claim 8, wherein the second protective layer comprises a second dielectric material stack comprising a plurality of dielectric material pairs of alternating stacks of dielectric materials of different refractive indices; Wherein the second protective layer comprises m pairs of dielectric materials and the first dielectric material stack comprises n pairs of dielectric materials, wherein m is greater than n.
11. The light-emitting device of claim 1 or 5, wherein the exposed region comprises a plurality of first exposed regions located in an inner region of the semiconductor stack and a plurality of second exposed regions located in a surrounding region of the semiconductor stack as viewed from above.
12. The light-emitting device of claim 11, wherein the first openings between two adjacent first exposed regions have a distribution density, as viewed from above, that is less than the distribution density of the first openings in the other regions.
13. The light emitting device of claim 1 or 5, wherein the first opening comprises a first sloped sidewall having an angle between 5 degrees and 80 degrees.

Description

Light-emitting element and method for manufacturing same Technical Field The present invention relates to a light emitting device, and more particularly, to a light emitting device with improved brightness. Background Light Emitting Diodes (LEDs) in solid state light emitting devices have low power consumption, low heat generation, long life, small size, fast response speed, and good photoelectric characteristics, such as stable light emission wavelength, and thus have been widely used in household appliances, indicator lamps, and photoelectric products. The conventional light emitting diode includes a substrate, an n-type semiconductor layer, an active region, a p-type semiconductor layer formed on the substrate, and p-and n-electrodes formed on the p-type/n-type semiconductor layer, respectively. When the light emitting diode is energized through the electrode and forward biased at a specific value, holes from the p-type semiconductor layer and electrons from the n-type semiconductor layer combine in the active region to emit light. However, as the led is applied to different optoelectronic products, the brightness specification of the led is also improved, and how to improve the brightness is one of the targets of research and development in the field of the technology. Disclosure of Invention The invention discloses a light-emitting element, which comprises a semiconductor laminated layer, a first reflecting structure and a second reflecting structure, wherein the semiconductor laminated layer sequentially comprises a first semiconductor layer, an active area and a second semiconductor layer, the first semiconductor layer comprises a first semiconductor layer upper surface, an exposed area is arranged in the semiconductor laminated layer and exposes the first semiconductor layer upper surface, the first protecting layer covers the exposed area and part of the second semiconductor layer, the first reflecting structure is arranged on the second semiconductor layer and comprises one or more first openings, the second reflecting structure is arranged on the first reflecting structure and is electrically connected with the second semiconductor layer through the first openings, one part of the first protecting layer is arranged on the first semiconductor layer upper surface and has a first thickness, the other part of the first protecting layer is arranged on the second semiconductor layer and has a second thickness, and the first thickness is smaller than the second thickness. The invention discloses a light-emitting element, which comprises a semiconductor laminated layer, a first reflecting structure, a second reflecting structure, an electrode, a second protecting layer and a welding pad, wherein the semiconductor laminated layer sequentially comprises a first semiconductor layer, an active area and a second semiconductor layer, the first semiconductor layer comprises a first semiconductor layer upper surface, the exposed area is positioned in the semiconductor laminated layer and exposes the upper surface of the first semiconductor layer, the first protecting layer covers the exposed area and part of the second semiconductor layer, the etching stopping layer is positioned on the second semiconductor layer, the first reflecting structure is positioned on the etching stopping layer and comprises one or more first openings, the first openings expose the etching stopping layer, the second reflecting structure is positioned on the first reflecting structure and is electrically connected with the etching stopping layer and the second semiconductor layer through the first openings, the electrode is positioned on the first protecting layer, the second protecting layer covers the exposed area and comprises a second opening exposed electrode, and the welding pad is connected with the electrode through the second openings. Drawings Fig. 1A is a top view of a light emitting device 1, 2 according to an embodiment of the present invention; Fig. 1B is a cross-sectional view of a light emitting device 1 according to an embodiment of the present invention; fig. 1C is a partial sectional view of a light emitting element 1 according to an embodiment of the present invention; fig. 1D is a cross-sectional view of a light emitting device 2 according to an embodiment of the present invention; FIG. 1E is a partial cross-sectional view of a light emitting device 2 according to an embodiment of the present invention; Fig. 2A to 2H are top views of a method for manufacturing a light emitting device 1 according to an embodiment of the invention at various stages; Fig. 3A to 3F are sectional views of a light emitting device 1 according to an embodiment of the present invention at various stages in the manufacturing method; fig. 4A to 4C are sectional views of a portion of a method for manufacturing a light emitting device 1 according to an embodiment of the invention; fig. 5A and 5B are sectional views of a portion of a method for m