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CN-113874992-B - Substrate processing apparatus and substrate processing method

CN113874992BCN 113874992 BCN113874992 BCN 113874992BCN-113874992-B

Abstract

The inner peripheral end (74 a) of the 1 st shield tip (86) faces the peripheral end surface (Wc) of the substrate (W) with a1 st annular gap (C1) therebetween in the horizontal direction. The inner peripheral end (75 a) of the 2 nd shield tip portion (88) faces the outer peripheral end (28C) of the disk portion (28) with a2 nd annular gap (C2) therebetween in the horizontal direction. The substrate-facing surface (26 a) is kept at a predetermined distance (WU) from the surface (Wa) of the substrate (W), and the shielding member (6) is opposed to the substrate (W). The total (L1+L2) of the distances (L1) and (L2) of the 1 st annular gap (C1) and the 2 nd annular gap (C2) is equal to or more than the flow path Width (WF) in the Exhaust Path (EP), and is equal to or less than the interval (WU) between the substrate opposite surface (26 a) and the surface (Wa) of the substrate (W) (WF (L1+L2). Ltoreq.WU)).

Inventors

  • NAKAI HITOSHI

Assignees

  • 株式会社斯库林集团

Dates

Publication Date
20260505
Application Date
20200528
Priority Date
20190628

Claims (13)

  1. 1. A substrate processing apparatus comprising: A chamber; a substrate holding unit disposed below a substrate, the substrate holding unit having a base plate smaller than the substrate in a plan view, the substrate being held horizontally on the base plate in the chamber; A shielding member having a circular plate portion provided with a substrate facing surface facing the upper surface of the substrate held by the substrate holding unit with a gap therebetween; A process bowl having an inner shield and an outer shield, the inner shield having a1 st cylindrical portion surrounding a periphery of the substrate holding unit and a1 st shield tip portion extending from an upper end of the 1 st cylindrical portion toward a plumb line passing through a center portion of the substrate held by the substrate holding unit, an inner peripheral end of the 1 st shield tip portion being directly opposed to a peripheral end surface of the substrate in a horizontal direction with a1 st annular gap therebetween, the outer shield having a2 nd cylindrical portion surrounding the periphery of the 1 st cylindrical portion and a2 nd shield tip portion extending from an upper end of the 2 nd cylindrical portion toward the plumb line and being located above the 1 st shield tip portion, an inner peripheral end of the 2 nd shield tip portion being horizontally opposed to an outer peripheral end of the circular plate portion with a2 nd annular gap therebetween, the process bowl being internally formed with a1 st space divided by the 1 st shield tip portion and the 2 nd shield tip portion and an exhaust path dividing the 1 st space and communicating with the 1 st space; An inert gas supply unit that supplies an inert gas to a 2 nd space formed between the substrate held by the substrate holding unit and the shielding member and communicating with the 1 st space; a chemical liquid supply unit for supplying chemical liquid to the upper surface of the substrate held by the substrate holding unit, and A control device for controlling the inactive gas supply unit and the chemical liquid supply unit, The control device performs the following steps: a positive pressure maintaining step of supplying an inert gas to the 2 nd space by the inert gas supply means in a state in which an inner peripheral end of the 1 st shield tip portion is directly opposed to a peripheral end face of the substrate in a horizontal direction with a1 st annular gap therebetween and an inner peripheral end of the 2 nd shield tip portion is opposed to an outer peripheral end of the disk portion in a horizontal direction with a2 nd annular gap therebetween, and maintaining both the 1 st space and the 2 nd space at positive pressure, and And a chemical solution treatment step of supplying chemical solution to the upper surface of the substrate held by the substrate holding unit by the chemical solution supply unit in parallel with the positive pressure maintaining step, and performing treatment using the chemical solution on the upper surface of the substrate.
  2. 2. The substrate processing apparatus according to claim 1, wherein, The positive pressure maintaining step includes a step of supplying an inert gas to the 2 nd space at a flow rate greater than a flow rate of the exhaust gas discharged from the exhaust path.
  3. 3. The substrate processing apparatus according to claim 1, wherein, The flow path width in the exhaust path is equal to or less than a total gap distance, which is a total of the distance of the 1 st annular gap and the distance of the 2 nd annular gap.
  4. 4. The substrate processing apparatus according to claim 3, wherein, The total gap distance is equal to or less than a distance between an upper surface of the substrate held by the substrate holding unit and the substrate facing surface of the shielding member.
  5. 5. The substrate processing apparatus according to claim 1, wherein, The flow path width in the exhaust path is equal to or less than a distance between an upper surface of the substrate held by the substrate holding unit and the substrate facing surface of the shielding member.
  6. 6. The substrate processing apparatus according to any one of claims 3 to 5, wherein, The flow path width is a distance in a radial direction between the 1 st cylindrical portion and the 2 nd cylindrical portion.
  7. 7. The substrate processing apparatus according to any one of claims 3 to 5, wherein, The substrate processing apparatus further includes an exhaust unit that sucks ambient gas inside the processing cup through the exhaust path, thereby exhausting the ambient gas of the chamber to the outside of the chamber, The exhaust unit exhausts both the ambient gas in the 1 st space and the 2 nd space and the ambient gas in the space outside the processing cup and inside the chamber.
  8. 8. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The inner shroud and the outer shroud are configured to be capable of being lifted and lowered independently of each other.
  9. 9. The substrate processing apparatus according to claim 8, wherein, The exhaust gas flow rate adjusting ring is provided on at least one of the inner shroud and the outer shroud, and adjusts a flow path width of the exhaust path in accordance with a relative movement between the inner shroud and the outer shroud in a vertical direction, thereby changing a pressure loss of the exhaust path.
  10. 10. The substrate processing apparatus according to any one of claims 1 to 5, wherein, The inner peripheral end of the 1 st shroud distal end portion of the inner shroud is positioned horizontally inward of the outer peripheral end of the disk portion.
  11. 11. A substrate processing method is performed by a substrate processing apparatus, The substrate processing apparatus includes: A chamber; a substrate holding unit disposed below a substrate, the substrate holding unit having a base plate smaller than the substrate in a plan view, the substrate being held horizontally on the base plate in the chamber; a shielding member having a disk portion provided with a substrate facing surface facing the upper surface of the substrate held by the substrate holding unit at a distance from the upper surface, and A process bowl having an inner shield and an outer shield, the inner shield having a1 st cylindrical portion surrounding a periphery of the substrate holding unit and a1 st shield tip portion extending from an upper end of the 1 st cylindrical portion toward a plumb line passing through a center portion of the substrate held by the substrate holding unit, an inner peripheral end of the 1 st shield tip portion being directly opposed to a peripheral end surface of the substrate in a horizontal direction with a1 st annular gap therebetween, the outer shield having a2 nd cylindrical portion surrounding the periphery of the 1 st cylindrical portion and a2 nd shield tip portion extending from an upper end of the 2 nd cylindrical portion toward the plumb line and being located above the 1 st shield tip portion, an inner peripheral end of the 2 nd shield tip portion being horizontally opposed to an outer peripheral end of the circular plate portion with a2 nd annular gap therebetween, the process bowl being internally formed with a1 st space divided by the 1 st shield tip portion and the 2 nd shield tip portion and an exhaust path dividing the 1 st space and communicating with the 1 st space; the substrate processing method includes the steps of: A shielding member facing step of arranging the shielding member above the substrate held by the substrate holding unit while keeping a gap between the substrate facing surface and the upper surface of the substrate constant; a shield facing step of forming a1 st space defined by the 1 st shield tip portion and the 2 nd shield tip portion and an exhaust path communicating with the 1 st space in the interior of the processing cup by disposing the inner shield and the outer shield so that the inner peripheral end of the 1 st shield tip portion is directly opposed to the peripheral end surface of the substrate held by the substrate holding means in the horizontal direction with a1 st annular gap therebetween and so that the inner peripheral end of the 2 nd shield tip portion is horizontally opposed to the outer peripheral end of the disk portion of the shielding member with a2 nd annular gap therebetween; A positive pressure maintaining step of supplying an inert gas to a2 nd space formed between the substrate held by the substrate holding unit and the shielding member in parallel with the shielding member facing step and the shield facing step, and maintaining both the 1 st space and the 2 nd space at positive pressure, and And a chemical solution treatment step of supplying a chemical solution to the upper surface of the substrate held by the substrate holding unit, and performing a treatment using the chemical solution on the upper surface of the substrate, in parallel with the shielding member facing step, the shield facing step, and the positive pressure maintaining step.
  12. 12. The substrate processing method according to claim 11, wherein, The positive pressure maintaining step includes a step of supplying an inert gas to the 2 nd space at a flow rate greater than a flow rate of the exhaust gas discharged from the exhaust path.
  13. 13. A substrate processing apparatus comprising: A chamber; a substrate holding unit disposed below a substrate, the substrate holding unit having a base plate smaller than the substrate in a plan view, the substrate being held horizontally on the base plate in the chamber; A shielding member having a circular plate portion provided with a substrate facing surface facing the upper surface of the substrate held by the substrate holding unit with a gap therebetween; A process bowl having an inner shield and an outer shield, the inner shield having a1 st cylindrical portion surrounding a periphery of the substrate holding unit and a1 st shield tip portion extending from an upper end of the 1 st cylindrical portion toward a plumb line passing through a center portion of the substrate held by the substrate holding unit, an inner peripheral end of the 1 st shield tip portion being directly opposed to a peripheral end surface of the substrate in a horizontal direction with a1 st annular gap therebetween, the outer shield having a2 nd cylindrical portion surrounding the periphery of the 1 st cylindrical portion and a2 nd shield tip portion extending from an upper end of the 2 nd cylindrical portion toward the plumb line and being located above the 1 st shield tip portion, an inner peripheral end of the 2 nd shield tip portion being horizontally opposed to an outer peripheral end of the circular plate portion with a2 nd annular gap therebetween, the process bowl being internally formed with a1 st space divided by the 1 st shield tip portion and the 2 nd shield tip portion and an exhaust path dividing the 1 st space and communicating with the 1 st space; An inert gas supply means for supplying an inert gas to a 2 nd space formed between the substrate held by the substrate holding means and the shielding member and communicating with the 1 st space, in a state where an inner peripheral end of the 1 st shield tip portion is directly opposed to a peripheral end face of the substrate in a horizontal direction with a1 st annular gap interposed therebetween and an inner peripheral end of the 2 nd shield tip portion is opposed to an outer peripheral end of the disk portion in a horizontal direction with a 2 nd annular gap interposed therebetween, and And a chemical liquid supply unit that supplies a chemical liquid to an upper surface of the substrate held by the substrate holding unit.

Description

Substrate processing apparatus and substrate processing method Technical Field The present application claims priority based on japanese patent application No. 2019-122134, filed on 6/28 in 2019, the entire contents of which are incorporated herein by reference. The present invention relates to a substrate processing apparatus and a substrate processing method. Examples of the substrate to be processed include a semiconductor wafer, a substrate for a liquid crystal display device, a substrate for an FPD (FLAT PANEL DISPLAY) such as an organic EL (Electroluminescence) display device, a substrate for an optical disk, a substrate for a magnetic disk, a substrate for an magneto-optical disk, a substrate for a photomask, a ceramic substrate, a substrate for a solar cell, and the like. Background In a process for manufacturing a semiconductor device, a single wafer type substrate processing apparatus for processing substrates one by one is sometimes used in order to perform a process using a processing liquid such as a chemical liquid on a surface of a substrate such as a semiconductor wafer. The single wafer substrate processing apparatus includes, for example, a spin chuck (spin chuck) for holding and rotating a substrate substantially horizontally, a nozzle for supplying a processing liquid to the substrate rotated by the spin chuck, a shielding member facing a surface (upper surface) of the substrate held by the spin chuck, a processing cup for capturing the processing liquid discharged from the substrate, and a chamber for accommodating the spin chuck, the shielding member, and the like. In patent document 1, the spin chuck includes, for example, a disk-shaped spin base having an outer diameter larger than an outer diameter of a substrate, and a plurality of holding members provided at appropriate intervals on a circumference corresponding to an outer circumferential shape of the substrate on an outer circumferential portion of an upper surface of the spin base. In patent document 1, the shielding member includes a disk portion disposed above the substrate held by the spin chuck and a cylindrical portion hanging down from the periphery of the disk portion so as to more effectively isolate the upper space from the outer space, which is a space around the upper space above the substrate (a space formed between the substrate and the shielding member). Since the gap formed between the lower end of the cylindrical portion of the shielding member and the outer peripheral edge of the upper surface of the rotating base is kept narrow (see fig. 3 of patent document 1), the entry of the oxygen-containing ambient gas in the outer space into the upper space can be effectively suppressed. This can maintain the upper space in a low oxygen environment. In patent document 1, the treatment cup includes a plurality of shields. A plurality of shields are used for dividing an exhaust and liquid discharge path for exhaust and liquid discharge to pass through. The exhaust gas is discharged by depressurizing the exhaust gas discharge path by driving the exhaust device. The inner peripheral end of each shield surrounds the cylindrical portion of the shielding member, adjacent to the cylindrical portion of the shielding member. Prior art literature Patent literature Patent document 1 Japanese patent No. 6330998 Disclosure of Invention The spin chuck includes a chucking spin chuck for horizontally holding a substrate by horizontally chucking the substrate by a plurality of chucking members disposed around the substrate, and a vacuum spin chuck (so-called vacuum chuck) for horizontally holding the substrate by sucking a lower surface of the substrate. In the chucking type spin chuck, a disk-shaped spin base having an outer diameter larger than an outer diameter of a substrate is used. In contrast, in the vacuum spin chuck, a disk-shaped spin base having an outer diameter smaller than the outer diameter of the substrate is used. In the chucking type spin chuck, the outer peripheral portion of the spin base is disposed outside the peripheral end surface of the substrate. Therefore, in the substrate processing apparatus described in patent document 1, the outer peripheral portion of the spin base is disposed below a gap between the peripheral end surface of the substrate and the cylindrical portion of the shielding member. However, in the vacuum spin chuck, since the outer peripheral portion of the spin base is disposed on the inner side than the peripheral end surface of the substrate, even if a shielding member having a disk portion and a cylindrical portion is used, there is a concern that an oxygen-containing ambient gas passes through a gap between the peripheral end surface of the substrate and the cylindrical portion of the shielding member and enters a space between the upper surface of the substrate and the shielding member (see fig. 12). Accordingly, an object of the present invention is to provide a substrate processing appara