CN-113889511-B - Display device and method of manufacturing the same

Abstract

A display device and a method of manufacturing the same are provided. The display device includes a substrate including a main display area, a component area, and a peripheral area. The component area includes a transmissive area, and the peripheral area is disposed outside the main display area. The display device further includes a main thin film transistor disposed in the main display region, a main organic light emitting diode disposed in the main display region and connected to the main thin film transistor, an auxiliary thin film transistor disposed in the assembly region, an auxiliary organic light emitting diode disposed in the assembly region and connected to the auxiliary thin film transistor, and a lower metal layer disposed between the substrate and the auxiliary thin film transistor in the assembly region and having an undercut structure.

Inventors

• LIU CHUNJI
• JIN HENGXUE

Assignees

• 三星显示有限公司

Dates

Publication Date

20260505

Application Date

20210630

Priority Date

20200701

Claims (20)

1. 1. A display device, the display device comprising: A substrate comprising a main display area, a component area, and a peripheral area, wherein the component area comprises a transmissive area and the peripheral area is disposed outside the main display area; a main thin film transistor disposed in the main display region; A main organic light emitting diode disposed in the main display region and connected to the main thin film transistor; an auxiliary thin film transistor disposed in the component region; an auxiliary organic light emitting diode disposed in the assembly region and connected to the auxiliary thin film transistor, and A lower metal layer disposed between the substrate and the auxiliary thin film transistor in the assembly region, including two layers in direct contact with each other, and having an undercut structure.
2. 2. The display device of claim 1, wherein the lower metal layer comprises a first metal layer having a first thickness in a thickness direction of the display device and a second metal layer having a second thickness in the thickness direction of the display device, Wherein the second thickness is greater than the first thickness.
3. 3. The display device of claim 2, wherein the first thickness is 200 a to 400 a and the second thickness is 2500 a to 3500 a.
4. 4. The display device of claim 2, wherein the lower metal layer includes a first hole corresponding to the transmissive region.
5. 5. The display device of claim 2, wherein the second metal layer has the undercut structure.
6. 6. The display device of claim 2, wherein the first metal layer comprises at least one of Ti, cr, ITO, IZO, znO, in 2 O 3 , IGO, and AZO.
7. 7. The display device of claim 2, wherein the second metal layer comprises Mo.
8. 8. The display device of claim 1, wherein the lower metal layer is disposed directly on an upper surface of the substrate.
9. 9. The display device of claim 1, wherein the lower metal layer and the auxiliary thin film transistor are at least partially stacked on each other.
10. 10. The display device of claim 1, the display device further comprising: and a package substrate disposed over the substrate.
11. 11. The display device of claim 1, the display device further comprising: And a component disposed below the substrate in the component region.
12. 12. The display apparatus of claim 11, wherein the component comprises an imaging device or a sensor.
13. 13. A display device, the display device comprising: A substrate comprising a main display area, a component area, and a peripheral area, wherein the component area comprises a transmissive area and the peripheral area is disposed outside the main display area; a main thin film transistor disposed in the main display region; A main organic light emitting diode disposed in the main display region and connected to the main thin film transistor; an auxiliary thin film transistor disposed in the component region; An auxiliary organic light emitting diode disposed in the assembly region and connected to the auxiliary thin film transistor; A lower metal layer disposed between the substrate and the auxiliary thin film transistor in the assembly region, and A metal layer disposed on the lower metal layer, having an undercut structure, disposed adjacent to the auxiliary thin film transistor in a horizontal direction, and not disposed under the auxiliary thin film transistor in a thickness direction of the display device.
14. 14. The display device of claim 13, the display device further comprising: an auxiliary storage capacitor disposed in the component area, Wherein the auxiliary thin film transistor includes an auxiliary gate electrode, and the auxiliary storage capacitor includes an auxiliary lower electrode and an auxiliary upper electrode.
15. 15. The display device of claim 14, wherein the metal layer comprises a first metal layer and a second metal layer disposed on the first metal layer and having the undercut structure.
16. 16. The display device of claim 15, wherein the metal layer is disposed on the same layer as the auxiliary gate electrode.
17. 17. The display device of claim 15, wherein the metal layer is disposed on the same layer as the auxiliary upper electrode.
18. 18. A method of manufacturing a display device, the method comprising the steps of: Forming a lower metal layer on an upper surface of a substrate, wherein the substrate includes a main display region, a component region, and a peripheral region, wherein the component region includes a transmissive region, and the peripheral region is disposed outside the main display region, wherein the lower metal layer is formed in the component region, and the lower metal layer includes a first metal layer and a second metal layer that are in direct contact with each other; forming a conductive material layer on the substrate in the main display region and on the lower metal layer in the component region; Forming a pixel electrode by removing at least a portion of the conductive material layer and removing the second metal layer from the transmissive region; Forming an organic functional layer, a counter electrode and an upper layer on the entire upper surface of the substrate, wherein the organic functional layer, the counter electrode and the upper layer cover the pixel electrode and the first metal layer, and A lower surface of the substrate opposite to the upper surface of the substrate in the transmission region is irradiated with a laser beam.
19. 19. The method of claim 18, wherein forming a pixel electrode by removing the at least a portion of the conductive material layer and removing the second metal layer from the transmissive region comprises: the at least a portion of the conductive material layer is removed by wet etching and the second metal layer is removed from the transmissive region.
20. 20. The method of claim 19, the method further comprising: an undercut structure is formed in the second metal layer by the wet etch.

Description

Display device and method of manufacturing the same The present application claims priority from korean patent application No. 10-2020-0081067, filed on 1 month 7 in 2020, to the korean intellectual property office, the disclosure of which is incorporated herein by reference in its entirety. Technical Field Exemplary embodiments of the present disclosure relate to a display device and a method of manufacturing the same, and more particularly, to a display device having improved reliability and a method of manufacturing the same. Background Recently, the use of display devices has been diversified. In addition, display devices have become thinner and lighter, and thus, the use of display devices has expanded. As display devices are used for various purposes, there are various methods of designing the shape of the display devices, and the number of functions related to the display devices has increased. Disclosure of Invention Exemplary embodiments of the present disclosure include a display device in which a display area is enlarged so that an image is displayed in an area in which a component as an electronic element is arranged, and a method of manufacturing such a display device. According to an exemplary embodiment of the present disclosure, a display device includes a substrate including a main display area, a component area, and a peripheral area. The component area includes a transmissive area, and the peripheral area is disposed outside the main display area. The display device further includes a main thin film transistor disposed in the main display region, a main organic light emitting diode disposed in the main display region and connected to the main thin film transistor, an auxiliary thin film transistor disposed in the assembly region, an auxiliary organic light emitting diode disposed in the assembly region and connected to the auxiliary thin film transistor, and a lower metal layer disposed between the substrate and the auxiliary thin film transistor in the assembly region and having an undercut structure. In an exemplary embodiment, the lower metal layer includes a first metal layer having a first thickness in a thickness direction of the display device and a second metal layer having a second thickness in the thickness direction of the display device. The second thickness is greater than the first thickness. In an exemplary embodiment, the first thickness is aboutTo aboutAnd a second thickness of aboutTo about In an exemplary embodiment, the lower metal layer includes a first hole corresponding to the transmissive region. In an exemplary embodiment, the second metal layer has an undercut structure. In an exemplary embodiment, the first metal layer includes at least one of Ti, cr, ITO, IZO, znO, in 2O3, IGO, and AZO. In an exemplary embodiment, the second metal layer includes Mo. In an exemplary embodiment, the lower metal layer is disposed directly on the upper surface of the substrate. In an exemplary embodiment, the lower metal layer and the auxiliary thin film transistor are at least partially overlapped with each other. In an exemplary embodiment, the display device further includes a package substrate disposed over the substrate. In an exemplary embodiment, the display apparatus further includes a component disposed under the substrate in the component area. In an exemplary embodiment, the assembly includes an imaging device or sensor. According to an exemplary embodiment of the present disclosure, a display device includes a substrate including a main display area, a component area, and a peripheral area. The component area includes a transmissive area, and the peripheral area is disposed outside the main display area. The display device further includes a main thin film transistor disposed in the main display region, a main organic light emitting diode disposed in the main display region and connected to the main thin film transistor, an auxiliary thin film transistor disposed in the component region, an auxiliary organic light emitting diode disposed in the component region and connected to the auxiliary thin film transistor, a lower metal layer disposed between the substrate and the auxiliary thin film transistor in the component region, and a metal layer disposed on the lower metal layer and having an undercut structure. In an exemplary embodiment, the display device further includes an auxiliary storage capacitor disposed in the component area. The auxiliary thin film transistor includes an auxiliary gate electrode, and the auxiliary storage capacitor includes an auxiliary lower electrode and an auxiliary upper electrode. In an exemplary embodiment, the metal layers include a first metal layer and a second metal layer disposed on the first metal layer and having an undercut structure. In an exemplary embodiment, the metal layer is disposed on the same layer as the auxiliary gate electrode. In an exemplary embodiment, the metal layer is disposed on the same layer as the auxiliary