CN-114242889-B - Memristor and manufacturing method thereof

CN114242889BCN 114242889 BCN114242889 BCN 114242889BCN-114242889-B

Abstract

The invention provides a memristor and a manufacturing method thereof, comprising a substrate, a lower electrode which is positioned on the substrate and made of TiN, wherein the ratio of an N component to a Ti component of the lower electrode is 0.96-1.1, the lower electrode comprises an endpoint value, a resistance change layer which is positioned on one side of the lower electrode, which is away from the substrate, and an upper electrode which is positioned on one side of the resistance change layer, which is away from the substrate. From the above, the technical scheme provided by the invention can optimize the resistivity and the thermal conductivity of the lower electrode by adjusting the component ratio of Ti and N in the lower electrode of the memristor to be 0.96-1.1, so that the memristor forms a self-heating effect in the programming process. Furthermore, the thermal electric coupling effect is adopted, the defect formation energy of the resistance change layer is reduced through the assistance of a thermal field of the lower electrode, the defect formation probability is improved, the electric field intensity required in the programming process is reduced, the purpose of reducing the programming voltage is achieved, and therefore the reliability of the memristor is improved.

Inventors

XU XIAOXIN
Lai Jinru
SUN WENXUAN
YU JIE
DONG DANIAN
LV HANGBING

Assignees

中国科学院微电子研究所

Dates

Publication Date: 20260508
Application Date: 20211213

Claims (8)

1. A memristor, which comprises a first electrode and a second electrode, characterized by comprising the following steps: A substrate; The lower electrode is positioned on the substrate and made of TiN, wherein the ratio of the N component to the Ti component of the lower electrode is 0.96-1.1, and the lower electrode comprises end points; forming a lower electrode made of TiN on the substrate, wherein the lower electrode is formed on the substrate, and N gas and Ar gas are introduced, wherein the flow rate range of the N gas and the Ar gas is 8sccm to 50 sccm to 8sccm to 35 sccm, and the end point values are included; The resistive layer is positioned at one side of the lower electrode away from the substrate; the upper electrode is positioned on one side of the resistive layer, which is away from the substrate; the resistivity of the lower electrode is 250-350uΩ & cm, including the endpoint value; and the thermal conductivity of the lower electrode is 55-70W/m DEG C, so that the memristor forms a self-heating effect in the programming process.
2. The memristor of claim 1, wherein the lower electrode has a thickness in the range of 20-500nm, inclusive; and the thickness of the upper electrode ranges from 20 nm to 500nm, including the end point value.
3. The memristor of claim 1, wherein the upper electrode is Ir, al, ru, pd, tiN or TaN.
4. The memristor of claim 1, wherein the resistive layer is a binary metal oxide.
5. The memristor of claim 4, wherein the binary metal oxide is HfO x 、Ta 2 O 5 、Al 2 O 3 、WO x 、TiO x or CuO.
6. The memristor of claim 1, further comprising an interposer between the resistive layer and the upper electrode, the interposer being a metal layer or a semiconductor layer.
7. The memristor of claim 1, wherein the memristor is a resistive-switching memory.
8. A method of manufacturing a memristor, characterized in that the method of manufacturing a memristor is used to manufacture a memristor as claimed in any one of claims 1-7, comprising: Providing a substrate; forming a lower electrode made of TiN on the substrate, wherein the ratio of N component to Ti component of the lower electrode is 0.96-1.1, inclusive, the resistivity of the lower electrode is 250-350uΩ & cm, inclusive, and the thermal conductivity of the lower electrode is 55-70W/mDEG C Forming a resistive layer on one side of the lower electrode away from the substrate; and forming an upper electrode on one side of the resistive layer, which is away from the substrate.

Description

Memristor and manufacturing method thereof Technical Field The invention relates to the technical field of semiconductor devices, in particular to a memristor and a manufacturing method thereof. Background The resistive random access memory is a novel nonvolatile memory technology, has a simple metal-insulating layer-metal sandwich structure, is completely compatible with the traditional CMOS (Complementary Metal-Oxide-Semiconductor) back-end process, has lower working voltage and good reliability. The method has important application prospect in embedded storage, logic circuits and nerve morphology calculation. Under the excitation of an external electric field, the formation and fracture process of the conductive filaments can occur in the dielectric layer of the resistive random access memory, and the resistance value of the conductive filaments is circularly switched between a high-resistance state and a low-resistance state. The first conductive filament formation process in a resistive random access memory, known as the forming process, generally requires a relatively high voltage Vforming. Some devices may operate individually Vforming V up to 3.5V or even higher and Vforming V in the array may reach 4.5V. This is not matched with the highest voltage that can be provided by the commonly used CMOS process node at this stage, for example, the operating voltage of the MOS transistor is 1.8V at most in the 28nm process, and lower in the more advanced process. It is therefore necessary in practical circuits to provide a plurality of voltages to meet the operating requirements of different devices, thereby increasing the complexity of the circuit. In other words, the operation voltage of the resistive random access memory, especially the voltage Vforming is too large, which causes problems in compatibility and uniformity of the operation voltage, and affects practical application of the resistive random access memory, and is also unfavorable for improving reliability of the resistive random access memory. Disclosure of Invention In view of the above, the invention provides a memristor and a manufacturing method thereof, which effectively solve the technical problems existing in the prior art, achieve the purpose of reducing programming voltage, and further improve the reliability of the memristor. In order to achieve the above purpose, the technical scheme provided by the invention is as follows: a memristor, comprising: A substrate; The lower electrode is positioned on the substrate and made of TiN, wherein the ratio of the N component to the Ti component of the lower electrode is 0.96-1.1, and the lower electrode comprises end points; The resistive layer is positioned at one side of the lower electrode away from the substrate; and the upper electrode is positioned on one side of the resistive layer, which is away from the substrate. Optionally, the resistivity of the lower electrode is 250-350uΩ·cm, inclusive; And the thermal conductivity of the lower electrode is 55-70W/m DEG C. Optionally, the thickness of the lower electrode ranges from 20 nm to 500nm, including the end point value; and the thickness of the upper electrode ranges from 20 nm to 500nm, including the end point value. Optionally, the material of the upper electrode is Ir, al, ru, pd, tiN or TaN. Optionally, the material of the resistive layer is binary metal oxide. Optionally, the binary metal oxide is HfO x、Ta2O5、Al2O3、WOx、TiOx or CuO. Optionally, the memristor further includes an interposed layer between the resistive layer and the upper electrode, where the interposed layer is a metal layer or a semiconductor layer. Optionally, the memristor is a resistive random access memory. Correspondingly, the invention also provides a preparation method of the memristor, which comprises the following steps: Providing a substrate; Forming a lower electrode made of TiN on the substrate, wherein the ratio of the N component to the Ti component of the lower electrode is 0.96-1.1, including the endpoint value; forming a resistive layer on one side of the lower electrode away from the substrate; and forming an upper electrode on one side of the resistive layer, which is away from the substrate. Optionally, forming a bottom electrode made of TiN on the substrate includes: And when the lower electrode is formed on the substrate, introducing N gas and Ar gas, wherein the flow rate of the N gas and the Ar gas ranges from 8sccm to 50 sccm to 8sccm to 35 sccm, and the end point values are included. Compared with the prior art, the technical scheme provided by the invention has at least the following advantages: The invention provides a memristor and a manufacturing method thereof, comprising a substrate, a lower electrode which is positioned on the substrate and made of TiN, wherein the ratio of an N component to a Ti component of the lower electrode is 0.96-1.1, the lower electrode comprises an endpoint value, a resistance change layer which is positioned o