CN-114244337-B - Hybrid gate drive circuit

CN114244337BCN 114244337 BCN114244337 BCN 114244337BCN-114244337-B

Abstract

A hybrid gate drive circuit comprises a power supply circuit, an on-off circuit, a signal input circuit and a MOSFET device, wherein the on-off circuit is connected with the MOSFET device and can receive an on signal and an off signal, the MOSFET device is turned on in a voltage source driving mode according to the on signal, the MOSFET device is turned off in a current source driving mode according to the off signal, the signal input circuit is connected with the on-off circuit, and the power supply circuit supplies power to the MOSFET device, the on-off circuit and the signal input circuit. The on-off circuit can receive the on signal and the off signal, turn on the MOSFET device in a voltage source driving mode according to the on signal, turn off the MOSFET device in a current source driving mode according to the off signal, enable the MOSFET device to be normally used at a higher temperature, reduce the on-off loss of the MOSFET, enable the switching loss to be possibly reduced to the lowest, and improve the efficiency and the reliability of the MOSFET.

Inventors

DING XIAOFENG
SONG XINRONG
CUI HUIFENG

Assignees

北京航空航天大学
北京航空航天大学宁波创新研究院

Dates

Publication Date: 20260512
Application Date: 20211217

Claims (8)

1. A hybrid gate drive circuit, comprising: a MOSFET device as an actuator for turning on or off an external circuit; The switching-on and switching-off circuit is connected with the MOSFET device and can receive a switching-on signal and a switching-off signal, the MOSFET device is switched on in a voltage source driving mode according to the switching-on signal, and the MOSFET device is switched off in a current source driving mode according to the switching-off signal; the signal input circuit is connected with the on-off circuit and can send the on signal or the off signal to the on-off circuit; a power supply circuit for supplying power to the MOSFET device, the on-off circuit and the signal input circuit; The on-off circuit includes: the signal input circuit is connected with the MOSFET device through the opening circuit, and the opening circuit can receive the opening signal and open the MOSFET device in a voltage source driving mode according to the opening signal; The signal input circuit is connected with the MOSFET device through the turn-off circuit, and the turn-off circuit can receive the turn-off signal and turn off the MOSFET device in a current source driving mode according to the turn-off signal; the turn-on circuit comprises a fourth triode, a sixth triode and a twelfth resistor; The base of the fourth triode is connected with the output end of the signal input circuit, the emitter of the fourth triode is connected with the base of the sixth triode, the collector of the fourth triode and the collector of the sixth triode are connected with the power supply circuit, and the emitter of the sixth triode is connected with the grid electrode of the MOSFET device through the twelfth resistor.
2. The hybrid gate drive circuit of claim 1 wherein the shutdown circuit comprises a fifth transistor and a plurality of field effect transistor circuits connected in parallel; Each field effect transistor circuit comprises a protection resistor and a field effect transistor; The base electrode of the fifth triode is connected with the output end of the signal input circuit, the collector electrode of the fifth triode is grounded, the emitter electrode of the fifth triode is connected with the source stage of the field effect tube through the protection resistor, the emitter electrode of the fifth triode is also connected with the grid electrode of the field effect tube, and the drain electrode of the field effect tube is connected with the grid electrode of the MOSFET device.
3. The hybrid gate drive circuit of claim 1, wherein the power supply circuit comprises a first resistor, a first diode, a second diode, a power supply VCC, a first power supply terminal and a second power supply terminal; The power supply VCC is respectively connected with the on-off circuit and the signal input circuit after passing through the first power supply end; the power supply VCC sequentially passes through the first resistor, the first diode and the second power supply end and is respectively connected with the signal input circuit and the MOSFET device; The second power supply end is also grounded through the second diode.
4. The hybrid gate drive circuit of claim 3, wherein the signal input circuit comprises: A transmitting-side circuit capable of converting an analog signal for control into a digital signal; the receiving end circuit is connected with the transmitting end circuit and can receive the digital signal and restore the digital signal into the control analog signal; and the amplifying circuit is connected with the receiving end circuit and used for converting the control analog signal restored by the receiving end circuit into the on signal or the off signal.
5. The hybrid gate drive circuit of claim 4, wherein the amplifying circuit comprises an eleventh resistor and a third transistor; the first power supply end of the power supply circuit is connected with one end of the eleventh resistor; The collector of the third triode is connected with the other end of the eleventh resistor and the on-off circuit, the base of the third triode is electrically connected with the receiving end circuit, and the emitter of the third triode is grounded.
6. The hybrid gate drive circuit of claim 4, wherein the transmitting side circuit comprises a PWM signal generator, a second resistor, a third resistor, and a first transformer; One end of the PWM signal generator is grounded, the other end of the PWM signal generator is connected with one end of the primary winding of the first transformer after passing through the second resistor, the other end of the primary winding of the first transformer is grounded after passing through the third resistor, One end and the other end of the secondary winding of the first transformer are connected with a receiving end circuit.
7. The hybrid gate drive circuit of claim 4, wherein the receiver circuit comprises a fourth resistor, a fifth resistor, a sixth resistor, a seventh resistor, an eighth resistor, a ninth resistor, a tenth resistor, a third diode, a fourth diode, a fifth diode, a first triode, and a second triode; One output end of the signal input circuit is respectively connected with one end of the fourth resistor and the anode of the third diode, and the other output end of the signal input circuit is respectively connected with one end of the fifth resistor and the anode of the fourth diode; the base electrode of the first triode is respectively connected with one end of the seventh resistor and the negative electrode of the third diode, and the collector electrode of the first triode is respectively connected with one end of the sixth resistor and one end of the eighth resistor; The base electrode of the second triode is respectively connected with the other end of the sixth resistor and the negative electrode of the fourth diode, the collector electrode of the second triode is respectively connected with the other end of the seventh resistor, one end of the ninth resistor and one end of the tenth resistor, The emitter of the first triode, the emitter of the second triode, the other end of the fourth resistor and the other end of the fifth resistor are all grounded; the second power supply end is connected with the other end of the eighth resistor and the other end of the ninth resistor through the fifth diode respectively; the other end of the tenth resistor is connected with the amplifying circuit.
8. The hybrid gate drive circuit of claim 7, wherein the receiver circuit further comprises a first capacitor, a second capacitor, and a third capacitor; The negative electrode of the fifth diode is grounded through the first capacitor, the second power supply end is grounded through the second capacitor, and the first power supply end is connected with the second power supply end through the third capacitor.

Description

Hybrid gate drive circuit Technical Field The disclosure belongs to the technical field of power electronics, and particularly relates to a hybrid gate drive circuit. Background The silicon carbide power device driving integrated chip applies silicon-based MOSFET (metal-oxide semiconductor field effect transistor), and detection and protection circuits are designed for unsafe working conditions such as overvoltage, low voltage, overcurrent and the like, and the switching frequency of the driving chips can reach hundreds of kHz, so that the requirement of the SiC MOSFET on high-frequency work can be met. However, the operating temperature of the integrated chips cannot exceed 150 ℃, and under the working condition of higher than 150 ℃, the switching characteristics of components in the chips can be seriously affected, and the performance requirements at high temperature cannot be met. If the SiC MOSFET is driven using an integrated chip at high temperatures, the application of the SiC MOSFET in high temperature environments will be limited due to driving problems. In addition, no silicon carbide-based integrated chip with excellent performance is available in the market at present, and the chip under the high-temperature environment mainly uses the silicon-on-insulator technology, but the price of the chip is very expensive and is several times of that of a silicon carbide power device, so that the cost of a driving circuit is greatly increased, and therefore, the high-temperature driving condition of the silicon carbide power device needs to be improved. Disclosure of Invention In order to solve at least one of the above technical problems, an object of the present disclosure is to provide a hybrid gate driving circuit capable of avoiding adverse effects caused by high temperature of an integrated chip, turning on a process voltage drive, turning off a process current drive, reducing switching loss more and faster along with temperature rise, and improving efficiency and reliability of a MOSFET. In order to achieve the purpose of the disclosure, the technical scheme adopted by the disclosure is as follows: a hybrid gate drive circuit comprising: a MOSFET device as an actuator for turning on or off an external circuit; The switching-on and switching-off circuit is connected with the MOSFET device and can receive a switching-on signal and a switching-off signal, the MOSFET device is switched on in a voltage source driving mode according to the switching-on signal, and the MOSFET device is switched off in a current source driving mode according to the switching-off signal; the signal input circuit is connected with the on-off circuit and can send the on signal or the off signal to the on-off circuit; And the power supply circuit is used for supplying power to the MOSFET device, the on-off circuit and the signal input circuit. Optionally, the on-off circuit includes: the signal input circuit is connected with the MOSFET device through the opening circuit, and the opening circuit can receive the opening signal and open the MOSFET device in a voltage source driving mode according to the opening signal; And the signal input circuit is connected with the MOSFET device through the turn-off circuit, and the turn-off circuit can receive the turn-off signal and turn off the MOSFET device in a current source driving mode according to the turn-off signal. Optionally, the turn-on circuit includes a fourth triode, a sixth triode and a twelfth resistor; The base of the fourth triode is connected with the output end of the signal input circuit, the emitter of the fourth triode is connected with the base of the sixth triode, the collector of the fourth triode and the collector of the sixth triode are connected with the power supply circuit, and the emitter of the sixth triode is connected with the grid electrode of the MOSFET device through the twelfth resistor. Optionally, the turn-off circuit includes a fifth triode and a plurality of field effect transistor circuits connected in parallel; Each field effect transistor circuit comprises a protection resistor and a field effect transistor; The base electrode of the fifth triode is connected with the output end of the signal input circuit, the collector electrode of the fifth triode is grounded, the emitter electrode of the fifth triode is connected with the source stage of the field effect tube through the protection resistor, the emitter electrode of the fifth triode is also connected with the grid electrode of the field effect tube, and the drain electrode of the field effect tube is connected with the grid electrode of the MOSFET device. Optionally, the power supply circuit includes a first resistor, a first diode, a second diode, a power source VCC, a first power supply terminal, and a second power supply terminal; The power supply VCC is respectively connected with the on-off circuit and the signal input circuit after passing through the first power supply end; the power