CN-114342046-B - Substrate processing method, semiconductor device manufacturing method, recording medium, and substrate processing apparatus

Abstract

The present invention enables the formation of a film having film continuity. The method comprises a step of preparing a substrate having a metal-containing film formed on the surface thereof, and a step of thinning the metal-containing film by supplying a halogen-containing gas to the substrate in a pulse manner.

Inventors

• OGAWA ARITO
• MIZUNO NORIKAZU
• Ashikagatani Atsuhiko
• Kiyoshino Atsushiro
• Gao Hekangtai

Assignees

• 株式会社国际电气

Dates

Publication Date

20260505

Application Date

20190919

Claims (13)

1. 1. A substrate processing method includes: A step of preparing a substrate having a continuous metal nitride film formed on the surface, and A step of thinning the metal nitride film by supplying a gas containing a metal and a halogen to the metal nitride film in a pulse manner without supplying an oxygen-containing gas to the metal nitride film, The metal and halogen containing gas contains tungsten hexafluoride.
2. 2. The method of claim 1, wherein, Before the step of thinning the metal nitride film, the method comprises the following steps: And forming a metal nitride film on the substrate by supplying a gas containing a metal and a halogen and a nitrogen-containing gas a predetermined number of times or by supplying a gas containing a metal and a halogen, a silane-based gas and a nitrogen-containing gas a predetermined number of times.
3. 3. The method according to claim 1, further comprising a step of forming the metal nitride film on the substrate on which the insulating film is formed.
4. 4. A method according to claim 3, wherein the metal nitride film is deposited by The following thickness is formed in an island shape when formed on the insulating film.
5. 5. The method according to claim 3, wherein the metal nitride film is formed to a thickness that can achieve film continuity when the metal nitride film is formed on the substrate on which the insulating film is formed.
6. 6. The method according to claim 4, wherein the metal nitride film is formed to a thickness that can achieve film continuity when the metal nitride film is formed on the substrate on which the insulating film is formed.
7. 7. The method of claim 1, wherein the metal nitride film is not subjected to an oxidation treatment.
8. 8. The method of claim 1, wherein the metal nitride film does not contain oxygen.
9. 9. The method of claim 1, wherein the metal nitride film is a titanium nitride film.
10. 10. The method of claim 9, wherein TiWFx generated by pulsing the metal and halogen containing gas to the metal nitride film during the thinning is removed.
11. 11. A method for manufacturing a semiconductor device includes: A step of preparing a substrate having a continuous metal nitride film formed on the surface, and A step of thinning the metal nitride film by supplying a gas containing a metal and a halogen to the metal nitride film in a pulse manner without supplying an oxygen-containing gas to the metal nitride film, The metal and halogen containing gas contains tungsten hexafluoride.
12. 12. A computer-readable recording medium having recorded thereon a program for causing a substrate processing apparatus to execute the following process by a computer: process for preparing substrate having surface formed with continuous metal nitride film, and And a process of thinning the metal nitride film by pulse-supplying a gas containing tungsten hexafluoride as a gas containing a metal and a halogen to the metal nitride film without supplying an oxygen-containing gas to the metal nitride film.
13. 13. A substrate processing apparatus includes: A gas supply system for supplying a gas to a substrate, and A control unit configured to control the gas supply system so as to supply a gas containing a metal and a halogen to the metal nitride film without supplying an oxygen-containing gas to the metal nitride film having continuity, thereby thinning the metal nitride film, The metal and halogen containing gas contains tungsten hexafluoride.

Description

Substrate processing method, semiconductor device manufacturing method, recording medium, and substrate processing apparatus Technical Field The present disclosure relates to a substrate processing method, a method of manufacturing a semiconductor device, a recording medium, and a substrate processing apparatus. Background For example, a tungsten (W) film is used for a control gate of a NAND flash memory having a 3-dimensional structure, and a tungsten hexafluoride (WF 6) gas containing W is used for forming the W film. In addition, a barrier film such as a titanium nitride (TiN) film is provided between the W film and the insulating film (for example, refer to patent document 1). The TiN film plays a role of improving adhesion between the W film and the insulating film and also plays a role of preventing fluorine (F) contained in the W film from diffusing into the insulating film, and is preferably a thin film from the viewpoint of reducing wiring resistance. Prior art literature Patent literature Patent document 1 Japanese patent application laid-open No. 2011-66263 Disclosure of Invention Problems to be solved by the invention But if formed on the insulating filmIn the following films, the TiN film is formed into islands, and adhesion to the W film is deteriorated. Further, F contained in the W film diffuses into the insulating film through a portion where the TiN film is not formed. An object of the present disclosure is to provide a technique capable of forming a film having film continuity. Means for solving the problems According to one embodiment of the present disclosure, there is provided a technique including a step of preparing a substrate having a metal-containing film formed on a surface thereof, and a step of pulse-supplying a halogen-containing gas to the substrate to thin the metal-containing film. Effects of the invention According to the present disclosure, a film having film continuity can be formed. Drawings Fig. 1 is a schematic vertical sectional view showing a vertical processing furnace of a substrate processing apparatus according to an embodiment of the present disclosure. FIG. 2 is a schematic cross-sectional view taken along line A-A of FIG. 1. Fig. 3 is a schematic configuration diagram of a controller of the substrate processing apparatus according to an embodiment of the present disclosure, and is a diagram showing a control system of the controller in a block diagram. Fig. 4 is a diagram showing a film formation flow in one embodiment of the present disclosure. In FIG. 5, (A) shows that the film forming step of the film forming process is performed on the substrateIn the TiN film of (a), the film forming step and the thinning step of the film forming process are shown in the drawings, (B) and (C) to form on the substrateSchematic diagram of TiN film. Fig. 6 is a diagram showing a modification of the film forming process in the film forming flow according to one embodiment of the present disclosure. Fig. 7 is a diagram showing a modification of the thinning process in the film forming flow according to one embodiment of the present disclosure. Fig. 8 is a diagram showing a modification of the thinning process in the film forming process according to one embodiment of the present disclosure. Fig. 9 (a) and (B) are schematic vertical sectional views showing a processing furnace of a substrate processing apparatus according to another embodiment of the present disclosure. Detailed Description Hereinafter, description will be made with reference to fig. 1 to 4. (1) Structure of substrate processing apparatus The substrate processing apparatus 10 includes a processing furnace 202 provided with a heater 207 as a heating unit (heating mechanism, heating system). The heater 207 is cylindrical and vertically mounted by being supported by a heater base (not shown) serving as a holding plate. An outer tube 203 constituting a reaction vessel (process vessel) is disposed inside the heater 207 concentrically with the heater 207. The outer tube 203 is made of a heat-resistant material such as quartz (SiO 2) or silicon carbide (SiC), and has a cylindrical shape with an upper end closed and a lower end opened. A header (inlet flange) 209 is disposed concentrically with the outer tube 203 below the outer tube 203. The manifold 209 is formed of a metal such as stainless steel (SUS) and has a cylindrical shape with upper and lower ends open. An O-ring 220a as a sealing member is provided between the upper end of manifold 209 and outer tube 203. Manifold 209 is supported by the heater base so that outer tube 203 is in a vertically mounted condition. Inside the outer tube 203, an inner tube 204 constituting a reaction vessel is disposed. The inner tube 204 is made of a heat-resistant material such as quartz (SiO 2) or SiC, and has a cylindrical shape with an upper end closed and a lower end opened. The process vessel (reaction vessel) is mainly composed of an outer tube 203, an inner tube 204, and