CN-114497343-B - Weak light spectrum measuring device and spectrometer
Abstract
The invention belongs to the field of spectrum equipment, and provides a weak light spectrum measuring device and a spectrometer, which comprises a substrate and at least two detection units arranged on the upper surface of the substrate, A detection unit comprises a light modulation micro-nano structure unit and a superconducting nanowire single photon detector unit. The light modulation micro-nano structure unit can realize a certain modulation effect on the incident light spectrum, the superconductive nanowire single photon detector unit is used for detecting the modulated photons, or the light modulation micro-nano structure unit is also used as a light modulation structure to jointly generate the spectrum modulation effect on the photons and detect the photons, so that each detection unit has a broad spectrum detection characteristic, a spectrum can be measured by using a method of calculating spectrum reconstruction, and the photon utilization rate is greatly improved. The resonance effect of the optical modulation micro-nano structure also has the effect of enhancing the detection efficiency of the superconducting nanowire single photon detector, and shortens the measurement time.
Inventors
- ZHANG WEI
- ZHENG JINGYUAN
- FENG XUE
- LIU FANG
- CUI KAIYU
- HUANG YIDONG
Assignees
- 清华大学
Dates
- Publication Date
- 20260508
- Application Date
- 20211222
Claims (7)
- 1. A weak light spectrum measuring device comprising a substrate and at least two detection units arranged on an upper surface of the substrate, wherein each detection unit comprises: the light modulation micro-nano structure unit comprises a bottom plate and a plurality of modulation holes arranged on the bottom plate, wherein the plurality of modulation holes are arranged into a two-dimensional graph structure; The superconducting nanowire single photon detector unit comprises at least one superconducting nanowire, wherein the superconducting nanowire is arranged into a two-dimensional graph structure, and the longitudinal projection of the superconducting nanowire is inserted among a plurality of modulation holes; The detection units comprise at least two modulation holes with structural parameters, and/or comprise at least two modulation hole arrangement forms with two-dimensional graph structures, and/or at least two superconductive nanowire arrangement forms with two-dimensional graph structures; the bottom plate is positioned on the upper surface of the substrate, and the superconducting nanowire single photon detector unit is arranged on the upper surface of the bottom plate; A buffer layer is arranged between the bottom plate and the superconducting nanowire single photon detector unit, one of the bottom plate and the superconducting nanowire single photon detector unit is positioned on the lower surface of the buffer layer, and the other is positioned on the upper surface of the buffer layer.
- 2. The weak light spectrum measurement device according to claim 1, wherein when the bottom plate is located on the lower surface of the buffer layer, the bottom of the buffer layer fills the modulation hole.
- 3. The weak light spectrum measurement device according to claim 1, wherein when the superconducting nanowire single photon detector unit is located on a lower surface of the buffer layer, a bottom of the buffer layer fills a gap between the superconducting nanowires.
- 4. A weak light spectrum measurement device according to any one of claims 1 to 3, wherein the material of the buffer layer is a low refractive index material.
- 5. The weak light spectrum measurement device according to claim 1, wherein the material of the bottom plate comprises silicon, germanium, a germanium-silicon material, a silicon compound, a germanium compound, a metal or a group III-V material, wherein the silicon compound comprises silicon nitride, silicon dioxide or silicon carbide.
- 6. The weak light spectrum measurement device according to claim 1, wherein the superconducting nanowire comprises niobium nitride, niobium titanium nitride, tungsten silicon, molybdenum silicon, or magnesium diboride.
- 7. A spectrometer comprising a weak light spectrum measurement device according to any one of claims 1 to 6.
Description
Weak light spectrum measuring device and spectrometer Technical Field The invention relates to the technical field of spectrum equipment, in particular to a weak light spectrum measuring device and a spectrometer. Background As a commonly used optical information sensing technology, spectral measurement has been widely used in various technical fields through years of development. The single photon level weak light spectrum measurement has important application in the fields of scientific research, environmental monitoring, remote sensing and telemetry, etc. However, the current method for measuring the spectrum of weak light generally relies on a tunable narrow-band filter, such as a monochromator, in combination with a single photon detector, and measures photon count rates corresponding to each wavelength point by point scanning different wavelength points to realize spectrum measurement. In the measuring process, photons outside the pass band of the filter cannot be detected, so that the photon utilization rate of the method is low, the measuring time is long, the function integration of devices is not easy to realize, and the practical application of the technology is severely limited. Disclosure of Invention The invention provides a weak light spectrum measuring device and a spectrometer, which are used for solving the defects of low photon utilization and long measurement time when a tunable narrow-band filter is matched with a single photon detector to carry out weak light spectrum measurement in the prior art, and realizing the effects of improving photon utilization rate and shortening measurement time. The invention provides a weak light spectrum measuring device which comprises a substrate and at least two detection units arranged on the upper surface of the substrate, wherein each detection unit comprises a light modulation micro-nano structure unit, a super-conductor nanowire single photon detector unit and a super-conductor nanowire single photon detector unit, the light modulation micro-nano structure unit comprises a bottom plate and a plurality of modulation holes arranged on the bottom plate, the modulation holes are arranged into a two-dimensional graph structure, the super-conductor nanowire single photon detector unit comprises at least one super-conductor nanowire, the super-conductor nanowire is arranged into the two-dimensional graph structure, and longitudinal projections of the super-conductor nanowire are inserted among the modulation holes. According to the weak light spectrum measuring device provided by the invention, the plurality of detection units comprise the modulation holes of at least two structural parameters, and/or comprise the modulation hole arrangement form of at least two-dimensional graph structures, and/or comprise the superconducting nanowire arrangement form of at least two-dimensional graph structures. According to the weak light spectrum measuring device provided by the invention, the bottom plate is positioned on the upper surface of the substrate, and the superconducting nanowire single photon detector unit is arranged on the upper surface of the bottom plate. According to the weak light spectrum measuring device provided by the invention, the buffer layer is arranged between the bottom plate and the superconducting nanowire single photon detector unit, one of the bottom plate and the superconducting nanowire single photon detector unit is positioned on the lower surface of the buffer layer, and the other is positioned on the upper surface of the buffer layer. According to the weak light spectrum measuring device provided by the invention, when the bottom plate is positioned on the lower surface of the buffer layer, the bottom of the buffer layer is filled with the modulation hole. According to the weak light spectrum measuring device provided by the invention, when the superconducting nanowire single photon detector unit is positioned on the lower surface of the buffer layer, the bottom of the buffer layer is filled with gaps among the superconducting nanowires. According to the weak light spectrum measuring device provided by the invention, the material of the buffer layer is a low refractive index material. According to the weak light spectrum measuring device provided by the invention, the material of the bottom plate comprises silicon, germanium, a germanium-silicon material, a silicon compound, a germanium compound, metal or III-V group material, wherein the silicon compound comprises silicon nitride, silicon dioxide or silicon carbide. According to the weak light spectrum measuring device provided by the invention, the superconducting nanowire is made of niobium nitride, niobium titanium nitride, tungsten silicon, molybdenum silicon or magnesium diboride. The invention also provides a spectrometer comprising a weak light spectrum measurement device as described in any one of the preceding claims. The invention provides a weak light spectrum measuri