CN-114499168-B - Multiphase boost conversion device

CN114499168BCN 114499168 BCN114499168 BCN 114499168BCN-114499168-B

Abstract

The multiphase boost converter comprises a multiphase boost converter and a passive lossless snubber, wherein the passive lossless snubber comprises a first resonant capacitor, a second resonant capacitor, an output end first unidirectional conduction element, an output end second unidirectional conduction element, an input end first unidirectional conduction element, an input end second unidirectional conduction element and a resonant inductor. The invention has the effects of reducing the switching loss of the multiphase boost converter and reducing the electromagnetic interference by utilizing the buffer with a simple structure.

Inventors

HONG ZONGLIANG

Assignees

亚瑞源科技（深圳）有限公司
亚荣源科技（深圳）有限公司
深圳市盛能杰科技有限公司

Dates

Publication Date: 20260505
Application Date: 20211228

Claims (9)

1. The utility model provides a heterogeneous boost conversion device which characterized in that: It comprises: multiphase boost converter A passive lossless snubber electrically connected to the multi-phase boost converter, Wherein the passive lossless snubber comprises: a first resonant capacitor electrically connected to the multiphase boost converter; a second resonant capacitor electrically connected to the multiphase boost converter; The output end is a first unidirectional conduction element which is electrically connected to the multiphase boost converter and the first resonant capacitor; The output end is electrically connected to the multiphase boost converter and the second resonance capacitor; the input end first unidirectional conduction element is electrically connected to the first resonant capacitor and the output end first unidirectional conduction element; A second unidirectional conductive element at the input end and electrically connected to the second resonant capacitor and the second unidirectional conductive element at the output end, and The resonant inductor is electrically connected to the multiphase boost converter, the first unidirectional conduction element at the input end and the second unidirectional conduction element at the input end; the multiphase boost converter includes: a first transistor switch electrically connected to the first resonant capacitor; a second transistor switch electrically connected to the second resonant capacitor, and A switch controller electrically connected to the first transistor switch and the second transistor switch, Wherein when the switch controller is configured to transmit a pulse width modulation signal to the first transistor switch to drive the first transistor switch and the duty cycle of the pulse width modulation signal is less than 50%, or when the switch controller is configured to transmit the pulse width modulation signal to the second transistor switch to drive the second transistor switch and the duty cycle of the pulse width modulation signal is less than 50%, the multiphase boost conversion device is configured to sequentially operate in a half-type first operation phase, a half-type second operation phase, a half-type third operation phase, a half-type fourth operation phase, a half-type fifth operation phase, a half-type sixth operation phase, a half-type seventh operation phase and a half-type eighth operation phase; Wherein when the switch controller is configured to transmit the pulse width modulation signal to the first transistor switch to drive the first transistor switch and the duty cycle of the pulse width modulation signal is greater than or equal to 50%, or when the switch controller is configured to transmit the pulse width modulation signal to the second transistor switch to drive the second transistor switch and the duty cycle of the pulse width modulation signal is greater than or equal to 50%, the multiphase boost conversion device is configured to sequentially operate in an all first operation phase, an all second operation phase, an all third operation phase, an all fourth operation phase, an all fifth operation phase, an all sixth operation phase, an all seventh operation phase, and an all eighth operation phase.
2. The multi-phase boost converter of claim 1, wherein when the multi-phase boost converter is configured to operate in the first half-mode operational phase, the switch controller is configured to turn on the first transistor switch and keep turning off the second transistor switch, and then the multi-phase boost converter is configured to operate in the second half-mode operational phase; wherein when the multiphase boost converter device is configured to operate in the second half-mode operational phase, the switch controller is configured to remain on the first transistor switch and to remain off the second transistor switch, and then the multiphase boost converter device is configured to operate in the third half-mode operational phase.
3. The multi-phase boost converter of claim 2, wherein when the multi-phase boost converter is configured to operate in the third operational phase of half-type, the switch controller is configured to turn off the first transistor switch and keep the second transistor switch off, and then the multi-phase boost converter is configured to operate in the fourth operational phase of half-type; wherein when the multiphase boost converter device is configured to operate in the fourth half-mode operational phase, the switch controller is configured to remain off the first transistor switch and to remain off the second transistor switch, and then the multiphase boost converter device is configured to operate in the fifth half-mode operational phase.
4. A multi-phase boost converter device as set forth in claim 3 wherein when the multi-phase boost converter device is configured to operate in the fifth operational phase of half-type, the switch controller is configured to turn on the second transistor switch and remain off the first transistor switch, and then the multi-phase boost converter device is configured to operate in the sixth operational phase of half-type; Wherein when the multiphase boost converter device is configured to operate in the sixth half-mode operational phase, the switch controller is configured to remain on the second transistor switch and to remain off the first transistor switch, and then the multiphase boost converter device is configured to operate in the seventh half-mode operational phase.
5. The multi-phase boost converter of claim 4, wherein when the multi-phase boost converter is configured to operate in the seventh half-mode operational phase, the switch controller is configured to turn off the second transistor switch and remain off the first transistor switch, and then the multi-phase boost converter is configured to operate in the eighth half-mode operational phase; Wherein when the multiphase boost converter device is configured to operate in the eighth half-mode operational phase, the switch controller is configured to remain off the second transistor switch and to remain off the first transistor switch.
6. The multi-phase boost converter of claim 1, wherein when the multi-phase boost converter is configured to operate in the full-mode first operational phase, the switch controller is configured to turn on the first transistor switch and to remain on the second transistor switch, and then the multi-phase boost converter is configured to operate in the full-mode second operational phase; wherein when the multiphase boost converter device is configured to operate in the full-type second operational phase, the switch controller is configured to keep the first transistor switch on and to turn the second transistor switch off, and then the multiphase boost converter device is configured to operate in the full-type third operational phase.
7. A multi-phase boost converter device in accordance with claim 6, wherein when the multi-phase boost converter device is configured to operate in the full-type third operational phase, the switch controller is configured to remain off the second transistor switch and to remain on the first transistor switch, and then the multi-phase boost converter device is configured to operate in the full-type fourth operational phase; Wherein when the multiphase boost converter device is configured to operate in the full-type fourth operational phase, the switch controller is configured to remain off the second transistor switch and to remain on the first transistor switch, and then the multiphase boost converter device is configured to operate in the full-type fifth operational phase.
8. The multi-phase boost converter of claim 7, wherein when the multi-phase boost converter is configured to operate in the full-mode fifth operational phase, the switch controller is configured to turn on the second transistor switch and remain on the first transistor switch, and then the multi-phase boost converter is configured to operate in the full-mode sixth operational phase; Wherein when the multiphase boost converter device is configured to operate in the full-type sixth operational phase, the switch controller is configured to keep the second transistor switch on and to turn the first transistor switch off, and then the multiphase boost converter device is configured to operate in the full-type seventh operational phase.
9. The multi-phase boost converter of claim 8, wherein when the multi-phase boost converter is configured to operate in the seventh full-mode operational phase, the switch controller is configured to remain on the second transistor switch and to remain off the first transistor switch, and then the multi-phase boost converter is configured to operate in the eighth full-mode operational phase; Wherein when the multiphase boost converter device is configured to operate in the eighth operational phase of full power, the switch controller is configured to remain on the second transistor switch and to remain off the first transistor switch.

Description

Multiphase boost conversion device Technical Field The present invention relates to a multi-phase boost converter with a buffer, and more particularly to a multi-phase boost converter with a passive lossless buffer. Background The dual-phase hard switching boost converter generates a significant voltage and current overlapping area on the voltage and current waveform diagram when the switch is switched, and the voltage and current overlapping area is the switching loss of the switch, which reduces the energy conversion efficiency and increases the element temperature. Later, a dual-phase soft-switching boost converter is proposed, so that the overlapping area of the voltage and the current can be reduced, and further, the energy loss is reduced; the prior art bi-phase soft-switching boost converter reduces switching losses by slowing down the rising or falling slope of the switching voltage or switching current. However, some prior art bi-phase soft switching boost converters have high turn-on losses and can only operate at duty cycles (duty cycles) of less than 50%, some prior art bi-phase soft switching boost converters do not have 180 degrees phase interleaving when operating at duty cycles of less than 50%, and some prior art bi-phase soft switching boost converters have too many switching elements. Disclosure of Invention In order to solve the above-mentioned problems, an object of the present invention is to provide a multiphase boost converter with a passive lossless snubber. The technical scheme includes that the multiphase boost converter comprises a multiphase boost converter and a passive lossless snubber, wherein the passive lossless snubber comprises a first resonant capacitor, a second resonant capacitor, an output first unidirectional conduction element, an output second unidirectional conduction element, an input first unidirectional conduction element, an input second unidirectional conduction element, and a resonant inductor, wherein the first resonant capacitor is electrically connected to the multiphase boost converter, the input first unidirectional conduction element and the input second unidirectional conduction element, the second resonant capacitor is electrically connected to the output second unidirectional conduction element, and the resonant inductor is electrically connected to the multiphase boost converter, the input first unidirectional conduction element and the input second unidirectional conduction element. Compared with the prior art, the invention has the effects of reducing the switching loss of the multiphase boost converter and reducing the electromagnetic interference by utilizing the buffer with a simple structure. The invention can absorb spike after the switch of the multiphase boost converter is turned off and slow down the rising slope of the switch voltage to reduce the electromagnetic interference emission intensity caused by the high voltage slope, so as to reduce the switching loss (namely, the overlapping area of the switch voltage and the switch current on the voltage and current waveform diagram) when the switch is turned off. Drawings FIGS. 1-1 to 1-8 are schematic diagrams of the multiphase boost converter of the present invention in the half-type first operation stage to the half-type eighth operation stage, respectively. FIGS. 2-1 to 2-8 are schematic diagrams of the multi-phase boost converter of the present invention in the full first operation phase to the full eighth operation phase, respectively. FIG. 3 is a block diagram of a multi-phase boost converter according to the present invention. FIG. 4 is a waveform diagram of the multiphase boost converter of the present invention from half-mode first operation stage to half-mode eighth operation stage. FIG. 5 is a waveform diagram of the multiphase boost converter of the present invention from the full first operation stage to the full eighth operation stage. In the figure: 10: multiphase boost conversion device, 102: the multiphase boost converter, 104:passive lossless snubber, 106:switch controller, 108:output, 110:input, 112:pulse width modulation signal, C1:first resonant capacitor, C2:second resonant capacitor, cin:input end capacitance, co:output end capacitance, coss 1:first parasitic capacitance, coss 2:second parasitic capacitance, D1:first diode, D2:second diode, D3:input end first unidirectional conducting element, D4:input end second unidirectional conducting element, D5:output end first unidirectional conducting element, D6:output end second unidirectional conducting element, iC 1:first resonant capacitance current, iC 2:second resonant capacitance current, iD 1:first diode current, iD 2:second diode current, iD 3:input end first unidirectional conducting current, iD 4:input end second unidirectional conducting current, iD 5:output end first unidirectional conducting current, iD 6:output end inductor current, second inductor inductance, D3:input end first unidirectional conducting eleme