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CN-114530756-B - Optical semiconductor module

CN114530756BCN 114530756 BCN114530756 BCN 114530756BCN-114530756-B

Abstract

The invention provides an optical semiconductor module. An optical semiconductor module according to one embodiment includes a substrate having a transmission line, a block including a low dielectric constant material, an inductor mounted on the block, a semiconductor laser element mounted on the substrate, and a case accommodating the substrate, the semiconductor laser element, the block, and the inductor. The inductor is connected to the transmission line via a first lead. The semiconductor laser element is connected to the transmission line via a second lead. The inductance of the first lead is greater than the inductance of the second lead.

Inventors

  • Ita Naoshi

Assignees

  • 住友电气工业株式会社
  • 住友电气工业株式会社

Dates

Publication Date
20260421
Application Date
20211104
Priority Date
20201109

Claims (10)

  1. 1. An optical semiconductor module, comprising: A substrate having a transmission line; a bulk body composed of a low dielectric constant material having a dielectric constant smaller than that of an insulator of the substrate; an inductor mounted on the block; a semiconductor laser element mounted on the substrate, and A case accommodating the substrate, the semiconductor laser device, the block, and the inductor, The transmission line includes a high-frequency wiring extending in a first direction while maintaining a distance from a parallel ground wiring, The inductor is connected to the high-frequency wiring via a first lead, The semiconductor laser element is connected to the high-frequency wiring via a second lead, The inductance of the first lead is greater than the inductance of the second lead.
  2. 2. The optical semiconductor module according to claim 1, wherein, The mass also has a resistance connected in parallel with the inductor.
  3. 3. The optical semiconductor module according to claim 1, wherein, The optical semiconductor module also has an RC series circuit, The inductor is connected between the RC series circuit and the transmission line.
  4. 4. The optical semiconductor module according to claim 1, wherein, The block is disposed inside the housing adjacent to the base plate.
  5. 5. The optical semiconductor module according to claim 1, wherein, The inductance of the first lead is more than 2 times that of the second lead.
  6. 6. An optical semiconductor module, comprising: a substrate; A bulk body composed of a low dielectric constant material having a dielectric constant smaller than that of an insulator of the substrate, and having a transmission line; an inductor mounted on the block; a semiconductor laser element mounted on the substrate, and A case accommodating the substrate, the semiconductor laser device, the block, and the inductor, The transmission line includes a high-frequency wiring extending in a first direction while maintaining a distance from a parallel ground wiring, The inductor is connected to the high-frequency wiring via a first lead, The semiconductor laser element is connected to the high-frequency wiring via a second lead, The inductance of the first lead is greater than the inductance of the second lead.
  7. 7. The optical semiconductor module according to claim 6, wherein, The mass also has a resistance connected in parallel with the inductor.
  8. 8. The optical semiconductor module according to claim 6, wherein, The optical semiconductor module also has an RC series circuit, The inductor is connected between the RC series circuit and the transmission line.
  9. 9. The optical semiconductor module according to claim 6, wherein, The block is disposed inside the housing adjacent to the base plate.
  10. 10. The optical semiconductor module according to claim 6, wherein, The inductance of the first lead is more than 2 times that of the second lead.

Description

Optical semiconductor module Technical Field The present disclosure relates to an optical semiconductor module. The present application claims priority based on japanese application No. 2020-186793 of 11/9/2020, and cites all the descriptions described in the above japanese application. Background Japanese laid-open patent publication No. 2017-107920 describes a semiconductor module having a laser section and an optical modulator section formed on a substrate. The semiconductor module includes a semiconductor laser including a DFB laser and an EA modulator integrated together, and a sub-mount having a high-frequency wiring as a coplanar wiring. The semiconductor laser has a ground electrode on the back surface. The upper surface of the auxiliary pallet is provided with a step formed by an upper layer and a lower layer. The lower surface of the auxiliary supporting plate is flat. The high-frequency wiring has a coplanar line formed on an upper layer of an upper surface of the sub-carrier. The coplanar line has a ground wiring and a signal wiring. A ground electrode is formed on the lower layer of the upper surface of the sub-pallet. The semiconductor laser is configured such that a ground electrode provided on the back surface is in contact with a ground electrode of the sub-mount. Disclosure of Invention An optical semiconductor module according to one aspect of the present disclosure includes a substrate having a transmission line, a block including a low dielectric constant material, an inductor mounted on the block, a semiconductor laser element mounted on the substrate, and a case accommodating the substrate, the semiconductor laser element, the block, and the inductor. The inductor is connected to the transmission line via a first lead. The semiconductor laser element is connected to the transmission line via a second lead. The inductance of the first lead is greater than the inductance of the second lead. An optical semiconductor module according to another aspect of the present disclosure includes a substrate, a block made of a low dielectric constant material and having a transmission line, an inductor mounted on the block, a semiconductor laser element mounted on the substrate, and a case accommodating the substrate, the semiconductor laser element, the block, and the inductor. The inductor is connected to the transmission line via a first lead. The semiconductor laser element is connected to the transmission line via a second lead. The inductance of the first lead is greater than the inductance of the second lead. Drawings Fig. 1 is a plan view schematically showing the internal structure of an optical semiconductor module according to an embodiment. Fig. 2 is a plan view schematically showing a substrate on which a semiconductor laser element is mounted and a bulk on which an inductor is mounted in an optical semiconductor module. Fig. 3 is a side view schematically showing an inductor mounted on a block. Fig. 4 is a plan view schematically showing a substrate on which a semiconductor laser element is mounted and a block on which an inductor is mounted in an optical semiconductor module different from that in fig. 2. Fig. 5 is a diagram showing an equivalent circuit of the illustrated optical semiconductor module. Fig. 6 is a diagram showing an equivalent circuit obtained by simplifying the equivalent circuit of fig. 5. Fig. 7 is a diagram showing an equivalent circuit of the optical semiconductor module of the reference example. Fig. 8 is a graph showing an example of the relationship between frequency and transmission characteristics. Fig. 9 is a graph showing an example of the relationship between frequency and transmission characteristics. Fig. 10 is a diagram showing an equivalent circuit of the optical semiconductor module according to the modification. Fig. 11 is a side view schematically showing a temperature control element, a substrate, and a semiconductor laser element of the optical semiconductor module of fig. 2. Detailed Description Specific examples of the optical semiconductor module according to the embodiments of the present disclosure will be described with reference to the accompanying drawings. The present invention is not limited to these examples, but is represented by the scope of the claims, and is intended to include all modifications within the scope equivalent to the scope of the claims. In the description of the drawings, the same or corresponding elements are denoted by the same reference numerals, and repetitive description thereof will be omitted as appropriate. For ease of understanding, the drawings are partially simplified or exaggerated, and the dimensional ratios and the like are not limited to those described in the drawings. (First embodiment) Fig. 1 is a plan view schematically showing the internal structure of an optical semiconductor module 1 according to a first embodiment. The optical semiconductor module 1 includes, for example, a rectangular case 2 an