CN-114551273-B - Tail gas removal system, method and semiconductor device

CN114551273BCN 114551273 BCN114551273 BCN 114551273BCN-114551273-B

Abstract

The invention relates to a tail gas removal system, a tail gas removal method and semiconductor equipment, belongs to the technical field of semiconductor manufacturing, and solves the problem of low production efficiency caused by a mode of preventing byproducts from scattering on a wafer by replacing an end execution arm in the prior art. The tail gas removal system comprises a plurality of micropores, a multi-branch mixed cavity, a control valve and a discharge pipeline, wherein the micropores are formed in the surface of the tail end execution arm, the discharge pipeline comprises a first discharge pipeline positioned in the tail end execution arm and a second discharge pipeline positioned outside the tail end execution arm, the multi-branch mixed cavity is provided with air outlets and a plurality of air inlets, the number of the air inlets is the same as that of the micropores, the micropores are connected with the air inlets through the first discharge pipeline, the gases of the micropores are collected in the multi-branch mixed cavity, and the air outlets are connected with the control valve through the second discharge pipeline. The invention realizes the purpose of fundamentally preventing the generation of byproducts.

Inventors

LI XIANGLONG
LI JUNJIE
LI LIN
WANG JIA
ZHOU NA

Assignees

中国科学院微电子研究所
真芯(北京)半导体有限责任公司

Dates

Publication Date: 20260512
Application Date: 20201125

Claims (12)

1. The tail gas exhaust system is characterized by comprising a plurality of micropores arranged on the surface of an end execution arm and a tail gas exhaust and suction system communicated with the micropores, wherein the tail gas exhaust and suction system comprises a multi-branch mixing cavity, a control valve for controlling the opening and closing of the tail gas exhaust system and a discharge pipeline; The exhaust pipeline comprises a first exhaust pipeline positioned inside the end execution arm and a second exhaust pipeline positioned outside the end execution arm, the first exhaust pipeline is communicated with the micropore, one side of the multi-branch mixing cavity is communicated with the first exhaust pipeline, and the other side of the multi-branch mixing cavity is communicated with the second exhaust pipeline; The multi-branch mixing cavity is provided with air outlet holes and a plurality of air inlet holes, the number of the air inlet holes is the same as that of the first discharge pipelines, the micropores are connected with the air inlet holes through the first discharge pipelines, and the air sucked through the micropores is collected in the multi-branch mixing cavity; the air outlet hole is connected with the control valve through the second discharge pipeline.
2. The exhaust gas removal system of claim 1, wherein said micropores have a diameter of 0.5mm or less.
3. The exhaust gas removal system of claim 2, wherein said micropores are spaced apart by 0.5-1.5cm.
4. The exhaust gas removal system of any of claims 1-3, wherein the region of the end effector arm having micro-holes is a boundary surface of the end effector arm closest to an edge of the wafer.
5. The exhaust gas removal system of claim 4, wherein said first exhaust line has a diameter of 1-5mm.
6. The exhaust gas removal system of claim 4, wherein a step is provided inside the end effector arm to form a vent passage.
7. The exhaust gas removal system of claim 1 or 2, further comprising a speed controller for adjusting the suction speed, the speed controller being disposed between the outlet port of the multi-branch mixing chamber and the control valve.
8. A semiconductor device comprising the exhaust gas removal system according to any one of claims 1 to 7.
9. A method for removing exhaust gas, comprising: Opening a tail gas removal system, sucking tail gas through a plurality of micropores on the surface of an end execution arm, mixing in a multi-branch mixing cavity, and then entering an atmosphere transmission module through a discharge pipeline; The wafer in the front end opening wafer box on the end actuating arm picking up the wafer device port is placed on the aligner; after aligning the structure, the end effector arm places the wafer into a pre-vacuum chamber; The wafer in the pre-vacuum chamber is picked up by the tail end executing arm and placed in the reaction chamber; After the process in the reaction cavity is finished, the wafer is placed in a pre-vacuum chamber through a vacuum transmission module by an end execution arm; Opening a tail gas removal system for exhausting; the end execution arm places the wafer in the pre-vacuum chamber in the empty groove of the buffer position; the end effector arm picks up the wafer and places it into the original front opening wafer cassette.
10. The exhaust gas removal method according to claim 9, wherein the timing of turning on the exhaust gas removal system is when the semiconductor device is idle.
11. The exhaust gas removal method according to claim 9 or 10, wherein the opening and closing of the exhaust gas removal system is controlled by a control valve.
12. The method of claim 11, comprising turning on an exhaust removal system if the end effector arm senses wafer placement.

Description

Tail gas removal system, method and semiconductor device Technical Field The present invention relates to the field of semiconductor manufacturing technologies, and in particular, to a system and a method for removing tail gas, and a semiconductor device. Background In the semiconductor manufacturing process, toxic gases such as Cl 2、HBr、BCl3 are used in the reaction chamber, during the process of picking up (Pick up) a wafer from the pre-vacuum chamber (Airlock) by the end effector arm of the atmosphere transmission module robot after the process is finished, and during the process of moving from the Buffer Station (Buffer Station) to the front opening wafer box (FOUP), the tail gas on the surface of the wafer is directly exposed to the atmosphere and reacts with moisture in the atmosphere to form byproducts, and the atmospheric transmission module robot quickly moves, and meanwhile, the byproducts randomly fly to cause defects on the wafer to cause quality problems, and meanwhile, the generated byproducts pollute the end effector arm. The prior art solves the above technical problems in two ways: The first method is to set Buffer Station (Buffer Station) for temporarily storing the wafer in the Equipment Front End Module (EFEM); In the second mode, when the end effector arm of the atmosphere transmission module generates by-product pollution, the end effector arm is replaced, and the end effector arm needs to be recalibrated after replacement, the whole repair time is more than 12 hours, and one system consists of a plurality of process chambers, and other process chambers cannot be used in the process of replacing and calibrating the end effector arm, so that the generation efficiency is low. Disclosure of Invention In view of the above, the present invention is directed to an exhaust gas removing system, an exhaust gas removing method, and a semiconductor device, which are used for solving the problem of low production efficiency caused by the way of replacing the end effector to prevent the by-products from scattering on the wafer in the prior art. The aim of the invention is mainly realized by the following technical scheme: In one aspect, the invention provides an exhaust gas removal system, which comprises a plurality of micropores arranged on the surface of an end execution arm and an exhaust gas exhaust system communicated with the micropores, wherein the exhaust gas exhaust system comprises a multi-branch mixing cavity, a control valve and an exhaust pipeline, the control valve is used for controlling the exhaust gas exhaust system to open and close, the exhaust pipeline comprises a first exhaust pipeline positioned inside the end execution arm and a second exhaust pipeline positioned outside the end execution arm, the first exhaust pipeline is communicated with the micropores, one side of the multi-branch mixing cavity is communicated with the first exhaust pipeline, and the other side of the multi-branch mixing cavity is communicated with the second exhaust pipeline. The multi-branch mixing cavity is provided with air outlet holes and a plurality of air inlet holes, the number of the air inlet holes is the same as that of the first discharge pipelines, the micropores are connected with the air inlet holes through the first discharge pipelines, the air sucked through the micropores is collected in the multi-branch mixing cavity, and the air outlet holes are connected with the control valve through the second discharge pipelines. Based on the scheme, the invention also makes the following improvements: Based on the further improvement of the exhaust gas removal system, the diameter of the micropores is less than 0.5 mm. Based on the further improvement of the exhaust gas removal system, the distance between the micropores is 0.5 cm to 1.5cm. Based on the further improvement of the exhaust gas removing system, the area with the micro holes on the end effector is the boundary surface of the end effector closest to the edge of the wafer. Based on a further development of the above exhaust gas removal system, the diameter of the first exhaust line is 1-5mm. Based on the further improvement of the exhaust gas removal system, the end effector arm is internally provided with a step so as to form an exhaust channel. Based on the further improvement of the exhaust gas removal system, the exhaust gas removal system further comprises a speed controller for adjusting the suction speed, wherein the speed controller is arranged between the air outlet hole of the multi-branch mixing cavity and the control valve. In another aspect, the present invention further provides a method for removing exhaust gas, including: Opening a tail gas removal system, sucking tail gas through a plurality of micropores on the surface of an end execution arm, mixing in a multi-branch mixing cavity, and then entering an atmosphere transmission module through a discharge pipeline; The wafer in the front end opening wafer box on the en