CN-114583056-B - Modification method of full-suede perovskite/crystalline silicon laminated solar cell

CN114583056BCN 114583056 BCN114583056 BCN 114583056BCN-114583056-B

Abstract

The invention discloses a modification method of a full suede perovskite/crystalline silicon laminated solar cell, which aims at a vacuum-assisted two-step method for carrying out two-time annealing, wherein an inorganic compound film which is physically deposited in a first step is subjected to steam annealing treatment by a mixed solvent composed of good solvent/poor solvent. The good solvent can act with lead ions in the inorganic compound film to form an intermediate complex, so that crystallization of the perovskite polycrystalline film is delayed in the second thermal annealing, crystallization quality of the perovskite polycrystalline film is improved, meanwhile, due to the existence of the poor solvent in the mixed solvent steam annealing, the first step of coating of the inorganic compound layer on the texture surface of the whole crystalline silicon bottom cell is ensured, and therefore excellent performance of the final all-texture perovskite/crystalline silicon laminated solar cell is ensured.

Inventors

YAO KAI
ZHANG FU
XIONG ZHIJUN

Assignees

南昌大学
南昌大学

Dates

Publication Date: 20260421
Application Date: 20220302
Priority Date: 20220302

Claims (2)

1. The modification method of the full-textured perovskite/crystalline silicon laminated solar cell is characterized in that the full-textured perovskite/crystalline silicon laminated solar cell consists of a double-sided textured heterogeneous crystalline silicon bottom cell, a nanocrystalline silicon tunneling composite layer and a perovskite top cell, wherein a perovskite polycrystalline film in the perovskite top cell is prepared by a two-step method of twice annealing, and in the first step, a thermal evaporation device is adopted to physically deposit an inorganic compound film on the tunneling composite layer, and a good solvent/poor solvent mixed steam with the flow rate of 10 -4 -10 -2 m 3 /h is introduced for annealing treatment; the second step adopts a liquid phase method to coat organic ammonium salt on the treated inorganic compound film, and completes the preparation of perovskite polycrystalline film through thermal annealing treatment, the first step deposits the inorganic compound film in the perovskite polycrystalline film in the perovskite top battery, the thermal evaporation vacuum deposition equipment is adopted to co-evaporate lead iodide and cesium bromide, the deposition rate ratio of the lead iodide to the cesium bromide is adjusted to be between 1:0.04 and 1:0.08, the inorganic compound film with the total thickness of 300-800nm is obtained, the first annealing treatment in the perovskite polycrystalline film in the perovskite top battery is that a sample with the inorganic compound film deposited is placed in a closed container, good solvent/poor solvent mixed steam is introduced, the good solvent is one of dimethyl sulfoxide, N-dimethylformamide or methyl pyrrolidone, the good solvent is chlorobenzene, the mixed volume ratio of the lead iodide and the cesium bromide is 10:1 to 1:10, the solvent steam annealing is stopped after the steam is introduced for 1 to 10 minutes, the sample is rapidly taken out from the closed container, the second annealing treatment in the perovskite top battery is carried out by adopting the liquid phase organic ammonium salt deposition in the perovskite top battery, the preparation method comprises any one of spin coating, knife coating and spray coating, wherein an organic ammonium salt solution is ethanol solution prepared by mixing formamidine hydrobromide and formamidine hydroiodide according to a mass ratio of 1:4, the second annealing of the perovskite polycrystalline film in the perovskite top battery is performed by thermal annealing, and a sample coated with the organic ammonium salt is rapidly placed in a relative humidity environment of about 50% and thermally annealed on a 150 ℃ hot table for 20-40 minutes to prepare the perovskite polycrystalline film.
2. The modification method of the full-textured perovskite/crystalline silicon laminated solar cell according to claim 1, wherein the perovskite top cell is composed of a hole transport layer, a perovskite polycrystalline film prepared by a two-step method of twice annealing, a passivation layer, an electron transport layer, a protection layer, a front indium tin oxide transparent electrode, a front silver grid electrode and an anti-reflection layer in sequence.

Description

Modification method of full-suede perovskite/crystalline silicon laminated solar cell Technical Field The invention belongs to the technical field of solar cells, and particularly relates to a modification method of a full-textured perovskite/crystalline silicon laminated solar cell, which can greatly improve the repeatability of a perovskite top cell preparation process. Background Organic-inorganic metal halide Perovskite Solar Cells (PSCs) have attracted considerable interest in the last decade, single junction perovskite solar cells now having a Photoelectric Conversion Efficiency (PCE) of more than 25%. The adjustable band gap and the low preparation cost of the perovskite/crystalline silicon composite solar cell are very suitable for being matched with crystalline silicon cells to prepare high-efficiency perovskite/crystalline silicon composite solar cells. In the perovskite/crystalline silicon laminated structure, high-energy photons are absorbed in a perovskite top cell, low-energy photons are absorbed in a crystalline silicon bottom cell, heat loss can be reduced by reasonably matching the two materials, and the photoelectric conversion efficiency can be theoretically obtained to be more than 33%. In recent years, perovskite polycrystalline thin films are generally prepared by a liquid phase method, and mainly include coating a precursor solution (such as spin coating, knife coating, etc.) on a substrate and annealing of a wet film. The chemical state and the coating process of the perovskite precursor solution are regulated and controlled, so that the nucleation growth dynamics behavior of crystals can be controlled, and the crystallization quality of the film is greatly improved. Among all regulatory schemes, solvent engineering of the precursor is the most commonly used and effective means, and a highly polar (good) solvent can coordinate with Pb 2+ to affect crystallization rate, while the use of a poorly polar (poor) solvent can reduce the residual of the strong solvent, i.e., reduce the strength of the coordination. However, the front and back sides of the current commercial crystalline silicon battery are large suede shapes of commercial micron level, and the traditional liquid phase method can not prepare a high-quality perovskite polycrystalline film on a large suede substrate, so that the development of the field of perovskite/crystalline silicon laminated batteries is greatly limited. Aiming at the crystal silicon bottom cell with double-sided suede, the perovskite polycrystalline film light absorption layer in the perovskite top cell can be prepared by adopting a vacuum auxiliary two-step method, the preparation method is simple, and the method can completely match with the industrialized crystal silicon bottom cell production process regardless of whether the substrate is a polished surface or a suede. However, there are some important challenges in the full textured high efficiency perovskite/crystalline silicon stacked solar cell prepared by the vacuum assisted two-step method. Mainly due to the first vacuum physical vapor deposition of inorganic compound films, which cannot form intermediate complexes in the liquid phase process, the crystallization process of the perovskite polycrystalline film of the top cell is not controllable. Therefore, the perovskite polycrystalline thin film prepared by the vacuum-assisted two-step method has poor process repeatability, so that the final performance of the full-textured perovskite/crystalline silicon laminated solar cell is far lower than a theoretical value, and a large lifting space exists. How to optimize the quality of the inorganic compound film in the first step of the vacuum auxiliary two-step method to enable the quality to be close to the preparation effect of the liquid phase method is the key to optimize the whole preparation process. Disclosure of Invention In order to overcome the defects of the prior art, the invention provides a modification method of a full suede perovskite/crystalline silicon laminated solar cell. The full suede perovskite/crystalline silicon laminated solar cell provided by the invention consists of a double-sided suede heterogeneous crystalline silicon bottom cell, a nanocrystalline silicon tunneling composite layer and a perovskite top cell, wherein the nanocrystalline silicon tunneling composite layer is made of p-type nanocrystalline silicon, and is prepared on the crystalline silicon bottom cell through plasma enhanced chemical vapor deposition. The full textured perovskite/crystalline silicon laminated solar cell is characterized in that a back silver electrode, a back indium tin oxide transparent electrode, p-type amorphous silicon, intrinsic amorphous silicon, a micron textured intrinsic monocrystalline silicon wafer, intrinsic amorphous silicon, N-type amorphous silicon, a p-type nanocrystalline silicon tunneling composite layer, a hole transport layer 2, 7-tetra (N, N-di-p-tolyl) amino-9, 9-spirob