CN-114628357-B - Semiconductor device and semiconductor module

Abstract

The present invention provides a semiconductor device capable of reducing parasitic inductance in a high-frequency circuit including a semiconductor element of an element semiconductor system and a semiconductor element of a compound semiconductor system. A switch composed of semiconductor elements of an element semiconductor system is provided to a first member. A second member provided with a high-frequency circuit including a semiconductor element of a compound semiconductor system is bonded to the first member. The switch and the high frequency circuit are connected by a path. The path includes an inter-member connection wiring constituted by a metal pattern arranged on an interlayer insulating film from a surface of the second member to a surface of the first member, or a conductive member that causes a current to flow in a direction intersecting an interface where the first member and the second member are joined.

Inventors

• TSUTSUI TAKAYUKI
• YOICHI SAITO

Assignees

• 株式会社村田制作所

Dates

Publication Date

20260505

Application Date

20211213

Priority Date

20201214

Claims (7)

1. 1. A semiconductor device is provided with: a first member provided with a switch composed of a semiconductor element of an element semiconductor system; a second member provided with a high-frequency circuit including a semiconductor element of a compound semiconductor system and bonded to the first member, and A path connecting the switch and the high frequency circuit, The path includes an inter-member connection wiring, which is arranged on an interlayer insulating film from a surface of the second member to a surface of the first member, and a conductive member, which causes a current to flow in a direction intersecting an interface joining the first member and the second member, The high-frequency circuit includes a differential amplifier circuit, The semiconductor device further includes a capacitance-variable circuit connected between a pair of wirings for transmitting the differential signal input to the differential amplifier circuit, the capacitance-variable circuit including a capacitor and the switch, the capacitance between the pair of wirings being changed in accordance with on/off of the switch.
2. 2. The semiconductor device according to claim 1, wherein, The capacitor constituting the capacitance-variable circuit is formed in the first member.
3. 3. The semiconductor device according to claim 1, further comprising: A first balun for converting a single-ended signal into a differential signal input to the differential amplifying circuit, and And a second balance converter for converting the differential signal outputted from the differential amplifier circuit into a single-ended signal.
4. 4. The semiconductor device according to claim 3, wherein, The first balun and the second balun are formed on the first member.
5. 5. The semiconductor device according to claim 3 or 4, wherein, The driving stage amplifying circuit outputs a single-ended signal inputted to the first balun.
6. 6. The semiconductor device according to claim 3 or 4, wherein, The differential power amplifier circuit amplifies a signal output from the differential power amplifier circuit and outputs a differential signal input to the second equalizer.
7. 7. A semiconductor module is provided with: a semiconductor device including a first member provided with a switch constituted by a semiconductor element of an element semiconductor system, and a second member provided with a high-frequency circuit including a semiconductor element of a compound semiconductor system and bonded to the first member; A module substrate on which the semiconductor device is mounted, and A path connecting the switch and the high frequency circuit, The semiconductor device includes a first conductor bump connected to the switch and a second conductor bump connected to the high-frequency circuit, The path includes the first conductor protrusion, a wiring provided on the module substrate, and the second conductor protrusion, The high-frequency circuit includes a differential amplifier circuit, The semiconductor device further includes a capacitance-variable circuit connected between a pair of wirings for transmitting the differential signal input to the differential amplifier circuit, the capacitance-variable circuit including a capacitor and the switch, the capacitance between the pair of wirings being changed in accordance with on/off of the switch.

Description

Semiconductor device and semiconductor module Technical Field The present invention relates to a semiconductor device and a semiconductor module. Background One of the main components mounted on a mobile terminal is a high-frequency power amplifier. In order to increase the radio transmission capacity of a mobile terminal, a radio communication standard using a plurality of frequency bands, such as Carrier Aggregation (CA), is put into practical use. As the frequency band used increases, the circuit structure of the RF front-end becomes complex. Also, in order to be able to use the frequency band of the sub 6GHz band of the fifth generation mobile communication system (5G), the circuit configuration of the RF front end becomes more complicated. If the circuit configuration of the RF front end becomes complicated, loss due to a filter, a switch, or the like inserted in a transmission line from the high-frequency power amplifier to the antenna increases. As a result, the high-frequency power amplifier is required to have a high output in addition to being compatible with a plurality of frequency bands. The following non-patent document 1 discloses a technique of synthesizing outputs of a plurality of CMOS power amplifiers and performing impedance conversion. If the frequency band used is increased, it is preferable to adjust the element constant of the impedance matching circuit according to the frequency band. For example, the element constant is adjusted by turning on and off a switch connected to the reactance element. In addition, a high-frequency power amplifier uses, for example, a heterojunction bipolar transistor of a compound semiconductor system. Non-patent literature 1：Kyu Hwan An et.al.,"Power-Combining Transformer Techniques for Fully-Integrated CMOS Power Amplifiers",IEEE J.of Solid-state Circuits,Vol.43,No.5,MAY(2008) In order to form a switch for adjusting the element constant in a semiconductor chip in which a heterojunction bipolar transistor of a compound semiconductor system is formed, for example, a BiFET structure or a BiHEMT structure is required. Therefore, the manufacturing process becomes complicated. If a switch is formed on a silicon semiconductor chip and a high-frequency power amplifier is formed using a compound semiconductor chip, a BiFET structure or a BiHEMT structure is not required. However, in a structure in which two semiconductor chips are mounted on a module substrate, respectively, the size of the semiconductor module increases. If a silicon semiconductor chip and a compound semiconductor chip are stacked and connected by a bonding wire, the semiconductor module can be miniaturized. However, if the signal to be processed is high frequency, parasitic inductance of the bonding wire cannot be ignored, and desired characteristics cannot be obtained. Disclosure of Invention The present invention aims to provide a semiconductor device and a semiconductor module capable of reducing parasitic inductance in a high-frequency circuit including a semiconductor element of an element semiconductor system and a semiconductor element of a compound semiconductor system. According to one aspect of the present invention, there is provided a semiconductor device including: a first member provided with a switch composed of a semiconductor element of an element semiconductor system; a second member provided with a high-frequency circuit including a semiconductor element of a compound semiconductor system and bonded to the first member, and A path connecting the switch and the high frequency circuit, The path includes an inter-member connection wiring formed of a metal pattern disposed on an interlayer insulating film from a surface of the second member to a surface of the first member, or a conductive member for allowing a current to flow in a direction intersecting an interface joining the first member and the second member. According to another aspect of the present invention, there is provided a semiconductor module including: A semiconductor device including a first member provided with a switch formed of a semiconductor element of an element semiconductor system, and a second member provided with a high-frequency circuit including a semiconductor element of a compound semiconductor system and bonded to the first member; A module substrate on which the semiconductor device is mounted, and A path connecting the switch and the high frequency circuit, The semiconductor device includes a first conductor bump connected to the switch and a second conductor bump connected to the high-frequency circuit, The path includes the first conductor protrusion, a wiring provided on the module substrate, and the second conductor protrusion. Since the switch of the first member and the high-frequency circuit of the second member are not connected using the bonding wire, an increase in parasitic inductance of a path connecting both can be suppressed. Drawings Fig. 1 is a schematic equivalent circuit diagra