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CN-114644890-B - Chemical mechanical polishing composition and method of use thereof

CN114644890BCN 114644890 BCN114644890 BCN 114644890BCN-114644890-B

Abstract

The present invention relates to chemical mechanical polishing compositions and methods of use thereof. The present invention relates to a polishing composition comprising at least one abrasive, at least one organic acid, at least one anionic surfactant comprising at least phosphate, at least one phosphonic acid compound having a molecular weight of less than 500g/mol, at least one azole-containing compound, at least one alkylamine compound having a 6 to 24 carbon alkyl chain, and an aqueous solvent, and optionally, a pH adjustor.

Inventors

  • LIANG YANNAN
  • HU BIN
  • HUANG TINGKAI
  • ZHANG SHUWEI
  • WEN LIQING

Assignees

  • 富士胶片电子材料美国有限公司

Dates

Publication Date
20260508
Application Date
20211220
Priority Date
20201221

Claims (20)

  1. 1. A polishing composition comprising: At least one abrasive; at least one organic acid; at least one anionic surfactant containing at least phosphate; at least one phosphonic acid compound having a molecular weight of less than 500 g/mol, wherein the at least one phosphonic acid compound is selected from the group consisting of phenylphosphonic acid, butylphosphonic acid, hexylphosphonic acid, octylphosphonic acid, benzylphosphonic acid, phenylethylphosphonic acid, phenylpropylphosphonic acid, phenylbutylphosphonic acid, and mixtures thereof; at least one azole-containing compound; at least one alkylamine compound having a6 to 24 carbon alkyl chain, and An aqueous solvent; Optionally, a pH adjustor, Wherein the weight percentage between the phosphonic acid compound and the anionic surfactant is from 5:1 to 100:1, Wherein the cobalt removal rate provided by the composition is from 50 angstroms/minute to 500 angstroms/minute, Wherein the static etch rate SER for cobalt provided by the composition is from 0A/min to 10A/min, and Wherein the at least one azole-containing compound is selected from the group consisting of benzotriazole, adenine, benzimidazole, thiabendazole, tolyltriazole, 1,2, 3-triazole, 1,2, 4-triazole, 1-hydroxybenzotriazole, 2-methylbenzothiazole, 2-aminobenzimidazole, 2-amino-5-ethyl-1, 3, 4-thiadiazole, 3, 5-diamino-1, 2, 4-triazole, 3-amino-5-methylpyrazole, 4-amino-4H-1, 2, 4-triazole, 5-methylbenzotriazole, 5-chlorobenzotriazole, 5-fluorobenzotriazole, 5-bromobenzotriazole, 5-iodobenzotriazole, 5-aminotetrazole, 5-ethylbenzotriazole, 5-butylbenzotriazole, dimethylbenzotriazole, dichlorobenzotriazole, chloromethylbenzotriazole, phenylbenzotriazole, benzylbenzotriazole, nitrobenzotriazole, imidazole, and combinations thereof.
  2. 2. The polishing composition of claim 1, wherein the at least one abrasive is selected from the group consisting of alumina, silica, titania, ceria, zirconia, coformed products of alumina, silica, titania, ceria, or zirconia, coated abrasives, surface modified abrasives, and mixtures thereof.
  3. 3. The polishing composition of claim 1, wherein the amount of the at least one abrasive is 0.01% to 25% by weight of the composition.
  4. 4. The polishing composition of claim 1, wherein the at least one organic acid is selected from the group consisting of gluconic acid, lactic acid, citric acid, tartaric acid, malic acid, glycolic acid, malonic acid, formic acid, oxalic acid, acetic acid, propionic acid, peracetic acid, succinic acid, glycine, phenoxyacetic acid, N-di (hydroxyethyl) glycine, diglycolic acid, glyceric acid, N-tris (hydroxymethyl) methylglycine, maleic acid, nitrilotriacetic acid, ethylenediamine tetraacetic acid, diethylenetriamine pentaacetic acid, alanine, histidine, valine, phenylalanine, proline, glutamine, aspartic acid, glutamic acid, arginine, lysine, tyrosine, glycine, serine, asparagine, cysteine, leucine, isoleucine, methionine, threonine, tryptophan, benzoic acid, and mixtures thereof.
  5. 5. The polishing composition of claim 1, wherein at least two organic acids are present and one is an amino acid.
  6. 6. The polishing composition of claim 1, wherein the amount of the at least one organic acid is 0.001% to 2.5% by weight of the composition.
  7. 7. The polishing composition of claim 1, wherein the at least one anionic surfactant is selected from the group consisting of alkyl phosphates, polyoxyethylene alkyl ether phosphates, polyoxyethylene aryl alkyl ether phosphates, and mixtures thereof.
  8. 8. The polishing composition of claim 1, wherein the at least one anionic surfactant is selected from the group consisting of alkyl phosphates, polyoxyethylene alkyl ether phosphates, polyoxyethylene nonylaryl ether phosphates, and mixtures thereof.
  9. 9. The polishing composition of claim 1, wherein the at least one anionic surfactant is selected from the group consisting of alkyl phosphates, polyoxyethylene alkyl ether phosphates, polyoxyethylene nonylphenyl ether phosphates, and mixtures thereof.
  10. 10. The polishing composition of claim 1, wherein the at least one anionic surfactant further comprises at least one of a hydrophobic 6 to 24 carbon alkyl chain and 2 to 16 ethylene oxide groups.
  11. 11. The polishing composition of claim 1, wherein the amount of the anionic surfactant is 0.001% to 0.5% by weight of the composition.
  12. 12. The polishing composition of claim 1, wherein the amount of the at least one phosphonic acid compound is 0.01% to 1.5% by weight of the composition.
  13. 13. The polishing composition of claim 1, wherein the amount of the at least one azole-containing compound is 0.001% to 0.5% by weight of the composition.
  14. 14. The polishing composition of claim 1, wherein the at least one alkylamine compound has a 6 to 20 carbon alkyl chain.
  15. 15. The polishing composition of claim 1, wherein the amount of the at least one alkyl amine compound is 0.0005% to 0.5% by weight of the composition.
  16. 16. The polishing composition of claim 1, wherein the pH of the composition is 7 to 12.
  17. 17. The polishing composition of claim 1, further comprising: An organic solvent in an amount of 0.01% to 5% by weight of the composition.
  18. 18. The polishing composition of claim 17, wherein the organic solvent is selected from the group consisting of ethanol, 1-propanol, 2-propanol, n-butanol, propylene glycol, 2-methoxyethanol, 2-ethoxyethanol, propylene glycol propyl ether, ethylene glycol, and any combination thereof.
  19. 19. A polishing composition comprising: at least one abrasive in an amount of 0.01% to 25% by weight of the composition; At least two organic acids in an amount of 0.001% to 2.5% by weight of the composition, wherein at least one of the organic acids is an amino acid; at least one anionic surfactant containing at least phosphate and containing at least one of hydrophobic 6 to 24 carbon alkyl chains and 2 to 16 ethylene oxide groups, wherein the amount of anionic surfactant is 0.001% to 0.5% by weight of the composition; At least one phosphonic acid compound having a molecular weight of less than 500 g/mol, the at least one phosphonic acid compound having a molecular weight of less than 500 g/mol in an amount of 0.01% to 1.5% by weight of the composition, wherein the at least one phosphonic acid compound is selected from the group consisting of phenylphosphonic acid, butylphosphonic acid, hexylphosphonic acid, octylphosphonic acid, benzylphosphonic acid, phenylethylphosphonic acid, phenylpropylphosphonic acid, phenylbutylphosphonic acid, and mixtures thereof; at least one azole-containing compound in an amount of from 0.001% to 0.5% by weight of the composition; at least one alkylamine compound having a 6 to 24 carbon alkyl chain in an amount of 0.0005% to 0.5% by weight of the composition, and An aqueous solvent; Wherein the pH of the composition is from 7 to 12, Wherein the weight percentage between the phosphonic acid compound and the anionic surfactant is from 5:1 to 100:1, Wherein the cobalt removal rate provided by the composition is from 50 angstroms/minute to 500 angstroms/minute, Wherein the static etch rate SER for cobalt provided by the composition is from 0A/min to 10A/min, and Wherein the at least one azole-containing compound is selected from the group consisting of benzotriazole, adenine, benzimidazole, thiabendazole, tolyltriazole, 1,2, 3-triazole, 1,2, 4-triazole, 1-hydroxybenzotriazole, 2-methylbenzothiazole, 2-aminobenzimidazole, 2-amino-5-ethyl-1, 3, 4-thiadiazole, 3, 5-diamino-1, 2, 4-triazole, 3-amino-5-methylpyrazole, 4-amino-4H-1, 2, 4-triazole, 5-methylbenzotriazole, 5-chlorobenzotriazole, 5-fluorobenzotriazole, 5-bromobenzotriazole, 5-iodobenzotriazole, 5-aminotetrazole, 5-ethylbenzotriazole, 5-butylbenzotriazole, dimethylbenzotriazole, dichlorobenzotriazole, chloromethylbenzotriazole, phenylbenzotriazole, benzylbenzotriazole, nitrobenzotriazole, imidazole, and combinations thereof.
  20. 20. A method of polishing a substrate comprising cobalt, comprising: applying the polishing composition according to any one of claims 1 to 18 to a substrate comprising cobalt on a surface of the substrate, and A pad is brought into contact with the surface of the substrate and the pad is moved relative to the substrate.

Description

Chemical mechanical polishing composition and method of use thereof Cross Reference to Related Applications The present application claims the benefit according to 35 U.S. c. ≡119 of U.S. provisional patent application serial No. 63/128,412 filed on 12/21 2020, which is incorporated herein by reference. Technical Field The present disclosure relates to chemical mechanical polishing compositions. In particular, the present disclosure relates to polishing compositions that balance desirable polishing performance characteristics of cobalt and other materials used in the art. Background The semiconductor industry is continually driven to further miniaturize devices through process, material and integration innovations to improve chip performance. Early material innovations included the introduction of copper instead of aluminum as the conductive material in the interconnect structure, and the use of tantalum (Ta)/tantalum nitride (TaN) (or titanium (Ti)/titanium nitride (TiN)) as a diffusion barrier to separate the Cu conductive material from the non-conductive/insulator dielectric material. Copper (Cu) is selected as an interconnect material due to its low resistivity and excellent electromigration resistance. However, as the features of new generation chips shrink, the multi-layer copper/barrier/dielectric stack must be thinner and more conformal to maintain effective interconnect resistivity in Back End of Line (BEOL). Thinner Cu and Ta/TaN barrier film schemes present problems in terms of resistivity and flexibility upon deposition. For example, with smaller dimensions and advanced fabrication nodes, resistivity is deteriorating exponentially, and improvement in transistor circuit speed (at front-end-of-line (Front End of Line, FEOL)) is halved by delays from conductive Cu/barrier wiring (BEOL). Cobalt (Co) has become a prime candidate for use as a liner material, barrier layer, and conductive layer. In addition, cobalt has also been investigated as a replacement for tungsten (W) metal in a variety of applications such as W metal contacts, plugs, vias and gate materials. Many of the CMP slurries currently available are specifically designed to remove more common materials in older chip designs, such as the aforementioned copper and tungsten. Some of these older CMP slurries may cause detrimental and unacceptable defects in cobalt because cobalt is more susceptible to chemical attack. Thus, unacceptable erosion, wafer topography, and removal rate selectivity often occur when using copper polishing slurries on cobalt layers. While cobalt is still used in combination with other metals, such as Cu and/or W, as cobalt (Co) is increasingly used as a metal component in semiconductor manufacturing, the market requires CMP slurries that can effectively polish dielectric or barrier components on Co-containing surfaces without significant metal corrosion. Disclosure of Invention This summary is provided to introduce a selection of concepts that are further described below in the detailed description. This summary is not intended to identify key or essential features of the claimed subject matter, nor is it intended to be used as an aid in limiting the scope of the claimed subject matter. As defined herein, unless otherwise indicated, all percentages indicated are to be understood as weight percentages relative to the total weight of the chemical mechanical polishing composition. Furthermore, all ranges shown include the disclosed ranges and any subranges thereof. For example, a range of "0.1% to 1% by weight" includes a range of 0.1 to 1 and any subrange thereof, e.g., 0.2 to 0.9, 0.5 to 1, 0.1 to 0.5, etc. The range of "6 to 24 carbons" includes 6 to 24 carbons, 8 to 20 carbons, 6 to 12 carbons, 10 to 24 carbons, and the like. In one aspect, the present disclosure provides a polishing composition comprising at least one abrasive, at least one organic acid, at least one anionic surfactant comprising at least phosphate, at least one phosphonic acid compound having a molecular weight of less than 500g/mol, at least one azole-containing compound, at least one alkylamine compound having a6 to 24 carbon alkyl chain, and an aqueous solvent, and optionally, a pH adjustor. In another aspect, the present disclosure provides a polishing composition comprising at least one abrasive in an amount of about 0.01% to about 25% by weight of the composition, at least two organic acids in an amount of about 0.001% to about 2.5% by weight of the composition, wherein the at least one organic acid is an amino acid, at least one anionic surfactant containing at least a phosphate salt and containing at least one of a hydrophobic 6 to 24 carbon alkyl chain and 2 to 16 ethylene oxide groups, wherein the amount of anionic surfactant is about 0.001% to about 0.5% by weight of the composition, at least one phosphonic acid compound in an amount of about 0.01% to about 1.5% by weight of the composition, at least one azole compound in an amount of a