CN-114763601-B - Sputtering apparatus and sputtering method using the same

Abstract

The present disclosure relates to a sputtering apparatus and a sputtering method that improve deposition uniformity on an object to be deposited. The sputtering apparatus may include an outer rotating shaft having a tubular shape, an inner rotating shaft disposed in a hollow portion of the outer rotating shaft to rotate independently of the outer rotating shaft, a first arm connected to one of the outer rotating shaft and the inner rotating shaft and rotated about the one rotating shaft by rotation of the one rotating shaft, a second arm disposed at one side of the first arm to rotate about one side of the first arm by rotation of the other of the outer rotating shaft and the inner rotating shaft, and a first magnet assembly connected to one side of the second arm.

Inventors

• PU JUNYU
• LI DALONG
• YIN SHENGJUN
• ZHAO YUANJI

Assignees

• AP系统股份有限公司

Dates

Publication Date

20260505

Application Date

20220112

Priority Date

20210113

Claims (18)

1. 1. A sputtering apparatus comprising: an outer rotating shaft having a tubular shape; An inner rotating shaft provided in the hollow portion of the outer rotating shaft to rotate independently of the outer rotating shaft; A first arm connected to one of the outer rotation shaft and the inner rotation shaft and rotated around the one rotation shaft by rotation of the one rotation shaft; A second arm provided at one side of the first arm to rotate around one side of the first arm by rotation of the other of the outer rotation shaft and the inner rotation shaft, and A first magnet assembly connected to one side of the second arm, Wherein the sputtering apparatus further comprises a control unit configured to independently control rotation of each of the outer rotating shaft and the inner rotating shaft to adjust a rotation speed of each of the first arm and the second arm, Wherein the control unit divides the process into a front half process and a rear half process according to time, and Wherein the control unit controls: The outer rotary shaft and the inner rotary shaft having the same rotational speed in the first half of the process, and The outer and inner rotational shafts have different rotational speeds in the latter half of the process.
2. 2. The sputtering apparatus of claim 1, further comprising: a first rotating body connected to the other rotating shaft and rotated by the rotation of the other rotating shaft, and And a second rotating body connected to the second arm and rotated by a rotational force transmitted from the first rotating body to enable the second arm to rotate.
3. 3. The sputtering apparatus of claim 1, further comprising: a first magnet weight connected to the other side of the second arm, and A weight connected to the other side of the first arm.
4. 4. The sputtering apparatus of claim 3, wherein the counterweight has a weight greater than a weight of the first magnet counterweight.
5. 5. The sputtering apparatus of claim 1, further comprising: A third arm disposed on the other side of the first arm; a second magnet assembly connected to one side of the third arm; a first magnet weight connected to the other side of the second arm, and And a second magnet weight connected to the other side of the third arm.
6. 6. The sputtering apparatus of claim 5, wherein the third arm is fixed to the other side of the first arm.
7. 7. The sputtering apparatus according to claim 5, further comprising a third rotating body connected to the third arm and rotated by a rotational force transmitted from the first rotating body, Wherein the third arm rotates around the other side of the first arm by rotation of the third rotating body.
8. 8. The sputtering apparatus of claim 1, wherein the control unit changes a rotation track of the first magnet assembly by controlling a rotation speed of each of the outer rotation shaft and the inner rotation shaft.
9. 9. The sputtering apparatus of claim 8, wherein the control unit determines the rotational path of the first magnet assembly according to an object to be deposited.
10. 10. The sputtering apparatus according to claim 1, further comprising a reference position detection unit configured to detect a reference position of each of the first arm and the second arm.
11. 11. The sputtering apparatus of claim 10, wherein the control unit arranges each of the first arm and the second arm to the reference position before a process starts.
12. 12. A sputtering method, comprising: Performing a first sputtering while enabling a first arm to rotate at the same speed, the first arm being connected to one of an outer rotation shaft and an inner rotation shaft, each of which rotates independently and about the one rotation shaft, and a second arm having one side connected to a first magnet assembly and rotated about one side of the first arm by rotation of the other of the outer rotation shaft and the inner rotation shaft, and Performing a second sputtering while enabling the first arm and the second arm to rotate at different speeds, Wherein in said performing said first sputtering and said performing said second sputtering, The rotation of each of the outer and inner rotational shafts is independently controlled to adjust the rotational speed of each of the first and second arms, Wherein the process is divided into a front half process and a rear half process according to time, and Wherein the first sputtering is performed in the first half of the process, the outer rotating shaft and the inner rotating shaft are rotated at the same speed in the first sputtering, The second sputtering is performed in the latter half of the process, and the outer rotating shaft and the inner rotating shaft rotate at different speeds in the second sputtering.
13. 13. The sputtering method according to claim 12, wherein the second sputtering is performed when the second arm has a rotation speed slower than that of the first arm.
14. 14. The sputtering method of claim 12, wherein a third arm is provided at the other side of the first arm, one side of which is connected to a second magnet assembly.
15. 15. The sputtering method according to claim 14, wherein the first sputtering is performed while the first arm and the second arm are rotated in a state where the third arm is fixed to the first arm.
16. 16. The sputtering method according to claim 14, wherein the first sputtering or the second sputtering is performed by distinguishing a rotation start position of the first magnet assembly and the second magnet assembly.
17. 17. The sputtering method of claim 12, further comprising arranging each of the first arm and the second arm to a reference position.
18. 18. The sputtering method of claim 12, further comprising determining a rotational path of the first magnet assembly according to an object to be deposited.

Description

Sputtering apparatus and sputtering method using the same Technical Field The present disclosure relates to a sputtering apparatus and a sputtering method, and more particularly, to a sputtering apparatus and a sputtering method that improve deposition uniformity on an object to be deposited. Background Sputtering, known as physical vapor deposition (physical vapor deposition, PVD), is the most well known method of depositing metal layers and related materials in the process of manufacturing semiconductor integrated circuits. The most commercially important sputtering is plasma sputtering that uses a magnetron behind the target to increase the density and sputtering speed of the plasma. In recent years, plasma sputtering using a small magnetron has been widely used. Since the small magnetron rotates while being adjacent to the circumference of the target and the center of the small magnetron is adjacent to the sputtering surface of the target to project a strong magnetic field, a high density plasma is generated. Here, the high density plasma increases the sputtering speed and also generates a large amount of ionized sputtered particles. Although the magnetron is spaced from the center of the target, the ions tend to diffuse toward the center and sputter the deposit over the entire substrate (or wafer). In essence, sputter deposition tends to deposit the edge of the substrate thinner than the center of the substrate, as the sputter area (or zone) of the target affecting the edge of the substrate is reduced more than the center of the substrate. However, the small magnetrons provided at the circumference have the limitation of (re) depositing impurities or large amounts of sputtered particles onto the non-sputtered regions of the target. The material deposited to the center of the target is not prone to additional sputtering and forms a thickened film that is not easily attached to the substrate target. In one aspect, the (re) deposited film is stripped from the target to produce excess particles in the chamber. The particles tend to fall on the substrate and cause yield loss or device reliability degradation, causing defects in the final integrated circuit. Therefore, a cleaning process is generally and frequently performed on the target. In the cleaning mode, the sputtering conditions are changed due to the production wafer which is not typically provided in the chamber, and the center of the target is sputtered to remove sputtered material (re-) deposited on the center of the target. [ Prior Art literature ] [ Patent literature ] Korean patent No. 10-0786713 Disclosure of Invention The present disclosure provides a sputtering apparatus and a sputtering method that precisely control a rotation orbit of a magnet assembly to improve deposition uniformity on an object to be deposited. According to an exemplary embodiment, a sputtering apparatus includes an outer rotating shaft having a tubular shape, an inner rotating shaft disposed in a hollow portion of the outer rotating shaft to rotate independently of the outer rotating shaft, a first arm connected to one of the outer rotating shaft and the inner rotating shaft and rotated around the one rotating shaft by rotation of the one rotating shaft, a second arm disposed at one side of the first arm to rotate around one side of the first arm by rotation of the other of the outer rotating shaft and the inner rotating shaft, and a first magnet assembly connected to one side of the second arm. The sputtering apparatus may further include a first rotating body connected to the other rotating shaft and rotated by rotation of the other rotating shaft, and a second rotating body connected to the second arm and rotated by a rotational force transmitted from the first rotating body to enable the second arm to rotate. The sputtering apparatus may further include a first magnet weight connected to the other side of the second arm, and a weight connected to the other side of the first arm. The weight may have a weight greater than a weight of the first magnet weight. The sputtering apparatus can further include a third arm disposed at the other side of the first arm, a second magnet assembly connected to one side of the third arm, a first magnet weight connected to the other side of the second arm, and a second magnet weight connected to the other side of the third arm. The third arm may be fixed to the other side of the first arm. The sputtering apparatus may further include a third rotating body connected to the third arm and rotated by a rotational force transmitted from the first rotating body, and the third arm may be rotated around the other side of the first arm by rotation of the third rotating body. The sputtering apparatus can also include a control unit configured to control rotation of each of the outer rotating shaft and the inner rotating shaft. The control unit may divide a process into two processes according to time to differently control a rotation speed di