CN-114823259-B - Machine and method for machining structure

CN114823259BCN 114823259 BCN114823259 BCN 114823259BCN-114823259-B

Abstract

The embodiment of the invention relates to a machine for processing a structure and a method thereof. The machine for processing the structure comprises an electron beam lens barrel, an ion beam mask, a processor and a controller. The electron beam column may irradiate an electron beam to a workpiece to obtain an electron beam image of the workpiece, and the ion beam column may irradiate an ion beam to the workpiece to obtain an ion beam image of the workpiece and process the workpiece. The processor can identify the electron beam image and the ion beam image, calculate and obtain the position information of the workpiece, and the controller controls the relative positions of the ion beam lens barrel, the ion beam mask and the workpiece according to the position information.

Inventors

HONG SHIWEI
LI ZHENGZHONG

Assignees

台湾积体电路制造股份有限公司
台湾积体电路制造股份有限公司

Dates

Publication Date: 20260421
Application Date: 20210119
Priority Date: 20210119

Claims (10)

1. A machine for machining a structure, comprising: an electron beam column arranged to irradiate an electron beam from a side of a workpiece to obtain a side section electron beam image of the workpiece; An ion beam column arranged to irradiate an ion beam on the workpiece to obtain an ion beam image of the workpiece and process the workpiece; an ion beam mask provided between the ion beam barrel and the workpiece, for blocking a portion of the ion beam to selectively process the workpiece; A processor coupled to the electron beam column and the ion beam column, wherein the processor comprises: an image recognition module for recognizing the electron beam image and the ion beam image, and A calculation module for processing the side-section electron beam image to compare the measurement information of the electron beam image with the pixel information of the electron beam image to obtain position information having a deviation distance between the workpiece and the ion beam mask, and And the controller is connected with the processor and is used for adjusting the relative position relation among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information so as to correct the relative alignment of the ion beam mask and the workpiece.
2. The machine of claim 1, wherein the image recognition module is arranged to further process the ion beam image.
3. The machine of claim 2, wherein the image recognition module is arranged to adjust gray scale values of the ion beam image.
4. The machine of claim 1, wherein the computing module is arranged to recognize a mode of operation through a sample training machine to obtain the positional information of the workpiece based on the electron beam image.
5. The tool of claim 1, wherein the processor is further configured to observe an aspect ratio of a precursor material layer of the workpiece from the electron beam image, and the controller is configured to adjust an illumination process of the ion beam in accordance with the aspect ratio to maintain the aspect ratio of the precursor material layer of the workpiece greater than a predetermined value.
6. The tool of claim 1, wherein the electron beam column is arranged to correspond to the side of the workpiece and the ion beam column is arranged to correspond to a top of the workpiece.
7. A method to machine a structure, comprising: Irradiating an electron beam on a workpiece from the side edge of the workpiece to obtain a side section electron beam image of the workpiece; Identifying the electron beam image by a processor and processing the side-profile electron beam image to compare the measured information of the electron beam image with the pixel information of the electron beam image to obtain position information including a deviation distance between the workpiece and an ion beam mask, and And adjusting the relative position relation among the ion beam, the ion beam mask and the workpiece by using a controller according to the position information so as to correct the relative alignment of the ion beam mask and the workpiece, and selectively processing the workpiece by using the ion beam to penetrate the ion beam mask.
8. The method of claim 7, further comprising observing an aspect ratio of a precursor material layer of the workpiece from the electron beam image, and adjusting an illumination process of the ion beam in accordance with the aspect ratio to maintain the aspect ratio of the precursor material layer of the workpiece greater than a predetermined value.
9. The method of claim 7, wherein processing the workpiece with the ion beam comprises irradiating the workpiece with the ion beam for etching processing.
10. A machine for machining a structure, comprising: an electron beam column arranged to irradiate a workpiece with an electron beam from a side of the workpiece to obtain a side section electron beam image of the workpiece; An ion beam column arranged to irradiate the workpiece with an ion beam; an ion beam mask provided between the ion beam barrel and the workpiece, for blocking a portion of the ion beam to selectively process the workpiece; a processor arranged to perform the following operations: obtaining an electron beam image from the electron beam column and/or an ion beam image from the ion beam column; Identifying the electron beam image and/or the ion beam image, and Performing a calculation based on the electron beam image and/or the ion beam image to obtain positional information of the workpiece, wherein the calculation includes processing the side-section electron beam image to compare measurement information of the electron beam image with pixel information of the electron beam image to obtain the positional information including a deviation distance between the workpiece and the ion beam mask, and And the controller is used for controlling and adjusting the relative position relation among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information so as to correct the relative alignment of the ion beam mask and the workpiece.

Description

Machine and method for machining structure Technical Field The present disclosure relates to a machine and method for processing structures, and more particularly to a machine and method for processing samples for fabricating three-dimensional atom probes. Background Three-dimensional atom probes (3D-AP or APT: atom Probe Tomography) are considered to be the only technology capable of providing both 3D images of atomic scale resolution and chemical composition. The quality of the three-dimensional atomic probe tip determines the quality of experimental data, and generally, the three-dimensional atomic probe tip sample must meet the requirements that (1) the radius of the tip is nano-scale size, (2) the shape of the tip must be symmetrical to avoid forming ellipses, (3) the cone angle (SHAPE ANGLE) of the tip must not be too large, (4) the shaft must avoid microcracking, and (5) other tips or micro tips must not appear within a certain distance around the tip. In recent years, a great deal of application of three-dimensional atom probes is relevant to the technology of fabricating test pieces, and most important is the application of Focused Ion Beam (FIB). Disclosure of Invention In some embodiments, the disclosure provides a machine for structural processing, comprising an electron beam column, an ion beam mask, a processor, and a controller. The electron beam column may irradiate an electron beam to a workpiece so that an electron beam image of the workpiece may be obtained, and the ion beam column may irradiate an ion beam to the workpiece so that an ion beam image of the workpiece may be obtained and the workpiece may be processed. The ion beam mask is disposed between the ion beam column and the workpiece, and can be used to block a portion of the ion beam. The processor includes an image recognition module operable to recognize the electron beam image and the ion beam image and a calculation module operable to process the electron beam image to obtain positional information of the workpiece. The controller can adjust the relative position relation among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information. In some embodiments, the present disclosure provides a method of structural processing comprising irradiating a workpiece with an electron beam to obtain an electron beam image of the workpiece, recognizing the electron beam image with a processor to obtain positional information of the workpiece from the electron beam image, and adjusting a relative positional relationship among an ion beam, an ion beam mask, and the workpiece with a controller according to the positional information, and processing the workpiece with the ion beam. In some embodiments, the disclosure provides a machine for structural processing, comprising an electron beam column, an ion beam column, a processor, and a controller. The electron beam column may irradiate an electron beam to a workpiece, and the ion beam column may irradiate an ion beam to the workpiece. The processor is arranged to perform operations of obtaining an electron beam image from the electron beam column and/or an ion beam image from the ion beam column, identifying the electron beam image and/or the ion beam image and calculating from the images to obtain position information of the workpiece. In addition, the controller controls and adjusts the relative positional relationship among the ion beam lens barrel, the ion beam mask and the workpiece according to the position information. The foregoing has outlined rather broadly the features of the present disclosure in order that the detailed description of the disclosure that follows may be better understood. Other technical features that form the subject of the claims of the present disclosure are described below. It should be appreciated by those skilled in the art that the conception and specific embodiment disclosed may be readily utilized as a basis for modifying or designing other structures or processes for carrying out the same purposes of the present disclosure. It should also be realized by those skilled in the art that such equivalent constructions do not depart from the spirit and scope of the disclosure as set forth in the appended claims. Drawings Aspects of the disclosure will be better understood from the following detailed description, taken in conjunction with the accompanying drawings. It should be noted that the various features are not drawn to scale in accordance with industry standard practice. In fact, the dimensions of the various features may be arbitrarily expanded or reduced for clarity of illustration. Fig. 1 is a schematic diagram of a machine according to an embodiment of the disclosure. Fig. 2 is a flow chart of a method for preparing a semiconductor sample using the apparatus of fig. 1. Fig. 3 is an image of an ion beam obtained using the apparatus of fig. 1. Fig. 4 is an electron beam image obtained using the apparatus of fig. 1