CN-114823272-B - Semiconductor processing equipment

CN114823272BCN 114823272 BCN114823272 BCN 114823272BCN-114823272-B

Abstract

The application discloses semiconductor process equipment, which relates to the technical field of semiconductors, and comprises a process chamber, a dielectric window, a radio frequency chamber and a gas flow introducing device, wherein the dielectric window is arranged above the process chamber, the radio frequency chamber is arranged above the process chamber, the dielectric window faces the inside of the radio frequency chamber, the radio frequency chamber is provided with a vent, external gas enters the radio frequency chamber from the vent under the action of the gas flow introducing device and flows to the temperature-controlled gas flow of the dielectric window from top to bottom in the radio frequency chamber, and the side wall of the radio frequency chamber is provided with a heat dissipation hole. By the arrangement, even if the dielectric window is under the high-power radio frequency condition, the semiconductor process equipment can rapidly cool the dielectric window, so that the dielectric window is cooled to be in a proper temperature range.

Inventors

MAO XINGFEI
YANG YANMING
YANG JIPENG
YANG RUI
LI YAN
CHEN XING
Jin Guangpu
WANG WEI
Dai Genglin
YAO WEIJIE

Assignees

北京北方华创微电子装备有限公司
北京北方华创微电子装备有限公司

Dates

Publication Date: 20260421
Application Date: 20220525
Priority Date: 20220525

Claims (13)

1. A semiconductor processing apparatus, comprising: a process chamber (100) and a dielectric window (200), wherein the dielectric window (200) is arranged above the process chamber (100); The radio frequency chamber (300) is arranged above the process chamber (100), the dielectric window (200) faces the inside of the radio frequency chamber (300), and the radio frequency chamber (300) is provided with a vent; The air flow introducing device (500) is used for introducing external air into the radio frequency cavity (300) from the air vent under the action of the air flow introducing device (500) and generating temperature-controlled air flow flowing to the dielectric window (200) from top to bottom in the radio frequency cavity (300), and a radiating hole (330) is formed in the side wall of the radio frequency cavity (300); The air flow introducing device (500) comprises an air source (510) and an air amplifier (520), wherein the air amplifier (520) is provided with a compressed air inlet (a), an air flow suction inlet (b) and an air flow discharge outlet (c), the compressed air inlet (a) is communicated with the air source (510), the air flow suction inlet (b) is communicated with the external environment, and the air flow discharge outlet (c) is communicated with the radio-frequency cavity (300); The semiconductor process equipment further comprises a temperature detection element for detecting the temperature of the dielectric window (200), wherein the number of the air amplifiers (520) is at least two, and the number of the air sources (510) is at least two, and the air sources (511) and (512) are included, the compressed gas inlet (a) of the first air amplifier (521) is communicated with the first air source (511), and the compressed gas inlet (a) of the second air amplifier (522) is communicated with the second air source (512); In case the temperature detected by the temperature detecting element is higher than a third preset temperature and lower than a fourth preset temperature, the first air source (511) provides compressed air for both the first air amplifier (521) and the second air amplifier (522); -said first air source (511) provides compressed air to said first air amplifier (521) and said second air source (512) provides compressed air to said second air amplifier (522) in case the temperature detected by said temperature detecting element is higher than said fourth preset temperature; Wherein the fourth preset temperature is greater than the third preset temperature.
2. The semiconductor process equipment according to claim 1, further comprising a static pressure chamber (400), the static pressure chamber (400) being provided with an air inlet (410), the air flow introduction device (500) being arranged in the static pressure chamber (400), external air entering the static pressure chamber (400) through the air inlet (410) and diffusing in the static pressure chamber (400) under the action of the air flow introduction device (500), and the static pressure chamber (400) being further provided with an air outlet (420), the air outlet (420) being in communication with the air vent.
3. The semiconductor processing apparatus of claim 2, wherein the rf chamber (300) is connected between the process chamber (100) and the static pressure chamber (400), the exhaust port (420) is provided at a bottom wall of the static pressure chamber (400), the vent port is provided at a top wall of the rf chamber (300), the vent port is opposite the dielectric window (200), and the exhaust port (420) is opposite the vent port.
4. A semiconductor process equipment according to claim 3, characterized in that the exhaust port (420) comprises a first exhaust port (421) and a second exhaust port (422), the distance between the first exhaust port (421) and the center of the dielectric window (200) being smaller than the distance between the second exhaust port (422) and the center of the dielectric window (200), the flow area of the first exhaust port (421) being larger than the flow area of the second exhaust port (422); The air vents comprise a first air vent (310) and a second air vent (320), the first air vent (310) is opposite to and communicated with the first air vent (421), the second air vent (320) is opposite to and communicated with the second air vent (422), and the overflow area of the first air vent (310) is larger than that of the second air vent (320).
5. The semiconductor processing apparatus according to claim 2, wherein at least two of the gas flow introduction devices (500) are provided at intervals in a direction surrounding the dielectric window (200), and each of the gas flow introduction devices (500) is uniformly distributed.
6. The semiconductor processing apparatus according to claim 1, wherein a plurality of said heat dissipating holes (330) are provided in the side wall of said rf chamber (300) in the direction surrounding said dielectric window (200) and in the direction of arrangement of said process chamber (100) and said rf chamber (300), In the arrangement direction of the process chamber (100) and the radio frequency chamber (300), the heat dissipation hole (330) closest to the air vent is a first heat dissipation hole (331), the heat dissipation hole (330) farthest from the air vent is a second heat dissipation hole (332), the distance between the first heat dissipation hole (331) and the air vent is larger than a preset distance value, and the second heat dissipation hole (332) faces the outer peripheral surface of the dielectric window (200).
7. The semiconductor process equipment according to claim 1, further comprising a filter housing (600), the filter housing (600) being provided at the air flow suction inlet (b), the filter housing (600) being provided with a plurality of filter holes (611).
8. The semiconductor process apparatus of claim 1, further comprising a connection line (811), a pressure regulating valve, a flow detection element, and a switching valve (812), said gas source (510) being in communication with said compressed gas inlet (a) via said connection line (811), said switching valve (812), said pressure regulating valve, and said flow detection element being all disposed in said connection line (811), said temperature detection element being in communication with said switching valve (812); The switch valve (812) is in an open state when the temperature detected by the temperature detection element is higher than a first preset temperature, and the switch valve (812) is in a closed state when the temperature detected by the temperature detection element is lower than a second preset temperature; Wherein the second preset temperature is less than the first preset temperature.
9. The semiconductor processing apparatus of claim 1, further comprising a first line (821), a second line (822), a third line (823), a first switching valve (824), a second switching valve (825), a third switching valve (826), a third pressure regulating valve (827), a fourth pressure regulating valve (830), and a flow sensing element, The compressed gas inlet (a) of the first air amplifier (521) is communicated with the first air source (511) through the first pipeline (821), the compressed gas inlet (a) of the second air amplifier (522) is communicated with the second air source (512) through the second pipeline (822), the first switching valve (824) and the third pressure regulating valve (827) are both arranged on the first pipeline (821), the second switching valve (825) and the fourth pressure regulating valve (830) are both arranged on the second pipeline (822), and the first pipeline (821) and the second pipeline (822) are both provided with the flow detection element; A first end of the third pipeline (823) is connected with the first pipeline (821), a connection part is positioned between the first switch valve (824) and the first air amplifier (521), a second end of the third pipeline (823) is connected with the second pipeline (822), a connection part is positioned between the second switch valve (825) and the second air amplifier (522), the third switch valve (826) is arranged on the third pipeline (823), and the temperature detection element is respectively in communication connection with the first switch valve (824), the second switch valve (825) and the third switch valve (826); The first switching valve (824) and the third switching valve (826) are opened and the second switching valve (825) is closed when the temperature detected by the temperature detecting element is higher than the third preset temperature and lower than the fourth preset temperature, and the first switching valve (824) and the second switching valve (825) are opened and the third switching valve (826) is closed when the temperature detected by the temperature detecting element is higher than the fourth preset temperature.
10. The semiconductor processing apparatus of claim 9, wherein the third switching valve (826) is a one-way valve that turns on the third pipeline (823) in a direction from a first end of the third pipeline (823) to a second end of the third pipeline (823).
11. The semiconductor processing apparatus of claim 1, further comprising a gas flow guide cylinder (700), the gas flow guide cylinder (700) being located within the radio frequency chamber (300), the gas flow guide cylinder (700) being connected to the radio frequency chamber (300), a first end of the gas flow guide cylinder (700) being in communication with the vent, a second end of the gas flow guide cylinder (700) being opposite the dielectric window (200).
12. The semiconductor processing apparatus of claim 11, wherein the flow area of the flow guide cylinder (700) gradually increases, or gradually decreases, or is a constant value in a direction approaching the dielectric window (200).
13. The semiconductor processing apparatus of claim 1, further comprising a heating device comprising an air heater and a gas circulation flow path, the gas circulation flow path being disposed within the rf chamber (300) and oriented toward the dielectric window (200), the air heater being disposed in the gas circulation flow path to heat a gas flowing through the gas circulation flow path.

Description

Semiconductor processing equipment Technical Field The application belongs to the technical field of semiconductors, and particularly relates to semiconductor process equipment. Background Semiconductor etching equipment is an important semiconductor processing equipment used in semiconductor manufacturing processes. The semiconductor etching equipment comprises a process chamber, a dielectric window and a coil, wherein the coil is positioned outside the process chamber, the dielectric window is arranged at the top of the process chamber, when the semiconductor etching equipment works, the coil can form an electromagnetic field with specific frequency under the action of an excitation source, the electromagnetic field enters the process chamber through the dielectric window to ionize gas in the process chamber into plasma, and the plasma carries out processing treatment on wafers in the process chamber. The dielectric window is heated under the action of the plasma, and because the thickness of the dielectric window is larger, a larger temperature gradient exists after the dielectric window is heated, so that internal stress can be generated, and fatigue fracture can be caused for a long time. In the related art, in order to effectively control the temperature uniformity of the dielectric window, a heating device for heating the dielectric window is arranged outside the process chamber, the heating device can be an annular heating belt, the annular heating belt surrounds the outer peripheral surface of the dielectric window, the annular heating belt directly heats the dielectric window in an electrified state, the heating device also can comprise an air heater, an air amplifier and a circulating heating device formed by a pipeline, the outlet end of the pipeline corresponds to the outer surface of the dielectric window, the air heater and the air amplifier are both arranged in the pipeline, gas is introduced into the pipeline by the air amplifier, and flows into the outer surface of the dielectric window after being heated by the air heater so as to heat the dielectric window. Or the two heating devices are combined to heat the dielectric window. The medium window is provided with a temperature sensor, and whether the annular heating belt and/or the air heater is electrified or not is controlled according to the temperature of the medium window detected by the temperature sensor. The scheme can maintain the temperature of the dielectric window within the range of 100-120 ℃ under the standby condition, but under the high-power radio frequency condition, the dielectric window can be heated to 140 ℃ in a very short time as the temperature rising speed of the dielectric window is high, and the temperature is far higher than the temperature value under the standby condition, so that the temperature lowering speed of the dielectric window is required to be higher than the temperature rising speed to maintain the temperature stability, and the scheme cannot meet the temperature control requirement under the high-power radio frequency condition. Disclosure of Invention The embodiment of the application aims to provide semiconductor process equipment, which can solve the problem that the related technology cannot meet the temperature control requirement of a dielectric window under the high-power radio frequency condition. The embodiment of the application provides semiconductor process equipment, which comprises the following steps: The device comprises a process chamber and a dielectric window, wherein the dielectric window is arranged above the process chamber; The radio frequency chamber is arranged above the process chamber, the dielectric window faces the inside of the radio frequency chamber, and the radio frequency chamber is provided with a vent; The air flow introducing device is used for introducing external air into the radio frequency cavity from the air vent under the action of the air flow introducing device, generating temperature-control air flow flowing to the dielectric window from top to bottom in the radio frequency cavity, and the side wall of the radio frequency cavity is provided with a heat radiation hole. In the embodiment of the application, the air flow introducing device can be used for rapidly introducing air into the radio frequency cavity, the air flows to the medium window from top to bottom in the radio frequency cavity and carries away the heat of the medium window so as to cool the medium window and meet the requirement of the medium window on temperature control uniformity. Simultaneously, the gas carrying heat is discharged out of the radio frequency chamber through the heat dissipation holes. Therefore, even if the dielectric window is under the high-power radio frequency condition, the semiconductor process equipment can rapidly cool the dielectric window, so that the dielectric window is cooled to be in a proper temperature range. Moreover, under the condition that the air fl