CN-114900960-B - Manufacturing method of packaging substrate and packaging substrate

CN114900960BCN 114900960 BCN114900960 BCN 114900960BCN-114900960-B

Abstract

The invention discloses a manufacturing method of a packaging substrate and the packaging substrate, and relates to the technical field of semiconductor packaging. The method comprises the steps of preparing a substrate with double-sided copper coating, carrying out laser drilling on the substrate to form a through hole, carrying out hole filling electroplating on the substrate to form solid copper columns in the through hole, respectively forming conductive copper columns at two ends of the solid copper columns, etching copper foil on the surface of the substrate, arranging a first dielectric layer on two sides of the substrate, and exposing the end faces of the conductive copper columns to form a core board. According to the manufacturing method of the packaging substrate, the core board with high dielectric thickness and solid via holes can be formed, the technical defects of the existing thick core board non-solid via holes are overcome, and the problems of limited hole density, poor stress of the non-solid via holes and the like in the existing technology are solved.

Inventors

CHEN XIANMING
LIN WENJIAN
HUANG GAO
Huang Benxia
Huang Juchen
FENG JINDONG

Assignees

珠海越亚半导体股份有限公司

Dates

Publication Date: 20260512
Application Date: 20220411

Claims (5)

1. The manufacturing method of the packaging substrate is characterized by comprising the following steps of: preparing a double-sided copper-clad substrate; performing laser drilling on the substrate to form a through hole; depositing chemical copper on the wall of the through hole; attaching a first dry film to both sides of the substrate; exposing and developing the first dry film to expose the position corresponding to the through hole; Performing hole filling electroplating on the substrate so as to form a solid copper column in the through hole; Attaching a second dry film to both sides of the substrate; exposing and developing the second dry film to expose the corresponding position of the conductive copper column; Electroplating the substrate to form the conductive copper columns at two ends of the solid copper columns; removing the first dry film and the second dry film; Etching the copper foil on the surface of the substrate; a first dielectric layer is arranged on the two sides of the substrate, and the end faces of the conducting copper columns are exposed to form a core plate; The laser drilling is carried out on the substrate to form a through hole, and the method specifically comprises the following steps: and carrying out laser drilling on the two sides of the substrate to form the through holes which gradually narrow from the two ends to the middle.
2. The method of manufacturing a package substrate of claim 1, further comprising the steps of: a first seed layer is arranged on two sides of the core plate; manufacturing a first circuit on the first seed layer, wherein the first circuit is conducted with the conducting copper column; and etching the first seed layer exposed on the surface of the first dielectric layer.
3. The method of manufacturing a package substrate of claim 2, further comprising the steps of: a second dielectric layer is arranged on two sides of the core plate, and the second dielectric layer covers the first circuit; a second laser blind hole is formed in the second dielectric layer; manufacturing a second seed layer on the surface of the second dielectric layer and on the inner wall of the second laser blind hole; Performing hole filling electroplating on the second laser blind hole, and forming a second circuit on the surface of the second dielectric layer, wherein the second circuit is communicated with the first circuit; And etching the second seed layer exposed on the surface of the second dielectric layer.
4. The method for manufacturing a package substrate according to claim 1, wherein a first dielectric layer is disposed on both sides of the substrate, and an end surface of the conductive copper pillar is exposed to form a core board, and the method specifically comprises: the first dielectric layer is arranged on the two sides of the substrate; polishing the first dielectric layer to enable the first dielectric layer to be flush with the end face of the conducting copper column to form the core plate, or And arranging a first laser blind hole on the first dielectric layer so as to expose the end face of the conducting copper column and form the core plate.
5. A package substrate prepared by the method of any one of claims 1-4.

Description

Manufacturing method of packaging substrate and packaging substrate Technical Field The present invention relates to the field of semiconductor packaging technology, and in particular, to a method for manufacturing a packaging substrate and a packaging substrate. Background With the development of electronic products in the direction of miniaturization and multifunctional integration, the linear density and the hole density of the package substrate are continuously increased, and the requirement on the reliability of the package substrate is also higher. In the prior art, in order to manufacture via holes in a thick core board (the thickness is generally 150 μm or more), non-solid holes are generally plated, then resin is filled into the holes, and the whole board is polished after the resin is solidified. The method has the defects that the hole density is easily limited by a hole plugging process and a plate grinding process, the higher the hole density is, the more difficult the problem and difficulty brought to production and manufacture are increased, the hole density is difficult to further increase, secondly, the brush mark is caused on a copper layer by the grinding process after resin filling, the problem of open circuit rejection and the like caused by subsequent circuit manufacture is difficult to thoroughly solve, and even the problem of potential reliability hazards are caused, in addition, the copper thickness in a non-solid via hole is usually 10-15 mu m, and the copper thickness has a very high longitudinal depth and is weaker in the capability of resisting stress without causing hole copper fracture compared with a solid via hole (the copper thickness is usually more than or equal to 40 mu m). Disclosure of Invention The present invention aims to solve at least one of the technical problems existing in the prior art. Therefore, the invention provides a manufacturing method of a packaging substrate and the packaging substrate, which can realize a core board with high dielectric thickness and solid via holes. On one hand, the manufacturing method of the packaging substrate comprises the steps of preparing a substrate with double-sided copper coating, carrying out laser drilling on the substrate to form a through hole, carrying out hole filling electroplating on the substrate to enable solid copper columns to be formed in the through hole, respectively forming conductive copper columns at two ends of the solid copper columns, etching copper foils on the surface of the substrate, and arranging first dielectric layers on two sides of the substrate and enabling end faces of the conductive copper columns to be exposed to form a core board. According to some embodiments of the present invention, the method further comprises the steps of providing a first seed layer on both sides of the core plate, fabricating a first line on the first seed layer, the first line being in conduction with the conductive copper pillar, and etching the first seed layer exposed from the surface of the first dielectric layer. According to some embodiments of the invention, the method further comprises the steps of arranging a second dielectric layer on two sides of the core board, wherein the second dielectric layer covers the first circuit, arranging a second laser blind hole on the second dielectric layer, manufacturing a second seed layer on the surface of the second dielectric layer and the inner wall of the second laser blind hole, performing hole filling electroplating on the second laser blind hole, forming a second circuit on the surface of the second dielectric layer, conducting the second circuit with the first circuit, and etching the second seed layer exposed on the surface of the second dielectric layer. According to some embodiments of the invention, the laser drilling the substrate to form the through hole specifically comprises laser drilling the two sides of the substrate to form the through hole gradually narrowing from two ends to the middle. According to some embodiments of the invention, the hole filling electroplating is performed on the substrate to form a solid copper column in the through hole, and the method specifically comprises the steps of depositing chemical copper on the wall of the through hole, pasting a first dry film on the two sides of the substrate, exposing and developing the first dry film to expose the corresponding position of the through hole, and performing the hole filling electroplating on the substrate to form the solid copper column in the through hole. According to some embodiments of the invention, the method for forming the conductive copper pillars at the two ends of the solid copper pillars comprises the steps of sticking a second dry film on the two sides of the substrate, exposing and developing the second dry film to expose the corresponding positions of the conductive copper pillars, electroplating the substrate to form the conductive copper pillars at the two ends