CN-114927511-B - Micro-LED chip with single-chip integrated large-area multicolor high-resolution display and manufacturing method thereof

CN114927511BCN 114927511 BCN114927511 BCN 114927511BCN-114927511-B

Abstract

The invention provides a Micro-LED chip for single-chip integrated large-area multicolor high-resolution display and a manufacturing method thereof. The Micro-LED chip comprises a first LED chip array and a second LED chip array which are arranged in a stacked mode, wherein the first LED chip array comprises a plurality of first LED chips with normal mounting structures, the second LED chip array comprises a plurality of second LED chips with inverted mounting structures, and a driving array arranged between the first LED chip array and the second LED chip array, wherein the driving array comprises a plurality of driving units, the driving units are integrated in pixel positions of the Micro-LED chips, and each first LED chip and each second LED chip are respectively and electrically connected with the corresponding driving units. According to the invention, the spacing between the LED chips can be reduced by alternately arranging the front-mounted chips and the flip-chip chips, and the resolution of the display screen is improved, so that the display effect is better and finer.

Inventors

ZHOU YUGANG
CHEN KUILI
XU CHAOJUN
YIN JIE
JIN NAN
ZHANG RONG
WANG XINRAN
LIU BIN

Assignees

南京大学

Dates

Publication Date: 20260512
Application Date: 20220419
Priority Date: 20211227

Claims (9)

1. A Micro-LED chip for monolithically integrated large-area multicolor high-resolution display, comprising: The LED module comprises a first LED chip array and a second LED chip array which are stacked, wherein the first LED chip array comprises a plurality of first LED chips with positive mounting structures, and the second LED chip array comprises a plurality of second LED chips with inverted structures; A driving array arranged between the first LED chip array and the second LED chip array, wherein the driving array comprises a plurality of driving units, the driving units are integrated in the pixel sites of the Micro-LED chips, each first LED chip and each second LED chip are respectively and electrically connected with the corresponding driving units, the driving array comprises a thin film transistor array, and each driving unit comprises at least one thin film transistor; a first insulating layer disposed between the thin film transistor array and a side surface of the first LED chip array having the electrodes, A second insulating layer disposed between the thin film transistor array and a surface of the second LED chip array having the electrode; the thin film transistor array includes: a plurality of first thin film transistors mated to the first LED chip array, A plurality of second thin film transistors mated with the second LED chip array; The first insulating layer is provided with a plurality of first windows, and one electrode of each first LED chip is electrically connected with one electrode of a corresponding first thin film transistor through one first window; The second insulating layer is provided with a plurality of second windows, and one electrode of each second LED chip is electrically connected with one electrode of a corresponding second thin film transistor through one second window.
2. The Micro-LED chip of claim 1, wherein the other electrode of each first LED chip is electrically connected to the other electrode of a corresponding second LED chip, and/or both electrodes of each first LED chip are exposed from a corresponding first window, and/or both electrodes of each second LED chip are exposed from a corresponding second window.
3. The Micro-LED chip of claim 1, wherein the first insulating layer covers a surface of the first LED chip array on which the electrodes are distributed or a first surface of the thin film transistor array, and the second insulating layer covers a surface of the second LED chip array on which the electrodes are distributed or a second surface of the thin film transistor array, the second surface being disposed opposite to the first surface.
4. The Micro-LED chip of claim 1, wherein: The P electrode of each first LED chip penetrates through the corresponding first window and is electrically connected with the drain electrode of the corresponding first thin film transistor, and The P electrode of each second LED chip penetrates through the corresponding second window and is electrically connected with the drain electrode of the corresponding second thin film transistor, or the drain electrode of each second thin film transistor penetrates through the corresponding second window and is electrically connected with the P electrode of the corresponding second LED chip.
5. The Micro-LED chip of claim 1, wherein the gate electrodes of the thin film transistors in the same row in the thin film transistor array are further connected to a corresponding gate electrode control line, and the source electrodes of the thin film transistors in the same column are further connected to a corresponding source electrode control line.
6. The Micro-LED chip of claim 1, wherein the first LED chip and the second LED chip have the same light emitting direction.
7. The Micro-LED chip of claim 1, wherein the first LED chip array further comprises a first wavelength conversion layer overlying the light-emitting surface of the first LED chip, and the second LED chip array further comprises a second wavelength conversion layer overlying the light-emitting surface of the second LED chip.
8. The method of manufacturing Micro-LED chips for monolithically integrated large-area multi-color high-resolution display according to any one of claims 1 to 7, comprising the steps of manufacturing a first LED chip array and manufacturing a second LED chip array, wherein the method further comprises: Forming a first insulating layer on a surface of the first LED chip array, which is provided with electrodes, and arranging a plurality of first windows on the first insulating layer, wherein the first windows are used for exposing two electrodes of each first LED chip; Setting a driving array on the first insulating layer, wherein the driving array comprises a plurality of first driving units and a plurality of second driving units, and one electrode of each first LED chip is electrically connected with one electrode of a corresponding first driving unit; Forming a second insulating layer on a surface of the driving array far from the first insulating layer, and arranging a plurality of second windows on the second insulating layer so as to expose at least one electrode of the plurality of second driving units; and attaching the surface of the side, provided with the electrodes, of the second LED chip array to the second insulating layer, and electrically connecting one electrode of each second LED chip with one electrode of a corresponding second driving unit.
9. The method of manufacturing Micro-LED chips for monolithically integrated large-area multi-color high-resolution display according to any one of claims 1 to 7, comprising the steps of manufacturing a first LED chip array and manufacturing a second LED chip array, wherein the method further comprises: Forming a first insulating layer on a surface of the first LED chip array, which is provided with electrodes, and arranging a plurality of first windows on the first insulating layer, wherein the first windows are used for exposing two electrodes of each first LED chip; Setting a driving array on the first insulating layer, wherein the driving array comprises a plurality of first driving units and a plurality of second driving units, and one electrode of each first LED chip is electrically connected with one electrode of a corresponding first driving unit; Forming a second insulating layer on a surface of the second LED chip array, which is provided with electrodes, and arranging a plurality of second windows on the second insulating layer, wherein the second windows are used for exposing two electrodes of each second LED chip; And attaching one surface of the driving array far away from the first insulating layer to the second insulating layer, and electrically connecting one electrode of each second LED chip with one electrode of a corresponding second driving unit.

Description

Micro-LED chip with single-chip integrated large-area multicolor high-resolution display and manufacturing method thereof Technical Field The present invention relates to semiconductor device structures and methods of making the same, for example, monolithically integrated multi-color Micro-LED display device structures and methods of making the same. Background Active matrix Liquid Crystal Displays (LCDs) and Organic Light Emitting Diode (OLED) displays combined with Thin Film Transistor (TFT) technology are becoming increasingly popular in today's commercial electronic devices. These displays are widely used in laptop personal computers, smart phones and personal digital assistants. Millions of pixels together create an image on a display. The TFT acts as a switch to individually turn each pixel on and off, thereby brightening or dimming the pixel, which allows each pixel and the entire display to be controlled conveniently and efficiently. However, conventional LCD displays suffer from low light efficiency, resulting in high power consumption and limited battery operation time. The organic light emitting diode has low reliability, screen burning and other problems. Micro-LED displays utilize micron-sized (typically less than 50 um) inorganic LED devices as light emitting pixels to achieve active light emitting matrix displays. From the display technology principle, micro-LEDs, organic Light Emitting Diodes (OLED) and quantum dot light emitting diodes (QLED) belong to active light emitting display technology. However, unlike the OLED and QLED display technologies, micro-LEDs have excellent light emission performance and long life, and the industrialization of the Micro-LEDs is mainly faced with the problems of integration process and related materials. However, integration of thousands or even millions of micro LEDs with an array of pixel driver circuits is very challenging. Various methods of fabrication have been proposed. One of the methods proposes that the control circuit is fabricated on one substrate and that the LEDs are fabricated on a separate substrate. The LEDs are transferred onto an intermediate substrate and the original substrate is removed. The LEDs on the intermediate substrate are then picked up and placed on the substrate one or a few at a time using the control circuitry. However, this manufacturing process is inefficient and costly. In addition, no existing manufacturing tools exist for mass transfer of micro LEDs. The invention relates to a semiconductor device structure and a manufacturing method thereof, which provides a solution to the problems. Disclosure of Invention The invention mainly aims to provide a Micro-LED chip with large-area multicolor high-resolution display integrated by a chip and a manufacturing method thereof, so as to overcome the defects in the prior art. In order to achieve the purpose of the invention, the technical scheme adopted by the invention comprises the following steps: the embodiment of the invention provides a Micro-LED chip for single-chip integrated large-area multicolor high-resolution display, which comprises the following components: The LED module comprises a first LED chip array and a second LED chip array which are stacked, wherein the first LED chip array comprises a plurality of first LED chips with positive mounting structures, and the second LED chip array comprises a plurality of second LED chips with inverted structures; The driving array is arranged between the first LED chip array and the second LED chip array, the driving array comprises a plurality of driving units, the driving units are integrated in pixel positions of the Micro-LED chips, and each first LED chip and each second LED chip are respectively and electrically connected with the corresponding driving units. The embodiment of the invention also provides a manufacturing method of the Micro-LED chip for monolithically integrated large-area multicolor high-resolution display, which comprises the steps of manufacturing a first LED chip array and manufacturing a second LED chip array, and the manufacturing method further comprises the following steps: Forming a first insulating layer on a surface of the first LED chip array, which is provided with electrodes, and arranging a plurality of first windows on the first insulating layer, wherein the first windows are used for exposing two electrodes of each first LED chip; Setting a driving array on the first insulating layer, wherein the driving array comprises a plurality of first driving units and a plurality of second driving units, and one electrode of each first LED chip is electrically connected with one electrode of a corresponding first driving unit; Forming a second insulating layer on a surface of the driving array far from the first insulating layer, and arranging a plurality of second windows on the second insulating layer so as to expose at least one electrode of the plurality of second driving units; and attaching t