CN-114937622-B - Waste liquid discharge system, waste liquid discharge method and application

CN114937622BCN 114937622 BCN114937622 BCN 114937622BCN-114937622-B

Abstract

The invention relates to the field of semiconductor equipment waste liquid discharge, in particular to a waste liquid discharge system, a waste liquid discharge method and application. The waste liquid discharge system comprises a compressed gas storage device, a first pneumatic diaphragm valve, a siphoning device, a second pneumatic diaphragm valve, a deposition chamber and a gas-liquid separation device, wherein the compressed gas storage device, the first pneumatic diaphragm valve, the siphoning device, the second pneumatic diaphragm valve and the deposition chamber are sequentially connected, and the gas-liquid separation device is connected with a gas-liquid mixing outlet of the siphoning device. The waste liquid discharge system has reasonable arrangement of all parts and structures, and can effectively solve the problem that plating solution spin-dried on a wafer flows back to a process chamber after being deposited in a deposition chamber process.

Inventors

CHEN SUWEI
LI JIADONG
LIU YINGYING
LI GUOSEN
Zhang Guituo

Assignees

北京半导体专用设备研究所（中国电子科技集团公司第四十五研究所）

Dates

Publication Date: 20260512
Application Date: 20220524

Claims (8)

1. The waste liquid discharge system is characterized by comprising a compressed gas storage device, a first pneumatic diaphragm valve, a siphon device, a second pneumatic diaphragm valve, a deposition chamber and a gas-liquid separation device; the compressed gas storage device, the first pneumatic diaphragm valve, the siphon device, the second pneumatic diaphragm valve and the deposition chamber are sequentially connected; the gas-liquid separation device is connected with a gas-liquid mixing outlet of the siphoning device; the siphon device sucks the waste liquid from the upper part of the deposition chamber through siphon effect; a pressure reducing valve is arranged at the air outlet of the compressed gas storage device; A diaphragm check valve is arranged between the first pneumatic diaphragm valve and the siphon device.
2. The waste drain system of claim 1, wherein a flow sensing device is disposed between the second pneumatic diaphragm valve and the siphon device.
3. A waste liquid discharge method using the waste liquid discharge system according to claim 1 or 2, characterized by comprising the steps of: The method comprises the steps of introducing compressed gas into a siphon device through a compressed gas storage device, enabling waste liquid in a deposition chamber to enter the siphon device, enabling the compressed gas and the waste liquid in the deposition chamber to jointly enter a gas-liquid separation device for gas-liquid separation, and discharging the separated waste liquid in the deposition chamber.
4. A method of discharging waste liquid according to claim 3, wherein the first pneumatic diaphragm valve is opened and the compressed gas storage device is supplied with compressed gas to the siphon device.
5. A method of waste discharge according to claim 3, wherein the second pneumatic diaphragm valve is opened and waste in the deposition chamber enters the siphoning device.
6. A waste liquid discharge method according to claim 3, wherein the flow rate of the waste liquid in the deposition chamber is detected during the process of the waste liquid in the deposition chamber entering the siphon device.
7. An electrochemical deposition system comprising the waste discharge system of claim 1 or 2.
8. An electrochemical deposition method comprising the waste liquid discharge method according to any one of claims 3 to 6.

Description

Waste liquid discharge system, waste liquid discharge method and application Technical Field The invention relates to the field of semiconductor equipment waste liquid discharge, in particular to a waste liquid discharge system, a waste liquid discharge method and application. Background Electrochemical deposition (ECD) is an important way of Integrated Circuit (IC) metallization, which has lower cost advantages and higher plating efficiency over sputtering and evaporation. As ICs continue to evolve toward light, thin, short, and small, each chip manufacturer places higher demands on the performance of ECD devices. The performance of plating by the ECD equipment on the market at present cannot meet the development requirement, one of the problems is that during the process of a deposition chamber, the plating solution spin-dried on the wafer cannot be discharged from the lower part of the chamber, and the deposited waste liquid flows back to the process chamber, so that the stability of the plating solution components is affected, and a series of quality problems are caused. In view of this, the present invention has been made. Disclosure of Invention The first object of the present invention is to provide a waste liquid discharge system, in which the components and structures are arranged reasonably, so that the problem that plating solution spin-dried on a wafer flows back to a process chamber after being deposited in a deposition chamber process can be effectively solved. A second object of the present invention is to provide a waste liquid discharge method, which is simple and easy to operate, and which can effectively discharge plating solution in a deposition chamber without complicated process conditions, using the waste liquid discharge system. The third object of the present invention is to provide an electrochemical deposition system, which includes the waste liquid discharge system, and can effectively discharge the electroplating waste liquid in the deposition chamber, so as to improve the transition effect. A fourth object of the present invention is to provide an electrochemical deposition method, including the waste liquid discharge method, capable of avoiding the problem that the effect of plating is affected by the inability to effectively discharge the plating solution. In order to achieve the above object of the present invention, the following technical solutions are specifically adopted: the invention provides a waste liquid discharge system, which comprises a compressed gas storage device, a first pneumatic diaphragm valve, a siphon device, a second pneumatic diaphragm valve, a deposition chamber and a gas-liquid separation device, wherein the first pneumatic diaphragm valve is arranged on the first pneumatic diaphragm valve; the compressed gas storage device, the first pneumatic diaphragm valve, the siphon device, the second pneumatic diaphragm valve and the deposition chamber are sequentially connected; the gas-liquid separation device is connected with the gas-liquid mixing outlet of the siphoning device. In the existing deposition chamber process, the plating solution spin-dried on the wafer cannot be discharged from the lower part of the chamber, and the deposited waste liquid flows back to the process chamber, so that the stability of the plating solution components is affected, and the quality of the final product is affected. Compared with the existing plating solution discharge system, the waste solution discharge system provided by the invention uses components such as the pneumatic diaphragm valve, the siphon device, the gas-liquid separation and the like, sucks waste solution from the upper part of the deposition chamber through the siphon effect, performs gas-liquid separation, and finally separates and discharges the waste solution, thereby effectively solving the problem that the waste solution flows back into the deposition chamber. Preferably, a flow detection device is arranged between the second pneumatic diaphragm valve and the siphoning device. Preferably, a pressure reducing valve is arranged at the air outlet of the compressed gas storage device. Preferably, a diaphragm check valve is provided between the first pneumatic diaphragm valve and the siphon device. The waste liquid discharge method provided by the invention uses the waste liquid discharge system, and comprises the following steps: The method comprises the steps of introducing compressed gas into a siphon device through a compressed gas storage device, enabling waste liquid in a deposition chamber to enter the siphon device, enabling the compressed gas and the waste liquid in the deposition chamber to jointly enter a gas-liquid separation device for gas-liquid separation, and discharging the separated waste liquid in the deposition chamber. At present, the performance of plating by the ECD apparatus in the prior art cannot meet the development requirement, one of the problems is that during the process