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CN-115011344-B - Color conversion panel, group of luminescent nanostructures, and ink composition

CN115011344BCN 115011344 BCN115011344 BCN 115011344BCN-115011344-B

Abstract

A color conversion panel, a population of luminescent nanostructures, and an ink composition are provided. The color conversion panel comprises a color conversion layer comprising two or more color conversion regions and optionally a partition wall defining the regions of the color conversion layer. The color conversion region includes a first region corresponding to a green pixel, the first region including a first composite configured to emit green light and comprising a matrix and a plurality of luminescent nanostructures dispersed in the matrix. The luminescent nanostructure comprises a first semiconductor nanocrystal comprising a group III-V compound comprising indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal comprising a zinc chalcogenide comprising zinc, selenium, and sulfur. The luminescent nanostructure does not include cadmium, and at least a portion of a surface of the luminescent nanostructure includes a second semiconductor nanocrystal. The emitted green light has a full width at half maximum of the maximum emission peak of less than or equal to about 42 nm.

Inventors

  • JIN ZEXUN
  • LIN MEIHUI
  • JIN TAIKUN
  • YANG HUIYUAN
  • LI ZHONGMIN
  • Tian Xinai
  • WEN DEGUI
  • Cao Yaluo
  • An Zhuyan
  • Yuan Nayuan

Assignees

  • 三星显示有限公司
  • 三星电子株式会社

Dates

Publication Date
20260421
Application Date
20220307
Priority Date
20210305

Claims (20)

  1. 1. A color conversion panel, the color conversion panel comprising: A color conversion layer comprising color conversion areas and optionally a partition wall defining each color conversion area of the color conversion layer, Wherein the color conversion region includes a first region corresponding to a green pixel, and the first region includes a first compound configured to emit green light and including a matrix and a plurality of light emitting nanostructures dispersed in the matrix, Wherein the luminescent nanostructure comprises a first semiconductor nanocrystal comprising a III-V compound comprising indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal comprising a zinc chalcogenide comprising zinc, selenium, and sulfur, wherein the luminescent nanostructure does not comprise cadmium, Wherein in the luminescent nanostructure, the molar ratio of zinc to indium is greater than or equal to 12:1 and less than or equal to 25:1, the molar ratio of selenium to indium is greater than or equal to 2:1 and less than or equal to 6.5:1, Wherein at least a portion of the surface of the luminescent nanostructure comprises a second semiconductor nanocrystal, and Wherein the full width at half maximum of the maximum luminescence peak of the green light is less than or equal to 42 nm.
  2. 2. The color conversion panel of claim 1, wherein in the luminescent nanostructure, a molar ratio of zinc to indium is greater than or equal to 12:1 and less than or equal to 22:1, and a molar ratio of selenium to indium is greater than or equal to 3.5:1 and less than or equal to 6:1.
  3. 3. The color conversion panel of claim 2, wherein the luminescent nanostructures exhibit an ultraviolet-visible absorption spectrum having positive differential coefficient values at 450nm, and Wherein the differential coefficient value is greater than or equal to 0.001.
  4. 4. The color conversion panel of claim 1, wherein, in the ultraviolet-visible absorption spectrum of the luminescent nanostructure, a ratio of absorbance at a first absorption peak wavelength to absorbance at a wavelength of 350nm is greater than or equal to 0.2:1, or The valley depth defined by the following equation is greater than or equal to 0.4, the valley depth being represented by VD: 1-(Abs Cereal grain /Abs First one )=VD Where Abs First one corresponds to the absorbance at the first absorption peak and Abs Cereal grain corresponds to the absorbance at the lowest point of the valley adjacent to the first absorption peak.
  5. 5. The color conversion panel of claim 1, wherein the plurality of luminescent nanostructures comprises a molar ratio of sulfur to selenium of greater than or equal to 0.5:1 and less than or equal to 3.5:1.
  6. 6. The color conversion panel of claim 1, wherein the plurality of luminescent nanostructures comprises a molar ratio of phosphorus to indium of greater than or equal to 0.7:1 and less than or equal to 1.5:1.
  7. 7. The color conversion panel of claim 1, wherein the first compound exhibits a percent quantum yield loss of less than 14% under irradiation of incident light at a wavelength of 450nm to 460nm, the quantum yield represented by QY, wherein the percent QY loss is defined by the following equation: QY loss (%) = [1- (QY at 80 ℃ C/QY at room temperature) ]x100, wherein, QY at 80C-quantum yield of the first complex at 80C, QY at room temperature quantum yield of the first complex at room temperature.
  8. 8. The color conversion panel of claim 1, wherein the first compound is configured to exhibit a tailing percentage of less than or equal to 15% when illuminated with incident light having a wavelength of 458nm, defined by the following equation: Trailing percentage (%) = [ S2/S1] ×100, wherein, S1, total area of maximum photoluminescence peaks of the first complex, and S2, the area of the maximum photoluminescence peak of the first compound in a wavelength region of 580nm or more.
  9. 9. The color conversion panel of claim 1, wherein when the first compound is illuminated with incident light having a wavelength of 458nm, the first compound is configured to exhibit a light conversion rate of greater than or equal to 33% defined by the following equation: (a/B) ×100=light conversion rate (%), wherein, A, a light dose of green light emitted from the first compound, and And B, the light dose of the incident light.
  10. 10. The color conversion panel of claim 1, wherein a molar ratio of selenium to a sum of selenium and sulfur at a surface of the luminescent nanostructure is greater than 0 and less than or equal to 0.3:1.
  11. 11. A population of luminescent nanostructures of the type comprising a plurality of luminescent nanostructures, Wherein the luminescent nanostructure comprises a first semiconductor nanocrystal comprising a III-V compound and a second semiconductor nanocrystal comprising a zinc chalcogenide, Wherein the III-V compounds include indium, phosphorus, and optionally zinc, and the zinc chalcogenides include zinc, selenium, and sulfur, Wherein the luminescent nanostructure does not include cadmium, Wherein in the luminescent nanostructure, the molar ratio of zinc to indium is greater than or equal to 12:1 and less than or equal to 25:1, the molar ratio of selenium to indium is greater than or equal to 2:1 and less than or equal to 6.5:1, Wherein at least a portion of the surface of each of the light emitting nanostructures comprises a second semiconductor nanocrystal, Wherein the luminescent nanostructure is configured to emit green light, Wherein the luminescent nanostructure is configured to exhibit an ultraviolet-visible absorption spectrum having a positive differential coefficient value at 450nm, and Wherein in the ultraviolet-visible absorption spectrum of the luminescent nanostructure, the ratio of absorbance at the first absorption peak wavelength to absorbance at the wavelength of 350nm is greater than or equal to 0.2:1.
  12. 12. The population of claim 11, wherein the luminescent nanostructure further comprises an organic ligand bound to a surface of the luminescent nanostructure, and Wherein, in the luminescent nano structure, the molar ratio of zinc to indium is greater than or equal to 12:1 and less than or equal to 24:1, and the molar ratio of selenium to indium is greater than or equal to 3.5:1 and less than or equal to 6:1.
  13. 13. The population of claim 11, wherein the differential coefficient value is greater than or equal to 0.001.
  14. 14. The population of claim 11, wherein the luminescent nanostructures exhibit a quantum efficiency of greater than or equal to 80%, and the maximum photoluminescence peak of the luminescent nanostructures has a full width at half maximum of greater than or equal to 45 nm.
  15. 15. The population of claim 11, wherein the luminescent nanostructure has a core-shell structure comprising a core and a single shell disposed on the core, Wherein the core comprises a first semiconductor nanocrystal, Wherein the single shell comprises the second semiconductor nanocrystal.
  16. 16. The population of claim 15, wherein the outermost layer of the single shell is comprised of the second semiconductor nanocrystals.
  17. 17. The population of claim 16, wherein the luminescent nanostructure further comprises an organic ligand disposed on or bound to the outermost layer of the single shell.
  18. 18. The population of claim 11, wherein the molar ratio of selenium to the sum of selenium and sulfur is greater than 0 and less than or equal to 0.3:1 at the surface of the luminescent nanostructure.
  19. 19. The population of claim 11, wherein the luminescent nanostructures comprise a molar ratio of sulfur to selenium of greater than or equal to 0.5:1 and less than or equal to 3.5:1, and Wherein the luminescent nanostructure comprises a molar ratio of phosphorus to indium greater than or equal to 0.7:1 and less than or equal to 1.5:1.
  20. 20. An ink composition comprising a liquid carrier and a population of luminescent nanostructures according to any one of claims 11 to 19.

Description

Color conversion panel, group of luminescent nanostructures, and ink composition The present application claims priority and ownership rights generated therefrom of korean patent application No. 10-2021-0029746 filed on 3 months 5 of 2021 in the korean intellectual property office, the contents of which are incorporated herein by reference in their entirety. Technical Field Disclosed are a light emitting nanostructure, a manufacturing method for manufacturing the same, and a color conversion panel and an electronic device (e.g., a display panel) including the same. Background The nanostructures may exhibit different aspects, characteristics, or properties, for example, in terms of some of their physical properties (e.g., bandgap energy, luminescence properties, etc.), referred to as intrinsic properties of the bulk material, compared to corresponding bulk materials having substantially the same composition. The luminescent nanostructure may be configured to emit light when excited by energy such as incident light or an applied voltage. Luminescent nanostructures may find applicability in a variety of devices (e.g., display panels or electronic devices including display panels). There is a strong interest in developing luminescent nanostructures that do not include toxic heavy metals (such as cadmium) but still are capable of exhibiting similar or even improved luminescent properties or performance. Disclosure of Invention Embodiments provide a color conversion panel including luminescent nanostructures that may exhibit improved optical properties (e.g., luminous efficiency, incident light absorption, etc.) and enhanced (chemical and/or thermal) stability. Embodiments provide a method of fabricating a luminescent nanostructure. Embodiments provide an ink composition comprising a population of luminescent nanostructures or comprising luminescent nanostructures. Embodiments provide an electronic device (e.g., a display device) including a luminescent nanostructure or color conversion panel. In an embodiment, a color conversion panel includes a color conversion layer including color conversion regions including a first region corresponding to a green pixel and including a first composite configured to emit green light and including a matrix and a plurality of luminescent nanostructures dispersed in the matrix, and optionally a partition wall defining each region of the color conversion layer, Wherein the luminescent nanostructure comprises a first semiconductor nanocrystal comprising a III-V compound comprising indium, phosphorus, and optionally zinc, and a second semiconductor nanocrystal comprising a zinc chalcogenide comprising zinc, selenium, and sulfur, wherein the luminescent nanostructure does not comprise cadmium, Wherein at least a portion of the surface of the luminescent nanostructure comprises a second semiconductor nanocrystal, and Wherein the full width at half maximum of the maximum emission peak of green light (or light emitting nanostructure) is less than or equal to about 42nm (e.g., less than or equal to about 41nm, less than or equal to about 40nm, or less than or equal to about 39 nm). The maximum luminescence peak of green light (or luminescent nanostructure) may be greater than or equal to about 500nm or greater than or equal to about 505nm. The maximum luminescence peak for green light (or luminescent nanostructure) may be less than or equal to about 530nm, less than or equal to about 525nm, less than or equal to about 520nm, less than or equal to about 515nm, or less than or equal to about 510nm. Luminescent nanostructures may exhibit ultraviolet-visible (UV-Vis) absorption spectra with positive differential coefficient values (i.e., tangential slope) at 450 nm. The differential coefficient value may be greater than zero or greater than or equal to about 0.001. In the UV-Vis absorption spectrum of the luminescent nanostructure, the ratio of absorbance at the first absorption peak wavelength to absorbance at a wavelength of about 350nm may be greater than or equal to about 0.2:1 or greater than or equal to about 0.23:1. In the UV-Vis absorption spectrum of the luminescent nanostructure, the Valley Depth (VD) defined by the following equation may be greater than or equal to about 0.2, greater than or equal to about 0.3, greater than or equal to about 0.35, or greater than or equal to about 0.4: 1-(Abs Cereal grain /Abs First one )=VD Where Abs First one corresponds to the absorbance at the first absorption peak and Abs Cereal grain corresponds to the absorbance at the lowest point of the valley adjacent to the first absorption peak. The molar ratio of sulfur to selenium in the luminescent nanostructure may be greater than or equal to about 0.3:1 or greater than or equal to about 0.5:1. The luminescent nanostructure may include a molar ratio of sulfur to selenium greater than or equal to about 1.9:1, greater than or equal to about 2:1, greater than or equal to about 2.01:1, greater tha