CN-115084364-B - Terahertz nerve synapse memristor device and preparation method thereof

CN115084364BCN 115084364 BCN115084364 BCN 115084364BCN-115084364-B

Abstract

The invention discloses a terahertz nerve synapse memristor device and a preparation method thereof. The terahertz nerve synapse memristor comprises a substrate, an active region formed on the substrate, two electrodes, a plurality of electrodes and a terahertz nerve morphology calculation function, wherein the two electrodes are in an interdigital shape and comprise a test part and finger parts, the test parts of the two electrodes are respectively formed on two sides of the active region, the finger parts are arranged on the active region in a staggered mode at a certain interval, the distance between the adjacent finger parts is controlled to be in a nanometer level, the two electrodes are respectively used as a front end and a rear end of a nerve synapse, a high-frequency voltage signal is applied to the front end of the synapse and used as an excitation source of the nerve synapse, and the current signal response of the rear end of the synapse is collected, so that the terahertz nerve morphology calculation function is realized.

Inventors

WANG TIANYU
MENG JIALIN
HE ZHENYU
CHEN LIN
SUN QINGQING
ZHANG WEI

Assignees

复旦大学

Dates

Publication Date: 20260508
Application Date: 20220531

Claims (8)

1. A terahertz nerve synapse memristor device is characterized in that, Comprising the following steps: A substrate; an active region formed on the substrate; The two electrodes are interdigital and comprise a test part and finger parts, the test parts of the two electrodes are respectively formed at two sides of the active area, the finger parts are staggered on the active area at a certain interval, and the spacing between the adjacent finger parts is controlled at the nanometer level; the two electrodes are respectively used as the front end and the rear end of the nerve synapse, a high-frequency voltage signal is applied to the front end of the synapse as an excitation source of the nerve synapse, the current signal response of the rear end of the synapse is collected, thereby realizing the terahertz nerve morphology calculation function, The principle of realizing high-speed response of the device is that the formation and fracture of an oxygen vacancy conduction channel under high-frequency voltage are mainly divided into four phases, wherein the first phase is that when a positive voltage is applied to an electrode serving as a front end of a synapse, oxygen vacancies start to accumulate, but no continuous channel is formed, so that the device is in a high-resistance state, the second phase is that the positive voltage is continuously applied to the electrode serving as the front end of the synapse, the oxygen vacancies between the positive electrode and the negative electrode are gradually connected to form a conduction channel, the device is in a low-resistance state, the third phase is that when a negative voltage is applied to the electrode serving as the front end of the synapse, a part of oxygen vacancies are combined with oxygen ions, the oxygen vacancy conduction filaments fracture, the conductivity of the device is reduced, and the device is in a high-resistance state, and the fourth phase is that when a positive voltage is applied to the electrode serving as the front end of the synapse, the oxygen vacancies again accumulate to form the conduction channel, and the device is restored to the low-resistance state.
2. The terahertz neurite memristor device according to claim 1, wherein, The material of the active region is SiO 2 ,Si 3 N 4 ,Al 2 O 3 or SnO 2 .
3. The terahertz neurite memristor device according to claim 1, wherein, The length of the active region is 30 nm-80 nm, and the width of the active region is 20 nm-80 nm.
4. The terahertz neurite memristor device according to claim 1, wherein, The electrode is made of Al, au, pt or Ag.
5. A preparation method of a terahertz nerve synapse memristor device is characterized in that, The method comprises the following steps: preparing a substrate; growing a functional layer on the substrate, and forming an active region by photoetching; Forming two interdigital electrodes in the active region, wherein the interdigital electrodes comprise a test part and finger parts, the test parts of the two electrodes are respectively formed at two sides of the active region, the finger parts are staggered on the active region at a certain interval, and the interval between the adjacent finger parts is controlled at a nano level; the two electrodes are respectively used as the front end and the rear end of the nerve synapse, a high-frequency voltage signal is applied to the front end of the synapse as an excitation source of the nerve synapse, the current signal response of the rear end of the synapse is collected, thereby realizing the terahertz nerve morphology calculation function, The principle of realizing high-speed response of the device is that the formation and fracture of an oxygen vacancy conduction channel under high-frequency voltage are mainly divided into four phases, wherein the first phase is that when a positive voltage is applied to an electrode serving as a front end of a synapse, oxygen vacancies start to accumulate, but no continuous channel is formed, so that the device is in a high-resistance state, the second phase is that the positive voltage is continuously applied to the electrode serving as the front end of the synapse, the oxygen vacancies between the positive electrode and the negative electrode are gradually connected to form a conduction channel, the device is in a low-resistance state, the third phase is that when a negative voltage is applied to the electrode serving as the front end of the synapse, a part of oxygen vacancies are combined with oxygen ions, the oxygen vacancy conduction filaments fracture, the conductivity of the device is reduced, and the device is in a high-resistance state, and the fourth phase is that when a positive voltage is applied to the electrode serving as the front end of the synapse, the oxygen vacancies again accumulate to form the conduction channel, and the device is restored to the low-resistance state.
6. The method for manufacturing a terahertz neurite memristor device according to claim 5, The material of the active region is SiO 2 ,Si 3 N 4 ,Al 2 O 3 or SnO 2 .
7. The method for manufacturing a terahertz neurite memristor device according to claim 5, The length of the active region is 30 nm-80 nm, and the width of the active region is 20 nm-80 nm.
8. The method for manufacturing a terahertz neurite memristor device according to claim 5, The step of forming the active region by photoetching specifically comprises the following steps: Defining an active region on the functional layer using electron beam lithography; Spinning photoresist in two steps in the active area, wherein the spin coating parameters in the first step are 500-800 rpm, the spin coating time is 5-30 seconds, the spin coating parameters in the second step are 3000-5000 rpm, the spin coating time is 40-1 min and 30 seconds, and the photoresist is baked by a hot plate at 120-180 ℃ for 1-10 minutes; and taking the photoresist as a mask, and removing the functional layer of the part which is not protected by the photoresist by dry etching to form an active region.

Description

Terahertz nerve synapse memristor device and preparation method thereof Technical Field The invention belongs to the technical field of semiconductors, and particularly relates to a terahertz nerve synapse memristor device and a preparation method thereof. Background The neuromorphic computation is used as an efficient computing mode, so that the bottleneck of a traditional von neumann computing architecture can be broken, and particularly, the functions of a storage unit and a computing unit are integrated, so that extra energy consumption is avoided, and the computing efficiency is improved. The enhancement and optimization of the speed and the power consumption plays a vital role in improving the computing energy efficiency of the whole system by taking the nerve synapse memristor as a key element. The nerve synapse response frequency in the human brain is 100HZ, and various complex calculation tasks and vital activities can be completed efficiently. Inspired by the human brain, the construction of the bionic nerve synapse device has the potential of realizing intelligent computation similar to the human brain. However, the response frequency of conventional neurosynaptic devices is 10hz to 1khz, which is limited by the fabrication process and device structure. In order to further improve the computational energy efficiency of the device, the development of high-frequency nerve morphology devices has become the development direction of the next generation brain-like computation. The terahertz wave frequency band is 1000GHZ, and the response speed of the corresponding device is extremely high. However, terahertz devices are mostly used in the fields of wireless communication, security systems and the like, and are not reported in the field of neuromorphic computation. The terahertz nerve synapse device can be developed to greatly improve the operation speed, and a high-speed bionic synapse and a computing system far exceeding the human brain are obtained, so that the terahertz nerve synapse device has excellent application prospects. On the other hand, with the development of moore's law, the device size is continually shrinking and approaching physical limits, and devices with nanoscale dimensions are becoming indistinct. The device is prepared into planar nanometer size, which is not only beneficial to improving the integration density of a semiconductor circuit, but also is more suitable for being applied to terahertz nerve morphology devices. Disclosure of Invention In order to solve the problems, the invention discloses a terahertz nerve synapse memristor device which comprises a substrate, an active region formed on the substrate, two electrodes which are interdigital and comprise a test part and finger parts, wherein the test parts of the two electrodes are respectively formed on two sides of the active region, the finger parts are staggered on the active region at a certain interval, the distance between the adjacent finger parts is controlled at a nanometer level, the two electrodes are respectively used as a front end and a rear end of a nerve synapse, a high-frequency voltage signal is applied to the front end of the synapse and used as an excitation source of the nerve synapse, and the current signal response of the rear end of the synapse is collected, so that the terahertz nerve morphology calculation function is realized. In the terahertz nerve synapse memristor device of the present invention, preferably, the active region is made of SiO 2,Si3N4,Al2O3 or SnO 2. In the terahertz nerve synapse memristor device, preferably, the length of the active region is 30 nm-80 nm, and the width is 20 nm-80 nm. In the terahertz nerve synapse memristor device of the present invention, preferably, the electrode is made of Al, au, pt or Ag. The invention also discloses a preparation method of the terahertz nerve synapse memristor device, which comprises the steps of preparing a substrate, growing a functional layer on the substrate, forming an active region by photoetching, forming two interdigital electrodes in the active region, wherein the two interdigital electrodes comprise a test part and a finger part, the test parts of the two electrodes are respectively formed on two sides of the active region, the finger parts are staggered on the active region at a certain interval, the interval between the adjacent finger parts is controlled at a nanometer level, the two electrodes are respectively used as the front end and the rear end of a nerve synapse, a high-frequency voltage signal is applied to the front end of the synapse as an excitation source of the nerve synapse, and the current signal response of the rear end of the synapse is acquired, so that the terahertz nerve morphology calculation function is realized. In the preparation method of the terahertz nerve synapse memristor device, preferably, the active region is made of SiO 2,Si3N4,Al2O3 or SnO 2. In the preparation method of the terahertz nerve