CN-115084378-B - Light-operated active adaptive organic transistor, preparation method and application

CN115084378BCN 115084378 BCN115084378 BCN 115084378BCN-115084378-B

Abstract

The invention relates to a light-operated active adaptive organic transistor, a preparation method and application thereof, belonging to the field of organic bioelectronics and being used for solving the technical problem that the design of an integrated sensor and a logic circuit can lead to the complexity of a sensing control circuit, wherein the light-operated active adaptive organic transistor comprises a semiconductor interlayer; the semiconductor intermediate layer comprises a light sensing layer and a carrier capturing layer, wherein the light sensing layer is used for sensing a light signal and generating photo-generated carriers, the carrier capturing layer is used for capturing the photo-generated carriers, and the semiconductor intermediate layer is used for adjusting the decay time constant of the output current of the adaptive organic transistor according to the brightness of the light signal. The technical scheme provided by the invention can improve the applicability of the electronic device to simulating organism vision.

Inventors

DI ZHONGAN
HE ZIHAN
SHEN HONGGUANG
YE DEKAI
LIU LIYAO
DAI XIAOJUAN
ZHU DAOBEN

Assignees

中国科学院化学研究所

Dates

Publication Date: 20260512
Application Date: 20210315

Claims (10)

1. The light-operated active adaptive organic field effect transistor is characterized by comprising a semiconductor intermediate layer, wherein the semiconductor intermediate layer comprises a light-sensitive layer and a carrier capturing layer; The light sensing layer is used for sensing light signals and generating photo-generated carriers; the carrier trapping layer is used for trapping the photogenerated carriers; The semiconductor intermediate layer is used for adjusting the decay time constant of the output current of the optically controlled active adaptive organic field effect transistor according to the brightness of the optical signal.
2. The organic field-effect transistor of claim 1, wherein, The material of the carrier capturing layer comprises at least one of polyvinyl alcohol, polyacrylonitrile and parylene C.
3. The organic field-effect transistor of claim 1, wherein, The photoinduction layer is a bulk heterojunction, the donor material of the bulk heterojunction comprises a polythiophene system material and a pyrrolopyrrole diketone material, and the acceptor material of the bulk heterojunction comprises a fullerene material; The donor material is one of PBTTT and its derivative, P3HT and its derivative, DPP-DTT and its derivative and PDPP T and its derivative; The acceptor material is specifically PCBM and derivatives thereof.
4. An organic field effect transistor according to claim 3 wherein the photo-sensing layer is made of PDPP T and PCBM, the mass ratio of PDPP3T to PCBM is 1:2-2:1, or the photo-sensing layer is made of P3HT and PCBM, the mass ratio of P3HT and PCBM is 1:2-2:1.
5. The organic field effect transistor of claim 1, wherein the organic field effect transistor further comprises: an organic semiconductor layer; the organic semiconductor layer is a bulk heterojunction, the donor material of the bulk heterojunction comprises a polythiophene system material and a pyrrolopyrrole diketone material, and the acceptor material of the bulk heterojunction comprises a fullerene material; The donor material is one of PBTTT and its derivative, P3HT and its derivative, DPP-DTT and its derivative and PDPP T and its derivative; The acceptor material is specifically PCBM and derivatives thereof.
6. The organic field-effect transistor according to claim 5, wherein the organic semiconductor layer is made of PDPP T and PCBM, the mass ratio of PDPP3T to PCBM is 1:2-2:1, or the organic semiconductor layer is made of P3HT and PCBM, and the mass ratio of P3HT to PCBM is 1:2-2:1.
7. The organic field-effect transistor of claim 5, wherein, The thickness of the semiconductor intermediate layer is 10 nm-100 nm; The thickness of the organic semiconductor layer is 10 nm-100 nm.
8. An organic field-effect transistor as claimed in any of claims 1 to 7, wherein, The organic field effect transistor further comprises a substrate, a gate electrode, a lower insulating layer, an upper insulating layer, a source electrode and a drain electrode which are positioned on the organic semiconductor layer, wherein the substrate, the gate electrode, the lower insulating layer, the semiconductor intermediate layer, the upper insulating layer and the organic semiconductor layer are sequentially arranged from bottom to top.
9. A method for preparing an optically controlled active adaptive organic field effect transistor, for preparing an organic field effect transistor according to any one of claims 1 to 8, comprising: Step1, providing a substrate, and preparing a gate electrode on the substrate; step 2, preparing a lower insulating layer on the gate electrode; step 3, preparing a semiconductor intermediate layer on the lower insulating layer; Step 4, preparing an upper insulating layer on the semiconductor intermediate layer; step 5, preparing an organic semiconductor layer on the upper insulating layer; and 6, evaporating a source electrode and a drain electrode on the organic semiconductor layer to obtain the light-operated adaptive organic field effect transistor.
10. The use of the optically controlled actively adaptive organic field effect transistor according to any one of claims 1 to 8 or the optically controlled actively adaptive organic field effect transistor according to claim 9 in simulating the vision of an organism.

Description

Light-operated active adaptive organic transistor, preparation method and application Technical Field The invention relates to the field of organic bioelectronics, in particular to a light-operated active adaptive organic transistor, a preparation method and application thereof. Background In recent years, with the rapid development of flexible bionic devices and artificial intelligence, novel flexible electronic devices are developed to simulate the visual adaptation behaviors of organisms, and the flexible electronic devices have very important scientific significance and application prospects. In order to simulate the process, people develop various self-adaptive optical control systems through the design of integrated sensors and logic circuits, and the self-adaptive optical control systems are widely applied to modern electronic equipment, for example, a mobile phone display screen can actively change the display output according to different environment brightness. However, the design of the integrated sensor and logic circuit may result in a complex sensing control circuit, and therefore requires sufficient space to set up the circuit, thereby reducing the applicability of the electronics to simulate the vision of a living being. Disclosure of Invention In view of the above analysis, the present invention aims to provide a light-operated active adaptive organic transistor, a preparation method and an application thereof, so as to improve the applicability of an electronic device to simulating the vision of a living body. The aim of the invention is mainly realized by the following technical scheme: In a first aspect, an embodiment of the present invention provides an optically controlled active adaptive organic field effect transistor, including a semiconductor intermediate layer, wherein the semiconductor intermediate layer includes a light sensing layer and a carrier capturing layer; The light sensing layer is used for sensing light signals and generating photo-generated carriers; the carrier trapping layer is used for trapping the photogenerated carriers; the semiconductor intermediate layer is used for adjusting the decay time constant of the output current of the adaptive organic transistor according to the brightness of the optical signal. Further, the material of the carrier capturing layer comprises at least one of polyvinyl alcohol, polyacrylonitrile and parylene C. Further, the light sensing layer is a bulk heterojunction, the donor material of the bulk heterojunction comprises a polythiophene system material and a pyrrolopyrrole diketone material, and the acceptor material of the bulk heterojunction comprises a fullerene material; The donor material is one of PBTTT and its derivative, P3HT and its derivative, DPP-DTT and its derivative and PDPP T and its derivative; The acceptor material is specifically PCBM and derivatives thereof. Further, the material of the light sensing layer is PDPP T and PCBM, the mass ratio of PDPP3T and PCBM is 1:2-2:1, or the material of the light sensing layer is P3HT and PCBM, and the mass ratio of P3HT and PCBM is 1:2-2:1. Further, the organic field effect transistor further comprises an organic semiconductor layer; the organic semiconductor layer is a bulk heterojunction, the donor material of the bulk heterojunction comprises a polythiophene system material and a pyrrolopyrrole diketone material, and the acceptor material of the bulk heterojunction comprises a fullerene material; The donor material is one of PBTTT and its derivative, P3HT and its derivative, DPP-DTT and its derivative and PDPP T and its derivative; The acceptor material is specifically PCBM and derivatives thereof. Further, the organic semiconductor layer is made of PDPP T and PCBM, the mass ratio of PDPP3T to PCBM is 1:2-2:1, or the organic semiconductor layer is made of P3HT and PCBM, and the mass ratio of P3HT to PCBM is 1:2-2:1. Further, the thickness of the semiconductor intermediate layer is 10 nm-100 nm; the thickness of the organic semiconductor layer is 10 nm-100 nm. Further, the organic field effect transistor further comprises a substrate, a gate electrode, a lower insulating layer, an upper insulating layer, a source electrode and a drain electrode which are positioned on the organic semiconductor layer, wherein the substrate, the gate electrode, the lower insulating layer, the semiconductor intermediate layer, the upper insulating layer and the organic semiconductor layer are sequentially arranged from bottom to top. Further, when the brightness value of the optical signal is smaller than 100 cd-m -2, adjusting the decay time constant of the optical signal to be larger than 100s; adjusting the decay time constant of the optical signal to be between 100s and 1s when the brightness value of the optical signal is between 10 2cd·m-2 and 10 4cd·m-2; When the brightness value of the optical signal is greater than 10 4cd·m-2, the decay time constant of the optical signal is adjusted to