CN-115101668-B - Flexible reconfigurable nerve element and preparation method thereof

CN115101668BCN 115101668 BCN115101668 BCN 115101668BCN-115101668-B

Abstract

The invention discloses a flexible reconfigurable nerve element device and a preparation method thereof. The flexible reconfigurable nerve element device comprises a flexible substrate, a bottom electrode, a two-dimensional semiconductor nano sheet layer, a high-k hafnium-based oxide dielectric layer and a top electrode, wherein the bottom electrode is an inert metal and is formed on the flexible substrate, the two-dimensional semiconductor nano sheet layer is formed on the bottom electrode, the high-k hafnium-based oxide dielectric layer is formed on the two-dimensional semiconductor nano sheet layer, the top electrode is an active metal and is formed on the high-k hafnium-based oxide dielectric layer, the migration and accumulation processes of metal ions in the top electrode are changed through applying voltage pulses with different magnitudes on the top electrode, the strength of conductive filaments in the functional layer is controlled, the switching of the device between a volatile nerve element and a nonvolatile nerve synapse is realized, and the reconfiguration function is realized in the same device.

Inventors

WANG TIANYU
MENG JIALIN
CHEN LIN
SUN QINGQING
ZHANG WEI

Assignees

复旦大学

Dates

Publication Date: 20260508
Application Date: 20220704

Claims (6)

1. A flexible reconfigurable neural element device is characterized in that, Comprising the following steps: A flexible substrate; a bottom electrode, which is an inert metal, formed on the flexible substrate; a two-dimensional semiconductor nano-sheet layer formed on the bottom electrode; a high-k hafnium-based oxide dielectric layer formed on the two-dimensional semiconductor nanoplatelets; a top electrode, which is an active metal, formed on the high-k hafnium-based oxide dielectric layer, By applying voltage pulses with different magnitudes on the top electrode, the migration and accumulation process of metal ions in the top electrode is changed, the strength of conductive filaments in the functional layer is controlled, the switching of the device between volatile neurons and nonvolatile nerve synapses is realized, the reconstruction function is realized in the same device, The high-k hafnium-based oxide dielectric layer is HfTaO x ,HfAlO x ,HfSiO x ,HfTiO x , The two-dimensional semiconductor nano-sheet layer is WS 2 , MoS 2 , ReS 2 , WSe 2 , MoSe 2 , ReSe 2 ,MoTe 2 .
2. The flexible reconfigurable neural device of claim 1, it is characterized in that the method comprises the steps of, The bottom electrode is Pd, pt, al and Au.
3. The flexible reconfigurable neural device of claim 1, it is characterized in that the method comprises the steps of, And the top electrode Ag, cu and Ti.
4. A method for preparing a flexible reconfigurable nerve component is characterized in that, The method comprises the following steps: forming an inert metal as a bottom electrode on a flexible substrate; forming a two-dimensional semiconductor nano-sheet layer on the bottom electrode; forming a high-k hafnium-based oxide dielectric layer on the two-dimensional semiconductor nano-sheet layer; Forming active metal as a top electrode on the high-k hafnium-based oxide dielectric layer, By applying voltage pulses with different magnitudes on the top electrode, the migration and accumulation process of metal ions in the top electrode is changed, the strength of conductive filaments in the functional layer is controlled, the switching of the device between volatile neurons and nonvolatile nerve synapses is realized, the reconstruction function is realized in the same device, The high-k hafnium-based oxide dielectric layer is HfTaO x ,HfAlO x ,HfSiO x ,HfTiO x , The two-dimensional semiconductor nano-sheet layer is WS 2 , MoS 2 , ReS 2 , WSe 2 , MoSe 2 ,ReSe 2 ,MoTe 2 .
5. The method of manufacturing a flexible reconfigurable neural device of claim 4, The bottom electrode is Pd, pt, al and Au.
6. The method of manufacturing a flexible reconfigurable neural device of claim 4, And the top electrode Ag, cu and Ti.

Description

Flexible reconfigurable nerve element and preparation method thereof Technical Field The invention relates to the technical field of semiconductors, in particular to a flexible reconfigurable neuron device and a preparation method thereof. Background The human brain is a high-efficiency computing system, and the neural network plays an indispensable role, so that the hot tide of the neuromorphic computation is successfully initiated. The basic units in biological neural networks are neurons, and the neurons are connected by synapses. The neural network comprises 10 12 neurons and 10 15 nerve synapses, and plays an important role in the process of neuromorphic calculation. The nerve synapse can generate stable and adjustable weight under the excitation of action potential, so that high-performance nerve morphology calculation is realized. The neurons can integrate and process the action potential signals of the previous stage, so that the release of action potential of the next stage is realized, and the method is important for the calculation of the impulse neural network. In order to achieve efficient neuromorphic calculations like the human brain, it is necessary to simulate biological synapses and neurons with electronics. The memristor-based neuromorphic electronic device has the natural advantage of simulating biological synapses and neurons, and structures at two ends can respectively correspond to the front end and the rear end of the nerve synapses, so that the neuromorphic electronic device has structural similarity with a biological system. However, due to the different properties of biological synapses and neurons, it is often necessary to use different material systems and device structures to accomplish this. The simulation of biological synapses requires excellent memory performance and continuously adjustable conductance states, requiring conductive filaments of memristors to be strong enough to form a non-volatile conductance modulation. While the simulation of neurons requires volatile threshold transition behavior, the conductive filaments of memristors are required to be connected weakly to achieve immediate response. Electronic synapses and neurons based on different material systems and device structures face the problems of current matching, heterogeneous chip integration and the like, and the integration and development of the neuromorphic computing chip are limited. The reconfigurable nerve element device constructed by the same device structure and material system can solve the problem to a great extent, can realize multiple functions, can improve the integration level of chips and save cost, and has great application potential in the aspect of next-generation low-power-consumption nerve morphology calculation. The flexible electronic has the advantages of low cost, light weight, portability, bending resistance and the like, and is very suitable for being applied to wearable application scenes. However, due to the portability requirements of their operating scenarios, complex circuitry and excessive device combinations need to be avoided as much as possible. The chip space can be saved by realizing multiple functions on the same device, and the utilization rate and the flexibility of a single device are improved. Therefore, the development of flexible electronic devices with reconfigurable functions as an effective path has become a new development wave in the next generation wearable field. Disclosure of Invention The invention discloses a flexible reconfigurable nerve cell device which comprises a flexible substrate, a bottom electrode, a two-dimensional semiconductor nano sheet layer, a high-k hafnium-based oxide dielectric layer and a top electrode, wherein the bottom electrode is an inert metal and is formed on the flexible substrate, the two-dimensional semiconductor nano sheet layer is formed on the bottom electrode, the high-k hafnium-based oxide dielectric layer is formed on the two-dimensional semiconductor nano sheet layer, the top electrode is an active metal and is formed on the high-k hafnium-based oxide dielectric layer, the migration and accumulation processes of metal ions in the top electrode are changed through applying voltage pulses with different sizes on the top electrode, the strength of conductive filaments in a functional layer is controlled, the switching of the device between a volatile nerve cell and a nonvolatile nerve synapse is realized, and the reconfiguration function is realized in the same device. In the flexible reconfigurable neuron device of the present invention, preferably, the bottom electrode is Pd, pt, al, au. In the flexible reconfigurable neural element device of the present invention, preferably, the two-dimensional semiconductor nano-sheet layer is WS 2,MoS2,ReS2,WSe2,MoSe2,ReSe2,MoTe2. In the flexible reconfigurable neuron device of the present invention, preferably, the high K hafnium-based oxide dielectric layer is HfTaO x,HfAlOx,Hf