CN-115116514-B - Current-type sensitive amplifier circuit and process mismatch elimination method

CN115116514BCN 115116514 BCN115116514 BCN 115116514BCN-115116514-B

Abstract

The application discloses a current-type sensitive amplifier circuit and a process mismatch elimination method, wherein the current sampling circuit comprises a current sampling circuit, the current sampling circuit comprises a first charge-discharge module, a passage switching module, a first precharge current module and a second precharge current module, one end of the first precharge current module is used for being connected with reference current of a resistance change memory unit circuit, one end of the second precharge current module is used for being connected with unit current of the resistance change memory unit circuit, the passage switching module is used for conducting the first precharge current module with a first end of the first charge-discharge module and conducting the second precharge current module with a second end of the first charge-discharge module to form a current sampling stage, and the passage switching module is also used for conducting the first precharge current module with the second end of the first charge-discharge module and conducting the second precharge current module with the first end of the first charge-discharge module to form a current amplifying stage. The sensing margin of the existing resistive random access memory can be improved.

Inventors

YANG JIANGUO
WANG QIAO

Assignees

中国科学院微电子研究所

Dates

Publication Date: 20260505
Application Date: 20210318

Claims (8)

1. A current-type sensitive amplifier circuit is characterized by comprising a current sampling circuit; The current sampling circuit comprises a first charge-discharge module, a path switching module, a first precharge current module and a second precharge current module, wherein one end of the first precharge current module is used for being connected with reference current of a resistance change memory unit circuit, one end of the second precharge current module is used for being connected with unit current of the resistance change memory unit circuit, and the other ends of the first precharge current module and the second precharge current module are electrically connected and then used for being connected with a high level; The path switching module is used for conducting the first pre-charging current module and the first end of the first charging and discharging module, and conducting the second pre-charging current module and the second end of the first charging and discharging module to form a current sampling stage; The path switching module is further configured to conduct the first precharge current module with the second end of the first charge-discharge module, and conduct the second precharge current module with the first end of the first charge-discharge module, so as to form a current amplifying stage; A latch comparator including two inverter units; A switch is arranged between the input end and the output end of the reverser unit, and the switch is used for communicating the input end and the output end of the reverser unit when the switch is closed so as to form an adaptive comparator stage; the latch comparator further comprises a second charge-discharge module, one end of the second charge-discharge module is electrically connected with the input end of one inverter unit, and the other end of the second charge-discharge module is electrically connected with the output end of the other inverter unit.
2. The current-mode sense amplifier circuit of claim 1, wherein the first charge-discharge module comprises a capacitor.
3. The current-mode sense amplifier circuit of claim 1, wherein the first and second precharge current modules each comprise a precharge MOS transistor; In the current sampling stage, the path switching module is used for controlling the reference current of the pre-charge MOS tube drain electrode of the first pre-charge current module connected to the resistance change memory unit circuit, the unit current of the pre-charge MOS tube drain electrode of the second pre-charge current module connected to the resistance change memory unit circuit, the high level connected after the pre-charge MOS tube source electrode of the first pre-charge current module and the pre-charge MOS tube source electrode of the second pre-charge current module are electrically connected, the pre-charge MOS tube grid electrode of the first pre-charge current module is electrically connected to the second end of the first charge and discharge module, and the pre-charge MOS tube grid electrode of the second pre-charge current module is electrically connected to the first end of the first charge and discharge module; In the current amplifying stage, the channel switching module is configured to control the gate of the pre-charge MOS transistor of the first pre-charge current module to be electrically connected to the second end of the first charge/discharge module, and the gate of the pre-charge MOS transistor of the second pre-charge current module to be electrically connected to the first end of the first charge/discharge module.
4. A current-mode sense amplifier circuit according to claim 3, wherein the path switching module comprises a plurality of switches; A switch is arranged between the drain electrode of the pre-charge MOS tube of the first pre-charge current module and the first end of the first charge-discharge module, and a switch is arranged between the drain electrode of the pre-charge MOS tube of the second pre-charge current module and the second end of the first charge-discharge module; A switch is arranged between the pre-charge MOS tube grid electrode of the first pre-charge current module and the first end of the first charge-discharge module, and a switch is arranged between the pre-charge MOS tube grid electrode of the first pre-charge current module and the second end of the first charge-discharge module; a switch is arranged between the pre-charge MOS tube grid electrode of the second pre-charge current module and the first end of the first charge-discharge module, and a switch is arranged between the pre-charge MOS tube grid electrode of the second pre-charge current module and the second end of the first charge-discharge module.
5. The current-mode sense amplifier circuit of claim 4, wherein a switch is disposed between the input of the inverter unit and ground, the switch when closed being operable to ground the input of the inverter unit to form a precharge phase; A switch is provided between the output of one of the inverter units and the input of the other inverter unit, the switch being for closing during the precharge phase, the current sampling phase, the current amplifying phase and the data readout phase.
6. The current-sense amplifier circuit of claim 5, wherein the input of one of the inverter units is for accessing a reference current of the resistive memory cell circuit during the current sampling phase and the current amplifying phase, and the input of the other of the inverter units is for accessing a cell current of the resistive memory cell circuit during the current sampling phase and the current amplifying phase; The input of one of the inverter units is further adapted to access a reference current of the resistive memory cell circuit outside the current sampling phase and the current amplifying phase, and the input of the other of the inverter units is further adapted to access a cell current of the resistive memory cell circuit outside the current sampling phase and the current amplifying phase to form a data readout phase.
7. A process mismatch cancellation method for a current-mode sense amplifier circuit, applied to the current-mode sense amplifier circuit according to any one of claims 1 to 6, comprising: the input end and the output end of the inverter units are communicated, and the second charge-discharge module is charged, so that tripping voltages of the two inverter units are stored at two ends of the second charge-discharge module to form an adaptive comparator stage; The method comprises the steps of conducting a first pre-charging current module with a first end of a first charging and discharging module through a control path switching module, connecting the first end of the first charging and discharging module to a reference current of a resistance change memory unit circuit, conducting a second pre-charging current module with a second end of the first charging and discharging module, and connecting the second end of the first charging and discharging module to a unit current of the resistance change memory unit circuit, so that the first pre-charging current module charges the first end of the first charging and discharging module, and the second pre-charging current module charges the second end of the first charging and discharging module to form a current sampling stage; and controlling the passage switching module to conduct the first pre-charging current module with the second end of the first charging and discharging module and conduct the second pre-charging current module with the first end of the first charging and discharging module to form a current amplifying stage.
8. The process mismatch cancellation method of a current sense amplifier circuit according to claim 7, further comprising, after said adaptive comparator stage is formed: Connecting said input terminals of both said inverter units to ground so that said output terminals of both said inverter units are precharged to 0 and connecting said output terminal of either said inverter unit to said input terminal of the other said inverter unit so as to adapt the performance parameters of both said inverter units to form a precharge phase; after the current amplification stage is formed, further comprising: The output end of one inverter unit is conducted with the input end of the other inverter unit, the input end of one inverter unit is connected to the first end of the first charge-discharge module, the input end of the other inverter unit is connected to the second end of the first charge-discharge module, when the unit current is larger than the reference current, the potential of the first end of the first charge-discharge module is pulled to a high level, the potential of the second end of the first charge-discharge module is pulled to 0, and a storage signal is output to the resistance change memory unit circuit to form a data reading stage.

Description

Current-type sensitive amplifier circuit and process mismatch elimination method Technical Field The application relates to the technical field of circuits, in particular to a current-type sensitive amplifier circuit and a process mismatch elimination method. Background In recent years, the resistive random access memory (RRAM, RESISTIVE RANDOM ACCESS MEMORY) has been increasingly used due to advantages of high speed, simple structure, compatibility with CMOS process, and good scalability. However, as the scale of integrated circuits increases, the device size and operating voltage continue to decrease, resulting in a decrease in sensing margin (SM, sensing Margin) of the resistive random access memory. Therefore, improving the sensing margin of the resistive random access memory has become one of the important issues of research. Disclosure of Invention The embodiment of the application provides a current-type sensitive amplifier circuit and a process mismatch elimination method, which can improve the sensing margin of the existing resistive random access memory. In a first aspect, a current sense amplifier circuit includes a current sampling circuit; The current sampling circuit comprises a first charge-discharge module, a path switching module, a first precharge current module and a second precharge current module, wherein one end of the first precharge current module is used for being connected with reference current of a resistance change memory unit circuit, one end of the second precharge current module is used for being connected with unit current of the resistance change memory unit circuit, and the other ends of the first precharge current module and the second precharge current module are electrically connected and then used for being connected with a high level; The path switching module is used for conducting the first pre-charging current module and the first end of the first charging and discharging module, and conducting the second pre-charging current module and the second end of the first charging and discharging module to form a current sampling stage; The path switching module is further configured to conduct the first precharge current module with the second end of the first charge-discharge module, and conduct the second precharge current module with the first end of the first charge-discharge module, so as to form a current amplifying stage. In one possible embodiment, the first charge-discharge module includes a capacitor. In one possible implementation, the first and second precharge current modules each include a precharge MOS transistor; In the current sampling stage, the path switching module is used for controlling the reference current of the pre-charge MOS tube drain electrode of the first pre-charge current module connected to the resistance change memory unit circuit, the unit current of the pre-charge MOS tube drain electrode of the second pre-charge current module connected to the resistance change memory unit circuit, the high level connected after the pre-charge MOS tube source electrode of the first pre-charge current module and the pre-charge MOS tube source electrode of the second pre-charge current module are electrically connected, the pre-charge MOS tube grid electrode of the first pre-charge current module is electrically connected to the second end of the first charge and discharge module, and the pre-charge MOS tube grid electrode of the second pre-charge current module is electrically connected to the first end of the first charge and discharge module; In the current amplifying stage, the channel switching module is configured to control the gate of the pre-charge MOS transistor of the first pre-charge current module to be electrically connected to the second end of the first charge/discharge module, and the gate of the pre-charge MOS transistor of the second pre-charge current module to be electrically connected to the first end of the first charge/discharge module. In one possible embodiment, the path switching module includes a plurality of switches; A switch is arranged between the drain electrode of the pre-charge MOS tube of the first pre-charge current module and the first end of the first charge-discharge module, and a switch is arranged between the drain electrode of the pre-charge MOS tube of the second pre-charge current module and the second end of the first charge-discharge module; A switch is arranged between the pre-charge MOS tube grid electrode of the first pre-charge current module and the first end of the first charge-discharge module, and a switch is arranged between the pre-charge MOS tube grid electrode of the first pre-charge current module and the second end of the first charge-discharge module; a switch is arranged between the pre-charge MOS tube grid electrode of the second pre-charge current module and the first end of the first charge-discharge module, and a switch is arranged between the pre-charge MOS tube grid electrode of the sec