CN-115116863-B - Chip heat radiation structure and preparation method thereof

CN115116863BCN 115116863 BCN115116863 BCN 115116863BCN-115116863-B

Abstract

The invention relates to a chip heat dissipation structure and a preparation method thereof, wherein the preparation method of the chip heat dissipation structure comprises the following steps of thinning a refrigeration sheet so as to enable a cold surface of the refrigeration sheet to be attached to a chip; the cooling device comprises a substrate, a cooling piece, a mounting groove, a packaging chip and a cooling piece, wherein the substrate is arranged on a heat dissipation piece in a penetrating way, the cooling piece is arranged in the mounting groove so that a hot surface is attached to the heat dissipation piece, the cooling surface of the cooling piece is flush with the surface of the substrate, which is opposite to the heat dissipation piece, and the cooling piece is packaged. After thinning the refrigeration piece for the cold face of refrigeration piece can with chip direct laminating contact, improves refrigeration efficiency, has also reduced the thickness of refrigeration piece, makes the refrigeration piece install in the mounting groove after can with the surface parallel and level of base plate, reduced the whole volume of chip heat radiation structure, increase the integrated level of chip heat radiation structure and relevant equipment. Meanwhile, the hot surface of the refrigerating sheet is attached to the radiating piece, so that the radiating effect and the radiating efficiency of the chip radiating structure are further improved.

Inventors

SHI YIJUN
HE ZHIYUAN
CHEN YIQIANG
HUANG YUN
CAI ZONGQI
Hui Caixin
JIANG JIE
LU GUOGUANG

Assignees

中国电子产品可靠性与环境试验研究所（（工业和信息化部电子第五研究所）（中国赛宝实验室））

Dates

Publication Date: 20260505
Application Date: 20220714

Claims (10)

1. The preparation method of the chip heat dissipation structure is characterized by comprising the following steps of: Setting a first substrate, setting a conductive structure on the first substrate, setting a semiconductor component on the conductive structure, etching the conductive structure, covering a second substrate on the semiconductor component to form a refrigerating sheet, setting an initial state of the refrigerating sheet as a packaging state and a ceramic layer in the refrigerating sheet, setting a third substrate, forming a p-GaN layer on the third substrate, etching the p-GaN layer, forming a passivation structure on the p-GaN layer, etching the passivation structure, setting an electrode structure on the passivation structure, and forming a main body of a chip; Thinning the refrigerating sheet to enable the cold face of the refrigerating sheet to be attached to the chip, wherein two opposite side faces on the refrigerating sheet are respectively a cold face and a hot face, and the ceramic layer is arranged on the cold face; the substrate is provided with a mounting groove in a penetrating way, wherein the substrate is arranged on the heat radiating piece; The cooling piece is arranged in the mounting groove so as to enable the hot surface to be attached to the radiating piece, wherein the cold surface of the cooling piece is flush with the surface of the base plate, which is opposite to the radiating piece; And packaging the chip and the refrigerating sheet.
2. The method of manufacturing a chip heat dissipating structure according to claim 1, wherein mounting the cooling fin in the mounting groove comprises: and connecting the electrode leads of the refrigerating sheet and the electrode leads of the chip to the substrate.
3. The method for manufacturing a chip heat dissipation structure according to claim 1 or 2, wherein a second substrate is provided over the semiconductor device, and further comprising: and thinning the first substrate and the second substrate.
4. The method for manufacturing a heat dissipation structure for a chip according to claim 3, wherein a conductive structure is provided on the first substrate, a semiconductor device is provided on the conductive structure, the conductive structure is etched, and a second substrate is provided on the semiconductor device to form the cooling fin, comprising: the conductive structure comprises a first conductive layer and a second conductive layer, and the semiconductor component comprises an N-type semiconductor and a P-type semiconductor; Disposing the first conductive layer on the first substrate; Growing a thermoelectric leg on the first conductive layer and performing particle doping to form the N-type semiconductor and the P-type semiconductor; etching the first conductive layer corresponding to the structures of the N-type semiconductor and the P-type semiconductor; the second conductive layer is covered on the N-type semiconductor and the P-type semiconductor, and is etched corresponding to the structures of the N-type semiconductor and the P-type semiconductor; And covering the second substrate on the N-type semiconductor and the P-type semiconductor to form the refrigerating sheet.
5. The method for manufacturing a heat dissipation structure according to claim 4, wherein the number of the N-type semiconductors and the number of the P-type semiconductors are at least two, two adjacent P-type semiconductors are arranged at intervals, each N-type semiconductor is arranged between two adjacent P-type semiconductors, and an electrical signal on one P-type semiconductor sequentially passes through the second conductive layer, the N-type semiconductor and the first conductive layer to reach the other P-type semiconductor.
6. The method of manufacturing a heat spreader structure for chips as defined in claim 1 or 2, wherein forming a passivation structure on the p-GaN layer, etching the passivation structure, and providing an electrode structure on the passivation structure, forming a body of the chip, comprises: the passivation structure comprises a first passivation layer and a second passivation layer, wherein the electrode structure comprises a grid electrode, a drain electrode and a source electrode; Forming the first passivation layer on the p-GaN layer; Etching the first passivation layer, and disposing the drain electrode and the source electrode on the first passivation layer to form an ohmic contact, and disposing a gate electrode to form a gate metal contact; Forming the second passivation layer on the first passivation layer; the second passivation layer is etched to form a metallization interconnect for the drain, the source, and the gate, forming a body of the chip.
7. The method of manufacturing a heat spreader structure according to claim 6, wherein the drain, the source, and the gate form a metallization interconnect, further comprising: and thinning the third substrate.
8. The method of manufacturing a heat dissipating structure for a chip as set forth in claim 6, wherein after forming said cooling fin and said main body forming said chip, comprising: Removing or thinning the second substrate; Bonding the third substrate and the second conductive layer; And (5) packaging is completed.
9. The method of manufacturing a heat spreader structure of a chip as defined in claim 6, wherein, The main body of the chip is a gallium nitride high electron mobility transistor.
10. A chip heat dissipation structure manufactured by the manufacturing method of the chip heat dissipation structure according to any one of claims 1 to 9, characterized in that the chip heat dissipation structure comprises: A heat sink; a base plate arranged on the heat dissipation member and provided with a mounting groove therethrough, and The cooling piece, the both sides face that is on the back of the body on the cooling piece is cold face and hot face respectively, the cold face of cooling piece is used for laminating with the chip, when the cooling piece is installed in the mounting groove, the hot face of cooling piece can with the heat dissipation piece laminating, just the cold face with the base plate is facing away from the surface parallel and level of heat dissipation piece.

Description

Chip heat radiation structure and preparation method thereof Technical Field The invention relates to the technical field of semiconductors, in particular to a chip heat dissipation structure and a preparation method thereof. Background The application field of the semiconductor refrigeration sheet is wide at present, and the electronic product developed can be effectively cooled and radiated in various aspects of medicine, military, optics, cosmetology and the like, so that the temperature of the product is always at a constant value during operation. The application method of the refrigerating sheet at the present stage mainly comprises the steps of clamping and fixing the refrigerating sheet by a screw, adhering by resin glue, welding, connecting by a soft cushion or other materials, and the like, tightly attaching the refrigerating sheet to a heating surface of the heating element by a cold surface of the refrigerating sheet, so that heat is mutually conducted to balance, and simultaneously, installing a radiator on the hot surface of the refrigerating sheet to conduct the heat to the outside. However, the volume of the refrigeration piece used at present is larger, the thickness of the device is increased to a certain extent by attaching the refrigeration piece on the surface of the device, and the cold surface of the refrigeration piece packaged by ceramic cannot be directly contacted with a chip hot spot, so that the refrigeration efficiency is reduced. Disclosure of Invention In view of the foregoing, it is desirable to provide a chip heat dissipation structure capable of improving the heat dissipation efficiency of a chip and a method for manufacturing the same. A preparation method of a chip heat dissipation structure comprises the following steps: Thinning the refrigerating sheet to enable the cold face of the refrigerating sheet to be attached to the chip, wherein two opposite side faces on the refrigerating sheet are respectively a cold face and a hot face; the substrate is provided with a mounting groove in a penetrating way, wherein the substrate is arranged on the heat radiating piece; The cooling piece is arranged in the mounting groove so that the hot surface is attached to the heat dissipation piece, wherein the cold surface of the cooling piece is flush with the surface of the base plate, which is opposite to the heat dissipation piece; And packaging the chip and the refrigerating sheet. In one embodiment, the thinning the cooling fin includes: and unsealing the refrigerating sheet and removing the ceramic layer of the refrigerating sheet, wherein the initial state of the refrigerating sheet is a packaging state, the refrigerating sheet is internally provided with the ceramic layer, and the ceramic layer is arranged on the cold surface. In one embodiment, mounting the cooling fin within the mounting slot comprises: and connecting the electrode leads of the refrigerating sheet and the electrode leads of the chip to the substrate. In one embodiment, the mounting of the cooling fin in the mounting slot further comprises: the refrigerating sheet is integrally formed on the base plate and is positioned in the mounting groove. In one embodiment, the cooling sheet is subjected to a thinning process, which further comprises: Providing a first substrate, and providing a conductive structure on the first substrate; Disposing a semiconductor component on the conductive structure and etching the conductive structure; and covering a second substrate on the semiconductor component to form the refrigerating sheet. In one embodiment, a conductive structure is disposed on the first substrate, a semiconductor component is disposed on the conductive structure, the conductive structure is etched, and a second substrate is covered on the semiconductor component to form the cooling plate, including: the conductive structure comprises a first conductive layer and a second conductive layer, and the semiconductor component comprises an N-type semiconductor and a P-type semiconductor; Disposing the first conductive layer on the first substrate; Growing a thermoelectric leg on the first conductive layer and performing particle doping to form the N-type semiconductor and the P-type semiconductor; etching the first conductive layer corresponding to the structures of the N-type semiconductor and the P-type semiconductor; the second conductive layer is covered on the N-type semiconductor and the P-type semiconductor, and is etched corresponding to the structures of the N-type semiconductor and the P-type semiconductor; And covering the second substrate on the N-type semiconductor and the P-type semiconductor to form the refrigerating sheet. In one embodiment, the number of the N-type semiconductors and the P-type semiconductors is at least two, two adjacent P-type semiconductors are arranged at intervals, each N-type semiconductor is arranged between two adjacent P-type semiconductors, and an electric signal on one P-