CN-115216724-B - Sputtering pretreatment method

Abstract

The present invention relates to a sputtering pretreatment method capable of preventing generation of burrs (burr), reducing defective rate, improving reliability of products, and shortening process time and improving productivity (Unit Per Hour; UPH) when separating a semiconductor material from a sputtering frame after performing a sputtering process on the semiconductor material, wherein an adhesive layer used in the sputtering process of the semiconductor material is processed by a laser, thereby hardening the adhesive layer.

Inventors

• ZHENG TAIYONG
• ZHENG XIANQUAN

Assignees

• 韩美半导体株式会社

Dates

Publication Date

20260505

Application Date

20220323

Priority Date

20210415

Claims (7)

1. 1. A sputtering pretreatment method for forming an electromagnetic wave shielding layer in a remaining region other than a bottom surface of a semiconductor material, the method comprising: A step of preparing a semiconductor material bonding member to be bonded with an adhesive layer of a bottom surface of the semiconductor material; Setting an adhesive layer processing region spaced apart from an adhesive region of a bottom surface of the semiconductor material to be bonded by a predetermined interval in an outer direction; a step of irradiating laser along the inner side edge of the adhesive layer processing region to process the first cutting line of the adhesive layer and then irradiating laser along the outer side edge of the adhesive layer processing region to process the second cutting line of the adhesive layer, or A step of irradiating laser along the outer side edge of the adhesive layer processing region to process the first cut of the adhesive layer after the second cut line of the adhesive layer is processed, and And irradiating the adhesive layer processing region with a laser beam to harden the adhesive layer.
2. 2. A sputtering pretreatment method for forming an electromagnetic wave shielding layer in a remaining region other than a bottom surface of a semiconductor material, the method comprising: A step of preparing a semiconductor material bonding member to be bonded with an adhesive layer of a bottom surface of the semiconductor material; Setting an adhesive layer processing region spaced apart from an adhesive region of a bottom surface of the semiconductor material to be bonded by a predetermined interval in an outer direction; a step of irradiating laser along one or more edges of the inner side edge and the outer side edge of the adhesive layer processing region, thereby processing a dicing line of the adhesive layer so that heat energy of the irradiated laser is indirectly transferred to the adhesive region to be bonded with the semiconductor material, and And irradiating the adhesive layer processing region with a laser beam to harden the adhesive layer.
3. 3. A sputter pretreatment method as recited in any one of claim 1 or 2, characterized in that, The intensity of energy irradiated per unit area of the laser light irradiated to the inner side edge is greater than the intensity of energy irradiated per unit area of the laser light irradiated to the outer side edge.
4. 4. A sputtering pretreatment method as defined in claim 3, wherein, The laser beam irradiated to the inner edge is controlled to have a slower moving speed than the laser beam irradiated to the outer edge, to increase the repetition rate of the laser beam, or to have a stronger irradiation intensity than the laser beam irradiated to the outer edge.
5. 5. The sputtering pretreatment method according to claim 1 or 4, wherein, The step of hardening the adhesive layer is to irradiate laser light in a continuous quadrangular spiral track pattern from the inside to the outside of the adhesive layer processing region.
6. 6. The sputtering pretreatment method according to claim 1 or 4, wherein the semiconductor material bonding member is, A frame coated with an adhesive layer on the upper part, or An adhesive tape provided with an adhesive layer.
7. 7. The sputtering pretreatment method according to claim 6, wherein, A through hole or a receiving groove for receiving a solder ball formed on the bottom surface of the semiconductor material is formed in the frame or the tape.

Description

Sputtering pretreatment method Technical Field The present invention relates to a sputtering pretreatment method for forming an electromagnetic wave shielding layer in a remaining region of a semiconductor material except for a bottom surface. More particularly, the present invention relates to a sputtering pretreatment method capable of preventing occurrence of burrs (burr) to reduce defective rate, improving reliability of products, and shortening process time to improve productivity (Unit Per Hour; UPH) when separating a semiconductor material from a sputtering frame after performing a sputtering process on the semiconductor material. Background Generally, a semiconductor manufacturing process is divided into a pre-process and a post-process, in which a patterning (patterning) process of etching a circuit on a wafer is performed in the pre-semiconductor process, and then the wafer is separated into small chip units in the post-process, and a packaging (packaging) process capable of safely protecting a semiconductor chip from various external stimuli is performed. In the packaging process, an EMI (electromagnetic interference; electromagnetic interference) shielding (Shield) deposition process is completed together with a conductor connection process for enabling the chip cut into a small size to transmit and receive an electrical signal, to protect the semiconductor chip from external stimuli such as chemical reaction or temperature change, and to prevent noise due to interference with an adjacent chip. Semiconductor packages manufactured by the above-described packaging are of various kinds, and recently, semiconductor materials capable of satisfying various demands, such as miniaturization, thinning, multifunction, and high integration capable of processing a large amount of information in a short time, are demanded. In the packaging process, in order to form the electromagnetic wave shielding layer to prevent noise and errors caused by electromagnetic wave interference between adjacent chips, a sputtering (sputtering) process of forming EMI (electromagnetic interference) coating layers is performed, which is to form the electromagnetic wave shielding layer on the remaining five surfaces except the bottom surface provided with the chip electrode. Fig. 1 is a view schematically showing a process of performing a sputtering process of a conventional semiconductor material, and fig. 2 is an enlarged view showing a state in which the semiconductor material of fig. 1 is adhered to an adhesive layer 11. As shown in fig. 1 (a), in the conventional sputtering process, an adhesive layer 11 for fixing a semiconductor material P is provided on the upper surface of a film 12 of a sputtering frame, and in a state where the semiconductor material P is fixed on the upper surface of the adhesive layer 11, a sputtering deposition layer 20, that is, an electromagnetic wave shielding layer is formed on five surfaces other than the bottom surface of the semiconductor material P, that is, the adhesive surface D with the adhesive layer 11. After the formation of the sputter deposition layer 20 is completed, the semiconductor material P is sucked and fixed by a vacuum suction type pickup (picker) 30 as shown in fig. 1b, and the pickup 30 is lifted and lowered to separate the semiconductor material P from the adhesive layer 11 of the sputter frame as shown in fig. 1c, and then the subsequent process is performed. The sputter deposition layer 20 is deposited by the deposition gas traveling from the upper portion to the lower portion, and at this time, the non-contact portion between the semiconductor materials P is formed by stacking the deposition substances thereon, and thus is formed to be relatively thick compared to the side surfaces of the semiconductor materials P, and is formed to be relatively thin in the lower portion of the side surfaces of the semiconductor materials P, as shown in fig. 1. Then, in this state, if the semiconductor material P is separated from the adhesive layer 11 of the sputtering frame by the pick-up 30, burrs (burr) 20a are generated while the thick portion of the bottom is lifted up together as shown in fig. 1 (c). In particular, since the sputter deposited layer 20 is formed in a circular arc shape without forming a right angle at the corner portions where the side surfaces and the middle blank region of the semiconductor material P meet, the probability of occurrence of burrs 20a becomes high when the semiconductor material P is separated and broken. In addition, by the difference between the bonding force between the sputter-deposited layer 20 and the semiconductor material P and the bonding force between the sputter-deposited layer 20 and the adhesive layer 11 exposed at the non-adhesive portion, the portion where the bonding force is relatively weak is separated first to increase the generation of burrs. Further, as shown in fig. 2, in bonding the semiconductor material P to the bonding lay