CN-115241034-B - Semiconductor processing method and semiconductor processing equipment

CN115241034BCN 115241034 BCN115241034 BCN 115241034BCN-115241034-B

Abstract

The application discloses a semiconductor process method and semiconductor process equipment, and belongs to the semiconductor process technology. The semiconductor process method comprises the steps of monitoring whether the process chamber is in an idle state or not in the process of carrying out corresponding semiconductor process treatment on a wafer in the process chamber, and carrying out chamber pretreatment operation on the process chamber every preset time if the process chamber is in the idle state, wherein the chamber pretreatment operation comprises the steps of controlling the indoor temperature of the process chamber to be a preset temperature value, introducing process gas into the process chamber, and ionizing the process gas to form plasma, wherein the process gas comprises nitrogen and does not contain fluorine. According to the technical scheme, the reduction speed of the surface resistance of the ceramic layer of the bearing device in the process chamber can be effectively delayed in the semiconductor process treatment process, and the service life of the bearing device is further prolonged.

Inventors

LI KAI
BAI FAN
WANG XIAODAN
CAO GUANGYUE
LI YIMAN
MA BING

Assignees

北京北方华创微电子装备有限公司

Dates

Publication Date: 20260512
Application Date: 20220728

Claims (10)

1. A semiconductor processing method applied to a semiconductor processing apparatus, the semiconductor processing apparatus comprising a process chamber, comprising the steps of: Monitoring whether the process chamber is in an idle state or not in the process of carrying out corresponding semiconductor process treatment on a wafer by the process chamber; And if the process chamber is in an idle state, performing chamber pretreatment operation on the process chamber every preset time, wherein the chamber pretreatment operation comprises the steps of controlling the indoor temperature of the process chamber to be a preset temperature value, introducing process gas into the process chamber, ionizing the process gas to form plasma, so as to chemically react with a polymer on the surface of a ceramic layer of the bearing device, and generating a new polymer with higher resistivity, so as to improve the adsorption force of the bearing device on the wafer, wherein the process gas comprises nitrogen element and does not contain fluorine element, and the surface of the bearing device is made of aluminum oxide.
2. The semiconductor process of claim 1, wherein the process gas comprises nitrogen and/or oxynitride.
3. The semiconductor processing method of claim 2, wherein the process gas further comprises any one or more of oxygen, argon, and helium.
4. The semiconductor processing method according to claim 1, wherein the preset temperature value is not higher than 150 ℃ and/or the operation duration of the chamber pretreatment operation is 5 s-30 s.
5. The method of claim 1, wherein if the process chamber is monitored to be in an idle state, further comprising: Monitoring the idle time of the process chamber; if the idle time is monitored to be longer than a preset threshold value, the semiconductor process is performed on a preset number of dummy wafers before the semiconductor process is performed on the wafer after the current idle state of the process chamber is finished.
6. The method of claim 5, further comprising the step of: the chamber pretreatment operation is performed on the process chamber once before each wafer and/or each dummy wafer enters the process chamber.
7. A semiconductor process device is characterized by comprising a process chamber, a working state monitoring device and a chamber pretreatment device, wherein, The process chamber is used for carrying out corresponding semiconductor process treatment on the wafer; the working state monitoring device is used for monitoring whether the process chamber is in an idle state or not in the process of corresponding semiconductor process treatment of the process chamber; The chamber pretreatment device is used for carrying out chamber pretreatment operation on the process chamber every time when the working state monitoring device monitors that the process chamber is in an idle state, wherein the chamber pretreatment operation comprises the steps of controlling the indoor temperature of the process chamber to be a preset temperature value, introducing process gas into the process chamber, ionizing the process gas in the process chamber to form plasma so as to chemically react with a polymer on the surface of a ceramic layer of the bearing device, and generating a new polymer with higher resistivity so as to improve the adsorption force of the bearing device on the wafer, the process gas comprises nitrogen elements and does not contain fluorine elements, and the surface of the bearing device is made of aluminum oxide.
8. The semiconductor processing apparatus of claim 7, wherein the chamber pretreatment device comprises a temperature control assembly, a process gas input line, and a radio frequency field assembly, wherein, The temperature control assembly is used for controlling the indoor temperature of the process chamber to be at the preset temperature value, and the preset temperature value is not higher than 150 ℃; The process gas input pipeline is communicated with the inside of the process chamber and is used for introducing the process gas into the process chamber; The radio frequency field assembly is used for loading a preset radio frequency field in the process chamber, so that the process gas forms plasma under the ionization action of the preset radio frequency field.
9. The semiconductor processing apparatus of claim 7, wherein, The working state monitoring device is also used for further monitoring the idle time of the process chamber when the process chamber is in the idle state; And the process chamber is further used for carrying out the semiconductor process treatment on a preset number of dummy wafers before the semiconductor process treatment is carried out on the wafer after the end of the current idle state of the process chamber when the working state monitoring device monitors that the idle time is longer than a preset threshold value.
10. The semiconductor processing apparatus of claim 9, wherein, The chamber pretreatment device is further used for carrying out chamber pretreatment operation on the process chamber once before each wafer and/or each dummy wafer enter the process chamber.

Description

Semiconductor processing method and semiconductor processing equipment Technical Field The application belongs to the technical field of semiconductor processes, and particularly relates to a semiconductor process method and semiconductor process equipment. Background Currently, dry etching generally processes wafers by plasma. The electrostatic chuck is used as one of the core components of the etching machine to play an irreplaceable role, wherein the electrostatic chuck has an important role of fixing the wafer, and the electrostatic chuck generates electrostatic force by applying unipolar direct current voltage to prevent the wafer from shifting in the process. During the above-mentioned processing of the product wafer in the process chamber, a large amount of polymer is generated in the chamber and deposited on the inner wall of the chamber, and this polymer releases CF-type gases (such as CF 4、CHF3、CH2F2 and C 4F8) and reacts with the ceramic layer surface (mainly made of Al 2O3) of the electrostatic chuck to generate Al x1Cx2Six3Fx4Ox5 polymer. Since the resistivity of the Al x1Cx2Six3Fx4Ox5 polymer is smaller than that of Al 2O3, when the thickness of the Al x1Cx2Six3Fx4Ox5 polymer increases with time, the surface resistance of the ceramic layer of the electrostatic chuck is greatly reduced, and the electrostatic chuck is difficult to adsorb (the phenomenon of jumping is easily caused), so that the service life of the electrostatic chuck is greatly reduced. Disclosure of Invention The embodiment of the application provides a semiconductor process method and semiconductor process equipment, aiming at solving the technical problems that in the existing process chamber, the surface resistance of a ceramic layer of an electrostatic chuck is greatly reduced due to CF type gas released by polymer remained on the wall of the chamber, so that the service life of the electrostatic chuck is influenced. In a first aspect, an embodiment of the present application provides a semiconductor processing method applied to a semiconductor processing apparatus, where the semiconductor processing apparatus includes a process chamber, including the steps of: Monitoring whether the process chamber is in an idle state or not in the process of carrying out corresponding semiconductor process treatment on a product wafer by the process chamber; And if the process chamber is in an idle state, performing chamber pretreatment operation on the process chamber every preset time, wherein the chamber pretreatment operation comprises the steps of controlling the indoor temperature of the process chamber to be a preset temperature value, introducing process gas into the process chamber, and ionizing the process gas to form plasma, wherein the process gas comprises nitrogen and does not contain fluorine. Optionally, in some embodiments of the application, the process gas comprises nitrogen and/or oxynitride. Optionally, in some embodiments of the present application, the process gas further includes any one or any several of oxygen, argon, and helium. Optionally, in some embodiments of the present application, the preset temperature value is not higher than 150 ℃, and/or the operation duration of the chamber pretreatment operation is 5s to 30s. Optionally, in some embodiments of the present application, if it is detected that the process chamber is in an idle state, the following steps are performed simultaneously: Monitoring the idle time of the process chamber; if the idle time is monitored to be longer than a preset threshold value, the semiconductor process is performed on a preset number of dummy wafers before the semiconductor process is performed on the wafer after the current idle state of the process chamber is finished. Optionally, in some embodiments of the present application, the method further includes the steps of: the chamber pretreatment operation is performed on the process chamber once before each wafer and/or each dummy wafer enters the process chamber. In a second aspect, an embodiment of the present application provides a semiconductor processing apparatus, including a process chamber, a working state monitoring device, and a chamber pretreatment device, wherein, The process chamber is used for carrying out corresponding semiconductor process treatment on the wafer; the working state monitoring device is used for monitoring whether the process chamber is in an idle state or not in the process of corresponding semiconductor process treatment of the process chamber; the chamber pretreatment device is used for carrying out chamber pretreatment operation on the process chamber every time when the working state monitoring device monitors that the process chamber is in an idle state, wherein the chamber pretreatment operation comprises the steps of controlling the indoor temperature of the process chamber to be a preset temperature value, introducing process gas into the process chamber, and ionizing the process gas in