CN-115313896-B - Full-bridge inverter circuit, driving method thereof and high-voltage generator

Abstract

The invention provides a full-bridge inverter circuit, a driving method thereof and a high-voltage generator, wherein the driving method comprises the steps of obtaining first phase deviation of each MOSFET, wherein the first phase deviation is the phase deviation of an output signal of each MOSFET relative to a driving signal; the method comprises the steps of determining a phase compensation value of each MOSFET according to the first phase deviation, determining the phase of a driving signal of each MOSFET according to the phase compensation value, and generating the driving signal of the corresponding MOSFET according to the phase of the driving signal of each MOSFET. And each MOSFET is driven by the compensated driving signal of the MOSFET, so that the current uniformity of each MOSFET is ensured.

Inventors

• HE JIE
• FAN SHENGFANG
• WANG JIE
• LIU ZHONGQI

Assignees

• 苏州博思得电气有限公司

Dates

Publication Date

20260508

Application Date

20220809

Claims (9)

1. 1. A driving method of a full-bridge inverter circuit, wherein each bridge arm of the full-bridge inverter circuit includes a plurality of MOSFET tubes connected in parallel, the driving method comprising: acquiring a first phase deviation of each MOSFET, wherein the first phase deviation is the phase deviation of an output signal of each MOSFET relative to a driving signal; determining a phase compensation value of each MOSFET according to the first phase deviation; Determining the phase of the driving signal of each MOSFET according to the phase compensation value; And after the driving signals after phase compensation are used for driving the plurality of MOSFET tubes, the second phase deviation of any two MOSFET tubes is smaller than a preset value, and the second phase deviation is the phase deviation between the output signals of any two MOSFET tubes.
2. 2. The driving method of the full-bridge inverter circuit according to claim 1, wherein the determining the phase compensation value of each MOSFET according to the first phase deviation comprises: Taking the output signal phase of the MOSFET corresponding to the first phase deviation minimum value as a reference phase, and determining the phase compensation value of other MOSFET in the plurality of MOSFET; Or, determining other phase compensation values in the plurality of MOSFET tubes by using the output signal phase of the MOSFET tube corresponding to the first phase deviation maximum value as a reference phase; Or determining a phase compensation value of each of the plurality of MOSFET tubes by taking the average phase of all the first phase deviations as a reference phase.
3. 3. The driving method of the full-bridge inverter circuit according to claim 1, wherein determining the phase of the driving signal of each MOSFET according to the phase compensation value, respectively, comprises: and performing lead phase compensation or lag phase compensation according to the phase compensation value to obtain the phase of the driving signal.
4. 4. A full-bridge inverter circuit, comprising: Each bridge arm of the full-bridge inverter circuit comprises a plurality of MOSFET tubes connected in parallel, and the full-bridge inverter circuit further comprises a plurality of driving circuits which are in one-to-one correspondence with the plurality of MOSFET tubes; The driving circuit is used for outputting driving signals of the corresponding MOSFET tubes, the phase of each driving signal is determined by a phase compensation value, the phase compensation value is determined according to first phase deviations of the plurality of MOSFET tubes, the first phase deviations are phase deviations of output signals of the MOSFET tubes relative to the driving signals, and after the driving signals after phase compensation are used for driving the plurality of MOSFET tubes, second phase deviations of any two MOSFET tubes are smaller than a preset value, and the second phase deviations are phase deviations between the output signals of any two MOSFET tubes.
5. 5. The full bridge inverter circuit of claim 4, wherein each of said MOSFET tubes employs a TO-247-4 package, said TO-247-4 package comprising a source, a gate, a drain, a gate emitter, said gate emitter being connected TO said drive circuit.
6. 6. The full-bridge inverter circuit of claim 4, wherein each MOSFET tube and each driving circuit and connecting wire are symmetrically disposed on a PCB board.
7. 7. The full bridge inverter circuit of claim 4, wherein the MOSFET tubes are SiC MOSFET tubes.
8. 8. The full-bridge inverter circuit of claim 4, further comprising: and the driving control unit is used for respectively controlling the driving circuits to generate the driving signals.
9. 9. A high voltage generator comprising a full bridge inverter circuit as claimed in any one of claims 4 to 8.

Description

Full-bridge inverter circuit, driving method thereof and high-voltage generator Technical Field The invention relates to the technical field of inverter circuits, in particular to a full-bridge inverter circuit, a driving method thereof and a high-voltage generator. Background The inverter circuit is used as an important component of the high-voltage generator, can convert direct current into alternating current, outputs high-voltage alternating current through a transformer in the high-voltage generator, and can be used by various devices, so that the use of a mobile power supply place or a high-voltage power utilization place is met to the greatest extent. In the existing inverter circuit structure, high-power equipment usually adopts a mode of connecting a plurality of MOSFET tubes or IGBT tubes in parallel to realize inversion of current. However, when a plurality of MOSFET tubes or a plurality of IGBT tubes are used in parallel, the problem of current sharing difference caused by distribution parameters can be solved, that is, when a plurality of MOSFET tubes or a plurality of IGBT tubes connected in parallel in an inverter circuit are in the same conducting moment, the currents passing through the adjacent MOSFET tubes or IGBT tubes are not the same, and a shunt phenomenon occurs, which can reduce the rated current of the inverter circuit, thereby reducing the actual power of the high voltage generator. Disclosure of Invention Therefore, the invention aims to solve the technical problem that the inverter circuit in the prior art can generate current sharing difference, and provides a full-bridge inverter circuit, a driving method thereof and a high-voltage generator. According to a first aspect, an embodiment of the present invention provides a driving method of a full-bridge inverter circuit, the driving method including: acquiring a first phase deviation of each MOSFET, wherein the first phase deviation is the phase deviation of an output signal of each MOSFET relative to a driving signal; determining a phase compensation value of each MOSFET according to the first phase deviation; Determining the phase of the driving signal of each MOSFET according to the phase compensation value; And generating the driving signals of the corresponding MOSFET according to the phase of the driving signals of each MOSFET. Optionally, the determining a phase compensation value of each MOSFET tube according to the first phase deviation includes: Taking the output signal phase of the MOSFET corresponding to the first phase deviation minimum value as a reference phase, and determining the phase compensation value of other MOSFET in the plurality of MOSFET; Or, determining other phase compensation values in the plurality of MOSFET tubes by using the output signal phase of the MOSFET tube corresponding to the first phase deviation maximum value as a reference phase; Or determining a phase compensation value of each of the plurality of MOSFET tubes by taking the average phase of all the first phase deviations as a reference phase. Optionally, determining the phase of the driving signal of each MOSFET according to the phase compensation value includes: and performing lead phase compensation or lag phase compensation according to the phase compensation value to obtain the phase of the driving signal. Optionally, after the driving signals after phase compensation are used to drive the plurality of MOSFET tubes, a second phase deviation of any two MOSFET tubes is smaller than a preset value, where the second phase deviation is a phase deviation between output signals of any two MOSFET tubes. According to a second aspect, an embodiment of the present invention provides a full-bridge inverter circuit, including: Each bridge arm of the full-bridge inverter circuit comprises a plurality of MOSFET tubes connected in parallel, and the full-bridge inverter circuit further comprises a plurality of driving circuits which are in one-to-one correspondence with the plurality of MOSFET tubes; The driving circuit is used for outputting corresponding driving signals of the MOSFET, and the phase of each driving signal is determined by a phase compensation value, wherein the phase compensation value is determined according to first phase deviations of the plurality of MOSFET, and the first phase deviations are phase deviations of output signals of the MOSFET relative to the driving signals. Optionally, each MOSFET tube adopts a TO-247-4 package structure, and the TO-247-4 package structure comprises a source electrode, a gate electrode, a drain electrode and a gate emitter electrode, and the gate emitter electrode is connected with the driving circuit. Optionally, each MOSFET tube, each driving circuit and connecting wires are symmetrically arranged on the PCB board. Optionally, the MOSFET tube is a SiC MOSFET tube. Optionally, the full-bridge inverter circuit further comprises a drive control unit for respectively controlling the drive circuit