CN-115360212-B - Bipolar transistor, preparation method and detection circuit

CN115360212BCN 115360212 BCN115360212 BCN 115360212BCN-115360212-B

Abstract

The invention discloses a bipolar transistor, a preparation method and a detection circuit, which are applied to the technical field of transistors. The piezoelectric thin film is used as an n-type doping layer in the transistor, a p-type polymer is clamped between two n-type piezoelectric layers to form a bipolar transistor with an n-p-n structure, and when any mechanical stress is applied to the top of the transistor, charges are generated in the piezoelectric layers, the upper surface and the lower surface of the piezoelectric layers are polarized, and opposite charges are accumulated on different surfaces. And because two pn junctions are formed, the free carriers can passivate the output signals, so that the induced piezoelectric potential can be enhanced by applying pressure, the combination of a sensing function and an energy acquisition function in the bipolar transistor is realized, and the energy acquisition can be simultaneously carried out when the sensing function works without adding any power supply and signal amplifying circuit.

Inventors

E. Manash, Iran
LIANG ZIHAO
ZHOU HANG

Assignees

北京大学深圳研究生院

Dates

Publication Date: 20260505
Application Date: 20220826

Claims (10)

1. A bipolar transistor of the type which comprises a first electrode and a second electrode, characterized by comprising the following steps: a first n-type piezoelectric layer and a second n-type piezoelectric layer which are oppositely arranged; a p-type polymer layer located between the first n-type piezoelectric layer and the second n-type piezoelectric layer; a first electrode positioned on the surface of one side of the first n-type piezoelectric layer, which is opposite to the p-type polymer layer; and a second electrode positioned on one side surface of the second n-type piezoelectric layer, which is opposite to the p-type polymer layer.
2. The bipolar transistor of claim 1 wherein the first n-type piezoelectric layer comprises a first n-type ZnO layer and the second n-type piezoelectric layer comprises a second n-type ZnO layer.
3. The bipolar transistor of claim 2 wherein the first n-type ZnO layer is oriented [002] and the second n-type ZnO layer is oriented [002].
4. The bipolar transistor of claim 1 wherein the p-type polymer layer comprises any one of: A P-type P3HT layer, a P-type PTAA layer and a P-type PEDOT: PSS layer.
5. The bipolar transistor of claim 1 wherein the first electrode comprises an ITO electrode and the second electrode comprises a copper electrode.
6. The bipolar transistor of claim 1 wherein the substrate on a side of the first electrode facing away from the p-type polymer layer is a flexible substrate.
7. The bipolar transistor of claim 6 further comprising a passivation layer covering the exposed surface of the first n-type piezoelectric layer and the exposed surface of the second n-type piezoelectric layer.
8. A method of fabricating a bipolar transistor comprising: a first n-type piezoelectric layer is arranged on one side surface of the first electrode; a p-type polymer layer formed by a p-type polymer material arranged on the surface of the first n-type piezoelectric layer; a second n-type piezoelectric layer is arranged on the surface of the p-type polymer layer; and arranging a second electrode on the surface of the second n-type piezoelectric layer to manufacture the bipolar transistor.
9. The method of claim 8, wherein disposing the first n-type piezoelectric layer on the first electrode side surface comprises: Depositing n-type piezoelectric material on the surface of the first electrode; Annealing the n-type piezoelectric material to form the first n-type piezoelectric layer; the disposing a second n-type piezoelectric layer on the surface of the p-type polymer layer includes: Depositing an n-type piezoelectric material on the surface of the p-type polymer layer; And annealing the n-type piezoelectric material to form the second n-type piezoelectric layer.
10. A detection circuit comprising a plurality of bipolar transistors according to any one of claims 1 to 7, a plurality of said bipolar transistors being arranged in an array.

Description

Bipolar transistor, preparation method and detection circuit Technical Field The present invention relates to the field of transistor technologies, and in particular, to a bipolar transistor, a method for manufacturing the bipolar transistor, and a detection circuit. Background Wearable electronic applications with man-machine interaction, sensory skin-like, energy harvesting, health monitoring and other functions have attracted extensive attention, and the design layers of various device structures are endless. Sensing performance in various detection modes, such as pressure, strain, temperature and humidity, can be enhanced by different structural designs, and energy and power management of the device are ignored, but the energy consumption footprint of such sensors should also be considered by designers. It would therefore be a significant innovation and advancement in such devices if a combination of sensing and energy harvesting functions could be achieved. In such devices, the sensing unit output signal is actually powered by the particular energy harvesting system. Devices that implement such small hybrid systems need to overcome some of the key challenges, firstly, how to extract the output signal from the sensing/energy harvesting device, and secondly, to amplify the amplitude of the signal to achieve the functionality that the wearable system is designed for. How to provide a transistor for integrated sensor operation and energy harvesting is an urgent problem to be solved by those skilled in the art. Disclosure of Invention The invention aims to provide a bipolar transistor which combines a sensing function and an energy collecting function, and also aims to provide a preparation method of the bipolar transistor and a detection circuit which combine the sensing function and the energy collecting function. In order to solve the above technical problems, the present invention provides a bipolar transistor, comprising: a first n-type piezoelectric layer and a second n-type piezoelectric layer which are oppositely arranged; a p-type polymer layer located between the first n-type piezoelectric layer and the second n-type piezoelectric layer; a first electrode positioned on the surface of one side of the first n-type piezoelectric layer, which is opposite to the p-type polymer layer; and a second electrode positioned on one side surface of the second n-type piezoelectric layer, which is opposite to the p-type polymer layer. Optionally, the first n-type piezoelectric layer includes a first n-type ZnO layer, and the second n-type piezoelectric layer includes a second n-type ZnO layer. Optionally, the first n-type ZnO layer is oriented [002], and the second n-type ZnO layer is oriented [002]. Optionally, the p-type polymer layer includes any one of the following: A P-type P3HT layer, a P-type PTAA layer and a P-type PEDOT: PSS layer. Optionally, the first electrode comprises an ITO electrode and the second electrode comprises a copper electrode. Optionally, the substrate located on a surface of the first electrode opposite to the p-type polymer layer is a flexible substrate. Optionally, a passivation layer covering the exposed surface of the first n-type piezoelectric layer and the exposed surface of the second n-type piezoelectric layer is further included. The invention also provides a preparation method of the bipolar transistor, which comprises the following steps: a first n-type piezoelectric layer is arranged on one side surface of the first electrode; a p-type polymer layer formed by a p-type polymer material arranged on the surface of the first n-type piezoelectric layer; a second n-type piezoelectric layer is arranged on the surface of the p-type polymer layer; and arranging a second electrode on the surface of the second n-type piezoelectric layer to manufacture the bipolar transistor. Optionally, the disposing a first n-type piezoelectric layer on a surface of one side of the first electrode includes: Depositing n-type piezoelectric material on the surface of the first electrode; Annealing the n-type piezoelectric material to form the first n-type piezoelectric layer; the disposing a second n-type piezoelectric layer on the surface of the p-type polymer layer includes: Depositing an n-type piezoelectric material on the surface of the p-type polymer layer; And annealing the n-type piezoelectric material to form the second n-type piezoelectric layer. The invention also provides a detection circuit which comprises a plurality of bipolar transistors as described in any one of the above, and the bipolar transistors are distributed in an array. The bipolar transistor comprises a first n-type piezoelectric layer, a second n-type piezoelectric layer, a p-type polymer layer, a first electrode and a second electrode, wherein the first n-type piezoelectric layer and the second n-type piezoelectric layer are oppositely arranged, the p-type polymer layer is arranged between the first n-type piezoelectric la