CN-115394660-B - Semiconductor device and method for forming a trench with improved removal depth in EMI shielding

CN115394660BCN 115394660 BCN115394660 BCN 115394660BCN-115394660-B

Abstract

The present disclosure relates to semiconductor devices and methods of forming trenches with improved removal depth in EMI shields. A semiconductor device is formed by providing a semiconductor package including a shielding layer and forming a trench in the shielding layer using a laser. The laser is turned on and exposed to the shielding layer, wherein a center of the laser is disposed at a first point of the shielding layer. The laser is moved in a loop while the laser remains on and exposed to the shielding layer. When the center of the laser is disposed on the second point of the shielding layer, the exposure of the laser to the shielding layer is stopped. The distance between the first point and the second point is approximately equal to the radius of the laser.

Inventors

C.O.Jin
J.H.Zheng
J.W.Li
Y.J.Zhang

Assignees

星科金朋私人有限公司

Dates

Publication Date: 20260505
Application Date: 20220316
Priority Date: 20210505

Claims (11)

1. A method of manufacturing a semiconductor device, comprising: Providing a semiconductor package including a shielding layer, and A slot is formed in the shielding layer using a laser by the steps of, Turning on the laser and exposing the laser to the shielding layer, wherein a center of a beam of the laser strikes a first point of the shielding layer of the semiconductor package, Moving the laser in a loop by moving the laser in a first direction from the first point while the laser remains on and exposed to the shielding layer, Stopping exposure of the laser light to the shielding layer when a center of a beam of the laser light strikes a second point of the shielding layer of the semiconductor package, wherein a distance between the first point and the second point in a second direction opposite to the first direction from the first point is approximately equal to a radius of the beam of the laser light, When the center of the beam of the laser light is disposed on a third point of the shielding layer, the exposure of the laser light to the shielding layer is stopped for the first time, wherein the distance between the first point and the third point is larger than the radius of the beam of the laser light, Exposing the shielding layer to the laser for the second time, and Moving the laser light from a fourth point to the second point upon a second exposure of the shielding layer to the laser light, wherein a distance from the third point to the fourth point is approximately equal to a radius of a beam of the laser light, Wherein a first rate of movement of the laser when moving the laser in the loop is greater than a second rate of movement of the laser when moving the laser from the fourth point to the second point.
2. The method of claim 1, wherein an on-delay of the laser is greater than an off-delay of the laser.
3. The method of claim 1, wherein the semiconductor package comprises an electrical component disposed below the loop.
4. The method of claim 1, wherein the loop comprises rounded corners.
5. A method of manufacturing a semiconductor device, comprising: Providing a semiconductor package including a shielding layer, and Forming a trench in the shielding layer using a laser by: turning on the laser and exposing the laser to the shielding layer, wherein a center of a beam of the laser strikes a first point of the shielding layer of the semiconductor package, Moving the laser in a loop while the laser remains on and exposed to the shielding layer, an When the center of the beam of laser light is disposed on a third point of the shielding layer, stopping exposing the laser light to the shielding layer for the first time, wherein a distance between the first point and the third point is greater than a radius of the beam of laser light; exposing the shielding layer to the laser a second time, Moving the laser light from a fourth point to a second point when the shielding layer is exposed to the laser light a second time, wherein a distance from the third point to the fourth point is approximately equal to a radius of a beam of the laser light, wherein a distance between the first point and the second point is approximately equal to a radius of a beam of the laser light, wherein a moving speed of the laser light is lower when moving the laser light from the fourth point to the second point than when moving the laser light in a loop.
6. The method of claim 5, wherein the first point is at the beginning of the formation of the groove.
7. The method of claim 5, wherein the second point is at the end of the formation of the groove.
8. The method of claim 5, further comprising forming the groove with rounded corners.
9. A method of manufacturing a semiconductor device, comprising: providing an encapsulant comprising a barrier layer formed over the encapsulant, and Forming a trench in the shielding layer by: Turning on a laser and exposing the laser to the shielding layer, wherein the center of the beam of the laser strikes a first point of the shielding layer, Moving the laser in a loop while the laser remains on and exposed to the shielding layer, an When the center of the beam of laser light is disposed on a third point of the shielding layer, stopping exposing the laser light to the shielding layer for the first time, wherein a distance between the first point and the third point is greater than a radius of the beam of laser light; exposing the shielding layer to the laser a second time, Moving the laser light from a fourth point to a second point when the shielding layer is exposed to the laser light a second time, wherein a distance from the third point to the fourth point is approximately equal to a radius of a beam of the laser light, wherein a distance between the first point and the second point is approximately equal to a radius of a beam of the laser light, and wherein a moving speed of the laser light when moving the laser light from the fourth point to the second point is different from when moving the laser light in a loop.
10. The method of claim 9, further comprising: Providing a first electric component, and The encapsulant is deposited over the first electrical component.
11. The method of claim 10, further comprising: Providing a second electrical component; providing a conductive post disposed between the first electrical component and the second electrical component, and The encapsulant is deposited over the second electrical component and the conductive pillars.

Description

Semiconductor device and method for forming a trench with improved removal depth in EMI shielding Technical Field The present invention relates generally to semiconductor devices and, more particularly, to a method of forming a trench (slot) with improved removal depth in an electromagnetic interference shield layer on an electrical component in a System In Package (SiP) module and a semiconductor device. Background Semiconductor devices are commonly found in modern electronic products. Semiconductor devices perform a wide variety of functions such as signal processing, high speed computing, transmitting and receiving electromagnetic signals, controlling electronics, converting sunlight into electricity, and producing visual images for television displays. Semiconductor devices are found in the fields of communications, power conversion, networking, computers, entertainment and consumer products. Semiconductor devices are also found in military applications, aviation, automotive, industrial controllers, and office equipment. Semiconductor devices, particularly in high frequency applications such as Radio Frequency (RF) communications, typically contain one or more Integrated Passive Devices (IPDs) to perform the necessary electrical functions. For higher density and extended electrical functionality in small spaces, multiple semiconductor dies and IPDs may be integrated into a SiP module. Within the SiP module, semiconductor die and IPD are mounted to a substrate for structural support and electrical interconnection. An encapsulant is deposited over the semiconductor die, IPD, and substrate. An electromagnetic shielding layer is typically formed on the encapsulant. The SiP module includes high-speed digital and RF electrical components that are highly integrated for small size, low height, and high clock frequency. The electromagnetic shielding layer reduces or suppresses EMI, RFI, and other inter-device interference, such as radiated by high speed digital devices, from affecting neighboring devices within or adjacent to the SiP module. However, conformally applied electromagnetic shielding layers themselves may not be effective against EMI loop currents within the shielding material. The EMI current loop may originate from a high-energy/output device, such as a power amplifier embodied in one or more of the electrical components. EMI loop currents flow through the electromagnetic shielding layer and cause EMI, RFI, and other inter-device interference within the SiP module or in sensitive adjacent components adjacent to the SiP module. Drawings 1A-1c illustrate a semiconductor wafer having a plurality of semiconductor die separated by streets; FIGS. 2a-2k illustrate a process for disposing an electronic component on a substrate in a SiP module having a slotted electromagnetic shield; FIGS. 3a and 3b illustrate the use of corner radii to improve the molded article removal depth at the corners of a trough; FIGS. 4a-4c illustrate forming a slot without overlapping a start point and a stop point; FIGS. 5a-5c illustrate the formation of a trench without overlapping a start point and a stop point using a two-step process; FIGS. 6a and 6b show slots with vertical overlap, and Fig. 7a and 7b show the integration of a slotted SiP module into an electronic device. Detailed Description In the following description, the invention is described in one or more embodiments with reference to the drawings, in which like numerals represent the same or similar elements. While the invention has been described in terms of the best mode for achieving the invention's objectives, it will be appreciated by those skilled in the art that it is intended to cover alternatives, modifications, and equivalents as may be included within the spirit and scope of the invention as defined by the appended claims and their equivalents as supported by the following disclosure and drawings. The term "semiconductor die" as used herein refers to both singular and plural forms of words and, thus, may refer to both a single semiconductor device and a plurality of semiconductor devices. Semiconductor devices are typically manufactured using two complex manufacturing processes, front-end fabrication and back-end fabrication. Front end fabrication involves forming a plurality of dies on the surface of a semiconductor wafer. Each die on the wafer contains active and passive electrical components that are electrically connected to form a functional circuit. Active electrical components, such as transistors and diodes, have the ability to control the flow of current. Passive electrical components, such as capacitors, inductors, and resistors, create the relationship between voltage and current required to perform a circuit function. Back-end fabrication refers to dicing or singulating the completed wafer into individual semiconductor die and packaging the semiconductor die for structural support, electrical interconnection, and environmental isolation. To si