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CN-115410920-B - Method for manufacturing semiconductor device and semiconductor device

CN115410920BCN 115410920 BCN115410920 BCN 115410920BCN-115410920-B

Abstract

The application provides a manufacturing method of a semiconductor device and the semiconductor device, the method comprises the steps of firstly, providing a first base comprising a laminated first substrate and a first preparation substrate, and providing a second base comprising a laminated second substrate and a first oxide layer; the method comprises the steps of forming a first substrate, removing part of the first prepared substrate, forming a third substrate comprising a body part and a plurality of protruding parts arranged on the body part at intervals, forming a second oxide layer on the surface of the third substrate far away from the first substrate, bonding a second base on the surface of the second oxide layer far away from the third substrate, enabling the first oxide layer to be in contact with the second oxide layer, removing the first substrate of the bonded structure and the body part and/or part of the protruding parts of the third substrate to obtain a prepared structure, and finally forming a device structure on the exposed surface of the second oxide layer in the prepared structure to obtain a target structure. The performance of the semiconductor device is guaranteed to be good.

Inventors

  • REN YUHUI
  • HENRY H. ADAMSON
  • KONG ZHENZHEN

Assignees

  • 广东省大湾区集成电路与系统应用研究院
  • 中国科学院微电子研究所

Dates

Publication Date
20260512
Application Date
20220923

Claims (11)

  1. 1. A method of fabricating a semiconductor device, the method comprising: providing a first base and a second base, wherein the first base comprises a laminated first substrate and a first preparation substrate, and the second base comprises a laminated second substrate and a first oxide layer; Removing part of the first preparation substrate, and forming a third substrate by the rest of the first preparation substrate, wherein the third substrate comprises a body part and a plurality of protruding parts arranged on the body part at intervals, and the material of the third substrate comprises germanium; Forming a second oxide layer on a surface of the third substrate remote from the first substrate, and bonding the second base on a surface of the second oxide layer remote from the third substrate, the first oxide layer being in contact with the second oxide layer; Removing the body parts of the first substrate and the third substrate of the bonded structure, or removing the body parts and part of the protruding parts of the first substrate and the third substrate of the bonded structure, so as to obtain a preparation structure, wherein the rest of protruding parts form a plurality of target protruding parts; And forming a device structure on the exposed surface of the second oxide layer in the preparation structure to obtain a target structure, wherein the device structure is contacted with the target protruding part.
  2. 2. The method of claim 1, wherein forming a second oxide layer on a surface of the third substrate remote from the first substrate comprises: Forming a preliminary oxide layer on a surface of the third substrate remote from the first substrate; removing part of the preliminary oxide layer to expose the protruding part of the third substrate, wherein the rest of the preliminary oxide layer forms a third oxide layer; And forming a fourth oxide layer on the third oxide layer and the exposed surface of the protruding part of the third substrate, wherein the third oxide layer and the fourth oxide layer form the second oxide layer.
  3. 3. The method of claim 2, wherein removing the body portions of the first and third substrates of the bonded structure, or removing the body portions and portions of the protruding portions of the first and third substrates of the bonded structure, comprises: Removing the first substrate; Removing the body portion of the third substrate, or removing the body portion and part of the protruding portion of the third substrate, so that the third oxide layer is exposed; and removing the third oxide layer to expose part of the fourth oxide layer.
  4. 4. The method of claim 2, wherein removing a portion of the preliminary oxide layer such that the protruding portion of the third substrate is exposed comprises: A CMP process is used to remove a portion of the preliminary oxide layer such that the protruding portion of the third substrate is exposed.
  5. 5. The method of claim 2, wherein forming a device structure on the exposed surface of the second oxide layer in the preliminary structure results in a target structure, comprising: removing a portion of the sidewall of the target protrusion; Forming a source electrode and a drain electrode on two sides of the target protruding portion after removing part of the side wall, wherein the source electrode is respectively contacted with the target protruding portion and the fourth oxide layer, and the drain electrode is respectively contacted with the target protruding portion and the fourth oxide layer; A gate is formed on a surface of the second substrate remote from the first oxide layer.
  6. 6. The method of claim 5, wherein after forming the source and drain on both sides of the target protrusion after removing a portion of the sidewall, the method further comprises: Removing part of the target protruding part, part of the source electrode and part of the drain electrode, forming at least one first prepared nanowire by the rest of the target protruding part, forming a source electrode part and at least one second prepared nanowire by the rest of the source electrode, forming a drain electrode part and at least one third prepared nanowire by the rest of the drain electrode, wherein the first prepared nanowire, the second prepared nanowire and the third prepared nanowire are in contact connection to form one target nanowire, the source electrode part and the drain electrode part are positioned on the fourth oxide layers at two sides of at least one target nanowire, and two ends of the target nanowire are respectively in contact with the source electrode part and the drain electrode part; And removing part of the fourth oxide layer and part of the first oxide layer, wherein the rest of the first oxide layer forms a first oxide part and two second oxide parts which are arranged at intervals, the two second oxide parts are positioned on the surface of the first oxide part, which is close to the target nanowire, the rest of the fourth oxide layer forms a third oxide part which is arranged at intervals, and the projection of the source electrode part and the drain electrode part on the first oxide layer covers the second oxide part and the third oxide part.
  7. 7. The method of claim 6, wherein removing a portion of the fourth oxide layer and a portion of the first oxide layer comprises: a portion of the fourth oxide layer and a portion of the first oxide layer are removed using a predetermined solution, the predetermined solution comprising an HF solution.
  8. 8. The method of any one of claims 1 to 7, wherein the thickness of the target protrusion ranges from 5nm to 100nm.
  9. 9. The method of any one of claims 1 to 7, wherein the material of the first oxide layer comprises silicon dioxide.
  10. 10. A semiconductor device manufactured by the method according to any one of claims 1 to 9.
  11. 11. A transistor, characterized in that it is manufactured by the method according to any one of claims 1 to 9 or is the semiconductor device according to claim 10.

Description

Method for manufacturing semiconductor device and semiconductor device Technical Field The present application relates to the field of semiconductors, and in particular, to a method for manufacturing a semiconductor device, and a transistor. Background Ge has been of great interest as a channel material for a very promising P-channel metal oxide semiconductor field effect Transistor (Metal Oxide Semiconductor FIELD EFFECT Transistor, MOSFET for short) because of its higher carrier mobility and other advantages than Si. However, since Ge only exhibits good performance when it is thin, obtaining a GOI (Germanium On Insulator ) substrate with good thickness uniformity has become a current challenge. The above information disclosed in the background section is only for enhancement of understanding of the background art from the technology described herein and, therefore, may contain some information that does not form the prior art that is already known in the country to a person of ordinary skill in the art. Disclosure of Invention The application mainly aims to provide a manufacturing method of a semiconductor device, the semiconductor device and a transistor, so as to solve the problem that the performance of the semiconductor device is poor due to the fact that the thickness of Ge is difficult to control in the prior art. According to one aspect of the embodiment of the invention, a manufacturing method of a semiconductor device is provided, the method comprises the steps of providing a first base and a second base, wherein the first base comprises a first substrate and a first prepared substrate which are stacked, the second base comprises a second substrate and a first oxide layer which are stacked, removing part of the first prepared substrate, forming a third substrate by the rest of the first prepared substrate, forming a second oxide layer on the surface, far from the first substrate, of the third substrate, and bonding the second base on the surface, far from the third substrate, of the second oxide layer, the first oxide layer is in contact with the second oxide layer, removing the first substrate of the bonded structure and the body and/or part of the third substrate, forming a third substrate by the rest of the first prepared substrate, forming a plurality of protruding parts on the body part at intervals, forming a plurality of protruding parts on the body part, forming a second oxide layer on the surface, far from the first substrate, bonding the second oxide layer is in contact with the second oxide layer, forming a target structure in contact with the target structure in the second oxide layer, and forming the target structure on the target structure. Optionally, forming a second oxide layer on a surface of the third substrate away from the first substrate includes forming a preliminary oxide layer on a surface of the third substrate away from the first substrate, removing a portion of the preliminary oxide layer such that the protruding portion of the third substrate is exposed, the remaining preliminary oxide layer forming a third oxide layer, and forming a fourth oxide layer on the third oxide layer and the exposed surface of the protruding portion of the third substrate, the third oxide layer and the fourth oxide layer forming the second oxide layer. Optionally, removing the first substrate and the body portion and/or part of the protruding portion of the third substrate of the bonded structure includes removing the first substrate and removing the body portion and/or part of the protruding portion of the third substrate to expose the third oxide layer, and removing the third oxide layer to expose part of the fourth oxide layer. Optionally, removing a portion of the preliminary oxide layer such that the protruding portion of the third substrate is exposed includes removing a portion of the preliminary oxide layer using a CMP process such that the protruding portion of the third substrate is exposed. Optionally, forming a device structure on the exposed surface of the second oxide layer in the preparation structure to obtain a target structure, wherein the target structure comprises removing part of the side wall of the target protrusion, respectively forming a source electrode and a drain electrode on two sides of the target protrusion after removing part of the side wall, respectively contacting the source electrode with the target protrusion and the fourth oxide layer, respectively contacting the drain electrode with the target protrusion and the fourth oxide layer, and forming a grid electrode on the surface of the second substrate far away from the first oxide layer. Optionally, after forming a source and a drain on two sides of the target protruding portion after removing part of the side wall, the method further includes removing part of the target protruding portion, part of the source and part of the drain, forming at least one first prepared nanowire by the remaining target protru