CN-115497801-B - Substrate processing apparatus and substrate processing method

CN115497801BCN 115497801 BCN115497801 BCN 115497801BCN-115497801-B

Abstract

The present invention relates to a substrate processing apparatus and a substrate processing method. The substrate processing apparatus includes a process chamber in which an inner space for processing a substrate is formed, an ion blocker for dividing the inner space into a plasma generation space and a processing space, a substrate supporting unit for supporting the substrate in the processing space, a discharging unit for discharging the processing space, an annealing source positioned above the ion blocker and transmitting energy for annealing to the substrate through the ion blocker, and a gas supply unit for supplying a process gas to the plasma generation space, wherein the ion blocker includes a body shaped like a disk, made of a microwave transmissible material, and formed with a plurality of through holes, and a transparent conductive oxide film disposed on at least one of an upper surface and a lower surface of the body with a first thickness or less.

Inventors

Cui Lunshuo
ZHAO SHUNTIAN
Jin Runxiang

Assignees

细美事有限公司

Dates

Publication Date: 20260512
Application Date: 20220617
Priority Date: 20210617

Claims (7)

1. A substrate processing method, the substrate processing method comprising: a first process of exciting a process gas into a plasma and treating a substrate with radicals that have passed through an ion blocker that blocks ions in the plasma, and A second process of applying the first energy having been transmitted through the ion blocker to the substrate, Wherein the ion blocker is made of a material through which light, heat and microwaves can be transmitted, Wherein the first process and the second process are performed in one chamber, Wherein the ion blocker comprises: a body shaped like a disk and made of a material through which light, heat and microwaves can be transmitted, Wherein the body is made of quartz material.
2. The substrate processing method of claim 1, wherein the ion blocker is grounded.
3. The substrate processing method according to claim 1, wherein The ion blocker further comprises: A transparent conductive oxide film coated on at least one of an upper surface and a lower surface of the body with a first thickness or less, The first thickness is a thickness of a material that microwaves transmit through the transparent conductive oxide film.
4. The substrate processing method according to claim 3, wherein the transparent conductive oxide film is formed of one or more of AZO, FTO, ATO, snO 2 、ZnO、IrO 2 、RuO 2 , graphite, metal nanowires, and CNTs, or is formed by multiple overlapping of AZO, FTO, ATO, snO 2 、ZnO、IrO 2 、RuO 2 , graphite, metal nanowires, and CNTs.
5. The substrate processing method according to claim 3, wherein when the transparent conductive oxide film is an indium tin oxide ITO material, the first thickness is 1 μm.
6. The substrate processing method according to claim 1, wherein the application of the first energy is performed in a state of blocking the supply of the process gas.
7. The substrate processing method of claim 1, wherein the first energy anneals the substrate.

Description

Substrate processing apparatus and substrate processing method Cross Reference to Related Applications The present application claims priority and rights of korean patent application No. 10-2021-0078399 filed on month 17 of 2021, which is incorporated herein by reference in its entirety. Technical Field The present invention relates to a substrate processing apparatus and a substrate processing method. Background The plasma may be used in a process for treating a substrate. For example, the plasma may be used in an etching, deposition or dry cleaning process. The plasma is generated by an extremely high temperature, a strong electric field, or a high-frequency electromagnetic field (RF electromagnetic field), and refers to an ionized gas composed of ions, electrons, radicals, or the like. When ions or radical particles contained in the plasma collide with the substrate, a dry cleaning, ashing, or etching process using the plasma is performed. Among these processes, the dry cleaning process is a process for removing a native oxide film formed on a substrate, and a thin film to be removed is very thin compared to an etching process. Therefore, when a substrate is treated with plasma containing a large amount of radicals, ions and electrons, not only a natural oxide film to be removed from the substrate but also an underlying film is damaged due to a high etching rate of the thin film. To prevent this problem, korean patent application laid-open No. 10-2011-0057510 discloses an apparatus for treating a substrate by treating the substrate by using a grounded ion blocker, by using plasma mainly containing only radicals free of electrons and ions. Further, in order to manufacture a semiconductor device, various heat treatments (for example, a recombination treatment (reforming treatment), an annealing treatment (ANNEALING TREATMENT), and the like) are repeatedly performed on the semiconductor wafer. Further, as semiconductor devices become dense, multi-layered, and highly integrated, their specifications become more difficult each year, and there is a need to improve the uniformity and film quality within the surface of semiconductor wafers subjected to various heat treatments. In the manufacturing process of semiconductor devices, an operation of moving between a device using plasma and an annealing device is involved, and UPH is affected according to a moving time between devices. Disclosure of Invention The present invention has been made in an effort to provide a substrate processing apparatus capable of efficiently processing a substrate. The present invention has been made in an effort to provide a substrate processing apparatus capable of improving UPH per unit time. The present invention has been made in an effort to provide a substrate processing apparatus capable of reducing the footprint of equipment. The problems to be solved by the present invention are not limited to the above-described problems, and the problems not mentioned will be clearly understood by those skilled in the art from the description and drawings. An exemplary embodiment of the present invention provides a substrate processing apparatus including a process chamber in which an inner space for processing a substrate is formed, an ion blocker for dividing the inner space into a plasma generation space and a processing space, a substrate supporting unit for supporting the substrate in the processing space, a discharging unit for discharging the processing space, an annealing source positioned above the ion blocker and transmitting energy for annealing to the substrate through the ion blocker, and a gas supply unit for supplying a process gas to the plasma generation space, wherein the ion blocker includes a body shaped like a disk, made of a material through which microwaves can transmit, and formed with a plurality of through holes, and a transparent conductive oxide film disposed on at least one of an upper surface and a lower surface of the body with a thickness of a first thickness or less. In exemplary embodiments, the transparent conductive oxide film may be formed of one or more, any one or a mixture, or by multiple overlapping of AZO, FTO, ATO, snO 2、ZnO、IrO2、RuO2, graphite, metal nanowires, and CNTs. In an exemplary embodiment, the ion blocker may be grounded. In an exemplary embodiment, the body may be made of a quartz material. In an exemplary embodiment, the annealing source may include an antenna unit including an antenna disposed at one side of the plasma generation space, and a transmission plate positioned between the antenna and the plasma generation space, and a microwave applying unit for applying set microwaves to the antenna unit. In an exemplary embodiment, the annealing source may be a lamp or an optical system for delivering a laser. In an exemplary embodiment, the substrate processing apparatus may further include a plasma source to apply energy for exciting the process gas, which has been applied to the plasma