CN-115527840-B - Semiconductor device and method for manufacturing the same

Abstract

A semiconductor device and a method of manufacturing are provided in which a rail is formed over a substrate, and a III-V material is grown over the substrate, wherein the rail blocks growth of the III-V material. Thus, smaller areas of the III-V materials are grown, thereby preventing stresses associated with the growth of larger sheets.

Inventors

• Guo Minsong
• Hong Likai
• CHEN BAIWEI
• CHEN ZHONGCHENG

Assignees

• 台湾积体电路制造股份有限公司

Dates

Publication Date

20260512

Application Date

20220831

Priority Date

20210831

Claims (20)

1. 1. A method of manufacturing a semiconductor device, the method comprising: Depositing a fence between a first region of a semiconductor substrate and a second region of the semiconductor substrate; Growing a layer of III-V material on the semiconductor substrate after the depositing the fence; Masking the III-V material layer with a mask; Removing the fence in the presence of the mask to form a first opening after the growing of the III-V material layer, and A material is deposited over the semiconductor substrate, wherein the deposited material at least partially fills the first opening.
2. 2. The method of claim 1, further comprising singulating the first region from the second region through the material.
3. 3. The method of manufacturing a semiconductor device according to claim 1, wherein the first region and the second region are portions of a single semiconductor die region.
4. 4. The method of manufacturing a semiconductor device according to claim 1, wherein the group III-V material is gallium nitride.
5. 5. The method of claim 1, wherein the rail comprises a photoresist.
6. 6. The method of claim 1, wherein the rail has a lattice constant different from that of the semiconductor substrate.
7. 7. The method of manufacturing a semiconductor device according to claim 1, wherein the rail comprises two or more layers of different rail materials.
8. 8. A method of manufacturing a semiconductor device, the method comprising: Forming a fence between a first die region and a second die region of a semiconductor substrate; Growing a stack of a plurality of III-V material layers on the first die region and the second die region using the rail as a mask, wherein after the growing the stack of the plurality of III-V material layers, a portion of the plurality of III-V material layers has a first sidewall adjacent to the rail, a combined height of the stack of the plurality of III-V material layers being less than a height of the rail; Removing the rail from a first region to expose sidewalls of the stack of III-V material layers; Depositing one or more materials in the first region, and Singulating the first die region from the first region, wherein after the singulation, a portion of the one or more materials remains adjacent to the plurality of sidewalls of the stack of the plurality of III-V material layers.
9. 9. The method of manufacturing a semiconductor device according to claim 8, wherein the step of forming the rail comprises forming a plurality of layers of different rail materials.
10. 10. The method of manufacturing a semiconductor device of claim 9, wherein the forming the rail deposits each of the different rail materials prior to patterning any of the different rail materials.
11. 11. The method of manufacturing a semiconductor device of claim 9, wherein the forming the rail separately deposits and patterns the layers.
12. 12. The method of claim 8, wherein the step of forming the rail comprises forming a photoresist in physical contact with the semiconductor substrate.
13. 13. The method for manufacturing a semiconductor device according to claim 8, further comprising: forming a second fence between a first inter-die region and a second inter-die region, and The second rail is removed from a second area.
14. 14. The method of claim 13, wherein singulating the first die region from the second region does not remove any material from the second region.
15. 15. A semiconductor device, comprising: a semiconductor substrate having a first sidewall; a plurality of III-V layers over the semiconductor substrate, the plurality of III-V layers including a second sidewall offset from the first sidewall, a surface of the semiconductor substrate extending between the first sidewall and the second sidewall, and A sidewall spacer comprising a plurality of layers of different materials including a layer of dielectric material, a layer of conductive material, an interlayer dielectric layer, and a passivation layer, the sidewall spacer being in physical contact with the second sidewall and the surface of the semiconductor substrate, the sidewall spacer being aligned with the first sidewall.
16. 16. The semiconductor device of claim 15, wherein the sidewall spacers fill a region between the second sidewall of the III-V layers and the surface of the semiconductor substrate.
17. 17. The semiconductor device of claim 15, wherein each of the layers of the different materials has a different thickness.
18. 18. The semiconductor device of claim 17, wherein a first one of the layers of the different materials is aligned with the first sidewall having a thickness that is less than any other one of the layers of the different materials.
19. 19. The semiconductor device of claim 16, wherein the III-V layers comprise a third sidewall and a fourth sidewall, the third sidewall facing the fourth sidewall, wherein the layers of the different materials extend from the second sidewall to physically contact both the third sidewall and the fourth sidewall.
20. 20. The semiconductor device of claim 15, wherein the plurality of III-V layers comprises gallium nitride.

Description

Semiconductor device and method for manufacturing the same Technical Field The present disclosure relates to a semiconductor device having a rail and a method of manufacturing the same. Background Semiconductor devices are used in a variety of electronic applications such as, for example, personal computers, cell phones, digital cameras, and other electronic equipment. Semiconductor devices are typically fabricated by sequentially depositing layers of insulating or dielectric, conductive, and semiconductor materials on a semiconductor substrate, and patterning the various material layers using photolithography to form circuit elements and components thereon. The semiconductor industry continues to increase the integration density of various electronic components (e.g., transistors, diodes, resistors, capacitors, etc.) by continually reducing the minimum feature size, thereby allowing more components to be integrated into a given area. Disclosure of Invention Some embodiments of the present disclosure provide a method of manufacturing a semiconductor device, the method comprising depositing a rail between a first region of a semiconductor substrate and a second region of the semiconductor substrate, growing a layer of III-V material on the semiconductor substrate after depositing the rail, removing the rail after growing the layer of III-V material to form a first opening, and depositing a material over the semiconductor substrate, wherein depositing the material at least partially fills the first opening. Further embodiments of the present disclosure provide a method of fabricating a semiconductor device, the method comprising forming a fence between a first die region and a second die region of a semiconductor substrate, growing a stack of III-V material layers in the first die region and the second die region using the fence as a mask, wherein after growing the stack of III-V material layers, a portion of the III-V material layers has a first sidewall adjacent to the fence, removing the fence from the first region to expose a plurality of sidewalls of the stack of III-V material layers, depositing one or more materials in the first region, and singulating the first die region from the first region, wherein after singulating, a portion of the one or more materials remains adjacent to the sidewalls of the stack of III-V material layers. Still other embodiments of the present disclosure provide a semiconductor device comprising a semiconductor substrate, a plurality of III-V layers, and a sidewall spacer. The semiconductor substrate has a first sidewall. A plurality of III-V layers are over the semiconductor substrate, the III-V layers including a second sidewall offset from the first sidewall, a surface of the semiconductor substrate extending between the first sidewall and the second sidewall. The sidewall spacers are in physical contact with the second sidewall and the surface of the semiconductor substrate, the sidewall spacers being aligned with the first sidewall. Drawings The aspects of the present disclosure are best understood from the following detailed description when read with the accompanying drawing figures. It should be noted that the various features are not drawn to scale according to standard specifications in the industry. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of discussion. FIGS. 1A-1B illustrate the formation of a fence on a wafer according to some embodiments; FIGS. 2A-2B illustrate the formation of multiple layers according to some embodiments; figures 3A-3B illustrate removal of a fence according to some embodiments; Fig. 4A-4B illustrate the formation of a stack of multiple layers according to some embodiments; FIGS. 5A-5B illustrate singulation processes, according to some embodiments; Fig. 6A-6B illustrate multi-layered enclosures according to some embodiments; FIG. 7 illustrates a fence around a plurality of dies, according to some embodiments; Fig. 8A-8B illustrate the formation of a fence within a semiconductor die, according to some embodiments. [ Symbolic description ] 100 Semiconductor wafer 101 Substrate 103 Grain area 105 Fence 107 Scribing region 200 Multi-layer Stack 201 Buffer layer 203 Gradient layer 205 First III-V compound layer 207 Second III-V compound layer 209 Third III-V group compound layer 211 Active layer 301 First opening 401 Semiconductor die 403 Multiple layers 405 First layer 407 Second layer 409 Third layer 411 Fourth layer 501 Saw blade 503 Sidewall spacer 601 First fence layer 603 Second rail layer 605 Third rail layer 607 Fourth rail layer 801 First sub-region 803 Second subregion B-B': line L 1 first length L 2 second length L 3 third length H 1 first height W 1 first width W 2 second width W 3 third width Detailed Description The following disclosure provides many different implementations, or examples, for implementing different features of the provided subject matter. Specific embodim