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CN-115527898-B - Preheating ring and epitaxial equipment

CN115527898BCN 115527898 BCN115527898 BCN 115527898BCN-115527898-B

Abstract

The invention provides a preheating ring and epitaxial equipment, wherein the preheating ring comprises an annular main body, the annular main body comprises an upper surface, a lower surface opposite to the upper surface, an inner surface and an outer surface opposite to the inner surface, the annular main body further comprises a channel, the channel is arranged at the position of the preheating ring corresponding to an exhaust port of a processing chamber, the channel penetrates through the annular main body, and an included angle larger than zero is formed between the channel and the vertical direction. The channel reduces the pressure difference between the upper cavity and the lower cavity and avoids the purge gas from rushing up from the gap to the vicinity of the edge of the substrate.

Inventors

  • ZHAO HONGBO
  • WANG WEI

Assignees

  • 江苏天芯微半导体设备有限公司

Dates

Publication Date
20260512
Application Date
20220930

Claims (10)

  1. 1. The preheating ring is applied to epitaxial equipment, the epitaxial equipment comprises a processing chamber, a base and a preheating ring, the base is arranged in the processing chamber and used for bearing a substrate, the preheating ring is arranged around the base, the processing chamber comprises an air inlet and an air outlet, the air inlet is used for introducing process gas to process the substrate, and the air outlet is used for discharging the process gas after the process treatment out of the processing chamber, and the preheating ring is characterized in that the preheating ring comprises the air inlet and the air outlet, and the air inlet is used for introducing the process gas to process the substrate and discharging the process gas after the process treatment out of the processing chamber. An annular body including an upper surface, a lower surface opposite the upper surface, an inner surface, and an outer surface opposite the inner surface; The annular main body further comprises a channel, wherein the channel is arranged at the position of the preheating ring corresponding to the exhaust port of the processing chamber, the channel penetrates through the annular main body, an included angle larger than zero is formed between the channel and the vertical direction, the channel comprises a first port and a second port, the first port is arranged on the upper surface or the outer surface, the second port is arranged on the lower surface and is close to the inner surface, the first port is arranged at one end of the channel, the second port is arranged at the other end of the channel, and the sectional area of the second port is larger than that of the first port; the annular main body comprises an upper ring body and a lower ring body arranged below the upper ring body, the inner surface of the lower ring body is provided with a flange, and the flange is used for reducing a gap between the base and the preheating ring; The channel comprises an upper section channel and a lower section channel, wherein the upper section channel is formed on the upper ring body, and the lower section channel is formed on the lower ring body.
  2. 2. The preheat ring of claim 1, wherein the flange is disposed on an inner surface of the annular body at a location of the preheat ring corresponding to an exhaust port of the process chamber.
  3. 3. The preheat ring of claim 1, wherein the upper channel is formed by a recess in a lower surface of an upper ring body and the lower channel is formed through both the upper and lower surfaces of the lower ring body.
  4. 4. A preheat ring as defined in claim 3, wherein the upper ring body is annular and the lower ring body has an inner diameter at a location of the preheat ring corresponding to the exhaust port of the process chamber that is greater than an inner diameter at other locations of the lower ring body, thereby forming the flange.
  5. 5. The preheat ring of any of claims 1-2, wherein the channel is at least one.
  6. 6. The preheat ring of claim 5, wherein the channel is circular in cross-section.
  7. 7. The preheat ring of claim 5, wherein the channel is kidney-shaped in cross-section.
  8. 8. The preheat ring of claim 5, wherein the first port cross-sectional area of the channel varies from channel to channel, the first port cross-sectional area of the channel closest to the exhaust port location being the smallest.
  9. 9. The preheat ring of any of claims 1-2, wherein the material of the preheat ring comprises at least one of quartz, silicon carbide, graphite, ceramic, sapphire.
  10. 10. An epitaxial apparatus, comprising: the processing chamber comprises an air inlet and an air outlet, wherein the air inlet is used for introducing process gas to process the substrate, and the air outlet is used for discharging the process gas after the process treatment out of the processing chamber; A susceptor disposed within the processing chamber for carrying the substrate; The preheat ring of any of claims 1-9, disposed about a susceptor.

Description

Preheating ring and epitaxial equipment Technical Field The invention relates to the technical field of semiconductor equipment, in particular to a preheating ring and epitaxial equipment. Background An epitaxial process is a process of growing a thin film, such as a silicon germanium film or a doped film, on a substrate (or wafer). The prior art generally employs an epitaxy apparatus to accomplish the above-described epitaxy process. The prior art epitaxial apparatus includes a process chamber, a susceptor for carrying a substrate, and a preheat ring disposed around the susceptor for preheating a process gas. The base and the preheating ring divide the processing chamber into an upper cavity and a lower cavity, process gas is introduced into the upper cavity, so that the substrate is processed, purge gas is introduced into the lower cavity, undesired deposition of the process gas in the lower cavity is prevented, and once the deposition in the lower cavity falls off, particles are formed, so that the quality of film deposition is finally affected. But there is 3-5mm clearance between base and the preheating ring, because the pressure differential of going up cavity and lower cavity, so the sweep gas of lower cavity can upwelle to the upper cavity through the clearance between base and the preheating ring, and the sweep gas of surging can form the vortex around the base to the film deposition thickness at substrate edge has been influenced. Disclosure of Invention The invention aims to provide a preheating ring and epitaxial equipment, which are used for solving the problem of uneven deposition of the film thickness at the edge of a substrate. In order to achieve the above object, the present invention is realized by the following technical scheme: There is provided a preheat ring for an epitaxial apparatus, the epitaxial apparatus including a process chamber, a susceptor disposed in the process chamber for carrying a substrate, and a preheat ring disposed around the susceptor, the process chamber including an inlet for introducing a process gas to process the substrate and an outlet for exhausting the process gas after the process from the process chamber, comprising: an annular body including an upper surface, a lower surface opposite the upper surface, an inner surface, and an outer surface opposite the inner surface; The annular main body further comprises a channel, the channel is arranged at the position of the preheating ring corresponding to the exhaust port of the processing chamber, the channel penetrates through the annular main body, and an included angle larger than zero is formed between the channel and the vertical direction. Optionally, the channel includes a first port and a second port, the first port being located at one end of the channel and the second port being located at the other end of the channel. Optionally, the first port is disposed on the upper surface or the outer surface, the second port is disposed on the lower surface, and the second port is disposed near the inner surface. Optionally, the second port cross-sectional area is greater than the first port cross-sectional area. Optionally, the annular body further comprises a flange disposed on an inner surface of the annular body at a location of the preheat ring corresponding to the exhaust port of the process chamber. Optionally, the annular main body includes an upper ring body and a lower ring body disposed below the upper ring body. Optionally, the channel includes an upper channel and a lower channel, the upper channel is formed by a groove on the lower surface of the upper ring body, and the lower channel is formed by penetrating the upper surface and the lower surface of the lower ring body. Optionally, the upper ring body is annular, and an inner diameter of the lower ring body at a position of the preheating ring corresponding to the exhaust port of the processing chamber is larger than an inner diameter of the lower ring body at other positions, so as to form the flange. Optionally, the channel is at least one. Optionally, the cross section of the channel is a circular hole. Optionally, the cross section of the channel is a kidney-shaped hole. Optionally, the first port cross-sectional area of the channel varies from channel to channel, with the first port cross-sectional area of the channel closest to the location of the exhaust being the smallest. Optionally, the material of the preheating ring includes at least one of quartz, silicon carbide, graphite, ceramic, and sapphire. There is also provided an epitaxial apparatus comprising: the processing chamber comprises an air inlet and an air outlet, wherein the air inlet is used for introducing process gas to process the substrate, and the air outlet is used for discharging the process gas after the process treatment out of the processing chamber; A susceptor disposed within the processing chamber for carrying the substrate; as with the preheat ring described above,