CN-115565929-B - Wafer edge protection device

CN115565929BCN 115565929 BCN115565929 BCN 115565929BCN-115565929-B

Abstract

The invention provides a wafer edge protection device which comprises a cavity and a base, wherein a heat table is arranged in the cavity, the bottom of the heat table is fixed on the base, a wafer placing position is arranged in the middle of the surface of the heat table, a process gas inlet is formed in the outer wall of the cavity, a cavity lining is arranged on the inner wall of the cavity around the heat table, a ceramic ring is arranged on the edge of the inner ring surface of the ceramic ring, the protective edge is used for covering the edge of a wafer to be processed, a limit clamping groove is formed in the edge of the inner ring of the cavity lining, a guide lug matched with the limit clamping groove is arranged on the outer ring of the ceramic ring, the guide lug is embedded into the limit clamping groove, the ceramic ring is enabled to be in lap joint with the inner ring of the cavity lining, and a driving end of the lifting mechanism is connected with the base to drive the heat table to move upwards/downwards in the cavity. The device provided by the invention is convenient to operate, and can accurately and effectively protect the edge of the wafer in the deposition process.

Inventors

ZHANG PENGBING
CHEN SHIMING

Assignees

上海谙邦半导体设备有限公司

Dates

Publication Date: 20260512
Application Date: 20220919

Claims (8)

1. A wafer edge protection device, comprising: The process chamber comprises a chamber body and a base, a heat table is arranged in the chamber body, the bottom of the heat table is fixedly arranged on the base, a wafer placing position is arranged in the middle of the surface of the heat table, a process gas inlet is formed in the outer wall of the chamber body above the surface of the heat table, and a chamber liner is arranged on the inner wall of the chamber body around the heat table in a circle; The ceramic ring is of an annular structure, the edge of the surface of the inner ring of the ceramic ring extends towards the center of the ceramic ring to form a protection edge, a wafer edge accommodating cavity is formed in the inner side of the protection edge and is used for covering the edge of a wafer to be processed, a limit clamping groove is formed in the edge of the inner ring of the cavity liner, a guide lug matched with the limit clamping groove is arranged on the outer ring of the ceramic ring, and the guide lug is embedded into the limit clamping groove to enable the ceramic ring to be lapped on the inner ring of the cavity liner; the lifting mechanism is connected with the base to drive the heat table to move upwards/downwards in the cavity, and when the lifting mechanism drives the heat table to move upwards, the surface of the heat table drives the ceramic ring to move upwards to separate from the cavity liner, so that the protective edge of the ceramic ring covers the edge of a wafer to be processed; The ceramic ring is internally provided with an annular groove from the bottom wall, a communication channel is arranged between the annular groove and the wafer edge accommodating cavity, W/H >4 is met between the height H and the width W of the communication channel, and the communication channel communicates the annular groove with the wafer edge accommodating cavity; The base is provided with a gas channel towards the inside of the heat table, the gas outlet end of the gas channel is communicated with the annular groove, and the gas inlet end of the gas channel is filled with shielding gas, so that the shielding gas enters the annular groove from the gas channel, passes through the communication channel and then enters the wafer edge accommodating cavity, and the edge of the wafer to be processed enters the purging.
2. The wafer edge protection device of claim 1, wherein the gas channel is provided with a plurality of the gas outlet ends, the plurality of gas outlet ends being uniformly distributed in the annular groove.
3. The wafer edge protection device of claim 1, wherein the edge of the protective rim inner ring surface of the ceramic ring is provided as a chamfer.
4. A wafer edge protection device according to claim 3, wherein the angle θ at the chamfer is 30-60 °.
5. The wafer edge protection device of claim 1, wherein a gas homogenizing device is further disposed in the chamber, and the gas homogenizing device is fixed between the surface of the thermal stage and the process gas inlet, so that the process gas entering the chamber through the process gas inlet passes through the gas homogenizing device and is then deposited on the wafer to be processed on the wafer placement position on the surface of the thermal stage.
6. The wafer edge protection device according to claim 1, wherein the heat table comprises a horizontal table surface and a vertical supporting seat, the side section of the heat table is in a T shape, the bottom of the vertical supporting seat is fixed on the base, a corrugated pipe is fixed on the periphery of the base in a sealing mode, the corrugated pipe is connected with the side wall of the cavity and the base to jointly surround the base to form the process cavity, and the corrugated pipe can compress or stretch along with the driving of the base by the lifting mechanism.
7. The wafer edge protection device according to claim 1, wherein a plurality of limit clamping grooves are uniformly formed in the edge of the inner ring of the cavity liner at intervals, and a plurality of guide lugs are correspondingly arranged on the outer ring of the ceramic ring at intervals.
8. The wafer edge protection device of claim 1, wherein the width L of the protective edge of the ceramic ring is 3-6mm.

Description

Wafer edge protection device Technical Field The invention relates to the technical field of semiconductors, in particular to a wafer edge protection device. Background Chemical Vapor Deposition (CVD), which refers to the process of synthesizing coatings or nanomaterials by reacting chemical gases or vapors on the surface of a substrate, is the most widely used technique in the semiconductor industry for depositing a wide variety of materials, including a wide range of insulating materials, most metallic materials and metallic alloy materials. During Metal Chemical Vapor Deposition (MCVD), the wafer edge needs to be protected, and if the wafer edge is not protected, metal will also deposit on the wafer edge and back side, which is not allowed during the process. In the existing Metal Chemical Vapor Deposition (MCVD) process, the wafer edge is usually protected by adopting a physical shielding mode such as a protective cover plate, a protective film and the like, and the problems of inconvenient operation, inaccurate covering position and the like exist in the use process, so that the wafer edge cannot be accurately and effectively protected, the metal deposition at the inner side of the wafer edge is uneven, and the deposition process is influenced. Disclosure of Invention Therefore, the embodiment of the application provides a wafer edge protection device to achieve the purpose of accurately and effectively protecting the wafer edge from depositing metal. The embodiment of the application provides a wafer edge protection device, which comprises the following technical scheme: The process chamber comprises a chamber body and a base, a heat table is arranged in the chamber body, the bottom of the heat table is fixedly arranged on the base, a wafer placing position is arranged in the middle of the surface of the heat table, a process gas inlet is formed in the outer wall of the chamber body above the surface of the heat table, and a chamber liner is arranged on the inner wall of the chamber body around the heat table in a circle; The ceramic ring is of an annular structure, the edge of the surface of the inner ring of the ceramic ring extends towards the center of the ceramic ring to form a protection edge, a wafer edge accommodating cavity is formed in the inner side of the protection edge and is used for covering the edge of a wafer to be processed, a limit clamping groove is formed in the edge of the inner ring of the cavity liner, a guide lug matched with the limit clamping groove is arranged on the outer ring of the ceramic ring, and the guide lug is embedded into the limit clamping groove to enable the ceramic ring to be lapped on the inner ring of the cavity liner; The lifting mechanism is connected with the base, so as to drive the heat table to move upwards/downwards in the cavity, when the lifting mechanism drives the heat table to move upwards, the surface of the heat table drives the ceramic ring to move upwards to separate from the cavity lining, so that the protective edge of the ceramic ring covers the edge of a wafer to be processed, and when the lifting mechanism drives the heat table to move downwards, the guide protruding block of the outer ring of the ceramic ring is embedded into the limit clamping groove of the cavity lining, so that the ceramic ring is separated from the surface of the heat table and is lapped on the inner ring of the cavity lining. According to one embodiment of the application, the ceramic ring is provided with an annular groove from the bottom wall to the inside, a communication channel is arranged between the annular groove and the wafer edge accommodating cavity, and the communication channel communicates the annular groove with the wafer edge accommodating cavity; The base is provided with a gas channel towards the inside of the heat table, the gas outlet end of the gas channel is communicated with the annular groove, and the gas inlet end of the gas channel is filled with shielding gas, so that the shielding gas enters the annular groove from the gas channel, passes through the communication channel and then enters the wafer edge accommodating cavity, and the edge of the wafer to be processed enters the purging. According to one embodiment of the application, W/H >4 is satisfied between the height H and the width W of the communication channel. According to one embodiment of the present application, the gas channel is provided with a plurality of gas outlet ends, and the plurality of gas outlet ends are uniformly distributed in the annular groove. According to one embodiment of the application, the edge of the surface of the inner ring of the protective edge of the ceramic ring is provided with a chamfer. According to one embodiment of the application, the angle θ at the chamfer is 30-60 °. According to one embodiment of the application, a gas homogenizing device is further arranged in the cavity, and the gas homogenizing device is fixed between the surface of th