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CN-115568234-B - Perovskite solar cell and preparation method thereof

CN115568234BCN 115568234 BCN115568234 BCN 115568234BCN-115568234-B

Abstract

The invention discloses a perovskite solar cell and a preparation method thereof. The method comprises the steps of spin-coating a mixed solution of lead iodide and HIAM-4024 or HIAM-4025 on the surface of an electron transport layer, annealing to obtain a lead iodide layer, spin-coating an organic halide solution on the surface of the lead iodide layer, and annealing to obtain a perovskite layer. The invention introduces HIAM-4024 or HIAM-4025 into the lead iodide layer, and the high-energy photons can be filtered through HIAM-4024 or HIAM-4025. Through down conversion it emits photons in the visible range which are further utilized by the underlying perovskite absorber, thereby increasing the light energy utilization of the perovskite solar cell. And, HIAM-4024 and HIAM-4025 can both effectively filter ultraviolet radiation damaging the device, so that the light energy utilization rate of the perovskite device is further improved.

Inventors

  • Hu hanlin
  • LIANG XIAO
  • ZHU QUANYAO

Assignees

  • 深圳职业技术学院

Dates

Publication Date
20260505
Application Date
20220922

Claims (10)

  1. 1. A method of fabricating a perovskite solar cell, comprising the steps of: Providing a conductive substrate; Preparing an electron transport layer on the surface of the conductive substrate; Preparing a perovskite layer on the surface of the electron transport layer, wherein the perovskite layer comprises a perovskite body and HIAM-4024 or HIAM-4025; preparing a hole transport layer on the surface of the perovskite layer; Preparing an electrode on the surface of the hole transport layer; the method for preparing the perovskite layer on the surface of the electron transport layer comprises the following steps of: Providing a mixed solution of lead iodide and HIAM-4024 or HIAM-4025, and providing an organic halide solution; Spin-coating the mixed solution of lead iodide and HIAM-4024 or HIAM-4025 on the surface of the electron transport layer, and performing a first annealing treatment to obtain a lead iodide layer; spin-coating the organic halide solution on the surface of the lead iodide layer, and carrying out second annealing treatment to obtain the perovskite layer; The organic metal frame material HIAM-4024 is prepared by mixing ZrCl 4 、H 4 BTATC, benzoic acid and DMF; The organometallic framework material HIAM-4025 is prepared by mixing ZrCl 4 、H 4 NSATC, benzoic acid and DMF.
  2. 2. The method for manufacturing a perovskite solar cell according to claim 1, wherein the mass ratio of HIAM-4024 or HIAM-4025 in the perovskite layer is 0.1-10%; The perovskite body is ABX 3 , wherein A comprises methylamine cations, formamidine cations and cesium cations, B comprises lead cations, and X comprises chloride anions, bromide anions and iodide anions.
  3. 3. The method for producing a perovskite solar cell according to claim 1, wherein the method for producing a mixed solution of lead iodide and HIAM-4024 or HIAM-4025 comprises the steps of: dissolving lead iodide in a solvent to obtain a lead iodide solution; Adding HIAM-4024 or HIAM-4025 into the lead iodide solution to obtain a mixed solution of the lead iodide and HIAM-4024 or HIAM-4025; Wherein the solvent is one or more than two of N, N-dimethylformamide, dimethyl sulfoxide, N-methylpyrrolidone and r-butyrolactone.
  4. 4. The method for manufacturing a perovskite solar cell according to claim 1, wherein the addition amounts of lead iodide and HIAM-4024 or HIAM-4025 in the mixed solution of lead iodide and HIAM-4024 or HIAM-4025 are 1-3 mol and 0.1-8 mg, respectively.
  5. 5. The method for preparing a perovskite solar cell according to claim 1, wherein in the step of spin-coating the mixed solution of lead iodide and HIAM-4024 or HIAM-4025 on the surface of the electron transport layer, the spin-coating parameters include a rotation speed of 1000-5000 r/s and a time of 20-100 s; And/or the parameters of the first annealing treatment comprise the temperature of 50-120 ℃ and the time of 50-150 s.
  6. 6. The method of claim 1, wherein the organic halide solution is a FAI, csI, MACl, MABr-containing solution.
  7. 7. The method for manufacturing a perovskite solar cell according to claim 6, wherein the mass ratio of FAI, csI, MACl, MABr is (40-80): 10-30): 3-10: (3-10).
  8. 8. The method for preparing a perovskite solar cell according to claim 1, wherein in the step of spin-coating the organic halide solution on the surface of the lead iodide layer, the spin-coating parameters include a rotation speed of 1000-3000 r/s and a time of 40-120 s; And/or parameters of the second annealing treatment comprise the temperature of 80-150 ℃ and the time of 600-2000 s.
  9. 9. The method for producing a perovskite solar cell according to claim 1, wherein, The preparation method of HIAM-4024 comprises the steps of mixing 10-30 mg of ZrCl 4 、5~20 mg H 4 BTATC, 500-1000 mg of benzoic acid and 6 mL DMF to obtain a mixture, heating the mixture in a 100 ℃ oven for 2 days, cooling to room temperature to obtain HIAM-4024; Or the preparation method of HIAM-4025 comprises the steps of mixing 10-30 mg of ZrCl 4 、5~20 mg H 4 NSATC, 500-1000 mg of benzoic acid and 6 mL DMF to obtain a mixture, heating the mixture in a 100 ℃ oven for 2 days, and cooling to room temperature to obtain HIAM-4025.
  10. 10. A perovskite solar cell prepared by the method of any one of claims 1 to 9.

Description

Perovskite solar cell and preparation method thereof Technical Field The invention relates to the technical field of solar photovoltaics, in particular to a perovskite solar cell and a preparation method thereof. Background Perovskite solar cells are a potentially subverted technology in the photovoltaic field because they have excellent power conversion efficiency (currently the highest authentication efficiency is 25.7%) and are expected to reduce costs due to ease of solution handling. Currently, the instability of perovskite devices is a major challenge severely limiting their commercialization. Perovskite materials with ionic crystal structures are unstable and degrade rapidly under high humidity, light, ultraviolet light, high temperature and stress. Firstly, perovskite crystals are easy to react with water and oxygen to cause device decomposition, and secondly, perovskite films rapidly evolve under continuous illumination or heating, including halogen separation, ion migration and the like. Notably, the softness of the I -、Pb2+ ion, accompanied by weak Pb-I bonds, controls the process of intrinsic degradation of the material. I - and Pb 2+ are easy to undergo oxidation-reduction reaction, further generate iodine and metallic lead, initiate chemical chain reaction and accelerate the degradation of perovskite. In addition, most researchers believe Ultraviolet (UV) radiation is the most damaging region of the solar spectrum. Various attempts have been reported to improve intrinsic materials and reduce deep defect states, such as doping, optimizing thin film processing, grain boundary modification, and the like. However, most of these additives are sacrificial agents aiming at a defect, and the preparation is complex, the cost is high, and the method is not suitable for industrial production. Accordingly, there is a need for improvement and development in the art. Disclosure of Invention In view of the above-mentioned shortcomings of the prior art, the present invention aims to provide a perovskite solar cell and a preparation method thereof, which aims to solve the problems of defects and ultraviolet radiation of the existing perovskite thin film, resulting in low photoelectric conversion efficiency of the device. The technical scheme of the invention is as follows: the first aspect of the invention provides a method for preparing a perovskite solar cell, comprising the steps of: Providing a conductive substrate; Preparing an electron transport layer on the surface of the conductive substrate; Preparing a perovskite layer on the surface of the electron transport layer, wherein the perovskite layer comprises a perovskite body and HIAM-4024 or HIAM-4025; preparing a hole transport layer on the surface of the perovskite layer; Preparing an electrode on the surface of the hole transport layer; the method for preparing the perovskite layer on the surface of the electron transport layer comprises the following steps of: Providing a mixed solution of lead iodide and HIAM-4024 or HIAM-4025, and providing an organic halide solution; Spin-coating the mixed solution of lead iodide and HIAM-4024 or HIAM-4025 on the surface of the electron transport layer, and performing a first annealing treatment to obtain a lead iodide layer; And spin-coating the organic halide solution on the surface of the lead iodide layer, and carrying out second annealing treatment to obtain the perovskite layer. It is well known that ultraviolet radiation can cause oxygen vacancies and defects in the perovskite crystal to develop, thereby contributing to perovskite device damage. In the invention, an organic metal framework material (MOF material) HIAM-4024 or HIAM-4025 is introduced into a lead iodide layer, and the MOF contains two amino groups (-NH 2) from the aspect of ligand structure, HIAM-4024 contains an S element, and HIAM-4025 contains a Se element. Wherein, the amino group can effectively passivate the vacancy defect of the perovskite surface, and introduces higher divalent anion charge, greatly increases electrostatic interaction, and both S 2- and Se 2- form chemical bonds with Pb 2+ with high covalency to form a more stable perovskite structure. From the excitation and emission spectra, HIAM-4024 had an excitation peak of 550 nm and an emission peak of 640 nm, whereas HIAM-4025, which were completely different from the emission peak, had shifts in the near infrared region of 610 nm and 788 nm. Perovskite materials have strong absorption around 400nm and photoluminescence wavelength around 790 nm. Based on this, it was found that the excitation peaks of HIAM-4024 or HIAM-4025 all overlap well with the absorption of perovskite, which meets the requirement of efficient Frster resonance energy transfer from HIAM-4024 or HIAM-4025 to the adjacent perovskite layer. The results indicate that high energy photons may be filtered through layers HIAM-4024 and HIAM-4025. Through down-conversion, it emits photons in the visible range, whic