CN-115598794-B - Imaging lens and electronic device

Abstract

An imaging lens comprises an imaging lens group, and an optical axis passes through the imaging lens. The imaging lens group comprises a plurality of lenses, wherein the lenses comprise a first lens and a second lens, and each lens comprises at least one nanostructure layer and at least one structural connecting layer. The nanostructure layer is irregularly arranged, and comprises aluminum oxide crystals. The structure connecting layer is arranged between the surface of the first lens and the nano-structure layer and between the surface of the second lens and the nano-structure layer, and comprises at least one silicon dioxide film layer, and the silicon dioxide film layer is in physical contact with the bottom of the nano-structure layer. When the imaging lens satisfies a specific condition, the imaging quality can be maintained.

Inventors

• FAN CHENGWEI
• ZHOU MINGDA
• ZHANG JIANBANG
• LIN ZHENGFENG
• ZHU GUOQIANG

Assignees

• 大立光电股份有限公司

Dates

Publication Date

20260505

Application Date

20220224

Priority Date

20211029

Claims (20)

1. 1. An imaging lens, wherein an optical axis passes through the imaging lens, and comprises: An imaging lens group comprising a plurality of lenses, the plurality of lenses comprising: A first lens and a second lens, wherein the refractive index of the first lens is different from the refractive index of the second lens, and each comprises: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising an alumina crystal, the at least one nanostructure layer having a structure dimension of 98 nm to 420 nm, and The at least one structure connecting layer is arranged between the surface of the first lens and the at least one nano-structure layer and between the surface of the second lens and the at least one nano-structure layer, the at least one structure connecting layer comprises at least one silicon dioxide film layer, the at least one silicon dioxide film layer is in physical contact with the bottom of the at least one nano-structure layer, and the thickness of the at least one silicon dioxide film layer is 20 nm-150 nm; the imaging lens is provided with a transmittance attenuation index, wherein the transmittance attenuation index is related to the number of the plurality of lenses of the imaging lens group and a transmittance attenuation simulation constant; The number of the lenses of the imaging lens group is E, the transmittance attenuation analog constant is c, the imaging lens has an average transmittance corresponding to a light ray in a wavelength range 540 nm to 590 nm, the average transmittance is T 5459 , a difference between the refractive index of the first lens and the refractive index of the second lens is Δn, and the total number of the surfaces of the object side surface and the image side surface, in which the at least one nanostructure layer is disposed, of the plurality of lenses is N CS , which satisfies the following conditions: 0.85 ≤ Tdi ≤ 0.9; 90% ≤ T 5459 ; 0.065 Delta n is more than or equal to 0.82, and 0.8 ≤ N CS /2E ≤ 1。
2. 2. The imaging lens as claimed in claim 1, wherein the imaging lens has an average transmittance corresponding to a light ray in a wavelength range 520 nm to 540 nm, the average transmittance being T 5254 , which satisfies the following conditions: 90% ≤ T 5254 。
3. 3. The imaging lens as claimed in claim 2, wherein a light ray corresponding to a wavelength range 530 nm to 540 nm of the imaging lens has an average transmittance, and the average transmittance is T 5354 , which satisfies the following conditions: 90% ≤ T 5354 。
4. 4. an electronic device, comprising: the imaging lens as claimed in claim 1.
5. 5. An imaging lens, wherein an optical axis passes through the imaging lens, and comprises: An imaging lens group comprising a plurality of lenses, the plurality of lenses comprising: A first lens and a second lens, wherein the refractive index of the first lens is different from the refractive index of the second lens, and each comprises: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising an alumina crystal, the at least one nanostructure layer having a structure dimension of 98 nm to 420 nm, and The at least one structure connecting layer is arranged between the surface of the first lens and the at least one nano-structure layer and between the surface of the second lens and the at least one nano-structure layer, the at least one structure connecting layer comprises at least one silicon dioxide film layer, the at least one silicon dioxide film layer is in physical contact with the bottom of the at least one nano-structure layer, and the thickness of the at least one silicon dioxide film layer is 20 nm-150 nm; the imaging lens is provided with a transmittance attenuation index, wherein the transmittance attenuation index is related to the number of the plurality of lenses of the imaging lens group and a transmittance attenuation simulation constant; The number of the lenses of the imaging lens group is E, the transmittance attenuation analog constant is c, the imaging lens has an average transmittance corresponding to a light ray in a wavelength interval 540 nm to 590 nm, the average transmittance is T 5459 , the refractive index of the first lens is N1, the refractive index of the second lens is N2, and the total number of the surfaces of the object side surface and the image side surface, in which the at least one nanostructure layer is arranged, of the plurality of lenses is N CS , which satisfies the following conditions: 0.85 ≤ Tdi ≤ 0.9; 90% ≤ T 5459 ; n1 > 1.6; n2 < 1.6, and 0.8 ≤ N CS /2E ≤ 1。
6. 6. The imaging lens as claimed in claim 5, wherein a light ray corresponding to a wavelength range 520 nm to 540 nm of the imaging lens has an average transmittance, and the average transmittance is T 5254 , which satisfies the following conditions: 90% ≤ T 5254 。
7. 7. The imaging lens as claimed in claim 6, wherein a light ray corresponding to a wavelength range 530 nm to 540 nm of the imaging lens has an average transmittance, and the average transmittance is T 5354 , which satisfies the following conditions: 90% ≤ T 5354 。
8. 8. An electronic device, comprising: The imaging lens as claimed in claim 5.
9. 9. An imaging lens, wherein an optical axis passes through the imaging lens, and comprises: An imaging lens group comprising a plurality of lenses, at least three lenses of the plurality of lenses each comprising: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising an alumina crystal, the at least one nanostructure layer having a structure dimension of 98 nm to 420 nm, and The at least one structure connecting layer is arranged between the surface of each lens and the at least one nano-structure layer, the at least one structure connecting layer comprises at least one silicon dioxide film layer, the at least one silicon dioxide film layer is in physical contact with the bottom of the at least one nano-structure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm; The imaging lens group comprises a plurality of lenses, wherein the plurality of lenses in the imaging lens group are divided into a first lens group and a second lens group, the first lens group is closer to the object side than the second lens group, and the number of the lenses of the first lens group is smaller than that of the lenses of the second lens group; the first lens group comprises a high refractive index lens at the most image side, and an adjacent lens at one object side end of the high refractive index lens is a low refractive index lens; the second lens group comprises the rest lenses of an image side end of the first lens group, and the second lens group comprises at least one high refractive index lens; the imaging lens is provided with a transmittance attenuation index, wherein the transmittance attenuation index is related to the number of the plurality of lenses of the imaging lens group and a transmittance attenuation simulation constant; The number of the lenses of the imaging lens group is E, the transmittance attenuation analog constant is c, the imaging lens has an average transmittance corresponding to a light ray in a wavelength interval 540 nm to 590 nm, the average transmittance is T 5459 , and the total number of the surfaces of the object side surfaces and the image side surfaces of the plurality of nanostructure layers is N CS , which satisfies the following conditions: 0.85 ≤ Tdi ≤ 0.88; T 5459 with a content of 90% or less, and 0.5 ≤ N CS /2E ≤ 1。
10. 10. The imaging lens as claimed in claim 9, wherein the imaging lens has an average transmittance corresponding to a light ray in a wavelength range 520 nm to 540 nm, the average transmittance being T 5254 , which satisfies the following condition: 90% ≤ T 5254 。
11. 11. the imaging lens as claimed in claim 10, wherein a light ray corresponding to a wavelength range 530 nm to 540 nm of the imaging lens has an average transmittance, and the average transmittance is T 5354 , which satisfies the following conditions: 90% ≤ T 5354 。
12. 12. The imaging lens as claimed in claim 9, wherein the number of the plurality of lenses of the imaging lens group is E, and a total number of surfaces of an object side surface and an image side surface in which the plurality of nanostructure layers are disposed in the plurality of lenses is N CS , which satisfies the following condition: 0.8 ≤ N CS /2E ≤ 1。
13. 13. An electronic device, comprising: the imaging lens as claimed in claim 9.
14. 14. An imaging lens, wherein an optical axis passes through the imaging lens, and comprises: An imaging lens group comprising a plurality of lenses, at least three lenses of the plurality of lenses each comprising: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising an alumina crystal, the at least one nanostructure layer having a structure dimension of 98 nm to 420 nm, and The at least one structure connecting layer is arranged between the surface of each lens and the at least one nano-structure layer, the at least one structure connecting layer comprises at least one silicon dioxide film layer, the at least one silicon dioxide film layer is in physical contact with the bottom of the at least one nano-structure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm; The imaging lens group comprises a plurality of lenses, wherein the plurality of lenses in the imaging lens group are divided into a first lens group and a second lens group, the first lens group is closer to the object side than the second lens group, and the number of the lenses of the first lens group is smaller than that of the lenses of the second lens group; the first lens group comprises a high refractive index lens at the most image side, and an adjacent lens at one object side end of the high refractive index lens is a low refractive index lens; the second lens group comprises the rest lenses of an image side end of the first lens group, and the second lens group comprises at least one high refractive index lens; the imaging lens is provided with a transmittance attenuation index, wherein the transmittance attenuation index is related to the number of the plurality of lenses of the imaging lens group and a transmittance attenuation simulation constant; The number of the lenses of the imaging lens group is E, the transmittance attenuation analog constant is c, the imaging lens has an average transmittance corresponding to a light ray in a wavelength interval 540 nm to 590 nm, the average transmittance is T 5459 , and the total number of the surfaces of the object side surfaces and the image side surfaces of the plurality of nanostructure layers is N CS , which satisfies the following conditions: 0.81 ≤ Tdi ≤ 0.84; t 5459 % or less and 92% or less, in an amount of 87.6%, and 0.59 ≤ N CS /2E ≤ 1。
15. 15. The imaging lens as claimed in claim 14, wherein a light ray corresponding to a wavelength range 520 nm to 540 nm of the imaging lens has an average transmittance, and the average transmittance is T 5254 , which satisfies the following conditions: 86% ≤ T 5254 。
16. 16. the imaging lens as claimed in claim 15, wherein a light ray corresponding to a wavelength range 530 nm to 540 nm of the imaging lens has an average transmittance, and the average transmittance is T 5354 , which satisfies the following conditions: 86% ≤ T 5354 。
17. 17. The imaging lens as claimed in claim 14, wherein a number of the plurality of lenses of the imaging lens group is E, and a total number of surfaces of the object side surface and the image side surface, in which the at least one nanostructure layer is disposed, of the plurality of lenses is N CS , which satisfies the following condition: 0.9 ≤ N CS /2E ≤ 1。
18. 18. An electronic device, comprising: The imaging lens as claimed in claim 14.
19. 19. An imaging lens, wherein an optical axis passes through the imaging lens, and comprises: An imaging lens group comprising a plurality of lenses, at least three lenses of the plurality of lenses each comprising: At least one nanostructure layer, the at least one nanostructure layer being irregularly arranged, the at least one nanostructure layer comprising an alumina crystal, the at least one nanostructure layer having a structure dimension of 98 nm to 420 nm, and The at least one structure connecting layer is arranged between the surface of each lens and the at least one nano-structure layer, the at least one structure connecting layer comprises at least one silicon dioxide film layer, the at least one silicon dioxide film layer is in physical contact with the bottom of the at least one nano-structure layer, and the thickness of the at least one silicon dioxide film layer is between 20 nm and 150 nm; The imaging lens group comprises a plurality of lenses, wherein the plurality of lenses in the imaging lens group are divided into a first lens group and a second lens group, the first lens group is closer to the object side than the second lens group, and the number of the lenses of the first lens group is smaller than that of the lenses of the second lens group; the first lens group comprises a high refractive index lens at the most image side, and an adjacent lens at one object side end of the high refractive index lens is a low refractive index lens; the second lens group comprises the rest lenses of an image side end of the first lens group, and the second lens group comprises at least one high refractive index lens; the imaging lens is provided with a transmittance attenuation index, wherein the transmittance attenuation index is related to the number of the plurality of lenses of the imaging lens group and a transmittance attenuation simulation constant; The number of the lenses of the imaging lens group is E, the transmittance attenuation analog constant is c, the imaging lens has an average transmittance corresponding to a light ray in a wavelength interval 540 nm to 590 nm, the average transmittance is T 5459 , and the total number of the surfaces of the object side surfaces and the image side surfaces of the plurality of nanostructure layers is N CS , which satisfies the following conditions: 0.78 ≤ Tdi ≤ 0.80; t 5459 -91% or more and 0.67 ≤ N CS /2E ≤ 1。
20. 20. The imaging lens as claimed in claim 19, wherein a light ray corresponding to a wavelength range 520 nm to 540 nm of the imaging lens has an average transmittance, and the average transmittance is T 5254 , which satisfies the following conditions: 84% ≤ T 5254 。

Description

Imaging lens and electronic device Technical Field The present disclosure relates to an imaging lens, and more particularly to an imaging lens for use in a portable electronic device. Background In recent years, portable electronic devices, such as intelligent electronic devices, tablet computers, etc., have been rapidly developed, and imaging lenses mounted on the portable electronic devices have been rapidly developed. With the progress of technology, the number of lenses is gradually increased to pursue better imaging quality, but increasing the number of lenses tends to cause problems such as reduced transmittance and reflection of stray light. Therefore, developing an imaging lens that can maintain imaging quality, reduce development cost waste, and shorten development time is an industrially important and urgent problem to be solved. Disclosure of Invention The present disclosure provides an imaging lens and an electronic device, wherein a nanostructure layer and a structural connection layer are disposed through a lens, so that the imaging lens can maintain imaging quality after increasing the number of lenses, and the transmittance of the imaging lens is simulated with the assistance of a transmittance attenuation index, thereby reducing the cost waste of research and development and shortening the research and development time. An embodiment of the present disclosure provides an imaging lens including an imaging lens group, and an optical axis passing through the imaging lens. The imaging lens group comprises a plurality of lenses, wherein the lenses comprise a first lens and a second lens, and the refractive index of the first lens is different from that of the second lens. The first lens and the second lens respectively comprise at least one nano-structure layer and at least one structure connecting layer. The nanostructure layer is irregularly arranged, the nanostructure layer comprises aluminum oxide crystals, and the structural dimension of the nanostructure layer is between 98 nm and 420 nm. The structure connecting layer is arranged between the surface of the first lens and the nano-structure layer and between the surface of the second lens and the nano-structure layer, and comprises at least one silicon dioxide film layer, wherein the silicon dioxide film layer is in physical contact with the bottom of the nano-structure layer, and the thickness of the silicon dioxide film layer is between 20 nm and 150 nm. The imaging lens has a transmissivity attenuation index, and the transmissivity attenuation index is related to the number of lenses of the imaging lens group and a transmissivity attenuation analog constant. The transmittance attenuation index is Tdi, the number of lenses of the imaging lens group is E, the transmittance attenuation simulation constant is c, a light ray of the imaging lens corresponding to the wavelength interval 540 nm to 590 nm has an average transmittance, the average transmittance is T 5459, a difference between the refractive index of the first lens and the refractive index of the second lens is Δn, and the total number of surfaces of the object side surface and the image side surface of the lens provided with the nanostructure layer is N CS, which satisfies the following conditions: Wherein Tdi is more than or equal to 0.85T 5459 is more than or equal to 0.9 percent and less than or equal to 90 percent; delta N is more than or equal to 0.065 and less than or equal to 0.82; N CS/2E is more than or equal to 0.8 and less than or equal to 1. The imaging lens according to the embodiment of the preceding paragraph, wherein the imaging lens has an average transmittance corresponding to a light ray in the wavelength range 520 nm to 540 nm, and the average transmittance is T 5254, which satisfies the following condition that 90% T 5254 is not more than 90%. The imaging lens according to the embodiment of the preceding paragraph, wherein the imaging lens has an average transmittance corresponding to a light ray in the wavelength range 530 nm to 540 nm, and the average transmittance is T 5354, which satisfies the following condition that 90% T 5354 is not more than 90%. An embodiment of the present disclosure provides an electronic device including the imaging lens of the foregoing embodiment. An embodiment of the present disclosure provides an imaging lens including an imaging lens group, and an optical axis passing through the imaging lens. The imaging lens group comprises a plurality of lenses, wherein the lenses comprise a first lens and a second lens, and the refractive index of the first lens is different from that of the second lens. The first lens and the second lens respectively comprise at least one nano-structure layer and at least one structure connecting layer. The nanostructure layer is irregularly arranged, the nanostructure layer comprises aluminum oxide crystals, and the structural dimension of the nanostructure layer is between 98 nm and 420 nm. The structu