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CN-115605068-B - Efficient heat dissipation optical module TEC device and use method

CN115605068BCN 115605068 BCN115605068 BCN 115605068BCN-115605068-B

Abstract

The invention discloses a high-efficiency heat dissipation optical module TEC device and a use method thereof, the high-efficiency heat dissipation optical module TEC device relates to an optical module, comprises a TEC assembly assembled in the optical module, the TEC assembly comprises an upper ceramic cover plate, a lower ceramic cover plate, more than one copper plate, a P-type semiconductor, an N-type semiconductor and an N+ type semiconductor. In the invention, the composition structure of the TEC assembly is optimized, which is equivalent to the integral refrigeration of the TEC assembly, and the additional heat dissipation problem of the TEC assembly is not needed to be considered, thus breaking the traditional refrigeration mode, improving the heat dissipation efficiency of the optical module and saving the cost required by heat dissipation.

Inventors

  • XIONG DA
  • LI LINKE
  • WU TIANSHU
  • YANG XIANWEN
  • ZHANG JIAN

Assignees

  • 武汉联特科技股份有限公司

Dates

Publication Date
20260512
Application Date
20221103

Claims (6)

  1. 1. The high-efficiency heat dissipation optical module TEC device relates to an optical module (1) and is characterized by comprising a TEC assembly (2) assembled in the optical module (1), wherein the TEC assembly (2) comprises an upper ceramic cover plate (3), a lower ceramic cover plate (8), more than one copper plate (4), a P-type semiconductor (5), an N-type semiconductor (6) and an N+ type semiconductor (7); The P-type semiconductors (5) and the N-type semiconductors (6) are distributed in a staggered mode one by one and are uniformly arranged at intervals to form an S-type loop, the copper plates (4) are horizontally arranged at the tops of the P-type semiconductors (5) and the N-type semiconductors (6) in a transverse mode to form semiconductor groups, the N+ type semiconductors (7) are horizontally arranged between two adjacent semiconductor groups, the upper ceramic cover plates (3) are horizontally arranged at the tops of the copper plates (4), and the lower ceramic cover plates (8) are horizontally arranged at the bottoms of the N+ type semiconductors (7); in the S-shaped loop, one end facing to the current input direction of the power supply end is set as the N-type semiconductor (6); The energy level relationship among the copper plate (4), the P-type semiconductor (5), the N-type semiconductor (6) and the N+ type semiconductor (7) is that the P-type semiconductor (5) < the copper plate (4) < the N-type semiconductor (6) < the N+ type semiconductor (7).
  2. 2. The efficient heat dissipation optical module TEC device as defined in claim 1, wherein one N-type semiconductor (6) is arranged between two adjacent P-type semiconductors (5) in the S-type loop, and one P-type semiconductor (5) is arranged between two adjacent N-type semiconductors (6).
  3. 3. The efficient heat dissipation optical module TEC device as defined in claim 1, wherein the semiconductor group comprises a plurality of P-type semiconductors (5) and N-type semiconductors (6) which are fixed on the bottom surface of the copper plate (4) at intervals, and the N+ type semiconductors (7) are horizontally connected between the P-type semiconductors (5)/N-type semiconductors (6) and the bottoms of the N-type semiconductors (6)/P-type semiconductors (5) of two adjacent semiconductor groups.
  4. 4. The efficient heat dissipation optical module TEC device as recited in claim 1, wherein the N+ type semiconductor (7) comprises a straight plate type common member (701) and an L-type electrode member (702), the common member (701) is provided with a plurality of electrode members for horizontally or longitudinally connecting two adjacent semiconductor groups, the electrode member (702) is provided with at least two electrode members for connecting the P type semiconductor (5) or the N type semiconductor (6) in each semiconductor group at the head end and the tail end of the S-type loop to a power supply end.
  5. 5. The efficient heat dissipation optical module TEC device as defined in claim 4, wherein one end of the lower ceramic cover plate (8) extends outwards beyond the upper ceramic cover plate (3), and the two electrode pieces (702) are respectively attached to the end of the lower ceramic cover plate (8) in a mirror image mode and are respectively communicated with the positive electrode and the negative electrode of the power supply end.
  6. 6. The efficient heat dissipation optical module TEC device as defined in claim 1, wherein the N+ type semiconductor (7) is the N type semiconductor (6) containing high concentration of phosphorus, and electrons in the N+ type semiconductor (7) are in a higher energy level state and are more prone to losing electrons.

Description

Efficient heat dissipation optical module TEC device and use method Technical Field The invention relates to the technical field of optical modules, in particular to an optical module TEC device with efficient heat dissipation and a use method thereof. Background At present, the heat dissipation problem of the optical module is still a place which needs to be considered in the development of the optical communication field, especially the heat productivity of the high-speed optical module is huge, and the heat dissipation problem is considered in the aspects of efficient heat dissipation and lower cost. The heat dissipation of the optical module generally depends on the TEC. TEC, semiconductor refrigerator, is a solid refrigeration technology, and its principle is that the Peltier effect of thermoelectric material is that when two different conductors form a loop, if a direct current is given to the loop, one node in the loop releases heat, another node refrigerates, and when the current direction is reversed, the heat flow direction is reversed. In the prior art, a traditional optical module TEC is generally formed by combining tens to tens of grains, however, the refrigerating capacity of a single thermoelectric material grain is limited, and even though the total heat dissipation effect of the TEC is still affected by accumulating and combining tens of grains. Disclosure of Invention The invention aims to solve the technical problem of providing an optical module TEC device which improves the heat dissipation efficiency and saves the heat dissipation cost by optimizing the composition mode of a TEC and a use method. In order to solve the technical problems, the technical scheme is that the optical module TEC device with high-efficiency heat dissipation relates to an optical module and comprises a TEC assembly assembled in the optical module, wherein the TEC assembly comprises an upper ceramic cover plate, a lower ceramic cover plate, more than one copper plate, a P-type semiconductor, an N-type semiconductor and an N+ type semiconductor; The P-type semiconductors and the N-type semiconductors are distributed in a staggered mode one by one and are uniformly arranged at intervals to form an S-type loop, the copper plates are horizontally arranged at the tops of the P-type semiconductors and the N-type semiconductors to form semiconductor groups, the N+ type semiconductors are horizontally arranged between two adjacent semiconductor groups, the upper ceramic cover plates are horizontally arranged at the tops of the copper plates, and the lower ceramic cover plates are horizontally arranged at the bottoms of the N+ type semiconductors. Further, in the S-type loop, one N-type semiconductor is disposed between two adjacent P-type semiconductors, and one P-type semiconductor is disposed between two adjacent N-type semiconductors. Further, in the S-type loop, one end facing the current input direction of the power supply end is set as the N-type semiconductor. Further, the semiconductor group has a plurality of, is arranged in the S-shaped loop in a rectangular array structure, and comprises the copper plate, and the P-type semiconductors and the N-type semiconductors which are fixed on the bottom surface of the copper plate at intervals, wherein the N+ type semiconductors are horizontally connected between the P-type semiconductors/N-type semiconductors and the bottoms of the N-type semiconductors/P-type semiconductors of two adjacent semiconductor groups. Further, the n+ type semiconductor includes a straight-plate type common member and an L-shaped electrode member, where the common member is used for horizontally and horizontally communicating two adjacent semiconductor groups in a lateral direction or a longitudinal direction, and the electrode member is provided with at least two electrode members for respectively communicating the P-type semiconductor or the N-type semiconductor in each semiconductor group located at the head end and the tail end of the S-type loop to a power supply end. Further, one end of the lower ceramic cover plate outwards extends beyond the upper ceramic cover plate, and the two electrode pieces are respectively attached to the end of the lower ceramic cover plate in a mirror image mode and are respectively communicated with the positive electrode and the negative electrode of the power supply end. Further, the n+ type semiconductor is the N type semiconductor containing high concentration of phosphorus, and electrons in the n+ type semiconductor are in a higher energy level state and are more likely to lose electrons. Further, the energy level relationship among the copper plate, the P-type semiconductor, the N-type semiconductor and the N+ type semiconductor is that the P-type semiconductor is less than the copper plate, the N-type semiconductor is less than the N+ type semiconductor. A method of using a high-efficiency heat-dissipating optical module TEC device, comprising the h