CN-115662864-B - Protection switch of ion gun

Abstract

A protection switch of an ion gun relates to the field of etching equipment. The guide plate and the bottom plate are arranged outside the emission port, a plurality of diversion channels are arranged in the middle of the guide plate, a reaction switch corresponding to the diversion channels is arranged, and the guide plate and the bottom plate are wrapped outside the emission port and are used for realizing concentrated emission of ion waves on the emission port. The invention further increases the reaction switch, because the reaction switch is correspondingly arranged on the emission channels, namely, the bombardment time factors of the ion light source of each emission channel or each group of emission channels can be further edited and controlled, the etching reaction carried out in the same etching chamber can be compatible with different reaction time periods at the same time, and the production efficiency of the equipment is improved.

Inventors

• OUYANG HUA
• OUYANG CHENG
• CAO FENG
• CHEN YANG

Assignees

• 广州晶优电子科技有限公司

Dates

Publication Date

20260505

Application Date

20221110

Claims (5)

1. 1. A protection switch of an ion gun, which is arranged on an emitting port of the ion gun and is characterized in that, The device comprises a base plate, a guide plate, a substrate and a reaction switch, wherein the base plate is provided with an emission opening, the inner side of the emission opening surrounds the outer side of the emission opening, the length and the width of the guide plate are both larger than those of the emission opening, a plurality of diversion channels are arranged in the middle of the guide plate, the base plate and the guide plate are made of graphite, a plurality of rows of emission through holes are arranged along the width direction of the substrate, the reaction switch is arranged above the emission through holes, the guide plate and the base plate are wrapped on the outer side of the emission opening and are used for realizing concentrated emission of ion waves on the emission opening, and the diameter of the emission through holes is smaller than that of the diversion channels; each row of transmitting through holes is provided with a reaction switch; the control system is also arranged and connected with the reaction switches, so that each reaction switch independently controls the opening or closing of one row of emission through holes.
2. 2. The ion gun protection switch of claim 1, wherein a guard ring is provided along the inside of the emitter opening, the guard ring having a gap with the inside of the emitter opening.
3. 3. The switch of claim 2, wherein the guard ring includes an opening, and the deflector is disposed above the opening.
4. 4. A protection switch for an ion gun according to claim 3, wherein the reaction switch is a moving shutter or a flip shutter.
5. 5. The switch of claim 1, wherein the reaction switch comprises a roll-over door and a rotating shaft, the rotating shaft being disposed between two adjacent rows or columns of the diverting channels, the roll-over door being rotatably coupled to the rotating shaft.

Description

Protection switch of ion gun Technical Field The invention relates to the field of etching equipment, in particular to a protection switch of an ion gun. Background The conductor manufacturing process is a planar manufacturing process that combines photolithography, etching, deposition, and ion implantation processes, requiring a large number of complex devices of various types to be formed on the same substrate and interconnected to have complete electronic functions. Any process deviation may cause the performance parameter of the circuit to deviate from the design value. At present, with the continuous scaling of device feature sizes of ultra-large scale integrated circuits, the integration level is continuously improved, and higher requirements are put on the control of each step of process and the accuracy of the process results. The plasma etching process is widely applied to the semiconductor manufacturing process because of the good directivity. The plasma etching process includes introducing reaction gas, which is one or several kinds of fluorine-containing gas, into the etching cavity, and through the RF source to dissociate the reaction gas into plasma, which is ionized gaseous matter comprising atoms, positive and negative particles, etc., the plasma is gathered together to form plasma sheath, and through the application of electric field or bias voltage, the potential difference between the plasma and the semiconductor substrate is regulated, and the difference between the plasma potential and the semiconductor substrate surface determines the potential drop of the sheath, the plasma is accelerated towards the semiconductor substrate under the action of the electric field to bombard the material to be etched, and the plasma is adsorbed onto the material to be etched to form reaction side product. In the existing etching equipment, the structure comprises an ion gun emission port structure, the structure is often etched through a reaction chamber above the emission port after the ion wave below the emission port enters the emission port if the ion wave is subjected to interference and diversion, and the ion wave passing through the emission port is often subjected to diffusion phenomenon, so that equipment outside the emission port is easily corroded by the diffused ion wave energy, unnecessary loss of the equipment is caused, the structure of the emission port is often tiny, the selected corrosion-resistant material is high in cost, and therefore, further upgrading and reconstruction are needed around the emission port. Disclosure of Invention The present invention is directed to overcoming at least one of the above-mentioned shortcomings of the prior art and providing a protection switch for an ion gun to solve the problem of the loss of the surrounding of the emission port which is susceptible to diffuse ion wave corrosion. The technical scheme includes that the protection switch of the ion gun is arranged on a transmitting port of the ion gun, a guide plate and a bottom plate are arranged along the outer side of the transmitting port, a plurality of diversion channels are arranged in the middle of the guide plate, reaction switches corresponding to the diversion channels are arranged, the guide plate and the bottom plate are wrapped on the outer side of the transmitting port and used for realizing concentrated transmitting of ion waves on the transmitting port, and the diameter of a transmitting through hole is smaller than that of the diversion channels. According to the invention, the bottom plate and the guide plate are arranged outside the emission port, so that the ion waves diffused at the periphery of the emission port can be absorbed or rebounded by the improved bottom plate, other structures outside the emission port are not influenced, and the service life of the equipment is prolonged; according to the invention, on the basis of the original emission port and etching chamber, a switch structure of the ion light source on the etching chamber is increased, namely, a bottom plate is arranged above the emission port, the whole emission port is a square opening in the prior device, a plurality of shunt channels are arranged on the square opening to form a bottom plate structure, the ion light source is further subjected to first-step shunt and concentration, a supporting mechanism corresponding to a chip is generally arranged in the etching chamber, at the moment, the shunt channels and the chip supporting position of the supporting mechanism can be subjected to para-position arrangement, and the opening and closing of the shunt channels are limited by the bottom plate. Preferably, a protection ring is arranged along the inner side of the transmitting port, and a gap is reserved between the protection ring and the inner side of the transmitting port. Preferably, the protecting ring comprises an opening, the guide plate is arranged above the opening, and/or a substrate is arranged above